Made available in DSpace on 2016-03-15T19:36:49Z (GMT). No. of bitstreams: 0 Previous issue date: 2015-04-17 / The different methods of obtaining two-dimensional materials are being researched intensively, due to their promising physical and chemical properties. Among the methods of obtaining graphene, the liquid phase exfoliation (LPE) of graphite is proving to be a relatively simple and efficient process for the production of flakes of high quality and large scale. It is primarily based on the separation of the layers of graphite in liquids, such as common organic solvents and aqueous surfactant solutions. In this work the exfoliation of graphite was performed in liquid phase by sonication in aqueous suspension in the presence of an industrial reagent. A comparison with suspensions not using the polymeric surfactant indicates that its presence is necessary, because it prevents the re-agglomeration of the layers after sonication, through the multipolar and electrostatic repulsion mechanism. This result coincides with the reports of most recent works on liquid-phase exfoliation of graphite. / Os diferentes métodos de obtenção de materiais bidimensionais estão sendo pesquisados intensamente, devido a suas promissoras propriedades físicas e químicas. Entre os métodos de obtenção de grafeno, a esfoliação em fase líquida (LPE) de grafite está demonstrando ser um processo relativamente simples e eficaz de produção de flocos de alta qualidade e em larga escala. Ela se baseia principalmente na separação das camadas de grafite em líquidos, tais como solventes orgânicos comuns e soluções surfactantes aquosas. Neste trabalho foi realizada a esfoliação de grafite em fase líquida através da sonificação em suspensão aquosa em presença um reagente industrial. A comparação com resultados usando suspensões sem o agente surfactante polimérico indica que a presença deste é necessária, pois evita a reaglomeração das camadas após a sonificação, através do mecanismo de multipolo e repulsão eletrostática. Este resultado coincide com os reportes dos trabalhos mais recentes realizados sobre esfoliação em fase líquida de grafite.

Made available in DSpace on 2016-08-18T18:19:28Z (GMT). No. of bitstreams: 1 Katiane Pereira da Silva.pdf: 8268889 bytes, checksum: fe86169cbfe78ea0598321da785e9b93 (MD5) Previous issue date: 2010-07-23 / FUNDAÇÃO DE AMPARO À PESQUISA E AO DESENVOLVIMENTO CIENTIFICO E TECNOLÓGICO DO MARANHÃO / The compounds Cs4W11O35 (CW) and Rb4W11O35 (RW) belong to the class of hexagonal bronzes whose structure originates from KxWO3 superconductor hexatungstate. Charge imbalanced tungsten bronzes are dielectric materials with rich polymorphism, ferroelectric properties and second harmonic generation. In this work we report polarized Raman spectra results for both CW and RW as well as results of high pressure Raman scattering experiments (0.0 11.0 GPa) for Cs4W11O35 system, for which we have observed two structural phase transitions at about 4 GPa and 7.5 GPa. We discuss these transformations and polarized Raman spectra, on basis on lattice dynamics calculation in the related system KNbW2O9. Polarized Raman spectra provide strong indicative that the highest wavenumber modes observed in these systems originates from tungsten or oxygen vacancies. The observation of a soft-like mode indicates that the observed phase transitions exhibit a displacive type behavior, thus further indicating that these transformations are likely related to reorientations of octahedral units. The soft mode nature is discussed as well. Additional, measurement of temperature dependent Raman spectra shows that the structure of CW is stable op to 800 K. Low temperature measurements reveal the existence of a new phase below 190 K. Temperature transformation lead the structure to a higher symmetric phase below 190 K. / Os compostos Cs4W11O35 e Rb4W11O35 pertencem à classe dos bronzes hexagonais cuja estrutura deriva do hexatungstato supercondutor KxWO3. Os bronzes hexagonais são materiais dielétricos com rico polimorfismo, apresentam propriedades ferroelétricas e Geração de Segundo Harmônico. Neste trabalho relatamos resultados de espectros Raman polarizado para ambos os sistemas e resultados de experimentos de espalhamento Raman em altas pressões (com faixa de pressão de 0,0 11 GPa) no sistema Cs4W11O35, para o qual observamos no mínimo duas transições de fase estrutural em aproximadamente, 4 GPa e 7,5 GPa. Discutimos estas transformações, assim como os espectros Raman polarizados destes materiais, com base em cálculo clássico de dinâmica de rede no sistema KNbW2O9, que possui estrutura similar à dos materiais em estudo. Os espectros Raman polarizado fornecem forte indicativos de que os modos de vibração de número de onda mais alto observados nestes sistemas são originados de vacâncias de tungstênio (W) ou de oxigênio (O). Nos resultados de espectroscopia Raman, observamos o aparecimento de modos do tipo soft, indicando que pelo menos umas das transições de fases estruturais observadas apresentam comportamento do tipo deslocamento, o que, além disso, indica que estas transformações são relacionadas provavelmente a reorientações dos octaedros. As comparações da dependência dos modos do tipo soft com a pressão nos materiais contendo Cs e Rb revelam que os raios iônicos influenciam no comportamento soft destes modos. Os estudos do tungstato de césio pra altas temperaturas mostraram que a estrutura deste material é extremamente estável para altas temperaturas. Já para baixas temperaturas foi observada em torno de 190 K uma transição de fase relacionada a fortes modificações na estrutura.

