In this work, spin-on processes were used to improve front- and rear-side technologies of solar cells to increase efficiencies to >20 %. A limited source diffusion process was developed using phosphoric acid dopant solutions developed in-house. An optimal emitter was obtained to be used in conjunction with screen-printed contacts. This emitter was used to improve the efficiency of conventional full aluminum back surface field solar cells to 19.6 %. A streamlined process was then developed to fabricate high-efficiency dielectric rear passivated cells in a single high temperature step. This process combined the diffusion process described earlier with a spin-on dielectric for rear passivation to achieve solar cell efficiencies of ~20%. Several laser candidates were investigated to improve process reproducibility and throughput. Ultra-violet laser with nanosecond pulse width was identified as the optimal choice. Cell efficiencies of ~20% were reproduced using UV laser for ablation of rear dielectric. This cell design and process were transferred to low-cost low-lifetime commercial grade substrates after identifying the optimal substrate characteristics using modeling.

Solar photovoltaic has become one of the potential solutions for current energy needs and for combating greenhouse gas emissions. The photovoltaics (PV) industry is booming, with a yearly growth rate well in excess of 30% over the last decade. This explosive growth has been driven by market development programs to accelerate the deployment of sustainable energy options and rapidly increasing fossil fuel prices. Currently, the PV market is based on silicon wafer solar cells (thick cells of around 150–300 μm made of crystalline silicon). This technology, classified as the first-generation of photovoltaic cells. The second generation of photovoltaic materials is based on the introduction of thin film layers of semiconductor materials. Unfortunately, the conversion efficiency of the current PV systems is low despite the lower manufacturing costs. Nevertheless, to achieve highly efficient silicon solar cell devices, the development of new high quality materials in terms of structure and electrical properties is a must to overcome the issues related to amorphous silicon (a -Si:H) degradation. Meanwhile, to remain competitive with the conventional energy sources, cost must be taken into consideration. Moreover, novel approaches combined with conventional mature silicon solar cell technology can boost the conventional efficiency and break its maximum limits. In our approach, we set to achieve efficient, stable and affordable silicon solar cell devices by focusing on the development of a new device made of epitaxial films. This new device is developed using new epitaxial growth phosphorous and/or boron doped layers at low processing temperature using plasma enhanced chemical vapor deposition (PECVD). The junction between the phosphorous or boron-doped epitaxial film of the device is formed between the film and the p or n-type crystalline silicon (c-Si) substrate, giving rise to (n epi-Si/p c-Si device or p epi-Si/n c-Si device), respectively. Different processing conditions have been fully characterized and deployed for the fabrication of different silicon solar cells architectures. The high quality epitaxial film (up to 400 nm) was used as an emitter for an efficient stable homojunction solar cell. Extensive analysis of the developed fine structure material, using high resolution transmission electron microscope (HRTEM), showed that hydrogen played a crucial role in the epitaxial growth of highly phosphorous doped silicon films. The main processing parameters that influenced the quality of the structure were; radio frequency (RF) power density, the processing chamber pressure, the substrate temperature, the gas flow rate used for deposition of silicon films, and hydrogen dilution. The best result, in terms of structure and electrical properties, was achieved at intermediate hydrogen dilution (HD) regime between 91 and 92% under optimized deposition conditions of the rest of the processing parameters. The conductivity and the carrier mobility values are good indicators of the electrical quality of the silicon (Si) film and can be used to investigate the structural quality indirectly. The electrical conductivity analyses using spreading resistance profile (SRP), through the detection of active carriers inside the developed films, are presented in details for the developed epitaxial film under the optimized processing conditions. Measurements of the active phosphorous dopant revealed that, the film has a very high active carrier concentration of an average of 5.0 x1019 cm-3 with a maximum value of 6.9 x 1019 cm-3 at the interface between substrate and the epitaxial film. The observed higher concentration of electrically active P atoms compared to the total phosphorus concentration indicates that more than half of dopants become incorporated into substitutional positions. Highly doping efficiency ηd of more than 50 % was calculated from both secondary ion mass spectroscopy (SIMS) and SRP analysis. A variety of proposed structures were fabricated and characterized on planar, textured, and under different deposition temperatures. Detailed studies of the photovoltaic properties of the fabricated devices were carried out using epitaxial silicon films. The results of these studies confirmed that the measured open circuit voltage (Voc) of the device ranged between 575 and 580 mV with good fill factor (FF) values in the range of 74-76 %. We applied the rapid thermal process (RTP) for a very short time (60 s) at moderate temperature of 750oC to enhance the photovoltaic properties of the fabricated device. The following results were achieved, the values of Voc, and the short circuit current (Isc) were 598 mV and 27.5 mA respectively, with a fill factor value of up to 76 % leading to an efficiency of 12.5 %. Efficiency enhancement by 13.06 % was achieved over the reference cell which was prepared without using RTP. Another way to increase the efficiency of the fabricated device is to reduce the reflections from its polished substrate. This was achieved by utilizing the light trapping technique that transforms the reflective polished surface into a pyramidical texturing using alkaline solutions. Further enhancements of both Voc and Isc were achieved with values of 612 mV and 31mA respectively, and a fill factor of 76 % leading to an increase in the efficiency by up to 13.8 %. A noticeable efficiency enhancement by ~20 % over the reference cell is reported for the developed devices on the textured surfaces. Moreover, the efficiency of the fabricated epitaxial silicon solar cells can be boosted by the deployment of silicon nanocrystals (Si NCs) on the top surface of the fabricated devices. In the course of this PhD research we found a way to achieve this by depositing a thin layer of Si NCs, embedded in amorphous silicon matrix, on top of the epitaxial film. Structural analysis of the deposited Si NCs was performed. It is shown from the HRTEM analysis that the developed Si NCs, are randomly distributed, have a spherical shape with a radius of approximately 2.5 nm, and are 10-20 nm apart in the amorphous silicon matrix. Based on the size of the developed Si NCs, the optical band gap was found to be in the region of 1.8-2.2 eV. Due to the incorporation of Si NCs layer a noticeable enhancement in the Isc was reported.

