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<p>InP nanowires with short InAs segments were grown on InP (111)B substrates by Au assisted vapour-liquid-solid growth in a gas source molecular beam epitaxy system. Nanowire crystal structure and morphology were investigated by transmission electron microscopy as a function of temperature, growth rate, and V/III flux ratio. At 370C predominantly kinked nanowires with random morphology and low areal density were observed with a rough parasitic 2D film. At 440C, nanowire density was also reduced but the 2D film growth was smoother and nanowires grew straight without kinking. An optimum temperature of 400C maximized areal density with uniform nanowire morphology. At the optimum temperature of 400C, an increase in V/III flux ratio changed the nanowire morphology from rod-shaped to pencil like indicating increased radial growth. Growth rate did not affect the crystal structure of InP nanowires. For InAs nanowires, changing the growth rate from 1 to 0.5 μm/hr reduced the presence of stacking faults to as low as one per nanowire. Short InAs segments in InP nanowires were found to grow through two mechanisms for nanowires of length L and diameter D. The first mechanism described the supply of In to the growth front via purging of In from the Au droplet where L was proportional to D. The second mechanism involved direct deposition of adatoms on the nanowire sidewall and subsequent diffusion to the growth front where L was proportional to 1/D. For intermediate growth durations, a transition between these two mechanisms was observed. For InP and InAs nanowires, the growth mode was varied from axial to radial through the inclusion of Al to form a core shell structure. Al_xIn_1-xAs(P) shells were grown on InAs cores with Al alloy fractions between 0.53 and 0.2. These nanowires were examined by transmission electron microscopy and it was found, for all values of x in InAs-Al_xIn_1-xP structures, that relaxation had occurred through the introduction of dislocations. For InAs-Al_xIn_1-xAs structures, all values except x=0.2 had relaxed through dislocation formation. A critical thickness model was developed to determine the core-shell coherency limits which confirmed the experimental observation of strain relaxation. The effects of passivation on the electronic transport and the optical properties were examined as a function of structural core-shell passivation and chemical passivation. The mechanisms for the observed improvement in mobility for core-shell versus bare InAs nanowires was due to the reduction in ionized impurity scattering from surface states. Similarly an increase in photoluminescence intensity after ammonium sulfide passivation was explained by the reduction of donor type surface states.</p> / Doctor of Philosophy (PhD)

Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Reactive molecular-beam epitaxy (MBE) and pulsed-laser deposition (PLD) are the two most successful growth techniques for epitaxial heterostructures of complex oxides. PLD possesses experimental simplicity, low cost, and versatility in the materials to be deposited. Reactive MBE employing alternately-shuttered elemental sources (atomic layer-by-layer MBE, or ALL-MBE) can control the cation stoichiometry precisely, thus producing oxide thin films of exceptional quality. There are, however, major drawbacks to the two techniques. Reactive MBE is limited to source elements whose vapor pressure is sufficiently high; this eliminates a large fraction of 4- and 5-d metals. In addition, the need for ozone to maintain low-pressure MBE conditions increases system complexity in comparison to conventional PLD. On the other hand, conventional PLD using a compound target often results in cation off-stoichiometry in the films. This thesis presents an approach that combines the strengths of reactive MBE and PLD: atomic layer-by-layer laser MBE (ALL-Laser MBE) using separate oxide targets. Ablating alternately the targets of constituent oxides, for example SrO and TiO2, a SrTiO3 film can be grown one atomic layer at a time. Stoichiometry for both the cations and oxygen in the oxide films can be controlled. Using Sr1+xTi1-xO3, CaMnO3, BaTiO3 and Ruddlesden–Popper phase Lan+1NinO3n+1 (n = 4) as examples, the technique is demonstrated to be effective in producing oxide films with stoichiometric and crystalline perfection. By growing LaAl1+yO3 films of different stoichiometry on TiO2-terminated SrTiO3 substrate at high oxygen pressure, it is shown that the behavior of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface can be quantitatively explained by the polar catastrophe mechanism. / Physics

