Climate change has given rise to higher demand of renewable energy. Conventional non-organic solar cells are still seen the most on the market but the last 10-20 years there has been an exponential increase in research about organic solar cells. The research demands measurements done on increasing fast time scales as insights about the topic and technology develops. Here is presented configurations done at the Isaak spectrometer at Freie Universit\"{a}t Berlin. The spectrometer is used for studying charge transport in organic solar cells as well as hybrid solar cells made from organic and inorganic semiconductors. One important feature for the time response is the Q factor property of the resonator in which the sample is placed. The Q factor describes the rate of energy loss relative to the stored energy of the resonator. The Q factor dependency over different temperature was studied in order to gain vital knowledge about the time response of the setup. Further new equipment was been installed at the setup and programmed in FSC2. This in order to increase the sensitivity of the optical setup, secure the personnel from possible dangerous excitation laser and in order to do more automated measurements. As the optical path was modified by installing a new optical fiber a new calibration had to be done. Finally, in order to try the functionality of the new equipment an automated energy dependency measurement was done on the polymer MEH-PPV and the polymer:fullerene blend MEH-PPV:PCBM. The automatic process of measuring was successful.

The G-center has recently been identified as the first deterministic single-photon punctual emitter isolated in silicon. This discovery is of great interest for largescale quantum technologies, due to the abilities of silicon in terms of integration and scalability. However, the spontaneous emission rate of the G-center still needs to be controlled in order to engineer a useful Single-Photon Source. This could be achieved by incorporating a single G-center in resonant microcavities to benefit from the Purcell effect. As a first step in this direction, we have studied in this project micro-cavities containing an ensemble of G-centers, more precisely Si micro-disks and micro-rings on oxide, with several objectives: the evaluation of the quality factor of micro-cavities containing G-centers, the demonstration of an optical activity of G-centers after the processing of the silicon micro-structures, and the evaluation of their potential as gain medium for integrated microlasers on SOI. The observation of bright photoluminescence from G-centers and of resonant cavity modes with Q’s in the few thousands range confirms the compatibility of G-centers with standard silicon processing steps, and is encouraging for future quantum optics experiments on isolated G centers in micro-cavities. Our results also tend to show that gain may be available in the material, but residual absorption still needs to be decreased to achieve lasing. / G-center har nyligen identifierats som den första determinitiska ponctual enfoton källen isolerad i kisel. Denna upptäckt är av stort intresse för kvantteknologier p.g.a. kisels förmåga gällande integration och skalbarhet. G-centers spontana rekombinationshastighet behöver dock kontrolleras för att skapa en användbar enfoton källa. Det kan göras genom Purcell-effekten i en optisk resonator. Som ett första steg har vi studerat mikroresonatorer som innehåller G-center i det presenterade projektet, med flera mål: utvärdering av kvalitetsfaktor för mikroresonatorer som innehåller G-center, demonstration av optisk aktivitet av G-center efter tillverkning av kiselmikrostrukturer, och utvärdering av deras potential för integrerade mikrolaser på SOI. Observation av stark fotoluminescens av G-center och resonatormoder med stor-Q bekräftar kompatibilitet mellan G-center och vanliga steg för bearbetning av kisel, och är uppmuntrande för framtida Kvantum Optik experimenter med isolerade G-center i mikroresonatorer. Resultaten visar att ljusförstärkning troligtvis börjar, men absorption av andra defekter måste minskas för att uppnå laserregim.