A simple cost-effective approach was proposed and successfully employed to fabricate high-quality screen-printed (SP) contacts to high sheet-resistance emitters (100 ohm/sq) to improve the Si solar cell efficiency. Device modeling was used to quantify the performance enhancement possible from the high sheet-resistance emitter for various cell designs. It was found that for performance enhancement from the high sheet-resistance emitter, certain cell design criteria must be satisfied. Model calculations showed that in order to achieve any performance enhancement over the conventional ~40 ohm/sq emitter, the high sheet resistance emitter solar cell must have a reasonably good (120,000 cm/s) or low front-surface recombination velocity (FSRV). Model calculations were also performed to establish requirements for high fill factors (FFs). The results showed that the series resistance should be less than 0.8 ohm-cm^2, the shunt resistance should be greater than 1000 ohm-cm^2, and the junction leakage current should be less than 25 nA/cm^2. Analytical microscopy and surface analysis techniques were used to study the Ag-Si contact interface of different SP Ag pastes. Physical and electrical properties of SP Ag thick-film contacts were studied and correlated to understand and achieve good-quality ohmic contacts to high sheet-resistance emitters for solar cells. This information was then used to define the criteria for high-quality screen-printed contacts. The role of paste constituents and firing scheme on contact quality were investigated to tailor the high-quality screen-printed contact interface structure that results in high performance solar cells. Results indicated that small particle size, high glass transition temperature, rapid firing and less aggressive glass frit help in producing high-quality contacts. Based on these results high-quality SP contacts with high FFs0.78 on high sheet-resistance emitters were achieved for the first time using a simple single-step firing process. This technology was applied to different substrates (monocrystalline and multicrystalline) and surfaces (textured and planar). Cell efficiencies of ~16.2% on low-cost EFG ribbon substrates were achieved on high sheet-resistance emitters with SP contacts. A record high-efficiency SP solar cell of 19% with textured high sheet-resistance emitter was also fabricated and modeled.

