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<p><p>This thesis concerns design and construction of an ultra high vacuum chamber to fabricate and characterize spintronic devices.  The long term intention is to fabricate spin valve structures with V[TCNE]₂ (hybrid organic inorganic semiconductor room temperature magnet) sandwiched between two ferromagnetic electrodes, which requires better than 10^-8mbar of vacuum. Due to an uncured leak in the chamber, the current vacuum is limited to 4*10^-7mbar. The V[TCNE]₂ thin film prepared in this vacuum, oxidized completely  by  the presence of oxygen during the film growth. Organic magnetoresistance (OMAR) devices which are simple organic diode structures were fabricated and characterized, as they are compatible with high vacuum conditions. A magnetoresistance measurement set up was arranged and the possible problems in fabrication and characterization are analyzed.</p><p> </p><p>To fabricate OMAR devices-ITO/P3HT/Al, RR-P3HT (regio regular poly (3-hexylthiophene)) an effective hole transport polymer with higher hole mobilities was used as an active layer and Al (aluminum) as a cathode. A thermal evaporation setup was added to the vacuum chamber to evaporate Al electrodes. The devices were kept in argon and vacuum environments, while characterizing in dark to suppress the exitons generated by photo illumination. The Organic magnetoconductance of about 1% is observed for the less concentration P3HT (3mg/1ml), and significantly improved to -23% for the high concentration P3HT (10mg/ml) solution. The results support that the negative magnetoconductance is due to the formation of bipolaron under the influence of an external magnetic field.</p><p> </p><p>Finally, suggestions to improve the performance of the vacuum chamber to fabricate and characterize the spintronic devices and OMAR devices are presented.</p></p>

This thesis concerns design and construction of an ultra high vacuum chamber to fabricate and characterize spintronic devices.  The long term intention is to fabricate spin valve structures with V[TCNE]2 (hybrid organic inorganic semiconductor room temperature magnet) sandwiched between two ferromagnetic electrodes, which requires better than 10-8mbar of vacuum. Due to an uncured leak in the chamber, the current vacuum is limited to 4*10-7mbar. The V[TCNE]2 thin film prepared in this vacuum, oxidized completely  by  the presence of oxygen during the film growth. Organic magnetoresistance (OMAR) devices which are simple organic diode structures were fabricated and characterized, as they are compatible with high vacuum conditions. A magnetoresistance measurement set up was arranged and the possible problems in fabrication and characterization are analyzed.   To fabricate OMAR devices-ITO/P3HT/Al, RR-P3HT (regio regular poly (3-hexylthiophene)) an effective hole transport polymer with higher hole mobilities was used as an active layer and Al (aluminum) as a cathode. A thermal evaporation setup was added to the vacuum chamber to evaporate Al electrodes. The devices were kept in argon and vacuum environments, while characterizing in dark to suppress the exitons generated by photo illumination. The Organic magnetoconductance of about 1% is observed for the less concentration P3HT (3mg/1ml), and significantly improved to -23% for the high concentration P3HT (10mg/ml) solution. The results support that the negative magnetoconductance is due to the formation of bipolaron under the influence of an external magnetic field.   Finally, suggestions to improve the performance of the vacuum chamber to fabricate and characterize the spintronic devices and OMAR devices are presented.

La mise en évidence d’effets de polarisation d’échange (“exchange bias”, EB) ouvre de nouvelles perspectives dans le domaine émergeant de la spintronique organique. Dans une première partie de la thèse, on étudie l’EB des systèmes Co/MPc et Py/MPc (M=Mn, Co, Fe, Zn) par magnétométrie. Pour tous ces systèmes, l’EB est observé avec des températures de blocage de 100K environ. Ces études sont complétées par des mesures de résonance ferromagnétique confirmant les valeurs du champ de polarisation. Dans une troisième partie, on étudie les propriétés magnétiques des tricouches Co/Pc/Co. Les cycles d’hystérèse présentent des marches indiquant un renversement séquentiel des couches de cobalt. A basse température, on observe de l’anisotropie unidirectionnelle pour les deux couches mais leurs champs de polarisation diffèrent. / Observation of exchange bias (EB) phenomenon by using molecular materials as a pinninglayer open the horizon for tremendous perspective in the field of organic spintronics. Thefirst part of the thesis is devoted to the study of EB of Co/MPc and Py/MPc (M=Mn, Co, Fe,Zn) by static magnetometry. The existence of EB is evidenced in all Pc molecules with block-ing temperature around 100K. The second part is devoted to the study of EB by dynamicFMR measurements. The values of EB measured by this method are compatible with staticmagnetometry measurements. The third part is devoted to study magnetic properties of thetrilayer Co/Pc/Co systems. Hysteresis loops exhibit a stepped shape indicative of successivereversal of each layer. Low temperature loops show that both Co layers experience unidi-rectional anisotropy after field cooling, with differing bias fields.

