Wireless backhaul communication and power transfer can make the deployment of outdoor small cells (SCs) more cost effective; thus, their rapid densification can be enabled. For the first time, solar cells can be leveraged for the two-fold function of energy harvesting (EH) and high speed optical wireless communication. In this thesis, two complementary concepts for power provision to SCs are researched using solar cells – the optical wireless power transfer (OWPT) in the nighttime and solar EH during daytime. A harvested power of 1W is considered to be required for an autonomous SC operation. The conditions of darkness – worst case scenario – are initially selected, because the SC needs to harvest power in the absence of ambient light. The best case scenario of daytime SC EH from sunlight is then explored to determine the required battery size and the additional power from optical sources. As a first approach, an indoor 5m experimental link is created using a white light-emitting diode for OWPT to an amorphous silicon (Si) solar panel. Despite the use of a large mirror for collimation, the harvested power and energy efficiency of the link are measured to be only 18:3mW and 0:1%, respectively. Up to five red laser diodes (LDs) with lenses and crystalline Si (c-Si) cells are used in a follow-up study to increase the link efficiency. A maximum power efficiency of 3:2% is measured for a link comprising two LDs and a mono-c-Si cell, and the efficiency of all of its components is determined. Also, the laser system is shown to achieve an improvement of the energy efficiency by 2:7 times compared with a state-of-the-art inductive power transfer system with dipole coils. Since the harvested power is only 25:7mW, an analytical model for an elliptical Gaussian beam is developed to determine the required number of LDs for harvesting 1W; this shows an estimated number of 61 red LDs with 50mW of output optical power per device. However, a beam enclosure of the developed Class 3B laser system of up to a 3:6m distance is required for eye safety. A simulation study is conducted in Zemax for the design of an outdoor 100m infrared wireless link able to harvest 1W under clear weather conditions. Harvesting 1:2W and meeting eye safety regulations for Class 1 are shown to be feasible by a 1550 nm laser link. The required number of laser power converters is estimated to be 47 with an area of 5 5mm2 per device. Also, the dimensions of the transmitter and receiver are considered to be acceptable for the practical application of SC EH. In the last part of this thesis, two multi-c-Si solar panels are initially used for EH in an outdoor environment during daytime. The power supply of at least 1W is shown to be achievable during hour periods under sunny and cloudy conditions. A maximum average power of 4:1W is measured in the partial presence of clouds using a 10W solar panel. Since the variability of weather conditions induces the harvested power to fluctuate with values of mW, the use of optical sources is required in periods of insufficient solar EH for SCs. Therefore, a hybrid solar/laser based EH design is proposed for a continuous annual SC provision of 1Win ‘darker’ places on earth such as Edinburgh, UK. The 10W multi-c-Si solar panel and the 1550 nm laser link are considered; thus, the feasibility of supplying the SC with at least 1Wper hour monthly using a battery with energy content of only 60Wh is shown through simulations. A maximum monthly average harvested power of 824mW is shown to be required by the 1550 nm laser system that has already been overachieved through simulations in Zemax.

