The usage of more inexpensive silicon feedstock for the crystallization of multicrystalline silicon blocks promises cost reduction for the photovoltaic industry. Less expensive substrates made out of metallurgical silicon (MG-Si) are used as a mechanical support for the epitaxial solar cell. Moreover, conventional inert solar cells can be produced from up-graded metallurgical silicon (UMG-Si). This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Solar cell processing steps can also exert a change in the values of mechanical strength of processed multicrystalline silicon wafers until the fabrication of a solar cell. Bending tests, fracture toughness and dynamic elastic modulus measurements are performed in this work in order to research the mechanical behavior of multicrystalline silicon crystallized with different qualities of silicon feedstock. Bending tests and residual stress measurements allows the quantification of the mechanical strength of the wafers after every solar cell processing step. The experimental results are compared with theoretical models found in the classical literature about the mechanical properties of ceramics. The influence of second phase particles and thermal processes on the mechanical strength of silicon wafers can be predicted and analyzed with the theoretical models. Metals like Al and Cu can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, amorphous silicon oxide particles (SiOx) lower the mechanical strength of multicrystalline silicon due to thermal residual stresses and elastic mismatch with silicon. Silicon nitride particles (Si3N4) reduce fracture toughness and cause failure by radial cracking in its surroundings due to its thermal mismatch with silicon. Finally, silicon carbide (SiC) and crystalline silicon oxide (SiOx) introduce thermal residual stresses but can have a toughening effect on the silicon matrix and hence, increase the mechanical strength of silicon wafers if the particles are smaller than a certain size. The surface of as-cut wafers after multi-wire sawing presents sharp micro-cracks that control their mechanical behavior. Subsequent removal of these micro-cracks by texture or damage etching approximately doubles the mechanical strength of silicon wafers. The mechanical behavior of the wafers is then governed by defects like cracks and particles formed during the crystallization of multicrystalline silicon blocks. Further thermal processing steps have a minor impact on the mechanical strength of the wafers compared to as-cut wafers. Finally, the mechanical strength of final solar cells is comparable to the mechanical strength of as-cut wafers due to the high residual thermal stress introduced after the formation of the metallic contacts which makes silicon prone to crack.

Die Rekombinationsaktivität von Versetzungen und Korngrenzen in multikristallinem Silicium wird von Kupfer und anderen metallischen Verunreinigungen wie Eisen mitbestimmt. Das Hauptziel der Arbeit war es, die Verteilung von Kupfer und dessen Wirkung auf die Rekombinationsaktivität von Versetzungen und Korngrenzen genauer zu untersuchen. Dazu wurden optische und elektrische Untersuchungen an gezielt mit Metallen verunreinigten Modellmaterialien durchgeführt. Nicht alle Versetzungen sind rekombinationsaktiv. Es konnte gezeigt werden, dass der Anteil rekombinationsaktiver Versetzungen am Gesamtinventar und die Hintergrunddiffusionslänge von der Verunreinigung mit Metallen abhängig sind. Ergebnisse von Untersuchungen an Proben, die Diffusionsexperimenten unterzogen wurden, deuten auf unterschiedliches Ausscheidungsverhalten von Kupfer und Eisen hin sowie auf Wechselwirkungen mit Versetzungen und Korngrenzen, die mit der Diffusionstemperatur und den Abkühlbedingungen in Zusammenhang stehen.

The usage of more inexpensive silicon feedstock for the crystallization of multicrystalline silicon blocks promises cost reduction for the photovoltaic industry. Less expensive substrates made out of metallurgical silicon (MG-Si) are used as a mechanical support for the epitaxial solar cell. Moreover, conventional inert solar cells can be produced from up-graded metallurgical silicon (UMG-Si). This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Solar cell processing steps can also exert a change in the values of mechanical strength of processed multicrystalline silicon wafers until the fabrication of a solar cell. Bending tests, fracture toughness and dynamic elastic modulus measurements are performed in this work in order to research the mechanical behavior of multicrystalline silicon crystallized with different qualities of silicon feedstock. Bending tests and residual stress measurements allows the quantification of the mechanical strength of the wafers after every solar cell processing step. The experimental results are compared with theoretical models found in the classical literature about the mechanical properties of ceramics. The influence of second phase particles and thermal processes on the mechanical strength of silicon wafers can be predicted and analyzed with the theoretical models. Metals like Al and Cu can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, amorphous silicon oxide particles (SiOx) lower the mechanical strength of multicrystalline silicon due to thermal residual stresses and elastic mismatch with silicon. Silicon nitride particles (Si3N4) reduce fracture toughness and cause failure by radial cracking in its surroundings due to its thermal mismatch with silicon. Finally, silicon carbide (SiC) and crystalline silicon oxide (SiOx) introduce thermal residual stresses but can have a toughening effect on the silicon matrix and hence, increase the mechanical strength of silicon wafers if the particles are smaller than a certain size. The surface of as-cut wafers after multi-wire sawing presents sharp micro-cracks that control their mechanical behavior. Subsequent removal of these micro-cracks by texture or damage etching approximately doubles the mechanical strength of silicon wafers. The mechanical behavior of the wafers is then governed by defects like cracks and particles formed during the crystallization of multicrystalline silicon blocks. Further thermal processing steps have a minor impact on the mechanical strength of the wafers compared to as-cut wafers. Finally, the mechanical strength of final solar cells is comparable to the mechanical strength of as-cut wafers due to the high residual thermal stress introduced after the formation of the metallic contacts which makes silicon prone to crack.

Die Rekombinationsaktivität von Versetzungen und Korngrenzen in multikristallinem Silicium wird von Kupfer und anderen metallischen Verunreinigungen wie Eisen mitbestimmt. Das Hauptziel der Arbeit war es, die Verteilung von Kupfer und dessen Wirkung auf die Rekombinationsaktivität von Versetzungen und Korngrenzen genauer zu untersuchen. Dazu wurden optische und elektrische Untersuchungen an gezielt mit Metallen verunreinigten Modellmaterialien durchgeführt. Nicht alle Versetzungen sind rekombinationsaktiv. Es konnte gezeigt werden, dass der Anteil rekombinationsaktiver Versetzungen am Gesamtinventar und die Hintergrunddiffusionslänge von der Verunreinigung mit Metallen abhängig sind. Ergebnisse von Untersuchungen an Proben, die Diffusionsexperimenten unterzogen wurden, deuten auf unterschiedliches Ausscheidungsverhalten von Kupfer und Eisen hin sowie auf Wechselwirkungen mit Versetzungen und Korngrenzen, die mit der Diffusionstemperatur und den Abkühlbedingungen in Zusammenhang stehen.