This work deals with setting of dependability of static electricity meters. The first two chapters deal about electricity meters and dependability in general than there are introduced three possible ways for getting dependability parameters. The first methode is data collection from the field. The second methode is reliability prediction from component's reliability. The third methode is aging life tests. Conclusion contains evaluation of results and highligting of importance for practical usage.

The doctoral thesis deals with reliability (dependability) analyses of operation and testing data of the Airplanes. Requirements of airworthiness regulations on aircraft hydraulic systems (with a focus on US FAR-23 and European CS-23 regulations) are taken into account. Mentioned regulations include requirements for the structural design, design of systems, etc. They cover wide range of airplanes from small sport airplanes to 19-seats transport aircraft. Also options for predictive reliability analyses (resources) and reliability tests are discussed in the doctoral thesis. Practical application is done on small transport airplane (currently in the development). The failure report is designed. Expected major contribution of the work is selection and practical application of the most suitable procedures for safety assessment on the field of aircraft hydraulic systems, with a focus on the small transport aircraft. Also the comparison to different data source is shown.

This work intends to enhance the state of the research in power cycling tests with statements on achievable measurement accuracy, proposed test bench topologies and recommendations on improved test strategies for various types of semiconductor power devices. Chapters 1 and 2 describe the current state of the power cycling tests in the context of design for reliability comprising applicable standards and lifetime models. Measurement methods in power cycling tests for the essential physical parameters are explained in chapter 3. The dynamic and static measurement accuracy of voltage, current and temperature are discussed. The feasibly achievable measurement delay tmd of the maximal junction temperature Tjmax, its consequences on accuracy and methods to extrapolate to the time point of the turn-off event are explained. A method to characterize the thermal path of devices to the heatsink via measurements of the thermal impedance Zth is explained. Test bench topologies starting from standard setups, single to multi leg DC benches are discussed in chapter 4. Three application-closer setups implemented by the author are explained. For tests on thyristors a test concept with truncated sinusoidal current waveforms and online temperature measurement is introduced. An inverter-like topology with actively switching IGBTs is presented. In contrast to standard setups, there the devices under test prove switching capability until reaching the end-of-life criteria. Finally, a high frequency switching topology with low DC-link voltage and switching losses contributing significantly to the overall power losses is presented providing new degrees of freedom for setting test conditions. The particularities of semiconductor power devices in power cycling tests are thematized in chapter 5. The first part describes standard packages and addressed failure mechanisms in power cycling. For all relevant power electronic devices in silicon and silicon carbide, the devices’ characteristics, methods for power cycling and their consequences for test results are explained. The work is concluded and suggestions for future work are given in chapter 6.:Abstract 1 Kurzfassung 3 Acknowledgements 5 Nomenclature 10 Abbreviations 10 Symbols 12 1 Introduction 19 2 Applicable Standards and Lifetime Models 25 3 Measurement parameters in power cycling tests 53 4 Test Bench Topologies 121 5 Semiconductor Power Devices in Power Cycling 158 6 Conclusion and Outlook 229 References 235 List of Publications 253 Theses 257 / Diese Arbeit bereichert den Stand der Wissenschaft auf dem Gebiet von Lastwechseltests mit Beiträgen zu verbesserter Messgenauigkeit, vorgeschlagenen Teststandstopologien und verbesserten Teststrategien für verschiedene Arten von leistungselektronischen Bauelementen. Kurzgefasst der Methodik von Lastwechseltests. Das erste Themengebiet in Kapitel 1 und Kapitel 2 beschreibt den aktuellen Stand zu Lastwechseltests im Kontext von Design für Zuverlässigkeit, welcher in anzuwendenden Standards und publizierten Lebensdauermodellen dokumentiert ist. Messmethoden für relevante physikalische Parameter in Lastwechseltests sind in Kapitel 3. erläutert. Zunächst werden dynamische und statische Messgenauigkeit für Spannung, Strom und Temperaturen diskutiert. Die tatsächlich erreichbare Messverzögerung tMD der maximalen Sperrschichttemperatur Tjmax und deren Auswirkung auf die Messgenauigkeit der Lastwechselfestigkeit wird dargelegt. Danach werden Methoden