Made available in DSpace on 2014-06-11T19:29:09Z (GMT). No. of bitstreams: 0 Previous issue date: 2011-02-18Bitstream added on 2014-06-13T19:17:20Z : No. of bitstreams: 1 teixeira_gf_me_araiq.pdf: 3060049 bytes, checksum: 1e07eb9c5f9e559d8f613ee18e23f273 (MD5) / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Neste trabalho foram obtidos pós de Titanato Zirconato de Chumbo (PZT) com razão Zr/Ti igual 52/48 puro com diferentes concentrações de precursor (0,31 molL-1, 0,16 molL-1 e 0,08 molL-1) e pós com adição de Álcool Polivinílico (PVA) que atua como agente de cristalização. Para a preparação dos pós foi utilizada a síntese hidrotérmica assistida por micro-ondas, este método dentre outras vantagens permite obter materiais cristalinos em menores tempos de síntese a baixas temperaturas. Os pós de PZT puro e com PVA foram obtidos em diferentes tempos de síntese a temperatura de 180°C. As amostras foram caracterizadas por Difratometria de Raios X (DRX), Espectroscopia Raman, Microscopia Eletrônica de Varredura de alta resolução (MEV-FEG), Espectroscopia de Fotoluminescência (FL) e Espectroscopia na região do Ultra-Violeta Visível (UV-Vis). Os resultados de DRX indicaram a obtenção de PZT puro e PZT/PVA com estrutura cristalina tetragonal e romboédrica à partir de 1hora de síntese, independente da concentração dos precursores. As partículas possuem forma semelhante a cubos ou folhas que formam mesoestruturas para PZT puro e PZT/PVA. O band gap de energia calculado à partir dos dados de UV-Vis indicaram valores no intervalo de 2,7 eV a 3,1 eV. As bandas de emissão fotoluminescente seguem o modelo da banda larga com máximo de emissão predominante na região verde do espectro eletromagnético / Pure powders of Lead Zirconate Titanate (PZT) with ratio Zr/Ti equal 52/48 with different concentrations of precursor (0.31 mol L-1, 0.16 mol L-1 and 0.08 mol L-1) and PZT powders with addition of Polyvinyl Alcohol (PVA) which acts as an agent of crystallization was obtained using hydrothermal synthesis assisted by microwaves. Among other advantages this method allows to obtain crystalline materials synthesis time decreases and low temperatures. The powders of pure PZT and PZT/PVA were obtained by different times of the synthesis at temperature 180°C. The samples were submitted to characterizations by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy high resolution (SEM-FEG), photoluminescence spectroscopy (PL), Ultra-Violet Visible (UV-Vis) spectroscopy. The XRD results indicate that pure PZT and PZT/PVA present a tetragonal and rhombohedral structure since one hour of synthesis, independent of precursors concentration. The shape of particles resembles cubes or sheets that form mesostructure for pure PZT and PZT/PVA. The band gap energy calculated from UV-Vis data indicated values in the range of 2.7 eV to 3.1 eV. The photoluminescent emission bands follow the model of broadband with maximum emission predominant in the green region of the electromagnetic spectrum