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PVD hard ceramic coatings grown via the combined cathodic arc/unbalance magnetron deposition process were studied using Raman microscopy. Characteristic spectra from binary, multicomponent, multilayered and superlattice coatings were acquired to gain knowledge of the solid-state physics associated with Raman scattering from polycrystalline PVD coatings and to compile a comprehensive spectral database. Defect-induced first order scattering mechanisms were observed which gave rise to two pronounced groups of bands related to the acoustical (150-300cm[-1]) and optical (400-750cm[-1]) parts of the phonon spectrum. Evidence was gathered to support the theory that the optic modes were mainly due to the vibrations of the lighter elements and the acoustic modes due to the vibrations of the heavier elements within the lattice. A study into the deformation and disordering on the Raman spectral bands of PVD coatings was performed. TiAIN and TiZrN coatings were intentionally damaged via scratching methods. These scratches were then analysed by Raman mapping, both across and along, and a detailed spectral interpretation performed. Band broadening occurred which was related to "phonon relaxation mechanisms" as a direct result of the breaking up of coating grains resulting in a larger proportion of grain boundaries per-unit-volume. A direct correlation of the amount of damage with band width was observed. Band shifts were also found to occur which were due to the stresses caused by the scratching process. These shifts were found to be the largest at the edges of scratches. The Raman mapping of "droplets", a defect inherent to PVD deposition processes, found that higher compressive stresses and large amounts of disorder occurred for coating growth onto droplets. Strategies designed to evaluate the ability of Raman microscopy to monitor the extent of real wear on cutting tools were evaluated. The removal of a coating layer and subsequent detection of a base layer proved successful. This was then expanded to real wear situations in which tools were monitored after 3,6,12,64,120 and 130 minutes-in-cut. A PCA chemometrics model able to distinguish between component layers and oxides was developed. Raman microscopy was found to provide structural and compositional information on oxide scales formed on the surfaces of heat-treated coatings. Wear debris, generated as a consequence of sliding wear tests on various coatings, was also found to be primarily oxide products. The comparison of the oxide types within the debris to those formed on the surface of the same coating statically oxidised, facilitated a contact temperature during sliding to be estimated. Raman microscopy, owing to the piezo-spectroscopic effect, is sensitive to stress levels. The application of Raman microscopy for the determination of residual compressive stresses within PVD coatings was evaluated. TiAlN/VN superlattice coatings with engineered stresses ranging -3 to -11.3 GPa were deposited onto SS and HSS substrates. Subsequent Raman measurements found a correlation coefficient of 0.996 between Raman band position and stress (determined via XRD methods). In addition, there was also a similar correlation coefficient observed between hardness and Raman shift (cm-1). The application of mechanical stresses on a TiAlCrN coating via a stress rig was investigated and tensile and compressive shifts were observed.