abstract: This dissertation presents my work on development of deformable electronics using microelectromechanical systems (MEMS) based fabrication technologies. In recent years, deformable electronics are coming to revolutionize the functionality of microelectronics seamlessly with their application environment, ranging from various consumer electronics to bio-medical applications. Many researchers have studied this area, and a wide variety of devices have been fabricated. One traditional way is to directly fabricate electronic devices on flexible substrate through low-temperature processes. These devices suffered from constrained functionality due to the temperature limit. Another transfer printing approach has been developed recently. The general idea is to fabricate functional devices on hard and planar substrates using standard processes then transferred by elastomeric stamps and printed on desired flexible and stretchable substrates. The main disadvantages are that the transfer printing step may limit the yield. The third method is "flexible skins" which silicon substrates are thinned down and structured into islands and sandwiched by two layers of polymer. The main advantage of this method is post CMOS compatible. Based on this technology, we successfully fabricated a 3-D flexible thermal sensor for intravascular flow monitoring. The final product of the 3-D sensor has three independent sensing elements equally distributed around the wall of catheter (1.2 mm in diameter) with 120° spacing. This structure introduces three independent information channels, and cross-comparisons among all readings were utilized to eliminate experimental error and provide better measurement results. The novel fabrication and assembly technology can also be applied to other catheter based biomedical devices. A step forward inspired by the ancient art of folding, origami, which creating three-dimensional (3-D) structures from two-dimensional (2-D) sheets through a high degree of folding along the creases. Based on this idea, we developed a novel method to enable better deformability. One example is origami-enabled silicon solar cells. The solar panel can reach up to 644% areal compactness while maintain reasonable good performance (less than 30% output power density drop) upon 40 times cyclic folding/unfolding. This approach can be readily applied to other functional devices, ranging from sensors, displays, antenna, to energy storage devices. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2014

abstract: As crystalline silicon solar cells continue to get thinner, the recombination of carriers at the surfaces of the cell plays an ever-important role in controlling the cell efficiency. One tool to minimize surface recombination is field effect passivation from the charges present in the thin films applied on the cell surfaces. The focus of this work is to understand the properties of charges present in the SiNx films and then to develop a mechanism to manipulate the polarity of charges to either negative or positive based on the end-application. Specific silicon-nitrogen dangling bonds (·Si-N), known as K center defects, are the primary charge trapping defects present in the SiNx films. A custom built corona charging tool was used to externally inject positive or negative charges in the SiNx film. Detailed Capacitance-Voltage (C-V) measurements taken on corona charged SiNx samples confirmed the presence of a net positive or negative charge density, as high as +/- 8 x 1012 cm-2, present in the SiNx film. High-energy (~ 4.9 eV) UV radiation was used to control and neutralize the charges in the SiNx films. Electron-Spin-Resonance (ESR) technique was used to detect and quantify the density of neutral K0 defects that are paramagnetically active. The density of the neutral K0 defects increased after UV treatment and decreased after high temperature annealing and charging treatments. Etch-back C-V measurements on SiNx films showed that the K centers are spread throughout the bulk of the SiNx film and not just near the SiNx-Si interface. It was also shown that the negative injected charges in the SiNx film were stable and present even after 1 year under indoor room-temperature conditions. Lastly, a stack of SiO2/SiNx dielectric layers applicable to standard commercial solar cells was developed using a low temperature (< 400 °C) PECVD process. Excellent surface passivation on FZ and CZ Si substrates for both n- and p-type samples was achieved by manipulating and controlling the charge in SiNx films. / Dissertation/Thesis / Ph.D. Electrical Engineering 2013

Silicon photovoltaic (PV) is a promising solution for energy shortage and environmental pollution. We are experiencing an era when PV is exponentially increasing. Global cumulative installation had reached 380 GW in 2017. Among which, silicon-based PV productions share more than 90% market. Performance of the first two-generation commercial popular silicon solar cells - Al-BSF and PERC - are limited by metal/Si contacts, where interface defects significantly reduce the open-circuit voltage. In this context, full-area passivation concepts are proposed for c-Si solar cells, with expectation to enhance the efficiency via reducing carrier recombination loss at the contact regions. In this thesis, poly silicon on oxide (POLO) passivating contact is developed for high efficiency c-Si solar cells. We unveiled the working mechanisms of POLO cells and then optimized the device performance based on our conclusion. We use boiling nitric acid to oxidize c-Si surface, which is of significance to determine the POLO working mechanisms. Phosphorus and boron doped silicon films are deposited by plasma enhanced vapor deposition (PECVD) or low-pressure vapor deposition (LPCVD) followed by high temperature (>800°C) annealing. SiOx structural evolution process under different annealing temperature was observed and the corresponding effects on passivation have been elucidated. The carrier transport mechanisms in the POLO contact annealed at high temperature, e.g. 800°C  900°C, were explored. We unveil that carrier transport in POLO structure is a combination of tunneling and pinhole transport, but dominant at varied temperature regions. Phosphorus-doped n-type POLO contact is optimized by several parameters, such as doping concentration, film thickness, annealing temperature, film deposition temperature, film relaxation time during annealing process, etc. We successfully obtained minority carrier lifetime over 10ms and contact resistivity lower than 30 mΩ·cm2. Boron-doped p-type POLO contact is also optimized by changing the doping concentration and annealing temperature. Finally, further hydrogen passivation is applied to enhance p-type POLO contact passivation, achieving an iVoc>690 mV, J0 <5 fA/cm2 and contact resistivity 1.3 mΩ·cm2. With the optimized n-type and p-type POLO contacts, an efficiency over 18% is achieved on n-type c-Si solar cells with a flat front surface.