The continued scaling of feature size in silicon (Si)-based complimentary metal-oxide-semiconductor (CMOS) technology has led to a rapid increase in compute power. Resulting from increases in device densities and advances in materials and transistor design, integrated circuit (IC) performance has continued to improve while operational power (VDD) has been substantially reduced. However, as feature sizes approach the atomic length scale, fundamental limitations in switching characteristics (such as subthreshold slope, SS, and OFF-state power dissipation) pose key technical challenges moving forward. Novel material innovations and device architectures, such as group IV and III-V materials and tunnel field-effect transistors (TFETs), have been proposed as solutions for the beyond Si era. TFETs benefit from steep switching characteristics due to the band-to-band tunneling injection of carriers from source to channel. Moreover, the narrow bandgaps of III-V and germanium (Ge) make them attractive material choices for TFETs in order to improve ON-state current and reduce SS. Further, Ge grown on InₓGa₁₋ₓAs experiences epitaxy-induced strain (ε), further reducing the Ge bandgap and improving carrier mobility. Due to these reasons, the ε-Ge/InₓGa₁₋ₓAs system is a promising candidate for future TFET architectures. In addition, the ability to tune the bandgap of Ge via strain engineering makes ε-Ge/InₓGa₁₋ₓAs heterostructures attractive for nanoscale group IV-based photonics, thereby benefitting the monolithic integration of electronics and photonics on Si. This research systematically investigates the material, optical, and heterointerface properties of ε-Ge/InₓGa₁₋ₓAs heterostructures on GaAs and Si substrates. The effect of strain on the heterointerface band alignment is comprehensively studied, demonstrating the ability to modulate the effective tunneling barrier height (Ebeff) and thus the threshold voltage (VT), ON-state current, and SS in future ε-Ge/InₓGa₁₋ₓAs TFETs. Further, band structure engineering via strain modulation is shown to be an effective technique for tuning the emission properties of Ge. Moreover, the ability to heterogeneously integrate these structures on Si is demonstrated for the first time, indicating their viability for the development of next-generation high performance, low-power logic and photonic integrated circuits on Si. / Master of Science

The direct growth of graphene by scalable methods on magnetic insulators is important for industrial development of graphene-based spintronic devices, and a route towards substrate-induced spin polarization in graphene without spin injection. X-ray photoelectron spectroscopy (XPS), low energy electron diffraction LEED, electron energy loss spectroscopy (EELS) and Auger electron spectroscopy (AES) demonstrate the growth of Co3O4(111) and CoO(111) to thicknesses greater than 100 Å on Ru(0001) surfaces, by molecular beam epitaxy (MBE). The results obtained show that the formation of the different cobalt oxide phases is O2 partial pressure dependent under same temperature and vacuum conditions and that the films are stoichiometric. Electrical I-V measurement of the Co3O4(111) show characteristic hysteresis indicative of resistive switching and thus suitable for advanced device applications. In addition, the growth of Co0.5Fe0.5O(111) was also achieved by MBE and these films were observed to be OH-stabilized. C MBE yielded azimuthally oriented few layer graphene on the OH-terminated CoO(111), Co0.5Fe0.5O(111) and Co3O4(111). AES confirms the growth of (111)-ordered sp2 C layers. EELS data demonstrate significant graphene-to-oxide charge transfer with Raman spectroscopy showing the formation of a graphene-oxide buffer layer, in excellent agreement with previous theoretical predictions. XPS data show the formation of C-O covalent bonding between the oxide layer and the first monolayer (ML) of C. LEED data reveal that the graphene overlayers on all substrates exhibit C3V. The reduction of graphene symmetry to C3V – correlated with C-O bond formation – enables spin-orbit coupling in graphene. Consequences may include a significant band gap and room temperature spin Hall effect – important for spintronic device applications. The results suggest a general pattern of graphene/graphene oxide growth and symmetry lowering for graphene formation on the (111) surfaces of rocksalt-structured oxides.