Orientador: Elson Longo da Silva / Banca: Maria Aparecida Zaghete Bertochi / Banca: Valmor Roberto Mastelaro / Resumo: No presente trabalho, foram sintetizados microcristais de α-Ag2WO4 dopados com Mo6+ nas concentrações de 0, 0,1, 0,2, 0,4 e 0,8% através do método de co-precipitação a 100 ºC na presença de PVP. Obteve-se materiais policristalinos de cor amarela-clara que foram caracterizados por DRX, espectroscopia MicroRaman, microscopia eletrônica de varredura (MEV), espectroscopia de fotoluminescência e UV/Vis por refletância difusa. O refinamento Rietveld, usando os dados da ficha ICSD Nº 4165, foi empregado para o cálculo dos parâmetros rede e posições atômicas. Indexou-se os DRX das amostras como α e γ-Ag2WO4 pelas fichas cristalográficas JCPDS 34-0061 e JCPDS 33-1197, respectivamente. Os resultados revelaram estruturas com alto grau de desordem que aumenta com o aumento de concentração do Mo6+, redução progressiva do volume de cela unitária e formação da fase cúbica com maiores concentrações do dopante. Exceto para a amostra com 0,1% de dopante, obteve-se cristais com morfologia hexagonal, tamanho em torno de 1 μm, apresentando defeitos morfológicos como fraturas, superfícies irregulares e cristais polifacetados. Notou-se rápido crescimento de nanopartículas de prata na superfície do material durante exposição ao feixe de elétrons acelerados sob 10 keV no microscópio eletrônico de varredura. As amostras apresentaram ainda comportamento ôhmico com resistência da ordem de 1010 Ω・m, com cristais de α-Ag2WO4 puro exibindo forte fotoluminescência na região do vermelho que é reduzida com a dopagem e sem apresentar considerável variação no band gap em função da concentração de Mo6+. / Abstract: In this study were synthesized Mo6+ doped α-Ag2WO4 microcrystals at concentrations of 0, 0,1, 0,2 0,4 e 0,8% by co-precipitation at 100 ºC in presence of polyvinylpyrrolidone surfactant. Were obtained pale-yellow polycrystalline powders that were characterized by x ray diffraction, MicroRaman spectroscopy, scanning electron microscopy (SEM), photoluminescence spectroscopy and UV/Vis diffuse reflectance. They was indexed as alfa and γ-Ag2WO4 by the crystallographic standards JCPDS 34-0061 and 33-1197, respectively. The Rietveld refinament using ICSD No. 4165 was performed to calculation of lattice parameters and atomic positions. The results revealed a high degree of disorder in short, medium and long range which increases with doping such as a progressive reduction of unit cell volume and cubic phase formation is inducted. Except to 0,1% Mo6+, SEM images showed hexagonal crystals, size about 1 μm, presenting morphological defects such as fractures, irregular surfaces and polyfaced crystals. Further was noted a rapid growth of silver nanoparticles on the surface of these materials during exposure to 10 keV electron beam accelerated in SEM. The samples also showed ohmic behavior with 1.074x1010 Ω·m order resistence, α-Ag2WO4 pure crystals exhibited strong photoluminescence in the red region of eletromagnetic spectra which is reduced by doping, with no significant changing on FT profiles by Mo6+ increasing concentration being noted. The lowest band-gap (3.05 eV) was obtained with 0,8% doped sample. / Mestre

Orientador: Elizabeth Berwerth Stucchi / Banca: Regina Célia Galvão Frem Di Nardo / Banca: Sérgio Roberto de Andrade Leite / Banca: Hermi Felinto de Brito / Banca: Petr Melnikov / Resumo: Os objetivos deste trabalho foram a preparação, a caracterização e o estudo da luminescência de alguns complexos de difenilfosfinatos de lantanídeos trivalentes. Os seguintes compostos foram preparados: i) Ln [O2P(Ph)2]3 ou Ln (DFF)3,em que Ln= La, Nd, Eu, Gd e Tb e ii) compostos binários Gdn:Eu1-n (DFF)3.xH2O, em que n varia de 0.99 à 0.5 e x não é determinado . Os difenilfosfinatos de lantanídeos formam pós incolores, cristalinos, insolúveis, química e térmicamente estáveis. Algumas diferenças entre ácido difenilfosfínico e os compostos formados puderam ser reveladas através da espectroscopia vibracional: i) nos espectros de IR, deslocamentos da absorção das ligações P-O para energias menores atestaram a complexação e a comparação entre espectros dos complexos permitiu a atribuição das absorções por volta de 120 cm-1 como sendo um modo de vibração da ligação Ln-O; ii) a diminuição do número de linhas das vibrações P-O observadas nos espectros Raman indicou aumento da simetria em torno do fósforo. Pela análise dos difratogramas de raios-x foi identificado o sistema cristalino triclínico e determinados os parâmetros de cela unitária. Através da técnica de EXAFS foram determinadas as distâncias de ligação Ln-O (R, em Å) e o números de coordenação do metal (NC) dos difenilfosfinatos de Nd, Eu e Tm que são respectivamente : (R /NC) 2,34/7,9 ; 2,34/6,5 e 2,20/7,1. O ácido difenilfosfínico e os difenilfosfinatos de La e Gd apresentam fracas emissões no visível enquanto o composto de Nd emite fracamente na região do infravermelho. Os complexos de Eu e Tb apresentam fortes emissões características quando excitados de 273 nm à 200 nm . Eu(DFF)3 e alguns compostos da série Gd:Eu foram investigados até 100 nm sob radiação de fonte Síncroton...(Resumo completo, clicar acesso eletrônico abaixo) / Abstract: This work reports thepreparation, characterization and of photoluminescence studies of some lanthanide (III) diphenylphosphinate complexes. The following compounds were prepared: i) Ln [O2P(Ph)2]3 or Ln(DPP)3, where Ln= La, Nd, Eu, Gd and Tb ii) binary compounds Gdn:Eu1-n (DPP)3.xH2O, where n ranges from 0.99 to 0.5 and x is uncertain. The lanthanide diphenylphosphinates are colorless, crystalline and insoluble powders, showing thermal and chemical stabilities. Some differences between the diphenylphosphinic acid and the complexes could be revealed through the vibrational spectroscopy: i) in the IR spectra, the shifts to lower energy of the absorption of P-O bond attested the complexation and the comparison among spectra of the complexes allowed the attribution of the absorptions around 120 cm- 1 as a mode of the Ln-O vibration; ii) the decrease of the number of lines P-O vibrations in the Raman spectra indicated increase of the symmetry around the phosphorus. By analysis of the powder X-ray diffractometry was identified the triclinic crystalline system and the unitary cell parameters. Through the technique of EXAFS were determined the Ln-O length (R, in Å) and coordination numbers of the metal (CN) of the diphenylphosphinates of Nd, Eu and Tm that are respectively: (R /NC) 2,34/6,5; 2,34/7,9 and 2,20/7,1. The diphenylphosphinic acid and the La and Gd diphenylphosphinates present weak emissions in the visible range whereas the Nd compound emits weakly in the infrared region. The Eu and Tb complexes exhibit strong characteristic emissions when excited at 273-200 nm range. Eu(DPP)3 and some compounds of the Gd:Eu series exhibited the same behavior when investigation was extended up to 100 nm radiation of Syncroton source. In the binary compounds, the emission...(Complete abstract, click electronic access below) / Doutor