Made available in DSpace on 2014-10-09T12:35:51Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:03:39Z (GMT). No. of bitstreams: 0 / Dissertação (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Made available in DSpace on 2014-10-09T12:35:51Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:03:39Z (GMT). No. of bitstreams: 0 / Pesquisas e publicações sobre polímeros luminescentes vêm sendo desenvolvidas nos últimos anos devido à inovação acadêmica, porém ainda no âmbito nacional possuem aplicação industrial limitada. Marcadores ópticos processados são pouco explorados devido à dificuldade de processamento dos materiais poliméricos luminescentes com estabilidade de luminescência. Os materiais utilizados para o processamento de polipropileno luminescente foram Poliamida 6 (PA6) dopada com complexo sintetizado de [Eu(tta)3(H2O)2] obtida através do processo de diluição do polímero e técnica de derramamento. As poliolefinas, por serem inertes, não se adequam ao procedimento comum de dopagem, assim no presente trabalho, o polipropileno luminescente foi preparado indiretamente por dopagem com poliamida dopada com complexo de európio em processamento por extrusão. As técnicas de caracterização utilizadas foram a Análise Térmica (TG), Calorimetria Exploratória Diferencial (DSC), Difração de Raios-X (XRD), Espectroscopia de infravermelho (FT-IR) e estudo das propriedades fotoluminescentes. A blenda PP/PA6:Eu(tta)3 processada apresentou propriedades luminescentes observadas nas transições intraconfiguracionais de bandas finas 4f6 - 4f6 relativas aos níveis de excitação de energia 7F0 → 5L6 (394nm), 7F0 → 5D3 (415nm), 7F0 → 5D2 (464nm), 7F0 → 5D1 (525nm) e 7F0 → 5D0 (578nm). Tanto a blenda de PP/PA6:Eu(tta)3 e os filmes de PA6:Eu(tta)3 quando expostos a luz UV (365nm) apresentaram luminescência vermelha. Os resultados de TG mostraram que sob atmosfera de O2 o PP dopado PA6:Eu(tta)3 apresentou maior estabilidade do que o PP puro. Neste trabalho foi possível processar PP/PA6:Eu(tta)3 com propriedades térmicas e fotoestabilidade, que permitem sua utilização com marcador óptico em processamentos. / Dissertação (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Dans leurs usages courants comme isolants électriques, les matériaux solides organiques sont constitutifs aussi bien des câbles de transport d'énergie électrique, des circuits de commande et de conversion de puissance que des composants (micro)électroniques ou des systèmes embarqués (revêtement thermique des satellites, batteries d'accumulateurs...). La diversité des contraintes d'utilisation auxquelles ils sont soumis (champ électrique, rayonnement, température, humidité...) les prédisposent à emmagasiner des charges en leur sein, susceptibles d'affecter la fiabilité des systèmes qui en dépendent. L'un des moyens communément mis en œuvre pour étudier le comportement électrique de ces charges est la mesure de la distribution spatio-temporelle des charges d'espace, en soumettant le diélectrique à une différence de potentiel continue à travers deux électrodes. Cette méthode ne permet cependant pas toujours de distinguer clairement la contribution des charges dues à la génération, d'une part, et celles dues aux phénomènes de transport, d'autre part. Cette étude propose une approche alternative, consistant à déposer sous vide des charges (électrons) au sein de l'isolant par le biais d'un faisceau d'électrons, à une position connue et en quantité maîtrisée, en prenant en compte d'autres processus physiques liés à l'implantation d'électrons afin de prévoir et modéliser le comportement de ces matériaux irradiés. Des films de PolyEthylène basse densité (PEbd), préparés par thermomoulage, ont été irradiés par un faisceau d'électrons de 80 keV avec un flux de 1 nA/cm2. Les mesures de charge d'espace par la méthode Electro-Acoustique Pulsée (PEA), réalisées d'abord in-situ, puis ex-situ sous polarisation électrique DC, confirment une localisation effective de charges au sein du matériau. Les résultats sous polarisation électrique après irradiation mettent en évidence une importante présence de charges positives dans la zone irradiée du diélectrique. Les caractérisations électriques des films PEbd irradiés montrent un comportement complètement différent de celui d'un même matériau non-irradié, laissant penser à une modification de la structure chimique du matériau. Des mesures physico-chimiques (spectroscopie infra-rouge, Photoluminescence et Analyse Enthalpique Différentielle-DSC) sur ces films PEbd irradiés, ne montrent pas une dégradation significative de la structure chimique du diélectrique qui expliquerait le comportement électrique observé sous polarisation post-irradiation. Des mesures complémentaires montrent le comportement réversible du PEbd irradié puis polarisé, qui serait uniquement lié à la présence des charges générées par le faisceau. Les données expérimentales de cette étude ont