The importance of further research in the field of solar cells is crucial for the transition to cleaner energy. The aim of this project is to design and manufacture a contact system that can measure busbarless solar cells with an LBIC-system. In this project mono-crystalline busbarless solar cells were utilized, busbarless solar cells only have small fingers that go vertically. When an incident photon hits the solar cell it can be absorbed by the bulk material, by the pn-junction an electrical field will set the electrons in motion so an electrical current can be harvested. LBIC, which stands for light beam induced current is a technique to spatially map the quantum efficiency of a solar cell, there is also an availability to make phasemeasurements. There are two different quantum efficiencies, External quantum efficiency (EQE) and Internal quantum efficiency (IQE). The phase measurement of the LBIC shows how much resistance exists between the point of current-generation and the contacts where the current is collected. A contact system with a comb-like figure of phosphor bronze was manufactured and mounted on to the LBIC-machine. Several measurements were executed on two solar cells. This new contact system can measure busbarless solar cells, with a good connection to almost all the fingers on the solar cell. The lack of contact with some fingers seemed to not affect the end result too much. It isn’t vital to have contact with all fingers to get a decent LBIC-mapping. / Vikten av ytterligare forskning inom området solceller är avgörande för omställningen till renare energi. Syftet med detta projekt är att designa och tillverka ett kontaktsystem som kan mäta solceller utan busbars med ett LBIC-system. I detta projekt användes monokristallina solceller utan busbars, solceller utan busbars har endast smala fingrar som går vertikalt. När en infallande foton träffar solcellen kan den absorberas av bulkmaterialet, vid pn-övergången kommer ett elektriskt fält att sätta elektronerna i rörelse så att en elektriskström kan samlas in. LBIC, som står för light beam induced current är en teknik för att rumsligt kartlägga kvantverkningsgraden för en solcell, det finns även en möjlighet att göra fasmätningar. Det finns två olika kvanteffektiviteter, Extern kvanteffektivitet (EQE) och Intern kvanteffektivitet (IQE). Fasmätningen av LBIC visar hur mycket motstånd som finns mellan punkten för strömgenerering och kontakterna där strömmen samlas. Ett kontaktsystem med en kamliknande figur gjord av fosforbrons tillverkades och monterades på LBIC-maskinen. Flera mätningar utfördes på två solceller. Detta nya kontaktsystemet kan mäta solceller utan busbars, med bra anslutning till nästan alla fingrar på solcellen. Bristen på kontakt med enskilda fingrar verkade inte påverka slutresultatet alltför mycket. Det är alltså då inte nödvändigt att ha kontakt med alla fingrar för att få en anständig LBIC-mätning.

In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. It is found that a lower barrier height of dielectric matrix influences to the lateral electron transport of the SiQDs in such dielectric matrix. PL results confirm that the band gap of surface oxidized SiQDs widens due to quantum confinement. The present results reveal that the strong peak (Q-peak) due to quantum confinement is more effective in the emission with increasing SiQD concentration. The surface oxide is believed to play an important role in the reduction of SiQD luminescence due to a trapped exiciton. It is concluded that SiQDs surface oxide accompanied by a SiO2 matrix may not provide a good passivation in very small SiQD size. However the energy band gap and conductivity of the SiQDs are tunablity, in the optimum range of SiQD size and concentration. This observation may be important for future nanoelectronics applications.

