<p>This thesis concerns the growth and magnetic properties of thin films and multilayers. The samples were grown by magnetron sputtering, and characterized structurally mainly by x-ray diffraction and reflectivity. The magnetic characterization of the multilayers was done by magneto-optical Kerr technique, SQUID magnetometry and, in two samples, by neutron reflectometry.</p><p>Arrays of small elements of polycrystalline permalloy (FeNi alloy with 19 wt% Fe) are of interest as a component in non-volatile magnetic random access memories (MRAM). Here the shape dependence of the domain structure in such elements was studied by magnetic force microscopy (MFM) and in thin ring magnets the 'onion' state could be seen for the first time. Also, by post-annealing in hydrogen atmosphere the number of domains decreased in each element due to enhanced relaxation and defect reduction.</p><p>Furthermore, permalloy-based anisotropic magnetoresistance (AMR) in read heads are nowadays replaced by material combinations that have a giant magnetoresistance (GMR) effect. In this work Fe/V(001) and Fe_0.82Ni_0.18/V(001) superlattices, i.e. single-crystal-like multilayers, were investigated. These systems showed much smaller GMR effect compared to the Fe/Cr system. However, by introducing Ni into the Fe layers the magnetic anisotropy and the interlayer exchange coupling (IEC) decreased, thereby increasing the sensitivity, which is a key property for a magnetic sensor. The interface region showed a reduced magnetic moment, and the influence of the structural quality was modelled and investigated theoretically in the Fe_0.82Ni_0.18/V case. Also, in the Fe(2-3 ML)/V(x ML) superlattices (ML=monolayers) the transition temperature from long-range magnetic order to paramagnetic order oscillated with the V layer thickness (x) as a result of the oscillatory behaviour of the IEC.</p><p>The introduction of hydrogen in the non-magnetic layers of, for example, Fe/V(001) superlattices is a way to tune the IEC strength. Here the tuning was used as a tool to study the magnetic order in a low-dimensional magnet. At the critical hydrogen concentration <H/V>=0.022 the Fe layers in an Fe(2 ML)/V(13 ML) superlattice became decoupled. Then the system behaved as a two-dimensional Ising magnet with a finite ordering temperature of about 60 K.</p>

This thesis concerns the growth and magnetic properties of thin films and multilayers. The samples were grown by magnetron sputtering, and characterized structurally mainly by x-ray diffraction and reflectivity. The magnetic characterization of the multilayers was done by magneto-optical Kerr technique, SQUID magnetometry and, in two samples, by neutron reflectometry. Arrays of small elements of polycrystalline permalloy (FeNi alloy with 19 wt% Fe) are of interest as a component in non-volatile magnetic random access memories (MRAM). Here the shape dependence of the domain structure in such elements was studied by magnetic force microscopy (MFM) and in thin ring magnets the 'onion' state could be seen for the first time. Also, by post-annealing in hydrogen atmosphere the number of domains decreased in each element due to enhanced relaxation and defect reduction. Furthermore, permalloy-based anisotropic magnetoresistance (AMR) in read heads are nowadays replaced by material combinations that have a giant magnetoresistance (GMR) effect. In this work Fe/V(001) and Fe0.82Ni0.18/V(001) superlattices, i.e. single-crystal-like multilayers, were investigated. These systems showed much smaller GMR effect compared to the Fe/Cr system. However, by introducing Ni into the Fe layers the magnetic anisotropy and the interlayer exchange coupling (IEC) decreased, thereby increasing the sensitivity, which is a key property for a magnetic sensor. The interface region showed a reduced magnetic moment, and the influence of the structural quality was modelled and investigated theoretically in the Fe0.82Ni0.18/V case. Also, in the Fe(2-3 ML)/V(x ML) superlattices (ML=monolayers) the transition temperature from long-range magnetic order to paramagnetic order oscillated with the V layer thickness (x) as a result of the oscillatory behaviour of the IEC. The introduction of hydrogen in the non-magnetic layers of, for example, Fe/V(001) superlattices is a way to tune the IEC strength. Here the tuning was used as a tool to study the magnetic order in a low-dimensional magnet. At the critical hydrogen concentration &lt;H/V&gt;=0.022 the Fe layers in an Fe(2 ML)/V(13 ML) superlattice became decoupled. Then the system behaved as a two-dimensional Ising magnet with a finite ordering temperature of about 60 K.

