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Ce travail de thèse porte sur l'étude du comportement de l'interface sol-structure sous sollicitations cycliques. Pour cela, un important programme expérimental à la sonde-pieu, mise en place dans des massifs de sable siliceux en chambre d'étalonnage, a été réalisé. On s'est intéressé, particulièrement, à l'évolution du frottement latéral et de la résistance enpointe à grand nombre de cycles (100 000 cycles), en faisant varier l'état initial du massif (état de densité et contrainte de consolidation) et les paramètres de chargement (amplitude du déplacement cyclique). Lors des essais à déplacement contrôlé, un renforcement important du frottement latéral à grand nombre de cycles a été observé pour les faibles valeurs de résistance en pointe initiale. Ce renforcement n'a quasiment pas été observé avant par les auteurs, car l'accent a été mis sur la phase de dégradation (autour de 1000cycles). Il est attribué à une forte dilatance partiellement empêchée. En revanche, pour les fortes valeurs de résistance en pointe, le renforcement à grand nombre de cycles diminue considérablement. Cette diminution est liée à l'effet des particules fines créées lors du fonçage. Celles-ci jouent le rôle de cimentation/scellement de la surface latérale de la sonde pieu en diminuant sa rugosité. Par ailleurs, des essais à force contrôlée ont été réalisés afin d'étudier la stabilité des pieux. Enfin, des lois empiriques d'évolution du frottement latéral et de la résistance en pointe ont été proposées afin de reproduire les évolutions observées expérimentalement. Ces lois d'évolution ont été intégrées dans un modèle de calcul de pieu sous chargement cyclique de type t-z. Les premières simulations effectuées montrent un bon accord entre le modèle et les résultats expérimentaux à petit nombre de cycles / We study in this present work the behavior of the soil-structure interface under large number of cycles (100 000 cycles). An important program with a probe-pile jacked into the beds of sand was carried out in calibration chamber. We interested particularly on the evolution of local skin friction and tip resistance at different initial state of beds (initial density and confining pressure) and the parameters of the load (cyclic displacement amplitude). We conducted an important part of the experimental work under axial cyclic displacement controlled test which allows studying the large number of cycles. After the degradation phase, already observed by several authors (about 1000 cycles), an important re-increase in the skin friction at large cyclic number was observed at low values of initial tip resistance.This re-increase is attributed to a high dilation of sand around the probe. However, for high values of initial tip resistance there is almost not re-increase in the skin friction. This is due tothe formation of a shear band around the probe made of crushed sand. These reduce theroughness of the probe by cementing/sealing. In addition to the displacement-controlled tests, we conducted the load-controlled tests in order to study the stability of the pile. The results showed a good agreement with the displacement-controlled tests. Finally, empirical model of evolution of skin friction and tip resistance have been proposed in order to reproduce the experimental results. This model was incorporated into a computational model of pile under cyclic axial loading. The first simulations showed a good agreement with the experimental results at low number of cycles

<p>Stress relaxation in tin films can result in microstructural changes visible on the surface, referred to as “surface defects,” and can include whisker and hillock formation, cracking, nucleation of new grains, and grain growth. Sn whiskers are of particular concern for microelectronics reliability in which Sn whiskers growing from component surface and cause catastrophic short-circuiting. While prior research has identified the conditions and mechanisms for surface defect evolution during aging and thermal cycling, the response of tin films due to mechanical stress, especially high frequency vibration, is not fully understood. In practical terms, high frequency vibration is an important source of mechanical stress generation in microelectronics for automotive and aerospace applications. This research, based on high frequency vibration of cantilevers, adds to the existing mechanisms for stress relaxation process in metal thin films, not just for tin films, as well as proposed new mechanisms for such processes.</p> <p>In the first study, the piezoelectric drive of small atomic force microscopy (AFM) cantilevers vibrated at resonance are used for high frequency cyclic bending experiments. Intermetallic (IMC) formation as well as initial film morphology and thickness (corresponding to surface grain size) all influence the response of tin films for cyclic bending. A laser doppler vibrometer (LDV) system was used to identify the real-time strain along the cantilever during cycling, suggesting that the small strains are responsible for the limited nucleation and growth for defects though the defect density increases with the number of cycles and strain distribution along the cantilever.</p> <p>In the second study, the effect of larger strains on defect evolution was determined using vibration of larger cantilevers at resonance as a function of number of cycles, frequency, temperature, and whether the vibration was continuous or interrupted for SEM characterization of defect type and density. In addition to typical micro-sized whiskers and hillocks, intragranular breakup (IGB) with intrusions and extrusions and nanowhiskers (NWs) with diameters < 1 𝜇m were observed. Both increasing number of cycles and strain amplitude/rate promote defect formation for a fixed frequency, with the defect density being strongly frequency dependent.Vibration at low temperature and interrupting measurements for SEM characterization affected the relative densities. The density of larger surface defects is strongly influenced by interruptions while NW density is almost unaffected. </p><p>Both low resonant frequency and low T (223 K) promote IGB formation during cyclic bending due to large maximum strain amplitude and slower diffusion/creep at low T, respectively. Though the overall defect density for low T is smaller than that at room temperature (RT), the response of films is similar to that at RT, indicating the same mechanisms. The defect density decrease at low T is mainly determined by NW formation, and there is a transition from micro-sized surface defects to IGBs for cyclic bending at low T.</p><p>This research demonstrated that cyclic bending of cantilevers can be used to quantify the stress relaxation of tin films in an important stress regime for microelectronics and to develop defect mitigation strategies to improve the reliability of interconnects in electronic applications.</p>

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