Sixty years after the works of Wigner and Dyson, Random Matrix Theory still remains a very active and challenging area of research, with countless applications in mathematical physics, statistical mechanics and beyond. In this thesis, we focus on rotationally invariant models where the requirement of independence of matrix elements is dropped. Some classical examples are the Jacobi and Wishart-Laguerre (or chiral) ensembles, which constitute the core of the present work. The Wishart-Laguerre ensemble contains covariance matrices of random data, and represents a very important tool in multivariate data analysis, with recent applications to finance and telecommunications. We will first consider large deviations of the maximum eigenvalue, providing new analytical results for its large N behavior, and then a power-law deformation of the classical Wishart-Laguerre ensemble, with possible applications to covariance matrices of financial data. For the Jacobi matrices, which arise naturally in the quantum conductance problem, we provide analytical formulas for quantities of interest for the experiments.

A mechanically controllable break junction setup was designed, constructed and characterized. The mechanically controllable break junction technique is commonly used for measurement of quantum conductance of metals and single molecule conductance. The technique relies on resistance to external vibrations disrupting the atomic or molecular junctions formed and should be in a low electronic noise environment. Through a series of experiments the setup was found to have high mechanical stability and low electronic noise. The quantum conductance of gold was measured repeatedly and a histogram was plotted showing good agreement with the literature. The results indicate that with modifications, the setup can be used to measure the conductance of single molecule junctions and single molecule thermoelectric properties.

A self-terminated electrochemical method was used to fabricate microscopic-scale contacts between two Au electrodes in a microfluidic channel. The conductance of contacts varies in a stepwise fashion showing quantization near the integer multiples of the conductance quantum ( ). The mechanism works by a pressure-driven flow parallel to a pair of Au electrodes with a gap on the order of micron in an electrolyte of HCl. When applying a bias voltage between two electrodes, metal atoms are etched off the anode and dissolved into the electrolyte as metal ions, which are then deposited onto the cathode. Consequently, the gap decreases to the atomic scale and then completely closes as the two electrodes form a contact. The electrochemical fabrication approach introduces large variance in the formation and location of individual junctions. Understanding and controlling this process will enable the precise positioning of reproducible geometries into nano-electronic devices.

The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the stability and capability of the formed contact.

Resistive random access memory (RRAM), based on a two-terminal resistive switching device with a switching element sandwiched between two electrodes, has been an attractive candidate to replace flash memory owing to its simple structure, excellent scaling potential, low power consumption, high switching speed, and good retention and endurance properties. However, due to the current limited understanding of the device mechanism, RRAMs research are still facing several issues and challenges including instability of operation parameters, the relatively high reset current, the limited retention and the unsatisfactory endurance. In this study, we investigated the switching mechanisms, conditions and applications of oxygen vacancy (Vo) filament formation in resistive memories. By studying the behavior of conductive Vo nanofilaments in several metal/oxide/metal resistive devices of various thicknesses of oxides, a resulting model supported by the data postulates that there are two distinct modes of creating oxygen vacancies: i) a conventional bulk mode creation, and ii) surface mode of creating oxygen vacancies at the active metal-dielectric interface. A further investigation of conduction mechanism for the Vo CF only based memories is conducted through insertion of a thin layer of titanium into a Pt/ Ta2O5/Pt structure to form a Pt/Ti/ Ta2O5/Pt device. A space charge limited (SCL) conduction model is used to explain the experimental data regarding SET process at low voltage ranges. The evidence for existence of composite copper/oxygen vacancy nanofilaments is presented. The innovative use of hybrid Vo/Cu nanofilament will potentially overcome high forming voltage and gas accumulation issues. A resistive floating electrode device (RFED) is designed to allow the generation of current/voltage pulses that can be controlled by three independent technology parameters. Our recent research has demonstrated that in a Cu/TaOx/Pt resistive device multiple Cu conductive nanofilaments can be formed and ruptured successively. Near the end of the study, quantized and partial quantized conductance is observed at room temperature in metal-insulator-metal structures with graphene submicron-sized nanoplatelets embedded in a 3-hexylthiophene (P3HT) polymer layer. As an organic memory, the device exhibits reliable memory operation with an ON/OFF ratio of more than 10. / Ph. D.