No description available.

Zugl.: Regensburg, Univ., Diss., 2007

No description available.

No description available.

In the last years, there is a rise of interest in investigation and fabrication of nanometer sized magnetic structures due to their various applications (e.g. for data storage or micro sensors). Over the last several decades ion beam implantation became an important tool for the modification of materials and in particular for the manipulation of magnetic properties. Nanopatterning and implantation can be done simultaneously using focused-ion beam (FIB) techniques. FIB implantation and standard ion implantation differ in their beam current densities by 7 orders of magnitude. This difference can strongly influence the structural and magnetic properties, e.g. due to a rise of the local temperature in the sample during ion implantation. In previous investigations both types of implantation techniques were studied separately. The aim of the current research was to compare both implantation techniques in terms of structural changes and changes in magnetic properties using the same material system. Moreover, to separate any possible annealing effects from implantation ones, the influence of temperature on the structural and magnetic properties were additionally investigated. For the current study a model material system which is widely used for industrial applications was chosen: a 50 nm thick non-ordered nano-crystalline permalloy (Ni81Fe19) film grown on a SiO2 buffer layer based onto a (100)-oriented Si substrate. The permalloy films were implanted with a 30 keV Ga+ ion beam; and also a series of as-deposited permalloy films were annealed in an ultra-high vacuum (UHV) chamber. Several investigation techniques were applied to study the film structure and composition, and were mostly based on non-destructive X-ray investigation techniques, which are the primary focus of this work. Besides X-ray diffraction (XRD), providing the long-range order crystal structural information, extended X-ray absorption fine structure (EXAFS) measurements to probe the local structure were performed. Moreover, the film thickness, surface roughness, and interface roughness were obtained from the X-ray reflectivity (XRR) measurements. Additionally cross-sectional transmission electron microscope (XTEM) imaging was used for local structural characterizations. The Ga depth distribution of the samples implanted with a standard ion implanter was measured by the use of Auger electron spectroscopy (AES) and Rutherford backscattering (RBS), and was compared with theoretical TRIDYN calculation. The magnetic properties were characterized via polar magneto-optic Kerr effect (MOKE) measurements at room temperature. It was shown that both implantation techniques lead to a further material crystallization of the partially amorphous permalloy material (i.e. to an increase of the amount of the crystalline material), to a crystallite growth and to a material texturing towards the (111) direction. For low ion fluences a strong increase of the amount of the crystalline material was observed, while for high ion fluences this rise is much weaker. At low ion fluences XTEM images show small isolated crystallites, while for high ones the crystallites start to grow through the entire film. The EXAFS analysis shows that both Ni and Ga atom surroundings have a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter for both implantation techniques increases with increasing ion fluence according to the same linear law. The lattice parameters obtained from the EXAFS measurements for both implantation types are in a good agreement with the results obtained from the XRD measurements. Grazing incidence XRD (GIXRD) measurements of the samples implanted with a standard ion implanter show an increasing value of microstrain with increasing ion fluence (i.e. the lattice parameter variation is increasing with fluence). Both types of implantation result in an increase of the surface and the interface roughness and demonstrate a decrease of the saturation polarization with increasing ion fluence. From the obtained results it follows that FIB and standard ion implantation influence structure and magnetic properties in a similar way: both lead to a material crystallization, crystallite growth, texturing and decrease of the saturation polarization with increasing ion fluence. A further crystallization of the highly defective nano-crystalline material can be simply understood as a result of exchange processes induced by the energy transferred to the system during the ion implantation. The decrease of the saturation polarization of the implanted samples is mainly attributed to the simple presence of the Ga atoms on the lattice sites of the permalloy film itself. For the annealed samples more complex results were found. The corresponding results can be separated into two temperature regimes: into low (≤400°C) and high (>400°C) temperatures. Similar to the implanted samples, annealing results in a material crystallization with large crystallites growing through the entire film and in a material texturing towards the (111) direction. The EXAFS analysis shows a perfect near-order coordination corresponding to an fcc symmetry. The lattice parameter of the annealed samples slightly decreases at low annealing temperatures, reaches its minimum at about ~400°C and slightly rises at higher ones. From the GIXRD measurements it can be observed that the permalloy material at temperatures above >400°C reaches its strain-free state. On the other hand, the film roughness increases with increasing annealing temperature and a de-wetting of the film is observed at high annealing temperatures. Regardless of the material crystallization and texturing, the samples annealed at low temperatures demonstrate no change in saturation polarization, while at high temperatures a rise by approximately ~15% at 800°C was observed. The rise of the saturation polarization at high annealing temperatures is attributed to the de-wetting effect.