Hydrocarbon chains are a basic component in a number of systems as diverse as biological membranes, phospholipids and polymers. A better understanding of the physical properties of n-alkane chains should provide a better understanding of these more complex systems. With this aim, vibrational spectroscopy has been extensively used. This technique, sensitive to molecular details, is the only one able to both identify and quantify conformational disorder present in paraffinic systems. To achieve this, methyl deformations have been widely used as "internal standards" for the normalisation of peak areas. However, in the case of n-alkanes with short chain length, such as n-C[44]H[90] for example, the infrared spectra recorded at liquid nitrogen temperature and reported here show the sensitivity of these latter peaks to the various crystal structures formed. Indeed, the main frequencies of the symmetric methyl bending mode were found between 1384 cm[-1] and 1368 cm[-1] as a function of the crystal form. Changes in the frequency of the first order of the L.A.M. present in the Raman spectra were also observed. At higher temperatures, non all-trans conformers, inferred from different infrared bands present in the wagging mode region, were found to be essentially placed at the end of the n-alkane chains. At the monoclinic phase transition, the concentration of end-gauche conformers, proportional to the area of the infrared band at 1342 cm[-1], increases abruptly. On the contrary, in the spectra recorded at liquid nitrogen temperature no such band is observed. We also studied the degree of disorder in two purely monodisperse long chain n-alkanes, namely n-C[198]H[398] and n-C[246]H[494]. The chain conformation as well as the tilt angle of the chains from the crystal surfaces were determined by means of low frequency Raman spectroscopy and S.A.X.S. measurements on solution-crystallised samples. The increase in the number of end-gauche conformers which was expected to occur with the increase of the tilt angle as a function of the temperature was not detected due to a perfecting of the crystals. Indeed, due to successive heating and cooling to -173°C, the concentration of non all-trans conformers was found to decrease within the crystals. Their numbers were found to be up to six times higher in n-C[198]H[398] crystallised in once folded form than when crystallised in extended form. The C-C stretching mode region of the spectra was used to identify the chain conformation and to estimate the length of the all-trans stem passing through the crystal layers at -173°C. The transition between once folded and extended form crystals was indicated by the presence of additional bands in this region at 1089 cm[-1], 1078 cm[-1] and 1064 cm[-1]. Some of those bands may be related to the fold itself. At the same time, a strong decrease of the intensity of the infrared bands present in the wagging mode region was observed. Finally, the triple layered structure proposed on the basis of X-ray measurements obtained from the crystals of a binary mixture of long chain n-alkanes, namely n-C[162]H[326] and n-C[246]H[494], was confirmed from the study of the C-C stretching mode region of the infrared spectra.

CASTRO, Manuela Oliveira de. Síntese de grafeno pelo método CVD. 2011. 84 f. Dissertação (Mestrado em Física) - Programa de Pós-Graduação em Física, Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2011. / Submitted by Edvander Pires (edvanderpires@gmail.com) on 2014-11-13T20:03:00Z No. of bitstreams: 1 2011_dis_mocastro.pdf: 3411512 bytes, checksum: 64f6579c926c263cd9391dfb058954bb (MD5) / Approved for entry into archive by Edvander Pires(edvanderpires@gmail.com) on 2014-11-13T20:35:29Z (GMT) No. of bitstreams: 1 2011_dis_mocastro.pdf: 3411512 bytes, checksum: 64f6579c926c263cd9391dfb058954bb (MD5) / Made available in DSpace on 2014-11-13T20:35:29Z (GMT). No. of bitstreams: 1 2011_dis_mocastro.pdf: 3411512 bytes, checksum: 64f6579c926c263cd9391dfb058954bb (MD5) Previous issue date: 2011 / The advancement and improvement of synthesis techniques and handling of materials are fundamental to understand their properties and possible forms of production and use. However, in the case of nanomaterials, problems such as structural defects, high cost and difficulty of achieving production on a large scale have yet to be solved. Inserted in this panorama is graphene, a two-dimensional nanomaterial whose morphology, consisting of carbon atoms arranged in hexagonal form, is responsible for unprecedented properties that have revolutionary relevance for both basic and applied research. There are different methods of synthesis of graphene. The method of Chemical Vapor Deposition (CVD) is among the most advantageous ones. This method consists in breaking the bonds of the molecules of a gas subjected to high temperatures so that the atoms from the gas are deposited on a given substrate. In this work, we used the CVD method for the synthesis of graphene on oxidized silicon substrates (Si/SiO2) coated with a 500 nm thick film of nickel (Ni), which served as the catalyst. Methane gas (CH4) was used as the source of the carbon atoms and the synthesis was carried out using different sets of parameters. Experiments were performed, firstly, using parameters es-tablished in the literature and the results were compared with those obtained by other authors. The influence of the synthesis parameters and the