Photovoltaics (PV) offers a unique opportunity to solve energy and environmental problems simultaneously since the solar energy is essentially free, unlimited, and not localized any part of the world. Currently, more than 90% of PV modules are produced from crystalline Si. However, wafer preparation of cast multicrystalline Si materials account for more than 40% of the PV module manufacturing cost, which can be significantly reduced by introducing the ribbon-type Si materials. Edge-defined film-fed grown (EFG) and String Ribbon Si materials are among the promising candidates for the cost-effective PV because they are grown directly from the Si melt, which eliminates the need for ingot slicing and chemical etch for surface preparation. However, the growth of these ribbon Si materials leads to relatively high concentration of metallic impurities and structural defects, resulting in very low as-grown carrier lifetime of less than 5 µs. Therefore, the challenge is to produce high-efficiency cells on EFG and String Ribbon Si by enhancing the carrier lifetime during the cell processing and to understand the effect of electrically active defects on cell performance through in-depth device characterization and modeling. The research tasks of this thesis focus on the understanding, development, and implementation of defect passivation to enhance the bulk carrier lifetime in ribbon Si materials for achieving high-efficiency cells. It is shown in this thesis that the release of hydrogen from SiNx layer is initially rapid and then slows down with time. However, the dissociation of hydrogen from defects continues at the same pace. Therefore, a short firing provides an effective defect passivation. An optimized hydrogenation process produces a record high-efficiency ribbon Si cells (4.0 cm2) with photolithography (18.3%) and screen-printed (16.8%) contacts. However, active defects are still present even after the optimized hydrogenation process. An analytical model is developed to assess the impact of inhomogeneously distributed active defects on cell performance, and the model is applied to establish the roadmap for achieving high-efficiency ribbon Si cells in the presence of defects. Finally, PC1D simulations reveal that the successful implementation of the surface texturing can raise the cell efficiency to 18%.

Thesis (M.S.)--Mechanical Engineering, Georgia Institute of Technology, 2004. / Fedorov, Andrei, Committee Member ; Mahan, J. Robert, Committee Member ; Zhang, Zhuomin, Committee Chair. Includes bibliographical references (leaves 80-82).

No description available.