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We have studied luminescence properties of Mg-doped GaN grown by hydride vapor phase epitaxy. Steady state photoluminescence (PL) spectra have been analyzed. Exciton, ultraviolet luminescence (UVL) and blue luminescence (BL) bands are the dominant PL bands in the spectra. At low temperature, Exciton and UVL bands show almost no shift with excitation intensity, whereas the BL band blueshifts by almost 0.4 𝑒𝑉 with increasing excitation intensity by seven orders of magnitude. Such shifting nature of bands with excitation intensity is explained by assuming that the BL band is detected from the region of the sample where potential fluctuations are very large, but the UVL and exciton bands originate from the region of the sample where there are no potential fluctuations. After the careful analysis of potential fluctuations model and the donor-acceptor pair model, we conclude that the BL band in the studied GaN:Mg sample is not a separate band but the UVL band itself, which is significantly distorted by potential fluctuations. Now, we call this band the BL* band. Temperature dependence of the BL*, UVL and Exciton peak intensity is analyzed. We see abrupt and tunable thermal quenching of the BL* and Exciton bands. Temperature dependence of the BL* and UVL bands at fixed excitation intensities but at different environmental conditions is also investigated. Finally, giant redshift of the BL* band with increasing temperature is explained by a combination of potential fluctuations and abrupt quenching of the BL* band with temperature.

Transition metal dichalcogenides (TMDs) have displayed a host of novel physical phenomena, which opens-up promising future applications in electronics, optoelectronics, spintronics and valleytronics. However, the high defect density of 10¹² - 10¹³ cm-² in commercially available TMDs may hinder the observation of their intrinsic properties. In this thesis, the defect density of MoSe₂ and WSe₂ has been reduced by ~10x - 1000x using flux method. The reduced defect denstiy of MoSe₂ and WSe₂ enables to observe optical and electrical properties approaching their intrinsic properties.First of all, photocurrent measurements on the ultra-clean WSe₂ unveil the effect of point defects on photo-response. Substantial improvement of AC photocurrent in the ultra-clean WSe2 indicates that free carriers are likely to non-radiatively decay at atomic defects at room temperature. Then, time-resolved photoluminescence measurements on the ultra-clean MoSe₂ samples allow for direct determination of both the intrinsic (radiative) and defect-dependent (non-radiative) lifetimes of trions. In the cleanest MoSe₂, the trion quantum yield approaches unity. The long lifetime of 230 ps of trions allows direct observation of their diffusion, conclusively demonstrating that trions are free particles. Both the long radiative and non-radiative lifetime of trions can be attributed to Pauli blocking effects. Morover, transport measurements of ultra-clean WSe2 provide Hall mobility exceeding 10,000 cm²V-¹s-¹ and long mean free path over 200 nm, which are nearly three times higher than those in previous study. This improved mobility and mean free path in the ultra-clean WSe₂ indicate that the electrical properties have been limited by defect scattering. Finally, WSe₂ has been a decent platform to generate single photon emitters. However, the microscopic origin of the single photon emitter has been debated. From power- and gate-dependent photoluminescence of ultra-clean WSe₂, emerging defect bound excitons are observed, which is likely formed from the interaction between donor defects and excitons.

Rapidly expanding research in nanotechnology has led to exciting progress in a versatile array of applications from medical diagnostics to catalysis. This success resulted from the manipulation of the desired properties of nanomaterials by controlling their size, shape, and composition. Among the most thriving areas of research about nanoparticle is the synthesis and doping of the ligand-protected atomically-precise metal nanoclusters. In this thesis, we developed three different novel metal nanoclusters, such as doped Ag29 with five gold (Au) atoms leading to enhance its quantum yield with remarkable stability. We also developed half-doped (alloyed) cluster of Ni6 nanocluster with molybdenum (Mo). This enabled enhanced stability and better catalytic activity. The third metal nanocluster that we synthesized was Au28 nanocluster by using di-thiolate as the ligand stabilizer instead of mono-thiolate. The new metal clusters obtained have been characterized by spectroscopic, electrochemical and crystallographic methods.