parallèlement alimenté un modèle numérique de transport de charges, développé pour tenir compte des contraintes sous irradiation. Ce modèle a permis de reproduire les résultats d'implantation de charge par faisceau d'électrons in-situ ainsi que la majorité des processus électriques observés sur du PEbd irradié puis polarisé. Il confirme l'impact de la charge déposée par faisceau d'électrons sur le comportement sous polarisation et permet de conclure quant à l'origine des charges positives observées post-irradiation, qui seraient dues aussi bien aux phénomènes d'injection aux électrodes qu'à la création de paires électrons/trous par le faisceau d'électrons pendant l'irradiation. / In their common uses as electrical insulators, organic solid materials are constitutive of electric power transmission cables, power control and conversion circuits as well as (micro) electronic components or embedded systems (thermal coating of satellites, batteries of accumulators, etc.). Under various constraints of use (electric field, radiation, temperature, humidity ...) they can accumulate charges in their bulk which could affect the reliability of the systems in which they are employed. One of the commonly used means to study the electrical behavior of these charges is to measure the spatiotemporal distribution of charges by subjecting the dielectrics to a continuous potential difference between two electrodes. However, this method does not always allow clearly distinguishing the contribution of charges due to generation on the one hand and the one due to transport phenomena on the other hand. This study proposes an alternative approach, consisting in generating charges (electrons) within the electrical insulation using an electron-beam under vacuum. The charges are hence deposited at a known position and in a controlled quantity. Other physical processes related to the implantation of electrons must then be taken into account in order to predict and model the behavior of these irradiated materials. Low-density polyethylene (LDPE) films, prepared by thermal molding, were irradiated by a 80 keV electron-beam with a current flux of 1 nA/cm2. Space charge measurements using the Pulsed Electro-Acoustic (PEA) method, performed first in-situ and then ex-situ under DC electrical polarization, confirm an effective localization of charges within the material. The results under electrical polarization after irradiation show an important amount of positive charges in the irradiated zone of the dielectric. The electrical characterizations of irradiated LDPE films show a completely different behavior compared to the same non-irradiated material, suggesting a modification of the chemical structure of the material. Physico-chemical measurements (infrared spectroscopy, Photoluminescence and Differential Scanning Calorimetry-DSC) on these irradiated PEbd films do not show a significant degradation of the chemical structure of the dielectric which would explain the observed electrical behavior under post-irradiation polarization. Additional measurements show the reversible behavior of the irradiated then polarized PEbd, which would be only related to the presence of the charges generated by the beam. The experimental data of this study have simultaneously fed a numerical model of charge transport, developed to take into account the irradiation constraints. This model allows reproducing the in-situ results of charge implantation by the electron beam as well as the majority of the electrical processes observed on irradiated and polarized LDPE. It confirms the impact of the electron-beam deposited charge on the behavior under polarization and allows concluding on the origin of the positive charges observed after irradiation, which would be due to injection at the electrodes as well as to the creation of electron-hole pairs by the electron-beam during irradiation.

Ce manuscrit porte sur l'étude de transducteur acoustique couvrant la plage de fréquence allant de 100 GHz à 1 THz. Un laser impulsionnel pico-seconde est à l'origine de ces hautes fréquences. Les structures utilisées pour la génération sont un empilement bicouches GaAs/AlAs. La sensibilité de génération et de détection d'onde acoustique en fonction de la longueur d'onde est étudiée expérimentalement. Afin d'améliorer l'efficacité de transduction, une micro-cavité optique est utilisée pour augmenter l'interaction entre le rayonnement laser et le super-réseau. Ces transducteurs opto-acoustiques sont utilisés pour mesurer les temps de vie des phonons subterahertz et terahertz. Une anomalie dans le comportement en fréquence des temps de vie a été mise en évidence dans l'arséniure de gallium. L'utilisation de courbes de dispersion issues de calculs ab initio associée à l'approche de Landau-Rumer pour les temps de vie ultra-sonores permet d'expliquer ce comportement inattendu.

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