zur Rückextrapolation zum Zeitpunkt des Abschaltvorgangs des Laststroms diskutiert. Schließlich wird die Charakterisierung des Wärmepfads vom Bauelement zur Wärmesenke mittels Messung der thermischen Impedanz Zth behandelt. In Kapitel 4 werden Teststandstopologien beginnend mit standardmäßig genutzten ein- und mehrsträngigen DC-Testständen vorgestellt. Drei vom Autor umgesetzte anwendungsnahe Topologien werden erklärt. Für Tests mit Thyristoren wird ein Testkonzept mit angeschnittenem sinusförmigem Strom und in situ Messung der Sperrschichttemperatur eingeführt. Eine umrichterähnliche Topologie mit aktiv schaltenden IGBTs wird vorgestellt. Zuletzt wird eine Topologie mit hoch frequent schaltenden Prüflingen an niedriger Gleichspannung bei der Schaltverluste signifikant zur Erwärmung der Prüflinge beitragen vorgestellt. Dies ermöglicht neue Freiheitsgrade um Testbedingungen zu wählen. Die Besonderheiten von leistungselektronischen Bauelementen werden in Kapitel 5 thematisiert. Der erste Teil beschreibt Gehäusetypen und adressierte Fehlermechanismen in Lastwechseltests. Für alle untersuchten Bauelementtypen in Silizium und Siliziumkarbid werden Charakteristiken, empfohlene Methoden für Lastwechseltests und Einflüsse auf Testergebnisse erklärt. Die Arbeit wird in Kapitel 6 zusammengefasst und Vorschläge zu künftigen Arbeiten werden unterbreitet.:Abstract 1 Kurzfassung 3 Acknowledgements 5 Nomenclature 10 Abbreviations 10 Symbols 12 1 Introduction 19 2 Applicable Standards and Lifetime Models 25 3 Measurement parameters in power cycling tests 53 4 Test Bench Topologies 121 5 Semiconductor Power Devices in Power Cycling 158 6 Conclusion and Outlook 229 References 235 List of Publications 253 Theses 257

Board-to-board connectors are used for electrically connecting one printed circuit board to another. In this thesis, a method for assessing the reliability of such connectors will be developed and tested with the goal of determining the reliability of a selection of connectors. Board-to-board connectors are widely used for connecting different electronic modules to each other, forming a modular system. Today, one of the limiting factors when it comes to modularizing electronic systems, is the lack of data on the long-term reliability of board-to-board connectors. The methods detailed in this thesis are meant to enable electronic designers to make informed decisions on connector selection when modularizing electronic systems. Modularization of electronic systems has several advantages, for example an increased first-pass yield (FPY) during assembly, and the ability to modify or replace certain parts of the system without re-spinning the entire thing. The method by which the reliability of connectors will be tested, is to continuously measure the contact resistance of the connectors during a selection of stress tests. The stress tests in question are mechanical vibration tests, thermal cycling tests, and actuation tests, all of which represent conditions that products from Hitachi Energy may be subjected to. There already exist standards on how to measure contact resistance, but those standards are not necessarily scalable to the measurement of thousands of contacts, nor are they made with the expectation that contacts can be measured during stress tests. The methods presented in this report are developed with the existing standards as basis, but have been modified in order to facilitate the measurement of thousands of contacts during stress tests. The results show that there are advantages to continuous monitoring of contact resistances during tests, as behaviors can be observed, which would not have been captured had the tests been performed conventionally. Furthermore the system which was developed forms the groundwork for a more convenient and cost effective method for testing the reliability of a large selection of board-to-board connectors. / Kontaktdon för kort-till-kort-anslutning används för att elektriskt koppla ett kretskort till ett annat. I denna avhandling utvecklas och testas en metod för att bedöma pålitligheten hos sådana anslutningar, med målet att fastställa pålitligheten hos ett urval av existerande kontaktdon. Kontaktdon för anslutning av kretskort till varandra används allmänt för att knyta ihop olika elektroniska moduler till varandra och bilda ett modulärt system. Idag är en av de begränsande faktorerna när det gäller att modularisera elektroniska system, bristen på data för långtidstålighet hos kontaktdon för kort-till-kort-anslutning. De metoder som beskrivs i denna avhandling är avsedda att möjliggöra för elektronikdesigner att fatta korrekta beslut om kontaktdonsval vid modularisering av elektroniska system. Modularisering av elektroniska system har flera fördelar, till exempel en förbättrad “first-pass yield”, FPY, när det gäller montering och möjligheten att modifiera eller ersätta vissa delar av systemet utan att behöva göra om hela