Organic semiconductors (OSCs) have already been shown to have great potential to play an important role in the future of clean energy generation (organic solar cells) and provide energy efficient lighting (organic light-emitting diodes, OLED). Prior research has found that the light-emission efficiency of OLED is severely limited by the magnetic state (technically the spin-configuration) of the light-emission process. In this thesis, we work on the processes using external magnetic fields that can overcome these magnetic limitations. A major focus of this research is to enhance the performance of OLED, while at the same time to unravel the scientific mechanisms by which magnetic fields act on OSCs devices. Thermally activated delayed fluorescence (TADF) is a next-generation OLED emission technology which enables nearly 100% light-emission efficiency without using heavy precious metals. TADF characteristics depend on the probability of reverse intersystem crossing (RISC) from the triplet excited states (T1) to singlet excited states (S1). The conversion (T1 to S1) process depends strongly on spin dynamics, thus we predict a dramatic magnetic field effects (MFEs) in such TADF OLED devices. In subsequent experiments we observed that changes in TADF devices due to various forms of electrical stress can lead to enormous increases in magnetic field effects (MFEs) on the current (> 1400%) and electroluminescence (> 4000%). Our work provides a flexible and inexpensive pathway towards magnetic functionality and field sensitivity in current organic devices. Such OLED pave the way for novel magnetic sensitive OSCs devices with integrated optical, electronic and magnetic characteristics. Organic magnetoresistance (OMAR) has been observed to alter the current and efficiency of OLED without any ferromagnetic components. Here we utilizes slight alterations to the device properties, the addition of a radical-doped functional layer, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere, to address the assumption about the importance of the hyperfine interaction and to attempt to differentiate between the different models for OMAR. A feature where the magnitude of OMAR exhibits a plateau over a wide range of doping fraction was observed at all temperatures investigated. This phenomenon is well explained by a theory in which a single dopant spin strongly interacts, by exchange, with one of the bottleneck sites. A similar can be used to explain the efficiency increases observed in organic solar cells for certain doping fractions.

The interfacial electronic structure of the organic material- tris(8-hydroxyquinolinato)aluminum (Alq3) forming an interface with cobalt metal has been investigated in this research. The primary characterization method used in this research was near-edge X-ray absorption fine structure (NEXAFS) spectroscopy which probes the unoccupied molecular orbitals of a material. Density functional theory (DFT) calculations have also been employed to calculate the partial density of states (PDOS) of all constituent elements present in Alq3 molecule. The DFT calculations helped to determine the molecular orbital structure of Alq3 and to understand how the orbital structure is influenced by forming an interface with ferromagnetic Co layer. The experimental NEXAFS spectra measured in total fluorescence yield (TFY) showed that the lowest unoccupied molecular orbital (LUMO) and LUMO+1 states of Alq3 were not affected by the presence of Co when Co is deposited onto Alq3. On the other hand, a charge transfer between Co and Alq3 led the loss or reduction of LUMO+2 state for a Co(top)/Alq3 bilayer sample when compared to pristine Alq3 reference sample (without Co deposition). This selective effect of Co on the orbital configuration of Alq3 suggests that Co atoms diffuse into Alq3 and interact with preferred sites in Alq3. By comparing the spectral change in the experimental NEXAFS spectra to the calculated PDOS of Alq3, the preferred interaction sites between Co and Alq3 could be successfully determined. This work suggests that the spectroscopic approach using synchrotron-radiation X-ray spectroscopy can serve as a powerful means for studying the interfacial electronic structure between magnetic metals and organic semiconductors and can contribute to the research and development of high performance organic spintronics.

Cette thèse s’intéresse à la fabrication de jonctions magnétiques à effet tunnel organiques. Les MTJ organiques remplacent la barrière par une molécule. Il a fallu d’abord vaincre les problèmes liés à la fabrication de ces MTJ. En effet, ce type de jonction est très fragile du point de vue de sa fabrication, car incompatible avec les solvants. Un nouveau procédé de fabrication a été mis au point. Ce procédé fait appel à de petites « billes » nanométriques dispersées à la surface d’un échantillon. Ce procédé a été utilisé avec succès. Nous avons obtenu une réponse magnétique des échantillons. Des mesures XAS et de magnéto-transport ont été menées sur des jonctions MgO. Une approche in operando innovante a été utilisée. Ces mesures ont démontré que la présence d’oxyde de fer aux interfaces limite la TMR. Pour finir, des mesures SR-PES ont été menées dans le but d’étudier la polarisation d’interface de Cu/MnPc dans le système Cu(100)//Co/Cu/MnPc. Ces mesures ont révélé que cette interface est très fortement polarisée en spin. Les structures qui apparaissent dans les spectres ne peuvent être expliquées par une simple atténuation du signal du cobalt due à la couverture de molécules. / This thesis concerns the fabrication of organic magnetics tunnel junctions. Organic MTJs replace the barrier with a molecule. First, we had to overcome the problems of MTJ manufacturing. Indeed, this type of junction is very fragile from the point of view of its manufacturing because they are incompatible with solvents. A new manufacturing process has been developed. This process uses small nanometric "beads" scattered on the surface of a sample. This method has been used successfully and we obtained a magnetic response of the samples. XAS and magneto-transport measurements were conducted on MgO junctions. An innovative in operando approach was used. These measurements revealed that the presence of oxide at the interfaces limits the TMR. Finally, SR-PES measurements were carried out in order to study the Cu/MnPc interface polarization in the Cu (100)//Co/Cu/MnPc system. These measurements revealed that this interface is strongly spin polarized. Structures appearing in the spectra cannot be explained by a simple attenuation of the cobalt signal due to molecule coverage.

