Three-dimensional nanocomposite networks consisting of percolated Si nanowires in a SiOx matrix, Si:SiO2, were studied. The structures were obtained by reactive ion beam sputter deposition of SiOx (x~0.6) thin films at 450 °C and subsequent crystallization using conventional oven as well as millisecond line focus laser annealing. Rutherford backscattering spectrometry, Raman spectroscopy, X-ray diffraction, cross-sectional and energy-filtered transmission electron microscopy were applied for sample characterization. While oven annealing resulted in a mean Si wire diameter of 10 nm and a crystallinity of 72 % within the Si volume, almost single-domain Si structures with 30 nm in diameter and almost free of amorphous Si were obtained by millisecond laser application. The structural differences are attributed to the different crystallization processes: Conventional oven tempering proceeds via solid state, millisecond laser application via liquid phase crystallization of Si. The 5 orders of magnitude larger diffusion constant in the liquid phase is responsible for the three times larger Si nanostructure diameter. In conclusion, laser annealing offers not only significantly shorter process times but moreover a superior structural order of nano-Si compared to conventional heating.

The concept of percolated perpendicular media (PPM) for magnetic data storage is expected to surpass the areal storage density of 1 Tbit in -², which is regarded as the fundamental limit of conventional granular CoCrPt:oxide based recording media. PPM consist of a continuous ferromagnetic thin film with densely distributed defects acting as pinning sites for magnetic domain walls. In this study, practical realizations of PPM were fabricated by the deposition of [Co/Pt]8 multilayers with perpendicular magnetic anisotropy onto nanoperforated templates with various perforation diameters and periods. The structural defects given by the templates serve as pinning sites for the magnetic domain walls within the [Co/Pt]8 multilayers. Magnetometry at both the integral and the local level was employed to investigate the influence of the template on the magnetization reversal and the domain wall pinning. It was found, that magnetic domains can be pinned at the ultimate limit, between three adjacent pinning sites. The coercivity and the depinning field, which both are a measure for the strength of the magnetic domain wall pinning, were found to increase with increasing perforation diameter. The size of magnetic domains within the magnetic film appeared not to depend solely on the diameter of the nanoperforations or on the period of the template, but on the ration between diameter and period. By means of micromagnetic simulations it was found, that the presence of ferromagnetic material within the pinning site given supports the pinning of magnetic domain walls, compared to a pinning site that is solely given by a hole in the magnetic thin film. Investigation of the evolution of the magnetization in magnetic fields smaller than the coercive field revealed, that the energy barrier against thermally induced magnetization reversal is sufficiently large to provide long-term (> 10 years) stability of an arbitrary magnetization state. This could also be qualitatively supported by micromagnetic simulations. Static read/write tests with conventional hard disk recording heads revealed the possibility of imprinting bit patterns into the PPM under study. The minimum bit pitch that could be read back thereby depended on the period of the nanoperforated template.

Silizium basierende Technologie bestimmt den technologischen Fortschritt in der Welt und ist weiterhin ein Material für die weitere Entwicklung von Schlüsseltechnologien. Die Änderung der Silizium-Materialeigenschaft der optischen und elektronische Bandlücke durch die Reduktion der Materialdimension auf die Nanometerskala ist dabei von besonders großem Interesse. Die meisten Silizium-Nanomaterialien bestehen aus Punkt-, Kugel- oder Drahtformen. Ein relativ neues Materialsystem sind dreidimensionale, durchdringende, Nano-Komposit Netzwerke aus Silizium in einer Siliziumdioxid Matrix. Die vorliegende Arbeit untersucht die Entstehung von dreidimensionalen Silizium-Nanokomposit-Netzwerken durch Abscheidung eines siliziumreichen Siliziumoxids(SiOx, mit x<2) und anschlieÿender thermischen Behandlung. Hierbei wurden die reaktive Ionenstrahl-Sputterabscheidung (IBSD), sowie das reaktive Magnetronsputtern (RMS) verglichen. Auch wurden die Unterschiede zwischen klassischer Ofen