Multi-domain Vertical Alignment Flexible Liquid Crystal Display based on photolithography and replica-Molding method has been demonstrated. In order to maintain a uniform cell gap between flexible substrate,the microstructures were fabricated with polydimethylsiloxane (PDMS) material by replica-molding method. The microstructures master were designed and fabricated using a photosensitive resin (SU-8) by photolithography. The microstructures of pixel-encapsulated walls enhance the mechanical strength to prevent the liquid crystal molecules flow in the bend state deformations. Besides, the elastomeric material, PDMS, provide weak surface energy and induce vertical alignment for liquid crystal spontanelusly without any surface treatment. The microstructure protrusions made by PDMS can provide multi-domain vertical alignment (MVA) effect with wide viewing angle and high contrast ratio. Therefore, this method could be implemented for achieving multi-domain vertical alignment on a flexible LCD applications. The flexible LCD have great stability reproducibility, durability and good electro-optical performances.

Malaria remains a serious concern for people living and traveling to warm climates in Africa, Asia, and some parts of America. Understanding the mechanism of the malaria parasite in the liver phase could lead to important discoveries for preventative and treatment therapeutics before the disease develops into the blood stage. While in vitro liver cell culture models have been explored, a device that mimics the liver cell architecture with the capability of high-resolution imaging has never been created. In this research, a cell culture microfluidic device was designed and fabricated with a membrane integrated design to mimic the architecture of a liver, cell chamber dimensions affable for high-resolution imaging, and fluidic port design for optical access to both sides of the membrane for the study of malaria parasite invasion.

Two technologies, immersion and imprint lithography, represent important stepping stones for the development of the next generation of lithography tools. However, although the two approaches offer important advantages, both pose many significant technological challenges that must be overcome before they can be successfully implemented. For imprint lithography, special care must be taken when choosing an etch barrier because studies have indicated that some physical material properties may be size dependent. Additionally, regarding immersion lithography, proper image focus requires that the optical path length between the lens and substrate be maintained during the entire writing process. The work described in this document was undertaken to address the two challenges described above. A new mathematical model was developed and used in conjunction with AFM nano-indentation techniques to measure the elastic modulus of adhesive, thin polymer films as a function of the film thickness. It was found that the elastic modulus of the polymer tested did not change appreciably from the value determined using bulk measurement techniques in the thickness range probed. Additionally, a method for monitoring and controlling the optical path length within the gap of a nearly index-matching cavity based on coherent broadband interference was developed. In this method, the spectrum reflected for a cavity illuminated with a modelocked Ti:Sapphire laser was collected and analyzed using Fourier techniques. It was found that this method could determine the optical path length of the cavity, quickly and accurately enough to control a servo-based feedback system to correct deviations in the optical path length in real time when coupled with special computation techniques that minimized unnecessary operations. / text

In 1960's Gordon Moore predicted that the increase in the number of components in integrated circuits would exponentially decrease the relative manufacturing cost per component with time. The semiconductor industry has managed to keep that pace for nearly 45 years and one of the main contributors to this phenomenal improvement in technology is advancement in the field of lithography. However, the technical challenges ahead are severe and the future roadmap laid by the International Technology Roadmap for Semiconductors looks mostly red (i.e. no solution has been found to specific problem). There are efforts in the industry and academia directed toward development of newer, alternative lithographic techniques. Step and Flash Imprint Lithography (SFIL) has recently emerged as one of the most promising alternatives, capable of producing high resolution patterns. While it has numerous advantages over conventional photolithography, several engineering challenges must be overcome to eliminate defects due to the nature of contact imprinting if SFIL is to be a viable alternative technique for manufacturing tomorrow's integrated circuits. The complete filling of template features is vital in order for the SFIL imprint process to truly replicate the template features. The feature filling phenomena for SFIL was analyzed by studying diffusion of a gas, entrapped in the features, through liquid imprint resist. A simulation of the dynamics of feature filling for different pattern configurations and process conditions during the SFIL imprint step is presented. Simulations show that initial filling is pressure-controlled and very rapid; while the rest of the feature filling is diffusion-controlled, but fast enough that diffusion of entrapped gas is not a cause for non-filling of features. A theory describing pinning of an air-liquid interface at the feature edge of a template during the SFIL imprint step was developed, which shows that pinning is the main cause of non-filling of features. Pinning occurs when the pressure at the air-liquid interface reaches the pressure of the bulk liquid. At this condition, there is no pressure gradient or driving force to move the liquid and fill the feature. The effect of several parameters on pinning was examined. A SFIL process window was established and template modifications are proposed that minimize the pinning at the feature edge while still preventing any extrusion along the mesa (pattern containing area on the template) edge. Part of semiconductor manufacturing community believes that optical lithography has the capability to drive this industry further and is committed to the continuous improvement of current optical patterning approaches. Some of the major challenges with shrinking critical dimensions (CDs) in coming years are the control of line-edge roughness (LER) and other related defects. The current CDs are such that the presence or absence of even a single polymer molecule can have a considerable impact on LER. Therefore molecular level understanding of each step in the patterning process is required. Computer simulations are a cost-effective approach to explore the huge process space. Mesoscale modeling is one promising approach to simulations because it captures the stochastic phenomena at a molecular level within reasonable computational time. The modeling and simulation of the post-exposure bake (PEB) and the photoresist dissolution steps are presented. The new simulator enables efficient exploration of the statistical excursions that lead to LER and the formation of insoluble residues during the dissolution process. The relative contributions of the PEB and the dissolution step to the LER have also been examined in the low/high frequency domain. The simulations were also used to assess the commonly proposed measures to reduce LER. The goal of the work was to achieve quantification of the effect of changes in resist composition, developer concentration, and process variables on LER and the associated defectivity. / text