We have studied by STM, SQUID, X-ray reflectivity, X-ray diffraction, optical absorption and XAS Fe(phen)2(NCS)2 and Fe{[3,5-dimethylpyrazolyl]3BH}2 samples deposited by thermal evaporation on Cu(100), Co(100) and SiO2 substrates, and compared with results on powder samples. We have confirmed the existence of the soft X-ray induced excited spin state trapping (SOXIESST), and investigated its properties, in particular dynamic aspects. The effect is sensitive to the intensity and the structure of the applied X-ray beam, and is non-resonant. We suggest that its efficiency is also governed by metal-ligand charge transfer states (MLCT). The study of single molecules has revealed that they could be switched by voltage pulses, and by this way building memristive devices, but only if the influence of the substrate is sufficiently reduced. We have then investigated thin films with the help from a simple thermodynamic model, and evidenced that the cooperativity was reduced and the transition temperature is modified (higher for Fe-phen, and lower for Fe-pyrz). Finally, we use these results to build multilayer vertical devices Au/Fe-phen/Au, and its electrical properties depends, according to our preliminary results, on the external stimuli (temperature, magnetic field). Notably, they present a "diode" effect at the spin transition.

Nous avons étudié par STM, SQUID, Réflectivité X, Diffraction des rayons X, absorption optique et XAS des échantillons de Fe(phen)2(NCS)2 et Fe{[3,5-dimethylpyrazolyl]3BH}2 déposé par évaporation thermique sur des substrats de Cu(100), Co(100) et SiO2, et comparé avec des échantillons en poudre. Nous avons confirmé l'existence de l'effet de piégeage d'état de spin induit par les rayons X (SOXIESST), et étudié ses propriétés, en particulier dynamiques. Celui-ci dépend de l'intensité et de la structure du faisceau X appliqué, et est non-résonant. Nous suggérons que son efficacité est influencée également par les états de transfert de charge métal-ligand (MLCT). L'étude des molécules isolées a montré que l'on pouvait les faire transiter par une impulsion électrique, et construire ainsi des dispositifs memrésistifs, mais seulement si l'influence du substrat est suffisamment réduite. À l'aide d'un modèle thermodynamique simple, nous avons alors étudié les couches minces et montré que la coopérativité est réduite et que la température de transition est modifiée (plus grande pour la Fe-phen, plus faible pour la Fe-pyrz). Enfin, nous utilisons ces résultats pour construire des dispositifs multicouche verticaux Au/Fe-phen/Au dont les propriétés électriques, d'après nos résultats préliminaires, sont dépendantes des stimuli extérieurs (température, champ magnétique). Notamment, ils présentent un effet « diode » à la transition de spin. / We have studied by STM, SQUID, X-ray reflectivity, X-ray diffraction, optical absorption and XAS Fe(phen)2(NCS)2 and Fe{[3,5-dimethylpyrazolyl]3BH}2 samples deposited by thermal evaporation on Cu(100), Co(100) and SiO2 substrates, and compared with results on powder samples. We have confirmed the existence of the soft X-ray induced excited spin state trapping (SOXIESST), and investigated its properties, in particular dynamic aspects. The effect is sensitive to the intensity and the structure of the applied X-ray beam, and is non-resonant. We suggest that its efficiency is also governed by metal-ligand charge transfer states (MLCT). The study of single molecules has revealed that they could be switched by voltage pulses, and by this way building memristive devices, but only if the influence of the substrate is sufficiently reduced. We have then investigated thin films with the help from a simple thermodynamic model, and evidenced that the cooperativity was reduced and the transition temperature is modified (higher for Fe-phen, and lower for Fe-pyrz). Finally, we use these results to build multilayer vertical devices Au/Fe-phen/Au, and its electrical properties depends, according to our preliminary results, on the external stimuli (temperature, magnetic field). Notably, they present a “diode” effect at the spin transition.