characteristics of the films of Ni catalysts on the properties of the graphene films was studied. The samples were characterized using Scanning Electron Microscopy, Confocal Raman and Optical Microscopy, and Atomic Force Microscopy. In agreement with results from the literature, it could be observed that thin films are synthesized and they are composed of graphitic flakes with a non-uniform thickness, which is strongly dependent of the morphology of catalyst film. Larger regions with characteristic Raman spectra of monolayer and few layer graphene could be obtained by combining thermal treatment of Ni film during the sputtering process with low gas flow and time of exposure to CH4 in the CVD experiment. Variations in the Raman spectra of the flakes could be observed, including the emergence of the D-band and the displacement of the peaks. These variations, which reveal the influence of substrates on the synthesized films, were more intense the smaller the number of graphene layers. Next, we combined methods reported in the literature for estimating the number of layers on the basis of the characteristics of the Raman spectra with AFM analysis to obtain the thickness of the graphene layer. The results obtained from our analysis show that monolayer graphene could be successfully synthesized in the experiments. / O avanço e o aperfeiçoamento das técnicas de síntese e manipulação de materiais são fundamentais para o entendimento de suas propriedades e das possíveis formas de produção e utilização. Porém, no caso dos nanomateriais, principalmente, cujas extraordinárias capacidades são bastante celebradas, problemas como defeitos estruturais, alto custo de obtenção e dificuldade de produção em larga escala ainda necessitam ser solucionados. Inserido neste panorama está o grafeno, um nanomaterial cuja morfologia bidimensional, constituída por átomos de carbono dispostos de forma hexagonal, é responsável por propriedades sem precedentes que apresentam revolucionária relevância, tanto para a pesquisa básica quanto para a pesquisa aplicada. Neste sentido, existem diferentes métodos de síntese de grafeno, estando entre os mais vantajosos o método de deposição química em fase de vapor (Chemical Vapor Deposition - CVD). Este método consiste na quebra das ligações das moléculas de um gás submetido a altas temperaturas de modo que os átomos provenientes do gás sejam depositados sobre um determinado substrato. Neste trabalho, utilizou-se o método CVD para a síntese de grafeno sobre substratos de silício oxidado (Si/SiO2) recobertos por filmes de níquel (Ni) com, aproximadamente, 500nm de espessura, os quais funcionaram como catalisadores. O gás metano (CH4) foi utilizado como a fonte dos átomos de carbono depositados e os processos de síntese tiveram diferentes conjuntos de parâmetros executados. A síntese de grafeno pelo método CVD teve como objetivo geral verificar os resultados divulgados na literatura e aperfeiçoá-los, relacionando os parâmetros utilizados nas sínteses e as características dos filmes de Ni catalisadores com aquelas apresentadas pelos filmes de grafeno obtidos nos experimentos. As amostras foram caracterizadas por meio de Microscopia Eletrônica de Varredura, Microscopia Óptica e Raman Confocal e Microscopia de Força Atômica. Em consistência com os resultados publicados na literatura, observou-se que são sintetizados filmes finos compostos por flakes de material grafítico com espessura não uniforme, e que a obtenção de filmes mais uniformes é fortemente dependente da morfologia do filme catalisador. Regiões apresentando espectro Raman característico de monocamadas de grafeno e de grafeno de poucas camadas foram maiores quando combinados o tratamento térmico do filme de Ni com o baixo fluxo e menor tempo de exposição ao CH4. Verificaram-se, ainda, variações nos espectros Raman dos flakes. Estas variações apresentaram-se mais intensas, quanto mais reduzido é o número de camadas de grafeno e incluem o aparecimento da banda D, além do deslocamento dos picos, revelando a influência dos substratos sobre os filmes sintetizados. Esta pesquisa considerou métodos de estimativa do número de camadas por características do espectro Raman, divulgados na literatura, aliados à análise da espessura por AFM que mostraram ser possível a síntese de monocamadas de grafeno.

Conselho Nacional de Desenvolvimento CientÃfico e TecnolÃgico / O avanÃo e o aperfeiÃoamento das tÃcnicas de sÃntese e manipulaÃÃo de materiais sÃo fundamentais para o entendimento de suas propriedades e das possÃveis formas de produÃÃo e utilizaÃÃo. PorÃm, no caso dos nanomateriais, principalmente, cujas extraordinÃrias capacidades sÃo bastante celebradas, problemas como defeitos estruturais, alto custo de obtenÃÃo e dificuldade de produÃÃo em larga escala ainda necessitam ser solucionados. Inserido neste panorama està o grafeno, um nanomaterial cuja morfologia bidimensional, constituÃda por Ãtomos de carbono dispostos de forma hexagonal, à responsÃvel por propriedades sem precedentes que apresentam revolucionÃria relevÃncia, tanto para a pesquisa bÃsica quanto para a pesquisa aplicada. Neste sentido, existem diferentes mÃtodos de sÃntese de grafeno, estando entre os mais vantajosos o mÃtodo de deposiÃÃo quÃmica em fase de vapor (Chemical Vapor Deposition - CVD). Este mÃtodo consiste na quebra das ligaÃÃes das molÃculas de um gÃs submetido a altas temperaturas de modo que os Ãtomos provenientes do gÃs sejam