und Millisekunden-Linienlaser Behandlung untersucht. Abgeschiedene und thermisch behandelte Dünnschichten wurden hinsichtlich der integralen Zusammensetzung, Homogenität, Morphologie und Struktur mittels Rutherford-Rückstreuspektroskopie, Ramanspektroskopie, Röntgenbeugung, spektroskopische Ellipsometrie, Photospektrometrie und (Energie gefilterter) Transmissionselektronenmikroskopie untersucht. Abhängig von der Abscheidemethode und des thermischen Ausheilprozesses wurden unterschiedliche Strukturgrößen und Kristallisationsgrade erzeugt. Insbesondere wurde gezeigt, dass während der 13 ms langen Laserbearbeitung (Ofen: 90 min) wesentlich größere Strukturen (laser:~50 nm; oven:~10 nm) mit einer deutlich höheren Kristallinität (laser:~92-99%; oven:~35-80%) entstehen. Darüber hinaus erhält sich die abscheidebedingte Morphologie nach der Ofenbehandlung, verschwindet jedoch nach der Laserprozessierung. Erklärt wurde dies mit einem Prozess über die flüssige Phase während der Laserbearbeitung, im Gegensatz zu einem Festphasenprozess bei der Ofenbehandlung. Abschließend wurde gezeigt, dass absichtlich eingebrachte vertikale und horizontale Schwankungen der Zusammensetzung genutzt werden können, um definierte Silizium Nanonetzwerke mit einer dreidimensionalen quadratischen Netzstruktur herzustellen.:1 Introduction 2 Fundamentals 2.1 The silicon - silicon oxide system 2.1.1 The Si-O phase diagram 2.1.2 Chemical reaction consideration 2.2 Phase separation of binary systems 2.2.1 Phase separation regimes 2.2.2 Diffusion in solids 2.3 Different types of silicon nanostructures 2.3.1 0D - Silicon nanoparticles 2.3.2 1D - Silicon nanowires 2.3.3 3D - Silicon nanonetworks 3 Experimental methods 3.1 SiOx thin film deposition 3.1.1 SiOx thin films by ion beam sputter deposition 3.1.2 SiOx thin films by reactive magnetron sputter deposition 3.1.3 Comparison of ion beam and magnetron sputter deposition 3.2 Thermal processing of as-deposited SiOx thin films 3.2.1 Oven treatment 3.2.2 Laser treatment 3.3 Thin-film characterization 3.3.1 Rutherford backscattering 3.3.2 Spectroscopic ellipsometry and photospectrometry 3.3.3 Raman spectroscopy 3.3.4 X-ray diffraction 3.3.5 Transmission electron microscopy 4 Results 4.1 Accessible SiOx compositions as a function of deposition and annealing method 4.2 Structure and properties of ion beam sputter deposited SiOx thin films before and after thermal processing 4.2.1 Phase- and microstructure of SiO0:6 thin films deposited by ion beam sputter deposition at 450°C 4.2.2 Phase- and microstructure of SiO0.6 thin films deposited by ion beam sputter deposition at room temperature 4.3 Structure and properties of reactive magnetron sputter deposited SiOx thin films before and after thermal processing 4.4 Multilayer SiOx films for the generation of defined squared mesh structures 5 Discussion 5.1 Compositional homogeneity of SiO0:6 thin films before and after thermal treatment 5.2 Phase structure of as-deposited SiOx thin films 5.3 Influence of the thermal treatment on the structural properties of percolated Si:SiO2 nanostructures 5.3.1 Observed structural properties 5.3.2 Origin of different structure sizes - liquid vs. solid state crystallization 5.4 Influence of the deposition temperature during ion beam sputtering on the structural properties of percolated Si:SiO2 nanostructures before and after thermal processing 5.5 Influence of the deposition method on the structural properties of percolated Si:SiO2 nanostructures 5.6 Formation of interface layers and electrical characterization 6 Summary and outlook 6.1 Summary 6.2 Outlook A EFTEM imaging / Silicon-based technology determines the technological progress in the world significantly and is still a material of choice for further development of key technologies. In particular the reduction of silicon structure sizes to a nanometer scale are of great interest. Most silicon nano structures are based on spherical, dot-like or cylindrical, wire-like geometries. A relatively new material system are three dimensional percolated nanocomposite networks of silicon within a silica matrix. To form any of these nano structures fast, room temperature processes are desired which also offer the possibility of structure modification by different process management. The present work studies the formation of three-dimensional silicon nanocomposite networks by the deposition of a silicon rich silicon oxide (SiO x , with x < 2) and subsequent thermal treatment. Thereby, reactive ion beam sputter deposition (IBSD) as well as reactive