Solar photovoltaic has become one of the potential solutions for current energy needs and for combating greenhouse gas emissions. The photovoltaics (PV) industry is booming, with a yearly growth rate well in excess of 30% over the last decade. This explosive growth has been driven by market development programs to accelerate the deployment of sustainable energy options and rapidly increasing fossil fuel prices. Currently, the PV market is based on silicon wafer solar cells (thick cells of around 150–300 μm made of crystalline silicon). This technology, classified as the first-generation of photovoltaic cells. The second generation of photovoltaic materials is based on the introduction of thin film layers of semiconductor materials. Unfortunately, the conversion efficiency of the current PV systems is low despite the lower manufacturing costs. Nevertheless, to achieve highly efficient silicon solar cell devices, the development of new high quality materials in terms of structure and electrical properties is a must to overcome the issues related to amorphous silicon (a -Si:H) degradation. Meanwhile, to remain competitive with the conventional energy sources, cost must be taken into consideration. Moreover, novel approaches combined with conventional mature silicon solar cell technology can boost the conventional efficiency and break its maximum limits. In our approach, we set to achieve efficient, stable and affordable silicon solar cell devices by focusing on the development of a new device made of epitaxial films. This new device is developed using new epitaxial growth phosphorous and/or boron doped layers at low processing temperature using plasma enhanced chemical vapor deposition (PECVD). The junction between the phosphorous or boron-doped epitaxial film of the device is formed between the film and the p or n-type crystalline silicon (c-Si) substrate, giving rise to (n epi-Si/p c-Si device or p epi-Si/n c-Si device), respectively. Different processing conditions have been fully characterized and deployed for the fabrication of different silicon solar cells architectures. The high quality epitaxial film (up to 400 nm) was used as an emitter for an efficient stable homojunction solar cell. Extensive analysis of the developed fine structure material, using high resolution transmission electron microscope (HRTEM), showed that hydrogen played a crucial role in the epitaxial growth of highly phosphorous doped silicon films. The main processing parameters that influenced the quality of the structure were; radio frequency (RF) power density, the processing chamber pressure, the substrate temperature, the gas flow rate used for deposition of silicon films, and hydrogen dilution. The best result, in terms of structure and electrical properties, was achieved at intermediate hydrogen dilution (HD) regime between 91 and 92% under optimized deposition conditions of the rest of the processing parameters. The conductivity and the carrier mobility values are good indicators of the electrical quality of the silicon (Si) film and can be used to investigate the structural quality indirectly. The electrical conductivity analyses using spreading resistance profile (SRP), through the detection of active carriers inside the developed films, are presented in details for the developed epitaxial film under the optimized processing conditions. Measurements of the active phosphorous dopant revealed that, the film has a very high active carrier concentration of an average of 5.0 x1019 cm-3 with a maximum value of 6.9 x 1019 cm-3 at the interface between substrate and the epitaxial film. The observed higher concentration of electrically active P atoms compared to the total phosphorus concentration indicates that more than half of dopants become incorporated into substitutional positions. Highly doping efficiency ηd of more than 50 % was calculated from both secondary ion mass spectroscopy (SIMS) and SRP analysis. A variety of proposed structures were fabricated and characterized on planar, textured, and under different deposition temperatures. Detailed studies of the photovoltaic properties of the fabricated devices were carried out using epitaxial silicon films. The results of these studies confirmed that the measured open circuit voltage (Voc) of the device ranged between 575 and 580 mV with good fill factor (FF) values in the range of 74-76 %. We applied the rapid thermal process (RTP) for a very short time (60 s) at moderate temperature of 750oC to enhance the photovoltaic properties of the fabricated device. The following results were achieved, the values of Voc, and the short circuit current (Isc) were 598 mV and 27.5 mA respectively, with a fill factor value of up to 76 % leading to an efficiency of 12.5 %. Efficiency enhancement by 13.06 % was achieved over the reference cell which was prepared without using RTP. Another way to increase the efficiency of the fabricated device is to reduce the reflections from its polished substrate. This was achieved by utilizing the light trapping technique that transforms the reflective polished surface into a pyramidical texturing using alkaline solutions. Further enhancements of both Voc and Isc were achieved with values of 612 mV and 31mA respectively, and a fill factor of 76 % leading to an increase in the efficiency by up to 13.8 %. A noticeable efficiency enhancement by ~20 % over the reference cell is reported for the developed devices on the textured surfaces. Moreover, the efficiency of the fabricated epitaxial silicon solar cells can be boosted by the deployment of silicon nanocrystals (Si NCs) on the top surface of the fabricated devices. In the course of this PhD research we found a way to achieve this by depositing a thin layer of Si NCs, embedded in amorphous silicon matrix, on top of the epitaxial film. Structural analysis of the deposited Si NCs was performed. It is shown from the HRTEM analysis that the developed Si NCs, are randomly distributed, have a spherical shape with a radius of approximately 2.5 nm, and are 10-20 nm apart in the amorphous silicon matrix. Based on the size of the developed Si NCs, the optical band gap was found to be in the region of 1.8-2.2 eV. Due to the incorporation of Si NCs layer a noticeable enhancement in the Isc was reported.