This thesis work describes the fabrication and surface enhanced Raman spectroscopy (SERS) characterization of vertically aligned nitrogen (N) doped multi walled carbon nanotube (MWCNT) forests coated by silver (Ag) and gold (Au) nanoparticles. In the present work, the CNT forests were grown from a catalyst metal layer by the chemical vapor deposition (CVD) process at temperature of 800 oC and a physical vapor deposition (PVD) and annealing processes were applied subsequently for the evaporation and diffusion of noble metal nanoparticles on the forest. Transistor patterning of 20, 50 and 100 μm were made onto the silicon-oxide (SiO2) wafers through the photolithography process with and without depositing a thickness of 10 nm titanium (Ti) buffer layer on the Si-surfaces. Iron (Fe) and cobalt (Co) were used together to deposite a thickness of 5 nm catalyst layer onto the Single Side Polished (SSP) wafers. As carbon and nitrogen precursor for the CNT growth was used pyridine. Two different treatment times (20 and 60 minutes) in the CVD process determined the CNT forest height. Scanning Electron Microscopy (SEM) imaging was employed to characterize the CNT forest properties and Ag and Au nanoparticle distribution along the CNT walls. The existence of “hot spots” created by the Ag and Au nanoparticles through the surface roughness and plasmonic properties was demonstrated by the SERS measurements. Accordingly, the peak intensity at wave number of 1076 cm-1 was picked up from each SERS spectra to establish the Ag- and Au-trend curves with different concentrations of 4-ATP solution. The SERS mapping was also carried out to study the Ag- and Au-coated CNT surface homogeneity and “hot spots” distribution on the CNT surface. The SERS enhancement factors (EF) were calculated by applying an analyte solution of ethanolic 4-ATP on the CNT surface. The calculated values of EF from Ag- and Au-coated CNT forests were 9×106 and 2.7×105 respectively.

The image quality and collimation in a multiple-optical-axis pattern-integrated interference lithography system are evaluated for an elementary optical system composed of single-element lenses. Image quality and collimation are individually and jointly optimized for these lenses. Example images for a jointly optimized system are simulated using a combination of ray tracing and Fourier analysis. Even with these non-optimized components, reasonable fidelity is shown to be possible.

The research described herein is aimed at exploring the thermo-mechanical properties of thiol-ene polymers in bulk form, investigating the ability of thiol-ene polymers to behave desirably as photolithographic media, and providing the first characterization of the mechanical properties of two-photon stereolithography-produced polymer structures. The thiol-ene polymerization reaction itself is well-characterized and described in the literature, but the thermomechanical properties of thiol-ene and thiol-ene/acrylate polymers still require more rigorous study. Understanding the behavior of thiol-ene networks is a crucial step towards their expanded use in bulk form, and particularly in specialized applications such as shape memory devices. Additionally, the thiol-ene polymerization reaction mechanism exhibits unique properties which make these polymers well suited to photolithography, overcoming the typical dichotomy of current materials which either exhibit excellent photolithographic behavior or have controllable properties. Finally, before two-photon stereolithography can create mechanisms and devices which can serve any mechanically functional role, the mechanical properties of the polymers they produce must be quantitatively characterized, which is complicated by the extremely small scale at which these structures are produced. As such, mechanical characterization to date has been strictly qualitative. Fourier transfer infrared spectroscopy revealed functional group conversion information and sol-fraction testing revealed the presence of unconverted monomer and impurities, while dynamic mechanical analysis and tensile testing revealed the thermomechanical responses of the systems. Nanoindentation was employed to characterize the mechanical properties of polymers produced by two-photon stereolithography. Optical and electron microscopy were exploited to provide quantitative and qualitative evaluations of thiol-ene/acrylate performance in small-scale polymerization regimes. The broad objective of the research was to explore thiol-ene polymer behavior both in bulk and at the small scale in an effort to supplement the material library currently used in these fields and to expand the design envelope available to researchers. The significance of the research is the advancement of a more complete and fundamental understanding of thiol-ene polymerization from kinetics to final properties, the quantitative establishment of the mechanical properties of materials created with two-photon stereolithography, and the comprehensive characterization of a supplementary class of photopatternable polymers with greater property tunability than is possible with currently used materials.

Thesis (Ph. D.)--University of Missouri-Columbia, 2007. / The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on January 30, 2008) Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.

Thesis (M.S.)--Rochester Institute of Technology, 2005. / Typescript. Includes bibliographical references (leaves 94-102).