depositados sobre um determinado substrato. Neste trabalho, utilizou-se o mÃtodo CVD para a sÃntese de grafeno sobre substratos de silÃcio oxidado (Si/SiO2) recobertos por filmes de nÃquel (Ni) com, aproximadamente, 500nm de espessura, os quais funcionaram como catalisadores. O gÃs metano (CH4) foi utilizado como a fonte dos Ãtomos de carbono depositados e os processos de sÃntese tiveram diferentes conjuntos de parÃmetros executados. A sÃntese de grafeno pelo mÃtodo CVD teve como objetivo geral verificar os resultados divulgados na literatura e aperfeiÃoÃ-los, relacionando os parÃmetros utilizados nas sÃnteses e as caracterÃsticas dos filmes de Ni catalisadores com aquelas apresentadas pelos filmes de grafeno obtidos nos experimentos. As amostras foram caracterizadas por meio de Microscopia EletrÃnica de Varredura, Microscopia Ãptica e Raman Confocal e Microscopia de ForÃa AtÃmica. Em consistÃncia com os resultados publicados na literatura, observou-se que sÃo sintetizados filmes finos compostos por flakes de material grafÃtico com espessura nÃo uniforme, e que a obtenÃÃo de filmes mais uniformes à fortemente dependente da morfologia do filme catalisador. RegiÃes apresentando espectro Raman caracterÃstico de monocamadas de grafeno e de grafeno de poucas camadas foram maiores quando combinados o tratamento tÃrmico do filme de Ni com o baixo fluxo e menor tempo de exposiÃÃo ao CH4. Verificaram-se, ainda, variaÃÃes nos espectros Raman dos flakes. Estas variaÃÃes apresentaram-se mais intensas, quanto mais reduzido à o nÃmero de camadas de grafeno e incluem o aparecimento da banda D, alÃm do deslocamento dos picos, revelando a influÃncia dos substratos sobre os filmes sintetizados. Esta pesquisa considerou mÃtodos de estimativa do nÃmero de camadas por caracterÃsticas do espectro Raman, divulgados na literatura, aliados à anÃlise da espessura por AFM que mostraram ser possÃvel a sÃntese de monocamadas de grafeno. / The advancement and improvement of synthesis techniques and handling of materials are fundamental to understand their properties and possible forms of production and use. However, in the case of nanomaterials, problems such as structural defects, high cost and difficulty of achieving production on a large scale have yet to be solved. Inserted in this panorama is graphene, a two-dimensional nanomaterial whose morphology, consisting of carbon atoms arranged in hexagonal form, is responsible for unprecedented properties that have revolutionary relevance for both basic and applied research. There are different methods of synthesis of graphene. The method of Chemical Vapor Deposition (CVD) is among the most advantageous ones. This method consists in breaking the bonds of the molecules of a gas subjected to high temperatures so that the atoms from the gas are deposited on a given substrate. In this work, we used the CVD method for the synthesis of graphene on oxidized silicon substrates (Si/SiO2) coated with a 500 nm thick film of nickel (Ni), which served as the catalyst. Methane gas (CH4) was used as the source of the carbon atoms and the synthesis was carried out using different sets of parameters. Experiments were performed, firstly, using parameters es-tablished in the literature and the results were compared with those obtained by other authors. The influence of the synthesis parameters and the characteristics of the films of Ni catalysts on the properties of the graphene films was studied. The samples were characterized using Scanning Electron Microscopy, Confocal Raman and Optical Microscopy, and Atomic Force Microscopy. In agreement with results from the literature, it could be observed that thin films are synthesized and they are composed of graphitic flakes with a non-uniform thickness, which is strongly dependent of the morphology of catalyst film. Larger regions with characteristic Raman spectra of monolayer and few layer graphene could be obtained by combining thermal treatment of Ni film during the sputtering process with low gas flow and time of exposure to CH4 in the CVD experiment. Variations in the Raman spectra of the flakes could be observed, including the emergence of the D-band and the displacement of the peaks. These variations, which reveal the influence of substrates on the synthesized films, were more intense the smaller the number of graphene layers. Next, we combined methods reported in the literature for estimating the number of layers on the basis of the characteristics of the Raman spectra with AFM analysis to obtain the thickness of the graphene layer. The results obtained from our analysis show that monolayer graphene could be successfully synthesized in the experiments.

We report a new method for the reduction of noise from spectra. This method is based on casting vectors from one data point to the following data points of the noisy spectrum. The noise‐reduced spectrum is computed from the casted vectors within a margin that is identified by an envelope‐finder algorithm. We compared here the presented method with the Savitzky–Golay and the wavelet transform approaches for noise reduction using simulated Raman spectra of various signal‐to‐noise ratios between 1 and 25 dB and experimentally acquired Raman spectra. The method presented here performs well compared with the Savitzky–Golay and the wavelets‐based denoising method, especially at small signal‐to‐noise ratios and furthermore relies on a minimum of human input requirements.