systemet. Metoden som här används för att testa pålitligheten hos kontaktdon är att kontinuerligt mäta kontaktresistansen hos kontaktdonen under ett antal stresstester. De aktuella stresstesterna är mekaniska vibrationsprov, termocykeltester och aktiveringstester, vilka alla representerar vanliga situationer som Hitachi Energy’s produkter kan utsättas för. Det finns redan standarder för hur man mäter kontaktresistans, men dessa standarder är ofta inte skalbara till mätningar av tusentals kontakter samtidigt, och de är inte heller utformade för att mäta kontakter under stresstester. De metoder som presenteras i denna rapport är utvecklade med befintliga standarderna som grund, men har modifierats för att underlätta mätning av tusentals kontakter under olika stresstester. Resultaten visar att det finns fördelar med kontinuerlig övervakning av kontaktresistanser under tester, eftersom vissa beteenden kan observeras som inte skulle ha upptäckts om testerna hade utförts på ett konventionellt sätt. Dessutom utgör det system som utvecklades grunden för en mer bekväm och kostnadseffektiv metod för att testa pålitligheten hos ett stort urval av kontaktdon för kort-till-kort-anslutningar.

Monte Carlo simulation techniques have emerged as widely accepted computing tools in tackling many problems in modern structural mechanics. Apart from developments in computational hardware, which have undoubtedly made simulation strategies practically feasible, the success of Monte Carlo simulations has also resulted equally significantly from the methodological developments aimed at controlling sampling variance of the Monte Carlo estimates. The study reported in the present thesis is aimed at developing and validating Monte Carlo simulation based approaches with inbuilt variance reduction capabilities to deal with problems of time variant reliability modeling, random vibration testing, and updating reliability models for statically/dynamically loaded instrumented structures. The relevant literature has been reviewed in Chapter 1. Time variant reliability analysis of randomly parametered and randomly driven non-linear vibrating systems has been tackled by combining two Monte Carlo variance reduction strategies into a single framework (Chapter 2). The first of these strategies is based on the application of the Girsanov transformation to account for the randomness in dynamic excitations and, the second approach is fashioned after the subset simulation method to deal with randomness in system parameters. A novel experimental test procedure to estimate the reliability of structural dynamical systems under excitations specified via random process models has been proposed (Chapter 3). The samples of random excitations to be used in the test are modified by the addition of an artificial control force. An unbiased estimator for the reliability is derived based on measured ensemble of responses under these modified inputs based on the tenets of Girsanov’s transformation. The study observes that an acceptable choice for the control force (that can reduce the sampling variance of the estimator) can be made solely based on experimental techniques. This permits the proposed procedure to be applied in the experimental study of time variant reliability of complex structural systems which are difficult to model mathematically. Illustrative example consists of a multi-axes shake table study on bending-torsion coupled, geometrically non-linear, five-storey frame under uni/bi-axial, non-stationary, random base excitation. The first order reliability method (FORM) and inverse FORM have been extended to handle the problem of updating reliability models for existing, statically loaded structures based on measured responses (Chapter 4). The proposed procedures are implemented by combining Matlab based reliability modules with finite element models residing on the Abaqus software. Numerical illustrations on linear and non-linear frames are presented. A solution strategy within the framework of Monte Carlo simulation based dynamic state estimation method and Girsanov’s transformation for variance reduction has been developed to tackle the problem of updating the reliability of instrumented structures based on measured response under random dynamic loading (Chapter 5). For linear Gaussian state space models, the solution is developed based on continuous version of the Kalman filter, while, for non-linear and (or) non-Gaussian state space models, bootstrap particle filters are adopted. Results from laboratory testing of an archetypal five storey bending-torsion coupled frame under seismic base motions form the basis of one of the illustrative examples. A set of three annexures contain details of numerical methods for discretizing Ito’s differential equations (Annexure 1), working of the Girsanov transformation through Kolmogorov’s equations (Annexure 2) and tools for interfacing Matlab and Abaqus codes (Annexure 3).

