Le système des nano-colonnes auto-assemblées de GeMn, riches en Mn et entourées d'une matrice de germanium quasi pure, est un matériau prometteur pour la spintronique. Selon les paramètres de croissance, les échantillons contiennent des nano-colonnes de type cohérents sur la matrice de Ge, de type amorphe, ou/et des nano-inclusions de Ge3Mn5. Ce manuscrit présente notre étude des propriétés électroniques, magnétiques et structurales des nano-colonnes de GeMn à l'aide du rayonnement synchrotron. Les mesures de la diffusion et diffraction des rayons X en incidence rasante dans des échantillons contenant des nano-colonnes cohérentes et sans précipités de Ge3Mn5 montrent un certain désordre dans les nano-colonnes. Les cartographies de l'espace réciproque ont pu être quantitativement expliquées en considérant la déformation de la matrice de germanium due à l'inclusion des nano-colonnes dans celle-ci, ainsi que par leurs corrélations de position, sans avoir recours à d'autres phases cristallines. La spectroscopie d'absorption et le dichroïsme circulaire magnétique de rayons X ont permis de sonder spécifiquement les propriétés magnétiques des atomes de Mn dans des échantillons sans précipités de Ge3Mn5. On observe une allure des spectres XAS-XMCD des nano-colonnes très similaire à celle observée dans le cas de Ge3Mn5. Le moment magnétique local sur le manganèse possède une composante orbitale faible mais non-nulle et une amplitude totale (0.8 +/- 0.1 µB) plus faible que celle attendue pour Ge3Mn5 (~2.6 µB) ou pour des atomes de Mn substitutionnels (~3 µB). Ceci indique une origine différente de la phase des nano-colonnes. Les spectres XAS-XMCD ont été calculés pour différentes structures modèles, incluant des défauts simples ainsi de nouvelles phases cristallines, les paramètres critiques des calculs ayant été identifiés. Le meilleur accord est observé pour une nouvelle phase de type Ge2Mn. / The system of self-assembled Mn-rich GeMn nanocolumns embedded in a Mn-poor germanium matrix is a promising material for spintronics applications. Depending on the growth parameters, coherent GeMn nanocolumns, amorphous GeMn nanocolumns and/or Ge3Mn5 nanoclusters can be observed. In this manuscript, we report on the investigation on the electronic, magnetic and structural properties of the GeMn nanocolumns using synchrotron techniques. Measurements using grazing incidence x-ray scattering techniques in samples containing coherent nanocolumns, free from Ge3Mn5 precipitates, show some disorder in the nanocolumns. Reciprocal space maps are quantitatively explained by considering the scattering of the Ge matrix strained by the inclusion of the nanocolumns in the matrix and their correlations in position, without requiring the consideration of different additional phases. X-ray absorption spectroscopy and x-ray magnetic circular dichroism allow for the specific probing of the Mn magnetic properties in samples free of Ge3Mn5 clusters. The lineshapes of the XAS-XMCD spectra in the nanocolumns are found to be very similar to those in Ge3Mn5. The local magnetic moment on the Mn atom possess a small but non-zero orbital component and its total magnitude is much smaller (0.8 +/- 0.1 µB) than that in Ge3Mn5 (~2.6 µB) or than that expected for fully substitutional Mn atoms (~3 µB). This points to a different nature of the nanocolumns. The XAS-XMCD spectra have been calculated for several structural models, including simple defects and new crystalline phases, and critical parameters for the calculations have been identified. The best agreement is found for a new Ge2Mn crystalline phase.

Self-organization is a hot topic as it has the potential to create surface patterns on the nanoscale avoiding cost-intensive top-down approaches. Although chemists have promising results in this area, ion irradiation can create self-organized surface patterns in a more controlled manner. Different regimes of pattern formation under ion irradiation were described so far by 2D models. Here, two new regimes have been studied experimentally, which require modeling in 3D: subsurface point defect kinetics as well as ion impact-induced melt pool formation. This thesis deals with self-organized pattern formation on Ge and Si surfaces under normal incidence irradiation with heavy monatomic and polyatomic ions of energies up to several tens of keV. Irradiation has been performed using liquid metal ion sources in a focused ion beam facility with mass-separation as well as by conventional broad beam ion implantation. Irradiated samples have been analyzed mainly by scanning electron microscopy. Related to the specific irradiation conditions, investigation and discussion of pattern formation has been divided into two parts: (i) formation of Ge morphologies due to point defect kinetics and (ii) formation of Ge and Si morphologies due to melt pool dynamics. Point defect kinetics dominates pattern formation on Ge under irradiation with monatomic ions at room temperature. Irradiation of Ge with Bi and Ge ions at fluences up to 10^17 cm^(-2) has been performed. Comprehensive studies show for the first time that morphologies change from flat surfaces over hole to nanoporous, sponge-like patterns with increasing ion energy. This study is consistent with former irradiations of Ge with a few ion energies. Based on my studies, a consistent, qualitative 3D model of morphology evolution has been developed, which attributes the ion energy dependency of the surface morphology to the depth dependency of point defect creation and relaxation. This model has been proven by atomistic computer experiments, which reproduce the patterns found in real irradiation experiments. At extremely high energy densities deposited by very heavy ions another mechanism dominates pattern formation. The formation of Ge and Si dot patterns by very heavy, monatomic and polyatomic Bi ion irradiation has been studied in detail for the first time. So far, this formation