Orientador: Daniel Mario Ugarte / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-16T08:26:46Z (GMT). No. of bitstreams: 1 LagosParedes_MaureenJoel_D.pdf: 15612188 bytes, checksum: 76b816022716e5ae1bb5de0ff150c8ca (MD5) Previous issue date: 2010 / Resumo: Fios metálicos de tamanho atômico (NF's) apresentam novos efeitos químicos e físicos devido ao seu tamanho reduzido, onde pode-se destacar a condutância quântica. NF's são usualmente gerados através de um procedimento simples: duas superfícies metálicas são colocadas em contato e depois afastadas. Nos últimos estágios do estiramento antes da ruptura, um fio de alguns átomos de diâmetro é gerado enquanto a condutância é medida. Este tipo de abordagem apresenta um cenário que permite o estudo da condutância e do processo de deformação mecânica do NF. O objetivo desta tese consiste no estudo dos efeitos do arranjo atômico na condutância quântica e deformação mecânica de NF's gerados por alongamento. O arranjo atômico dos NF's foi estudado por microscopia eletrônica de transmissão de alta resolução resolvida no tempo. A condutância foi medida utilizando um sistema de quebra controlada de junções operado em ultra alto vácuo. Os experimentos foram realizados a ~ 150 K e 300 K. Neste trabalho de tese NF's de diversos tipos de morfologia, tamanho e composição química foram estudados. O estudo do efeito do arranjo atômico no processo de deformação mecânica foi realizado, principalmente, em nanotarugos (NR's) de ouro de ~ 1 nm de diâmetro. Foi verificado que a temperatura modifica drasticamente o comportamento mecânico dos NR's. Também, foi mostrado que o tamanho e a forma do NR sob deformação têm um papel determinante no processo de deformação mecânica. Além disso, foi realizado o estudo detalhado da formação de uma estrutura anômala que consiste em um nanotubo de seção transversal quadrada. Isto mostra a importância de considerar os efeitos de superfície no arranjo atômico de NF's sob deformação. O estudo da influência do arranjo atômico na deformação mecânica de NF's de ligas de ouro e cobre também foi realizada, onde foram observados eventos de segregação na escala atômica, devido a efeitos de superfície, e variações significativas no comportamento mecânico em relação a NF's puros. A origem na formação de distâncias anômalas em cadeias suspensas de ouro também foi analisada. Os resultados obtidos indicam que o carbono é o agente contaminante que induz a formação de distancias 3.2 Å. Finalmente, estudos dos efeitos do arranjo atômico na condutância de NF's de ouro e prata em função da temperatura foram realizados. Os resultados experimentais mostraram que a temperatura modifica significativamente o comportamento estrutural dos NF's formando defeitos estruturais a baixas temperaturas. As medidas de condutância a ~ 150 K também mostraram variações significativas. A partir da informação estrutural de microscopia, modelos geométricos foram estabelecidos para correlacionar a informação de condutância com o arranjo atômico através de cálculos teóricos de condutância / Abstract: Atomic-size metallic nanowires (NWs) display new physical and chemical effects, for example the quantum conductance. NWs can be usually generated by means of a simple experimental procedure: two metallic surfaces are put into contact and then they are retracted in a controlled way. During the last stages before the rupture, a wire containing a few atoms is created and its conductance can be measured simultaneously during the elongation process. This approach represents a scenario which allows us to study its conductance and mechanical properties. This thesis aims to study the thermal energy effects on NW's atomic arrangement and the corresponding influence on quantum conductance and mechanical deformation. The atomic arrangement was studied using time-resolved high resolution transmission electron microscopy. The conductance was measured using an experimental technique called mechanically controllable break junctions. Experiments were performed at ~ 150 K and 300 K. In this work were studied NW's that exhibit different morphologies, sizes and chemical composition. Firstly, the study of the atomic arrangement influence on the mechanical deformation was developed on one-nm wide gold nanorods (NRs). It was found that temperature induces drastic changes in the NR mechanical behavior. Moreover, it was shown that the NR size and shape play an essential role during the process of mechanical deformation. Second, the detailed study of the formation of anomalous silver square-cross section nanotube was performed. This revealed the strong influence of surface effects on atomic arrangement. Third, the study of atomistic aspects associated with mechanical deformation of gold-copper alloy NWs was also developed. Segregation events at atomic scale, induced by surface effects, and significant variations of the nanoalloy mechanical behavior were observed. Fourth, the analysis of the origin of formation of anomalous interatomic distances in suspended gold atom chains was performed. Our results indicate that carbon represents the most probable contaminant which induces the generation of anomalous distances (3.2 Å). Finally, the study of the atomic arrangement effects on conductance of gold and silver NWs as function of temperature was developed. Our experimental results revealed that thermal energy induces drastic changes of structural behavior, generating planar defects at low temperatures. Conductance measurements obtained at ~150 K also display significant variations. Considering structural information derived from microscopy observations, simple geometric models were defined and the conductance was calculated theoretically in order to correlate the gold and silver NW conductance and structural information / Doutorado / Física da Matéria Condensada / Doutor em Ciências

