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<p>InP nanowires with short InAs segments were grown on InP (111)B substrates by Au assisted vapour-liquid-solid growth in a gas source molecular beam epitaxy system. Nanowire crystal structure and morphology were investigated by transmission electron microscopy as a function of temperature, growth rate, and V/III flux ratio. At 370C predominantly kinked nanowires with random morphology and low areal density were observed with a rough parasitic 2D film. At 440C, nanowire density was also reduced but the 2D film growth was smoother and nanowires grew straight without kinking. An optimum temperature of 400C maximized areal density with uniform nanowire morphology. At the optimum temperature of 400C, an increase in V/III flux ratio changed the nanowire morphology from rod-shaped to pencil like indicating increased radial growth. Growth rate did not affect the crystal structure of InP nanowires. For InAs nanowires, changing the growth rate from 1 to 0.5 μm/hr reduced the presence of stacking faults to as low as one per nanowire. Short InAs segments in InP nanowires were found to grow through two mechanisms for nanowires of length L and diameter D. The first mechanism described the supply of In to the growth front via purging of In from the Au droplet where L was proportional to D. The second mechanism involved direct deposition of adatoms on the nanowire sidewall and subsequent diffusion to the growth front where L was proportional to 1/D. For intermediate growth durations, a transition between these two mechanisms was observed. For InP and InAs nanowires, the growth mode was varied from axial to radial through the inclusion of Al to form a core shell structure. Al_xIn_1-xAs(P) shells were grown on InAs cores with Al alloy fractions between 0.53 and 0.2. These nanowires were examined by transmission electron microscopy and it was found, for all values of x in InAs-Al_xIn_1-xP structures, that relaxation had occurred through the introduction of dislocations. For InAs-Al_xIn_1-xAs structures, all values except x=0.2 had relaxed through dislocation formation. A critical thickness model was developed to determine the core-shell coherency limits which confirmed the experimental observation of strain relaxation. The effects of passivation on the electronic transport and the optical properties were examined as a function of structural core-shell passivation and chemical passivation. The mechanisms for the observed improvement in mobility for core-shell versus bare InAs nanowires was due to the reduction in ionized impurity scattering from surface states. Similarly an increase in photoluminescence intensity after ammonium sulfide passivation was explained by the reduction of donor type surface states.</p> / Doctor of Philosophy (PhD)

<p>An ammonium polysulfide (NH₄)₂S_x solution was optimized through a series of experiments to be used for surface passivation of III-V nanowires . The effectiveness of sulfur passivation was investigated by measuring the photoluminescence from p-InP nanowires before and after passivation. The optimized parameters included solvent type, molarity and passivation time. According to the experiments, passivation of nanowires in 0.5 M solution diluted in isopropyl alcohol for 5 min produced the maximum photoluminescence improvement. It was also demonstrated that the whole surface passivation of vertical nanowires in ensemble samples caused a 40 times increase in the photoluminescence intensity while top surface passivation of individual nanowires resulted in a 20 times increase of photoluminescence intensity. A model was developed to calculate the photoluminescence from single nanowires under different surface recombination and surface potential. The model showed that the 40 times increase in the photoluminescence is mainly due to the reduction of surface state density from 10¹² cm^-2before passivation to 5×10¹⁰ cm^-2after passivation.</p> <p>The effect of sulfur passivation on core-shell p-n junction GaAs nanowire solar cells has been investigated. The relative cell efficiency increased by 19% after passivation.</p> / Doctor of Philosophy (PhD)

Magnesium diboride MgB2 is an interesting material that was discovered to be a superconductor in 2001. It has a remarkably high critical temperature of 39 K which is much greater than was previously thought possible for a phonon-mediated superconductor. MgB2 was also the first material found to exhibit multiple gap superconductivity. It has two energy gaps, the pi gap with a value of 2.3 meV, and the sigma gap with a value of 7.1 meV. Both the high critical temperature and the multiple large energy gaps make MgB2 an attractive candidate for superconducting devices. While the initial discovery of MgB2 was accompanied by much excitement, the enthusiasm has mostly disappeared due to the lack of progress made in implementing MgB2 in practical devices. The aim of this thesis is to attempt to reinvigorate interest in this remarkable material through a study of a variety of practical superconducting devices made with MgB2 thin films grown by hybrid physical-chemical vapor deposition (HPCVD). Two different methods of fabricating MgB2 Josephson junctions are explored. The first is a sandwich type trilayer configuration with a barrier made by magnetron sputtered MgO. Junctions of this sort have been previously studied and implemented in a variety of devices. While they do show some attractive properties, the on-chip spread in critical current due to barrier non-uniformity was too high to be considered a viable option for use in many-junction devices. By developing a fabrication scheme which utilizes electron beam lithography, modest improvements were made in the on-chip parameter spread, and miniaturization of junction size yielded some insight into the non-uniform barriers. The second approach of creating MgB2 Josephson junctions utilized a planar geometry with a normal metal barrier created by irradiating nano-sized strips of the material with a focused helium ion beam. The properties of these junctions are investigated for different irradiation doses. This new technique is capable of producing high quality junctions and furthermore the parameter spread is greatly reduced as compared to the sandwich type junctions. While more research is necessary in order to increase the IcRn products, these junctions show promise for use in many-junction devices such as RSFQ circuits. Prior to this work, the largest substrates that could be coated with HPCVD grown MgB2 were 2" in diameter. A new chamber was designed and constructed which demonstrated the ability to coat substrates as large as 4". This scaled-up system was used to grow MgB2 films on 1 x 10 cm flexible substrates. A method of fabrication was developed which could pattern these 10 cm long samples into ribbon cables consisting of many high frequency transmission lines. This technology can be utilized to increase the cooling efficiency of cryogenic systems used for RSFQ systems which require many connections between low temperature and room temperature electronics. Finally, a method of producing MgB2 films with thicknesses as low as 8 nm was developed. This is achieved by first growing thicker films and using a low angle ion milling step to gradually reduce the film thickness while still maintaining well connected high quality films. A procedure was developed for fabricating meandering nanowires in these films with widths as low as 100 nm for use as superconducting nanowire single photon detectors (SNSPDs). A study of the transport properties of these devices is first presented. Measurements show low values of kinetic inductance which is ideal for high count rates in SNSPDs. The kinetic inductance measurements also yielded the first measurements of the penetration depth of MgB2 films in the ultra-thin regime. Devices made from these ultra-thin films were found to be photon sensitive by measurements made by our collaborators. / Physics