magnetron sputtering (RMS) was compared. As well, the differences between a conventional oven and a millisecond line-focused diode laser were studied. As-deposited and thermally treated thin films were characterized with regard to the overall mean composition, homogeneity, morphology and structure by Rutherford backscattering, Raman spectroscopy, X-ray diffraction, spectroscopic ellipsometry, photospectrometry as well as cross-sectional and energy-filtered transmission electron microscopy. Depending on the deposition method as well as the thermal treatment process different structure sizes and degrees of crystallization were achieved. Most notably it was found, that during 13 ms laser processing (oven: min. 90 min), much bigger structures (laser: ≈ 50 nm; oven: ≈ 10 nm) with a notably higher degree of crystallization (laser: ≈ 92-99%; oven: ≈ 35-80%) evolve. Moreover, the structure morphology after deposition is preserved during oven treatment but diminishes following laser processing. This was explained by a process via the liquid phase for laser processing in contrast to a solid state process during oven treatment. Finally it was shown, that intentional introduced vertical and horizontal composition fluctuations can be used to form well-defined silicon nano-networks with a three dimensional square mesh structure.:1 Introduction 2 Fundamentals 2.1 The silicon - silicon oxide system 2.1.1 The Si-O phase diagram 2.1.2 Chemical reaction consideration 2.2 Phase separation of binary systems 2.2.1 Phase separation regimes 2.2.2 Diffusion in solids 2.3 Different types of silicon nanostructures 2.3.1 0D - Silicon nanoparticles 2.3.2 1D - Silicon nanowires 2.3.3 3D - Silicon nanonetworks 3 Experimental methods 3.1 SiOx thin film deposition 3.1.1 SiOx thin films by ion beam sputter deposition 3.1.2 SiOx thin films by reactive magnetron sputter deposition 3.1.3 Comparison of ion beam and magnetron sputter deposition 3.2 Thermal processing of as-deposited SiOx thin films 3.2.1 Oven treatment 3.2.2 Laser treatment 3.3 Thin-film characterization 3.3.1 Rutherford backscattering 3.3.2 Spectroscopic ellipsometry and photospectrometry 3.3.3 Raman spectroscopy 3.3.4 X-ray diffraction 3.3.5 Transmission electron microscopy 4 Results 4.1 Accessible SiOx compositions as a function of deposition and annealing method 4.2 Structure and properties of ion beam sputter deposited SiOx thin films before and after thermal processing 4.2.1 Phase- and microstructure of SiO0:6 thin films deposited by ion beam sputter deposition at 450°C 4.2.2 Phase- and microstructure of SiO0.6 thin films deposited by ion beam sputter deposition at room temperature 4.3 Structure and properties of reactive magnetron sputter deposited SiOx thin films before and after thermal processing 4.4 Multilayer SiOx films for the generation of defined squared mesh structures 5 Discussion 5.1 Compositional homogeneity of SiO0:6 thin films before and after thermal treatment 5.2 Phase structure of as-deposited SiOx thin films 5.3 Influence of the thermal treatment on the structural properties of percolated Si:SiO2 nanostructures 5.3.1 Observed structural properties 5.3.2 Origin of different structure sizes - liquid vs. solid state crystallization 5.4 Influence of the deposition temperature during ion beam sputtering on the structural properties of percolated Si:SiO2 nanostructures before and after thermal processing 5.5 Influence of the deposition method on the structural properties of percolated Si:SiO2 nanostructures 5.6 Formation of interface layers and electrical characterization 6 Summary and outlook 6.1 Summary 6.2 Outlook A EFTEM imaging

The concept of percolated perpendicular media (PPM) for magnetic data storage is expected to surpass the areal storage density of 1 Tbit in -², which is regarded as the fundamental limit of conventional granular CoCrPt:oxide based recording media. PPM consist of a continuous ferromagnetic thin film with densely distributed defects acting as pinning sites for magnetic domain walls. In this study, practical realizations of PPM were fabricated by the deposition of [Co/Pt]8 multilayers with perpendicular magnetic anisotropy onto nanoperforated templates with various perforation diameters and periods. The structural defects given by the templates serve as pinning sites for the magnetic domain walls within the [Co/Pt]8 multilayers. Magnetometry at both the integral and the local level was employed to investigate the influence of the template on the magnetization reversal and the domain wall pinning. It was