Die vorliegende Arbeit beschäftigt sich mit den Auswirkungen der Ionenimplantation auf die Materialeigenschaften verschiedener magnetischer Probensysteme. Durch die Implantation mit Ionen kann man auf vielfältige Art und Weise die Eigenschaften von magnetischen Materialien modifizieren und maßschneidern, so zum Beispiel die Sättigungsmagnetisierung und die magnetische Anisotropie. Aus der Untersuchung von drei verschiedenen Probensystemen ergibt sich die Dreigliederung des Ergebnisteils. Im ersten Teil der Arbeit, dem Hauptteil, wird die Strukturierung von Permalloyschichten durch Ionen und der Einfluss auf den anisotropen Magnetowiderstand (AMR) untersucht. Der AMR ist direkt abhängig von der Ausrichtung der Magnetisierung eines Materials zum angelegten Strom. Um die Magnetisierungsrichtung sichtbar zu machen wurde ein Kerrmikroskop benutzt. Dieses wurde im Rahmen dieser Arbeit technisch erweitert um gleichzeitig auch den AMR messen zu können. Damit war es erstmalig möglich den AMR und die magnetischen Domänenkonfigurationen direkt zu vergleichen. Durch eine weitere Modifikation des Kerrmikrosops ist es möglich quantitative Bilder eines kompletten Ummagnetisierungsvorganges zu messen. Es konnte gezeigt werden, dass der berechnete AMR des Bildausschnittes mit dem gemessenen übereinstimmt. Der AMR ist abhängig von der Streifenbreite, der Streifenausrichtung zum Strom, der Stärke der induzierten Anisotropie, dem angelegten Feldwinkel und der Sättigungsmagnetisierung. Im Fall von schmalen Streifen führt das zweistufige Schalten zu einem AMR-Maximum, wenn die Streifen mit der niedrigeren Sättigungsmagnetisierung geschaltet haben. Das Zusammensetzen der Streifenstruktur ermöglicht es den AMR gezielt zu manipulieren. Bei geringer induzierter Anisotropie sind verschiedene komplexe Domänen messbar, welche sich in einem asymmetrischen AMR widerspiegeln. So kann der AMR auf vielfältige Weise manipuliert und deren Abhängigkeit von den magnetischen Domänen mittels Kerrmikroskopie gemessen werden. Im zweiten Teil wurde die Erzeugung eines Anisotropiegradienten durch Ionenimplantation in einem Speichermedium untersucht. Hierbei handelt es sich um eine Kooperation mit Peter Greene (University of California Davis) und Elke Arenholz (Lawrence Berkeley Laboratory). Nachdem die Ionenverteilung in dem Material mit TRIDYN simuliert wurde, erfolgte eine Implantation in die oberen Schichten der Co/Pd Multilagen. Dieses hat eine Veränderung der magnetischen Anisotropie zur Folge. Die Ummagnetisierungskurven sind mit dem polaren magnetooptische Kerreffekt (polaren MOKE) und Vibrationsmagnetometrie vermessen worden. Außerdem fand eine Strukturanalyse mit Röntgenreflektrometrie und Röntgendiffraktometrie statt. Die abschließende Beurteilung des Schaltverhaltens erfolgte durch die Auswertung der Ummagnetisierungskurven erster Ordnung. Es ist uns gelungen die oberen Schichten durch die Implantation weichmagnetisch zu machen. Die darunterliegenden Schichten sind noch hartmagnetisch und das Material zeigt textit{exchange spring} Verhalten. Es erfüllt somit die Voraussetzungen, um als Speichermedium genutzt zu werden. Damit konnte erfolgreich gezeigt werden, dass man mit Ionenimplantation einen Anisotropiegradienten in einem Speichermedium erzeugen kann und dadurch das gewünschte Schaltverhalten erzeugt. Im dritten Teil, in einem Projekt mit Björn Obry (TU Kaiserslautern), geht es um die Erzeugung eines Spinwellenleiters und eines magnonischen Kristalls durch die Ionenimplantation in Permalloy. Zur Herstellung des Spinwellenleiters und des magnonischen Kristalls macht man sich die lokale Reduzierung der Sättigungsmagnetisierung durch die Implantation zu nutze. Es wurden Messungen mit dem polaren MOKE gemacht. Die