Consider life testing of J-component series systems that are subjected to stress levels that are steeper than that at normal usage condition. The objective of performing such life tests, commonly known as Accelerated Life Testing (ALT) in the literature, is to collect observations on system failure times within a limited time frame. The accelerated observations are then used to infer on the component and system reliability metrics at usage stress. In this thesis, the existing literature is first extended by considering the general case of K stress variables, as opposed to the usual consideration of a single stress variable. Next, a general model assuming that the component log-lifetimes belong to an arbitrary location-scale family of distributions, is formulated. The location parameters are assumed to depend on the stress variables through a general stress translation function, while the scale parameters are assumed to be independent of the stress variables. This formulation covers the standard lifetime distributions as well as well-known stress translation functions as special cases. Bayesian methodologies are then developed for four special cases of the proposed general model, viz., exponentials, Weibulls with equal shape parameter, Weibulls with distinct shape parameters and log-normals with distinct scale parameters. For exponential and Weibull models, the priors on lifetime parameters are assumed to be log-concave and independent of each other. The resulting univariate conditional posterior of each lifetime parameter given the rest, is shown to be log-concave. This facilitates Gibbs sampling from the joint posterior of lifetime parameters. Propriety of the joint posteriors with Laplacian uniform priors on stress coefficients are also proved under a suitable set of sufficient conditions. For the log-normal model, the observed data is first augmented with log-lifetimes of un-failed components to form complete data. A Gibbs sampling scheme is then developed to generate observations from the joint posterior of lifetime parameters, through the augmented data and a conjugate prior for the complete data. In all four cases, Bayesian predictive inference techniques are used to study component and system reliability metrics at usage stress. Though this thesis mainly deals with Bayesian inference of accelerated data of series systems, maximum likelihood analysis for the log-normal component lifetimes is also performed via an expectation-maximization (EM) algorithm and bootstrap, which are not available in the literature. The last part of this thesis deals with construction of optimal Bayesian designs for accelerated life tests of J-component series systems under Type-I censoring scheme. Optimal ALT plans for a single stress variable are obtained using two different Bayesian D-optimality criteria for exponentially distributed component lives. A detailed sensitivity analysis is carried out to investigate the effect of different planning inputs on the optimal designs as well.

Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1.7kV voltage range, power devices in SiC are foreseen to replace Si Insulatedgatebipolar transistors (IGBTs) for applications targeting high efficiency,high operation temperatures and/or volume reductions. In particular, theSiC Metal-oxide semiconductor field-effect transistor (MOSFET) – which isvoltage controlled and normally-OFF – is the device of choice due to the easeof its implementation in designs using Si IGBTs.In this work the reliability of SiC devices, in particular that of the SiCMOSFET, has been investigated. First, the possibility of paralleling two discreteSiC MOSFETs is investigated and validated through static and dynamictests. Parallel-connection was found to be unproblematic. Secondly, drifts ofthe threshold voltage and forward voltage of the body diode of the SiC MOSFETare investigated through long-term tests. Also these reliability aspectswere found to be unproblematic. Thirdly, the impact of the package on thechip reliability is discussed through a modeling of the parasitic inductancesof a standard module and the impact of those inductances on the gate oxide.The model shows imbalances in stray inductances and