D.Ing. (Electrical and Electronic Engineering) / A theory was developed for the investigation of the optical properties of inhomogeneous layered media. Reflectivity and transmissivity analysis of multi-layered structures was realized by utilizing flow graph representations and by employing Mason's rule. This study served as a base for the development of analytical expressions in integral form for reflectivity, transmissivity, reflectance, bilinear transformed reflectance and transmittance of materials possessing inhomogeneous refractive index profiles. These proposed formulas were derived for both normal and oblique incidence and contemplate nonabsorbing, as well as, absorbing materials. An ellipsometric expression for inhomogeneous layers was also derived by employing the developed theory. Several hypothetical examples that emulate refractive index profiles in ionimplanted semiconductors were investigated, including a buried layer with a gaussian refractive index profile, and two homogeneous layers with a half-gaussian transition region between them. Curves of reflectance versus wave number were simulated using the derived formulations in two different ways: (i) employing numerical methods (ii) applying analytical solutions. The performance of these simulations was compared to standard techniques such as the matrix method and the Wentzel-Kramers-Brillouin (WKB) approximation. Very good agreement between the proposed theory and the matrix technique was found. The developed formulations were appropriate even at wave numbers where the WKB approximation was not valid. It must be stressed that the analysis of the reflectance at these wave numbers is important in the study of processed semiconductors. In comparison to the matrix technique, the integral formulation led to substantial time saving, which, depending on the particular application, was between one and two orders of magnitude faster. This fact indicated that the developed expressions for reflectance and transmittance can be used to great advantage in least-square curve-fit ...

by Lo Veng Cheong. / Parallel title in Chinese characters. / Thesis (Ph.D.) -- Chinese University of Hong Kong, 1991. / Bibliography: leaves 116-119. / ACKNOWLEDGEMENT --- p.i / ABSTRACT --- p.ii / LIST OF SYMBOLS --- p.iv / LIST OF FIGURES --- p.ix / LIST OF TABLES --- p.xii / Chapter CHAPTER ONE --- INTRODUCTION --- p.1 / Chapter CHAPTER TWO --- SURVEYS ON THEORETICAL MODELS --- p.7 / Chapter 2.1 --- Some Basic Concepts --- p.7 / Chapter 2.1.1 --- Vacancy Mechanism and Interstitial Mechanism --- p.7 / Chapter 2.1.2 --- Relative Contribution from Various Point Defects Species --- p.15 / Chapter 2.1.3 --- Impurity Point Defect Pairs or 'Centers' --- p.20 / Chapter 2.1.4 --- Anomalous Diffusion --- p.21 / Chapter 2.2 --- Historical Review on Theoretical Models --- p.22 / Chapter 2.3 --- Formulation of the General Model --- p.29 / Chapter 2.3.1 --- Effects to be and Not to be Considered --- p.30 / Chapter 2.3.2 --- Derivation of the Basic Equations --- p.31 / Chapter CHAPTER THREE --- MODELING OF THE DAMAGE ENHANCED DIFFUSION OF IMPLANTED BORONS IN SILICON --- p.35 / Chapter 3.1 --- Brief Description of Powell's Experiment --- p.35 / Chapter 3.2 --- Modeling --- p.38 / Chapter 3.3 --- Results and Discussion --- p.45 / Chapter CHAPTER FOUR --- EXPERIMENTAL INVESTIGATION OF BORON DIFFUSION DIFFUSION ASSISTED BY THE NON-UNIFORMITY OF POINT DEFECTS --- p.66 / Chapter 4.1 --- Introduction --- p.66 / Chapter 4.2 --- Experimental --- p.67 / Chapter 4.3 --- Results and Discussion --- p.88 / Chapter CHAPTER FIVE --- CONCLUSION AND FURTHER SUGGESTIONS --- p.103 / Chapter 5.1 --- Conclusion --- p.103 / Chapter 5.2 --- Further Suggestions --- p.104 / Chapter APPENDIX A --- DOPANT CONCENTRATION DEPENDENCE OF THE ENHANCED DIFFUSION --- p.107 / Chapter APPENDIX B --- FLOW CHART OF NUMERICAL SIMULATION --- p.111 / REFERENCE --- p.116

No description available.

Future electronic devices having dimensions on the nanometer scale will rely on the resultant quantum effects for their operation. In this project, these quantum effects were investigated through the theoretical modeling and computer simulation of a confined twodimensional electron gas in a semiconductor heterostructure. Assuming hardwall boundaries and sharp geometrical features, the nanostructure conductance has been calculated by finding transverse eigenvalues and eigenfunctions, computing hopping integrals for a one-dimensional tight binding lattice, determining the Greens' propagators, and then finally evaluating the transmittance. From the transmittance, the conductance was determined.A structured and modular computer program in FORTRAN was developed to investigate the effects of geometrical modifications on the conductance of ballistic nanochannels. The program has been designed in such a way that the user need only supply the nanostructure specifications to an input data file. The program then uses this data file to perform the calculations. A separate, user-friendly program has been developed to form the data file. The program is such that additions and modifications can be easily made in the future. / Department of Physics and Astronomy

Thesis (M.S.)--University of Florida, 2004. / Title from title page of source document. Document formatted into pages; contains 132 pages. Includes vita. Includes bibliographical references.

Thesis (M.S.)--West Virginia University, 2000. / Title from document title page. Document formatted into pages; contains iv, 68 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 67-68).

Graduation date: 1992

Thesis (Ph.D.)--University of Delaware, 2008. / Principal faculty advisor: John Q. Xiao, Dept. of Physics and Astronomy. Includes bibliographical references.

Thesis (Ph. D.)--University of Florida, 1984. / Description based on print version record. Typescript. In "AlxGa₁₋xAs" in title, "x" is subscript. Vita. Includes bibliographical references (leaves 182-189).

Thesis (Ph. D.)--Ohio State University, 2007. / Full text release at OhioLINK's ETD Center delayed at author's request