Spinwellencharakterisierung ist mit dem Brillouin-Lichtstreumikroskop durchgeführt worden. Es war möglich die Ionenimplantation zur Herstellung eines magnonischen Kristalls und eines Spinwellenleiters zu nutzen. Das Verändern von magnetischen Materialeigenschaften durch Implantation eröffnet somit verschiedene Möglichkeiten. Mit Ionenimplantation kann man Permalloy so strukturieren, dass man den AMR gezielt manipulieren kann. Außerdem wurde Ionenimplantation genutzt um einen Anisotropiegradienten in einem Speichermedium zu erzeugen. Durch diesen Anisotropiegradient konnte das Schaltverhalten gezielt modifiziert werden. Mit Hilfe von Ionenimplantation kann man auch ein magnonisches Kristall und einen Spinwellenleiter herstellen. / This thesis deals with magnetic modification of ferromagnetic films by ion implantation, such as induced changes of the magnetic anisotropy and changes in the saturation magnetization. Three different sample structures were investigated. Therefore the result section is divided into three parts. The influence of ion induced magnetic patterning on the anisotropic magnetoresistance (AMR) is investigated in the first part. The AMR directly depends on the angle between the applied current and the magnetization of the material. To investigate this relationship a Kerr microscopy,for observing the magnetic domains was combined with resistance measurements. The measurements were performed on stripe patterned permalloy samples. This is the main part of the thesis. The creation of an anisotropy gradient in a storage media by ion implantation is the topic of the second part. It was a collaborative project with Peter Greene (University of California Davis) and Elke Arenholz (Lawrence Berkeley Laboratory). The goal was to create a magnetic anisotropy gradient by introducing ions in the upper layer of the Co/Pd- multilayer. After TRIDYN simulations of the ion distribution, the implantation was performed and the magnetization curves were measured with polar magneto-optical Kerr effect and vibrating sample magnetometry. In addition to this, structural characterization was carried out by x-ray reflection and x-ray diffraction measurements. For the final determination of the switching behavior first order reversal curves were analyzed. The aim of the third part was to create a spin wave guide and a magnonic crystal by local ion implantation. In this project with Björn Obry (TU Kaiserslautern) the characteristic of the ions to reduce the saturation magnetization in permalloy was used and the effect on the spin wave propagation was analyzed. Polar MOKE was performed to determine the saturation magnetization. Brillouin light scattering microscopy was used to analyze the spin wave behavior inside the material.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / In this work the behavior of the magnetoimpedance (MI) in ferromagnetic multilayered (Ni81Fe19/Cu) produced by magnetron sputtering was studied. In all measurements, the probe current was applied perpendicularly to the film surface. The MI measurements were performed in the frequency range 100kHz - 1.8GHz with an HP-4396B impedance analyzer and a specially designed sample holder. Magnetoimpedance ratios of 150% were obtained in some of the studied samples. / Neste trabalho foi estudado o comportamento da magnetoimpedância (MI) em amostras ferromagnéticas (Ni81Fe19) estruturadas em camadas intercaladas com metal normal (Cu) produzidas por magnetron sputtering com a corrente de sonda sendo aplicada perpendicularmente ao plano do filme. A faixa de freqüência usada neste trabalho foi de 100kHz a 1.8GHz num analisador de impedância modelo HP-4396B. Deste modo conseguiuse variações percentuais na MI da ordem de 150%.