Silicon is an essential element in today’s modern world. Nanostructured Si is a more recently studied variant, which has currently garnered much attention. When its spatial dimensions are confined below a certain limit, its optical properties change dramatically. It transforms from an indirect bandgap material that does not absorb or emit light efficiently into one which can emit visible light at room temperatures. Although much work has been conducted in understanding the properties of nanostructured Si, in particular porous Si surfaces, a clear understanding of the origin of photoluminescence has not yet been produced. Typical synthesis approaches used to produce nanostructured Si, in particular porous Si and nanocrystalline Si have involved complex preparations used at high temperatures, pressures, or currents. The purpose of this thesis is to develop an easier synthesis approach to produce nanostructured Si as well as arrive at a clearer understanding of the origin of photoluminescence in these systems. We used a simple chemical etching technique followed by sonication to produce nanostructured Si suspensions. The etching process involved producing pores on the surface of a Si substrate in a solution containing hydrofluoric acid and an oxidant. Nanocrystalline Si as well as nanoscale amorphous porous Si suspensions were successfully synthesized using this process. We probed into the phase, composition, and origin of photoluminescence in these materials, through the use of several characterization techniques. TEM and SEM were used to determine morphology and phase. FT-IR and XPS were employed to study chemical compositions, and steady state and time resolved optical spectroscopy techniques were applied to resolve their photoluminescent properties. Our work has revealed that the type of oxidant utilized during etching had a significant impact on the final product. When using nitric acid as the oxidant, we formed nanocrystalline Si suspensions composed of particles with a crystal structure different than the common polymorph of Si. These particles emitted UV to blue wavelengths. Iron(III) chloride was also employed as an oxidant, and it created amorphous Si nanostructures from a bulk crystalline Si source. These suspensions showed ultra-bright visible photoluminescence, which could be tuned through engineering the surface.

III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of the substrate developed as a part of this study yields better current and heat characteristics, while its transparency ensures high light extraction. The straightforward and direct growth process employed does not require a high-cost complex fabrication process. Finally, a broadband photodetector composed of the emerging CH3NH3PbI3 perovskite with the p-GaN, is developed. The findings reported in this dissertation demonstrate the superior performance of CH3NH3PbI3/GaN photodetectors produced by simple and cost-effective solution processed spray-coating method. In particular, it is demonstrated that perovskite/GaN device can work as a self-powered photodetector.

True-green wavelength emitters at 555 nm are currently dominated by III-V semiconductor-based inorganic materials. Nevertheless, due to high lattice- and thermal-mismatch, the overall power efficiency in this range tends to decline for high current density showing the so-called efficiency droop in the green region (“green gap”). In order to fill the research green gap, this thesis examines the low cost solution-processability of organometal halide perovskites, which presents a unique opportunity for light-emitting devices in the green-yellow region owing to their superior photophysic properties such as high photoluminescence quantum efficiency, small capture cross section of defect states as well as optical bandgap tunability across the visible light regime. Specifically, the mechanisms of radiative recombination in a CH3NH3PbBr3 hybrid perovskite material were investigated using low-temperature, power-dependent (77 K), temperature-dependent photoluminescence (PL) measurements. We noted three recombination peaks at 77K, one of which originated from bulk defect states, and other two from surface defect states. The latter were identified as bound-excitonic (BE) radiative transitions related to particle size inhomogeneity or grain size induced surface state in the sample. Both transitions led to PL spectra broadening as a result of concurrent blue- and red-shifts of these excitonic peaks. The blue-shift is most likely due to the Burstein-Moss (band filling) effect. Interestingly, the red-shift of the second excitonic peak becomes pronounced with increasing temperature leading to a true-green wavelength of 553 nm for CH3NH3PbBr3. On the other hand, red-shifted peak originates from the strong absorption in the second excitonic peak owed to the high density of surface states and carrier filling of these states due to the excitation from the first excitonic recombination. We also achieved amplified spontaneous emission around excitation threshold energy of 350 μJ/cm2 when optically pumped using 475 nm laser pulses, thus supporting the assignment of carrier absorption and re-excitation mentioned above. This dissertation work led to the following article: D. Priante, I. Dursun, M. S. Alias, D. Shi, V. A. Melnikov, T. K. Ng, O. F. Mohammed, O. M. Bakr, and B. S. Ooi, "The recombination mechanisms leading to amplified spontaneous emission at the true-green wavelength in CH3NH3PbBr3 perovskites", Applied Physics Letters, 106, 081902, 2015. DOI: 10.1063/1.4913463