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Just-in-time adaptive disturbance estimation for run-to-run control in semiconductor processesFirth, Stacy Kay. January 2002 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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A comparison of calcium gluconate and Zephiran for the treatment of dermal hydrofluoric acid exposureAlters, Joshua. January 2002 (has links) (PDF)
Thesis--PlanB (M.S.)--University of Wisconsin--Stout, 2002. / Includes bibliographical references.
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Comparative risk assessment of a cylinder handling system and a bulk liquid distribution system for TrichlorosilaneFetzer, Molly M. January 1998 (has links) (PDF)
Thesis--PlanB (M.S.)--University of Wisconsin--Stout, 1998. / Includes bibliographical references.
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An analysis of chlorine trifluoride as an effective substitute for nitrogen triflouride in the chemical vapor deposition reactor cleaning processVan Dyke, Stephanie A. January 1998 (has links) (PDF)
Thesis--PlanB (M.S.)--University of Wisconsin--Stout, 1998. / Includes bibliographical references.
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An analysis and development of controls for exposures to maintenance personnel working on the plasma metal etchersBoysen, Christopher J. January 1998 (has links) (PDF)
Thesis, PlanB (M.S.)--University of Wisconsin--Stout, 1998. / Includes bibliographical references.
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Energy analysis, diagnostics, and conservation in semiconductor manufacturingMardikar, Yogesh Mukesh. January 2004 (has links)
Thesis (M.S.)--West Virginia University, 2004. / Title from document title page. Document formatted into pages; contains viii, 152 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 106-108).
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Determining an advertising position in the Japanese semiconductor market a cultural and content analysis /Helgert, Joseph P. January 1988 (has links)
Thesis (Ph. D.)--Union for Experimenting Colleges and Universities, 1988. / Includes bibliographical references (leaves 102-103).
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In situ monitoring of reactive ion etchingMorris, Bryan George Oneal. January 2009 (has links)
Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010. / Committee Chair: May, Gary; Committee Member: Brand,Oliver; Committee Member: Hasler,Paul; Committee Member: Kohl,Paul; Committee Member: Shamma,Jeff. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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How leaders develop in the semiconductor industry : a case study /Sechrest, Thomas Lee, January 1999 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 259-270). Available also in a digital version from Dissertation Abstracts.
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Development of polymer templates for ZnO nanorodsDobson, Stephen Robert January 2014 (has links)
One of the biggest challenges for the semiconductor industry is the development of nanofabrication techniques that allow for the fabrication of structures on a scale tens of nanometers in size. This provides greater potential functionality at reduced costs. Established conventional techniques, such as photolithography, are unable to achieve features below 30 nm due to the inherent limitations of the wavelength of light sources currently available. For this reason block copolymers received considerable attention in order to overcome these challenges in lithographic technology. Block copolymers have an inherent processing advantage of self assembling into various nanoscopic structures such as spheres, cylinders and lamellae amongst others on a scale below 50 nm. The dimensions and structures are readily tuneable based on molecular weights (Mw) and compositions of the copolymers. However, to be usable within industry a great deal more research still needs to be conducted on the use and nature of block copolymers. In this study the block copolymer of poly(styrene-block-methylmethacrylate) (PS-b-PMMA) was investigated as a potential nano-mask for semiconductor growth. Research was conducted on thin films of PS-b-PMMA by altering the parameters influencing the kinetics and thermodynamic effects on the thin films, in order to produce a structure of cylinders of PMMA perpendicular to the substrate within a PS matrix on a silicon (Si) substrate. It is shown that thermally annealing the PS-b-PMMA thin films under conditions where there is no preferential interaction of the substrate or open surface with either components of the block copolymer (i.e. PS or PMMA with Si or ambient) and at an appropriate thin film thickness, perpendicular cylinders of PMMA within a PS matrix form in the thin films. The determined ideal thin film thickness is 32 nm, with non-preferential interaction attained between block and substrate by coating a poly(styrene-random-methylmethacrylate) (PS-r-PMMA) on the Si substrate and annealing within a vacuum. Additionally, acetic acid, as a known selective solvent of PMMA, is used to further process the thin film of PS-b-PMMA. Thus a final PS nano-mask containing pores with a diameter tens of nanometers in size is produced. The pores are shown to have an average diameter of 13.5 nm. Measurements were taken throughout the investigation using a scanning probe microscope (SPM) to determine surface topography and phase morphology of the PS-b-PMMA thin films. X-ray reflectometry (XRR) is used to measure film thickness. The research in this study shows that thin films of PS containing hexagonally arranged pores can be produced and could find potential use as a nano-mask for semiconductor growth.
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