found, that magnetic domains can be pinned at the ultimate limit, between three adjacent pinning sites. The coercivity and the depinning field, which both are a measure for the strength of the magnetic domain wall pinning, were found to increase with increasing perforation diameter. The size of magnetic domains within the magnetic film appeared not to depend solely on the diameter of the nanoperforations or on the period of the template, but on the ration between diameter and period. By means of micromagnetic simulations it was found, that the presence of ferromagnetic material within the pinning site given supports the pinning of magnetic domain walls, compared to a pinning site that is solely given by a hole in the magnetic thin film. Investigation of the evolution of the magnetization in magnetic fields smaller than the coercive field revealed, that the energy barrier against thermally induced magnetization reversal is sufficiently large to provide long-term (> 10 years) stability of an arbitrary magnetization state. This could also be qualitatively supported by micromagnetic simulations. Static read/write tests with conventional hard disk recording heads revealed the possibility of imprinting bit patterns into the PPM under study. The minimum bit pitch that could be read back thereby depended on the period of the nanoperforated template.

L'objectif de ce travail est de développer et d’étudier une nouvelle classe de fluidesintelligents à base de dispersions colloïdales de carbone, sensibles à un stimulus externe pour desapplications de conversion et stockage d’énergie. Ces stimuli sont de différentes natures : vibrationmécanique, mouvement humain, variation de pression ou écoulement d'un solvant, et peuventaltérer les structures de tels systèmes. Ceci induit une modification de la structure locale desparticules et par conséquent des propriétés diélectriques et électriques. Habituellement, lessuspensions de matériaux carbonés sont étudiées au repos ou séchées. Toutefois, comprendre leurcomportement en flux est essentiel pour de nouvelles applications où ces matériaux sont exploitésdans des conditions dynamiques telle que le stockage d'énergie électrochimique assisté par flux(FAES). Par exemple, les matériaux à base de graphène jouent désormais un rôle important dans lesnouvelles technologies énergétiques. Ils sont utilisés comme additifs conducteurs dans lesassemblages d'électrodes, mais en raison de leur forme anisotrope spécifique, ils permettentégalement d’obtenir des fluides diélectriques sous écoulement.Les cristaux liquides d'oxyde de graphène, en tant que matériau souple électrostrictif, sont étudiéspour la récupération d'énergie mécanique, ainsi que des dispersions de noir de carbone pour lestockage d'énergie.Les propriétés diélectriques et électriques de ces dispersions fluides dans des conditions statiques etdynamiques sont mesurées et analysées. Enfin, l’effet de l’écoulement sur l’orientation et laréorganisation locale des particules et leur comportement diélectrique et électrique sont examinés. / The aim of this work is to develop and study a new class of smart fluids made of colloidalcarbon-based dispersions, which are sensitive to an external stimulus for energy storage orconversion applications. The effect of an external input, such as mechanical vibration, humanmotion, variable pressure, flowing of a solvent, can alter the structures of such systems.Consequently these changes induce modifications of the dielectric and electrical properties. Usually,the suspensions of carbon materials are investigated at rest or dried. However, their flow behavior iscritical when new technologies, which exploit these materials in dynamic conditions such as FAES(Flow-Assisted Electrochemical Energy Storage) are considered. For example, graphene-basedmaterials are now playing a significant role in energy materials. They act as conductive additives inelectrode assemblies, but due to their specific anisotropic shape they also provide a new route toachieve dielectric liquid media.In details, Graphene Oxide liquid crystals as electrostrictive soft material for mechanical energyharvesting and Carbon black dispersions as percolated flowable electrodes for capacitive energystorage are investigated.In particular, the dielectric and electrical properties of these flowable dispersions are studied understatic and dynamic conditions. The effect of the flow-rate on the local orientation and reorganizationof the particles and their related dielectric and electrical behavior are examined.