of pronounced dot pattern cannot be explained by any model. Comprehensive, experimental studies have shown that pattern formation on Ge is related to extremely high energy densities deposited by each polyatomic ion locally. The simultaneous impact of several atoms leads to local energy densities sufficient to cause local melting. Heating of Ge substrates under ion irradiation increases the achievable energy density in the collision cascade substantially. This prediction has been confirmed experimentally: it has been found that the threshold for nanomelting can be lowered by substrate heating, which allows pattern formation also under heavy, monatomic ion irradiation. Extensive studies of monatomic Bi irradiation of heated Ge have shown that morphologies change from sponge-like over highly regular dot patterns to smooth surfaces with increasing substrate temperature. The change from sponge-like to dot pattern is correlated to the melting of the ion collision cascade volume, with energy densities sufficient for melt pool formation at the surface. The model of pattern formation on Ge due to extremely high deposited energy densities is not specific to a single element. Therefore, Si has been studied too. Dot patterns have been found for polyatomic Bi ion irradiation of hot Si, which creates sufficiently high energy densities to allow ion impact-induced melt pool formation. This proves that pattern formation by melt pool formation is a novel, general pattern formation mechanism. Using molecular dynamics simulations of project partners, the correlation between dot patterning and ion impact-induced melt pool formation has been proven. The driving force for dot pattern formation due to high deposited energy densities has been identified and approximated in a first continuum description.

Self-organization is a hot topic as it has the potential to create surface patterns on the nanoscale avoiding cost-intensive top-down approaches. Although chemists have promising results in this area, ion irradiation can create self-organized surface patterns in a more controlled manner. Different regimes of pattern formation under ion irradiation were described so far by 2D models. Here, two new regimes have been studied experimentally, which require modeling in 3D: subsurface point defect kinetics as well as ion impact-induced melt pool formation. This thesis deals with self-organized pattern formation on Ge and Si surfaces under normal incidence irradiation with heavy monatomic and polyatomic ions of energies up to several tens of keV. Irradiation has been performed using liquid metal ion sources in a focused ion beam facility with mass-separation as well as by conventional broad beam ion implantation. Irradiated samples have been analyzed mainly by scanning electron microscopy. Related to the specific irradiation conditions, investigation and discussion of pattern formation has been divided into two parts: (i) formation of Ge morphologies due to point defect kinetics and (ii) formation of Ge and Si morphologies due to melt pool dynamics. Point defect kinetics dominates pattern formation on Ge under irradiation with monatomic ions at room temperature. Irradiation of Ge with Bi and Ge ions at fluences up to 10^17 cm^(-2) has been performed. Comprehensive studies show for the first time that morphologies change from flat surfaces over hole to nanoporous, sponge-like patterns with increasing ion energy. This study is consistent with former irradiations of Ge with a few ion energies. Based on my studies, a consistent, qualitative 3D model of morphology evolution has been developed, which attributes the ion energy dependency of the surface morphology to the depth dependency of point defect creation and relaxation. This model has been proven by atomistic computer experiments, which reproduce the patterns found in real irradiation experiments. At extremely high energy densities deposited by very heavy ions another mechanism dominates pattern formation. The formation of Ge and Si dot patterns by very heavy, monatomic and polyatomic Bi ion irradiation has been studied in detail for the first time. So far, this formation of pronounced dot pattern cannot be explained by any model. Comprehensive, experimental studies have shown that pattern formation on Ge is related to extremely high energy densities deposited by each polyatomic ion locally. The simultaneous impact of several atoms leads to local energy densities sufficient to cause local melting. Heating of Ge substrates under ion irradiation increases the achievable energy density in the collision cascade substantially. This prediction has been confirmed experimentally: it has been found that the threshold for nanomelting can be lowered by substrate heating, which allows pattern formation also under heavy, monatomic ion irradiation. Extensive studies of monatomic Bi irradiation of heated Ge have shown that morphologies change from sponge-like over highly regular dot patterns to smooth surfaces with increasing substrate temperature. The change from sponge-like to dot pattern is correlated to the melting of the ion collision cascade volume, with energy densities sufficient for melt pool formation at the surface. The model of pattern formation on Ge due to extremely high deposited energy densities is not specific to a single element. Therefore, Si has been studied too. Dot patterns have been found for polyatomic Bi ion irradiation of hot Si, which creates sufficiently high energy densities to allow ion impact-induced melt pool formation. This proves that pattern formation by melt pool formation is a novel, general pattern formation mechanism. Using molecular dynamics simulations of project partners, the correlation between dot patterning and ion impact-induced melt pool formation has been proven. The driving force for dot pattern formation due to high deposited energy densities has been identified and approximated in a first continuum description.