Made available in DSpace on 2015-03-03T15:15:29Z (GMT). No. of bitstreams: 1 CristovaoPNJ_DISSERT.pdf: 20191942 bytes, checksum: ddd5466a16c8a26b044b5c940b443f3c (MD5) Previous issue date: 2013-06-18 / Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico / The ferromagnetic materials play an important role in the development of various electronic devices and, have great importance insofar as they may determine the efficiency, cost and, size of the devices. For this reason, many scientific researches is currently focused on the study of materials at ever smaller scales, in order to understand and better control the properties of nanoscale systems, i.e. with dimensions of the order of nanometers, such as thin film ferromagnetic. In this work, we analyze the structural and magnetic properties and magnetoresistance effect in Permalloy-ferromagnetic thin films produced by magnetron sputtering. In this case, since the magnetoresistance effect dependent interfaces of thin films, this work is devoted to the study of the magnetoresistance in samples of Permalloy in nominal settings of: Ta[4nm]/Py[16nm]/Ta[4nm], Ta[4nm]/Py[16nm]/O2/Ta[4nm], Ta[4nm]/O2/Py[16nm]/Ta[4nm], Ta[4nm]/O2/Py[16n m]/O2/Ta[4nm], as made and subjected to heat treatment at temperatures of 160?C, 360?C e 460?C, in order to verify the influence of the insertion of the oxygen in the layer structure of samples and thermal treatments carried out after production of the samples. Results are interpreted in terms of the structure of the samples, residual stresses stored during deposition, stresses induced by heat treatments and magnetic anisotropies / Os materiais ferromagn?ticos exercem um papel importante no desenvolvimento de diversos dispositivos eletr?nicos e t?m grande import?ncia na medida que os mesmos podem determinar a efici?ncia, o custo e o tamanho dos dispositivos. Por este motivo, muitas das investiga??es cient?ficas t?m, atualmente, se concentrado no estudo de materiais em escalas cada vez menores, a fim de entender e controlar melhor as propriedades dos sistemas nanosc?pios, ou seja, com dimens?es da ordem de 10?9 m, tais como filmes finos ferromagn?ticos. Nesse trabalho, s?o analisadas as propriedades estruturais e magn?ticas e o efeito da magnetorresist?ncia em filmes finos ferromagn?ticos de Permalloy produzidos por magnetron sputtering. Neste caso, visto que o efeito da magnetorresist?ncia ? dependente das interfaces dos filmes finos, este trabalho ? dedicado ao estudo da magnetorresist?ncia em amostras de Permalloy com configura??es nominais de: Ta[4nm]/Py[16nm]/Ta[4nm], Ta[4nm]/Py[16nm]/O2/Ta[4nm], Ta[4nm]/O2/Py[16nm]/Ta[4nm], Ta[4nm]/O2/Py[16n m]/O2/Ta[4nm], na condi??o de como feitas e submetidas a tratamentos t?rmicos com temperaturas de 160 C, 360 C e 460 C, a fim de verificar a influ?ncia da inser??o das camadas de O2 na estrutura das amostras e de tratamentos t?rmicos realizados ap?s a produ??o das amostras. Os resultados obtidos s?o interpretados em termos da estrutura das amostras, tens?es residuais armazendas durante a deposi??o, tens?es induzidas pelos tratamentos t?rmicos e anisotropias magn?ticas.