Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total mobility is observed to decrease with increased neutron dose and can be fitted by including a mobility inverse proportional to neutron dose. Electron introduction rate of thermal neutron is much smaller than that of fission neutrons. Total recovering of the material is suggested to have longer time annealing. Using Kane's model, we also fitted carrier concentration change at low temperature by introducing a donor level with activation energy changing with temperature. Results on Se diffusion in liquid phase epitaxy (LPE) grown HgCdTe epilayers is reported. The LPE Hg0.78Cd0.22Te samples were implanted with Se of 2.0×1014/cm2 at 100keV and annealed at 350-450oC in mercury saturated vapor. Secondary ions mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit we find that the Se diffusion coefficient DSe is about one to two orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. Assuming a Te vacancy based mechanism, the Arrhenius relationship yields an activation energy 1.84eV. Dislocations introduced in HgCdTe materials result in two energy levels, where one is a donor and one is an acceptor. Hydrogenation treatment can effectively neutralize these dislocation defect levels. Both experimental results and theoretical calculation show that the mobility due to dislocation scattering remains constant in the low temperature range (<77K), and increases with temperature between 77K and 150K. Dislocation scattering has little effect on electrical transport properties of HgCdTe with an EPD lower than 107/cm2. Dislocations may have little effect on carrier concentration for semiconductor material with zinc blende structure due to self compensation.