In order to improve the optical losses of spherical silicon solar cells, new fabrication designs were presented. The new device structures are fabricated based on integration of nanostructures into spherical silicon solar cells. These new device structures include: spherical silicon solar cells integrated with nanostructured antireflection coating layers, spherical silicon solar cells with hemispherical nanopit texturing, and cells integrated with colloidal quantum dots. Silicon spheres were characterized by means of transmission electron microscopy (TEM), single-crystal x-ray diffraction and x-ray powder diffraction to establish the crystallinity nature of the silicon spheres. Furthermore, the material properties of silicon spheres including surface morphology, microwave photoconductivity decay lifetime, and impurity elemental distributions were studied. Silicon nitride antireflection coating layers were developed and deposited onto the spherical silicon solar cells, using a PECVD system. A low temperature hydrogenation plasma technique was developed to improve the passivation quality of the spherical silicon solar cells. The spectral response of silicon spheres with and without a silicon nitride antireflection coating was studied. We have successfully developed and integrated a nanostructured antireflection coating layer into spherical silicon solar cells. The nanostructured porous layer consists of graded-size silicon nanocrystals and quantum-size Si nanoparticles embedded in an oxide matrix. This layer has been characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), Scanning tunneling TEM, energy filtered TEM, transmission electron diffraction (TED), electron energy loss spectroscopy (EELS), energy dispersive x-ray (EDX), Raman spectroscopy and photoluminescence spectroscopy (PL). We developed a novel technique of electrochemical etching for silicon surface texturing using a liquid-phase deposition of oxide mask. Using a focus ion-beam (FIB) technique, cross-sectional TEM samples were prepared to investigate the nature of texturing and the composition of the deposited mask. The hemispherical nanopit texturing was successfully integrated into spherical silicon solar cells and the etching mechanisms and the chemical reactions were discussed. CdSe colloidal quantum dots with diameter of about 2.8nm were integrated into a graded-density nanoporous layer. This structure was implemented on the emitter of the spherical silicon solar cells and the spectral response with and without incorporation of QDs was studied.

Gold nanoparticles were deposited onto a silicon substrate using electroless deposition. The process was optimized by adjusting the deposition time, the temperature of the plating solution, the amount of time that the silicon was exposed to hydrofluoric acid, and the concentration of the plating solution. The nanoparticles deposited on the silicon were characterized using scanning electron microscopy. The optimized electroless deposition process was then used to modify the surface of silicon solar cells with gold nanoparticles for enhanced power generation. Spectral response and I-V curve tests were performed on the modified solar cells to quantify the enhancements. The modified surfaces of the silicon solar cells were characterized by scanning electron microscopy and reflectance measurements. The electroless deposition process was also used to generate nanostructures for surface-enhanced Raman scattering (SERS). A template-nanohole array was fabricated on silicon by focused ion beam milling. Gold nanoparticles were deposited in the holes of the template, resulting in interesting gold-nanodoughnut structures. The gold nanodoughnuts were examined by scanning electron microscopy, and their potential as SERS substrates were tested using Rhodamine 6G as a molecular probe under 633 nm laser excitation. / Graduate / 0494 / 0485 / mmillard@uvic.ca

Gold nanoparticles were deposited onto a silicon substrate using electroless deposition. The process was optimized by adjusting the deposition time, the temperature of the plating solution, the amount of time that the silicon was exposed to hydrofluoric acid, and the concentration of the plating solution. The nanoparticles deposited on the silicon were characterized using scanning electron microscopy. The optimized electroless deposition process was then used to modify the surface of silicon solar cells with gold nanoparticles for enhanced power generation. Spectral response and I-V curve tests were performed on the modified solar cells to quantify the enhancements. The modified surfaces of the silicon solar cells were characterized by scanning electron microscopy and reflectance measurements. The electroless deposition process was also used to generate nanostructures for surface-enhanced Raman scattering (SERS). A template-nanohole array was fabricated on silicon by focused ion beam milling. Gold nanoparticles were deposited in the holes of the template, resulting in interesting gold-nanodoughnut structures. The gold nanodoughnuts were examined by scanning electron microscopy, and their potential as SERS substrates were tested using Rhodamine 6G as a molecular probe under 633 nm laser excitation. / Graduate / 0494 / 0485 / mmillard@uvic.ca