<div>In this work, we investigate the trade-off between scalability and reliability for next generation logic-transistors i.e. Gate-All-Around (GAA)-FET, Multi-Bridge-Channel (MBC)-FET. First, we analyze the electronic properties (i.e. bandgap and</div><div>quantum conductance) of ultra-thin silicon (Si) channel i.e. nano-wire and nano-sheet based on first principle simulation. In addition, we study the influence of interface</div><div>states (or dangling bonds) at Si-SiO₂ interface. Second, we investigate the impact of bandgap change and interface states on GAA-FETs and MBC-FETs characteristics by</div><div>employing Non-equilibrium Green's Function based device simulation. In addition to that, we calculate the activation energy of Si-H bond dissociation at Si-SiO₂ interface for different Si nano-wire/sheet thickness and different oxide electric-field. Utilizing these thickness dependent activation energies for corresponding oxide electric-field, in conjunction with reaction-diffusion model, we compute the characteristics shift and analyze the negative bias temperature instability in GAA-FET and MBC-FET. Based on our analysis, we estimate the operational voltage of these transistors for a life-time of 10 years and the ON current of the device at iso-OFF-current condition. For example, for channel length of 5 nm and thickness < 5 nm the safe operating voltage needs to be < 0.55V. Furthermore, our analysis suggests that the benefit of Si thickness scaling can potentially be suppressed for obtaining a desired life-time of GAA-FET and MBC-FET.</div>

Синтезированы мемристорные сэндвич-структуры Zr/ZrO2-nt/Au диаметром 140 мкм на основе нанотубулярного слоя диоксида циркония толщиной 1.7 мкм и внутренним диаметром нанотрубок 55 нм. Проведена аттестация образцов методами сканирующей электронной и конфокальной микроскопии. Исследованы вольт-амперные характеристики полученных устройств в статическом и импульсном режимах резистивного переключения. Определены параметры резистивного переключения. Установлены механизмы проводимости, доминирующие в различных состояниях структуры. Продемонстрирована возможность формирования квантовых филаментов, состоящих из кислородных вакансий, в оксидном слое. Показана перспективность применения данных структур в качестве мемристорных элементов памяти. / Memristor Zr/ZrO2-nt/Au structure based on the zirconium oxide nanotubular layer with the thickness of 1.7 μm and the nanotubes inner diameter of 55 nm was synthesized. Attestation of the samples was performed with the methods of scanning electron and confocal microscopy. Current-voltage curves of the fabricated devices in static and pulsed modes of resistance switching were studied. Conduction mechanisms that dominate in different structure states were established. The formation of quantum filaments which consist of oxygen vacancies was shown to be possible in the oxide layer. The perspective of using these structures as memristor memory elements was shown.