parasitic elementsthat are problematic for high-speed switching. A long-term test on the impactof humidity on junction terminations of SiC MOSFETs dies and SiCSchottky dies encapsulated in the same standard package reveals early degradationfor some modules situated outdoors. Then, the short-circuit behaviorof three different types (bipolar junction transistor, junction field-effect transistor,and MOSFET) of 1.2 kV SiC switching devices is investigated throughexperiments and simulations. The necessity to turn OFF the device quicklyduring a fault is supported with a detailed electro-thermal analysis for eachdevice. Design guidelines towards a rugged and fast short-circuit protectionare derived. For each device, a short-circuit protection driver was designed,built and validated experimentally. The possibility of designing diode-lessconverters with SiC MOSFETs is investigated with focus on surge currenttests through the body diode. The discovered fault mechanism is the triggeringof the npn parasitic bipolar transistor. Finally, a life-cycle cost analysis(LCCA) has been performed revealing that the introduction of SiC MOSFETsin already existing IGBT designs is economically interesting. In fact,the initial investment is saved later on due to a higher efficiency. Moreover,the reliability is improved, which is beneficial from a risk-management pointof-view. The total investment over 20 years is approximately 30 % lower fora converter with SiC MOSFETs although the initial converter cost is 30 %higher. / Kiselkarbid (SiC) är ett bredbandgapsmaterial (WBG) som har flera fördelar,såsom högre maximal elektrisk fältstyrka, lägre ON-state resitans, högreswitch-hastighet och högre maximalt tillåten arbetstemperatur jämförtmed kisel (Si). I spänningsområdet 1,2-1,7 kV förutses att effekthalvledarkomponenteri SiC kommer att ersätta Si Insulated-gate bipolar transistorer(IGBT:er) i tillämpningar där hög verkningsgrad, hög arbetstemperatur ellervolymreduktioner eftersträvas. Förstahandsvalet är en SiC Metal-oxidesemiconductor field-effect transistor (MOSFET) som är spänningsstyrd ochnormally-OFF, egenskaper som möjliggör enkel implementering i konstruktionersom använder Si IGBTer.I detta arbete undersöks tillförlitligheten av SiC komponenter, specielltSiC MOSFET:en. Först undersöks möjligheten att parallellkoppla tvådiskretaSiC MOSFET:ar genom statiska och dynamiska prov. Parallellkopplingbefanns vara oproblematisk. Sedan undersöks drift av tröskelspänning ochbody-diodens framspänning genom långtidsprov. Ocksådessa tillförlitlighetsaspekterbefanns vara oproblematiska. Därefter undersöks kapslingens inverkanpåchip:et genom modellering av parasitiska induktanser hos en standardmoduloch inverkan av dessa induktanser pågate-oxiden. Modellen påvisaren obalans mellan de parasitiska induktanserna, något som kan varaproblematiskt för snabb switchning. Ett långtidstest av inverkan från fuktpåkant-termineringar för SiC-MOSFET:ar och SiC-Schottky-dioder i sammastandardmodul avslöjar tidiga tecken pådegradering för vissa moduler somvarit utomhus. Därefter undersöks kortslutningsbeteende för tre typer (bipolärtransistor,junction-field-effect transistor och MOSFET) av 1.2 kV effekthalvledarswitchargenom experiment och simuleringar. Behovet att stänga avkomponenten snabbt stöds av detaljerade elektrotermiska simuleringar för allatre komponenter. Konstruktionsriktlinjer för ett robust och snabbt kortslutningsskyddtas fram. För var och en av komponenterna byggs en drivkrets medkortslutningsskydd som valideras experimentellt. Möjligheten att konstrueradiodlösa omvandlare med SiC MOSFET:ar undersöks med fokus påstötströmmargenom body-dioden. Den upptäckta felmekanismen är ett oönskat tillslagav den parasitiska npn-transistorn. Slutligen utförs en livscykelanalys(LCCA) som avslöjar att introduktionen av SiC MOSFET:ar i existerandeIGBT-konstruktioner är ekonomiskt intressant. Den initiala investeringensparas in senare pågrund av en högre verkningsgrad. Dessutom förbättrastillförlitligheten, vilket är fördelaktigt ur ett riskhanteringsperspektiv. Dentotala investeringen över 20 år är ungefär 30 % lägre för en omvandlare medSiC MOSFET:ar även om initialkostnaden är 30 % högre. / <p>QC 20170524</p>