In this thesis, the structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. RF magnetron co-sputtering provided the capability of creating superlattice structures in conjunction with high temperature annealing, to form Si nanocrystals in an oxide matrix. Structural techniques, including Fourier transform infrared spectroscopy (FTIR), micro-Raman spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), and Secondary ion mass spectroscopy (SIM) were employed to gather structural information about the SiQD/SiO2 SLs. The result combine presents that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The effect of Si nanocrystallite density on Raman scattering is investigated. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode peak of nanocrystalline Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (less than 3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD superlattice material. In this work, the Al contacting scheme, using a prolonged heat treatment technique at elevated temperature less than the eutectic point of Al and Si (577C) has been successfully applied to making Ohmic contacts on both SiQD SLs in oxide and nitride matrices. Activation energy (Ea) of SiQDs, extracted from a linear Arrhenius plot is investigated in the present work in order to expand the understanding of engineering electrical injection in laterally active paths. It is found that a lower barrier height of dielectric matrix influences to the lateral electron transport of the SiQDs in such dielectric matrix. PL results confirm that the band gap of surface oxidized SiQDs widens due to quantum confinement. The present results reveal that the strong peak (Q-peak) due to quantum confinement is more effective in the emission with increasing SiQD concentration. The surface oxide is believed to play an important role in the reduction of SiQD luminescence due to a trapped exiciton. It is concluded that SiQDs surface oxide accompanied by a SiO2 matrix may not provide a good passivation in very small SiQD size. However the energy band gap and conductivity of the SiQDs are tunablity, in the optimum range of SiQD size and concentration. This observation may be important for future nanoelectronics applications.

The global energy market is continuously changing due to changes in demand and fuel availability. Amongst the technologies considered as capable of fulfilling these future energy requirements, Photovoltaics (PV) are one of the most promising. Currently the majority of the PV market is fulfilled by crystalline Silicon (c-Si) solar cell technology, the so called 1st generation PV. Although c-Si technology is well established there is still a lot to be done to fully exploit its potential. The cost of the devices, and their efficiencies, must be improved to allow PV to become the energy source of the future. The surface of the c-Si device is one of the most important parts of the solar cell as the surface defines the electrical and the optical properties of the device. The surface is responsible for light reflection and charge carrier recombination. The standard surface finish is a thin film layer of silicon nitride deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). In this thesis an alternative technique of coating preparation is presented. The HiTUS sputtering tool, utilising a remote plasma source, was used to deposit the surface coating. The remote plasma source is unique for solar cells application. Sputtering is a versatile process allowing growth of different films by simply changing the target and/or the deposition atmosphere. Apart from silicon nitride, alternative materials to it were also investigated including: aluminium nitride (this was the first use of the material in solar cells) silicon carbide, and silicon carbonitride. All the materials were successfully used to prepare solar cells apart from the silicon carbide, which was not used due to too high a refractive index. Screen printed solar cells with a silicon nitride coating deposited in HiTUS were prepared with an efficiency of 15.14%. The coating was deposited without the use of silane, a hazardous precursor used in the PECVD process, and without substrate heating. The elimination of both offers potential processing advantages. By applying substrate heating it was found possible to improve the surface passivation and thus improve the spectral response of the solar cell for short wavelengths. These results show that HiTUS can deposit good quality ARC for silicon solar cells. It offers optical improvement of the ARC s properties, compared to an industrial standard, by using the DL-ARC high/low refractive index coating. This coating, unlike the silicon nitride silica stack, is applicable to encapsulated cells. The surface passivation levels obtained allowed a good blue current response.

The fabrication of low cost, high efficiency solar cells is imperative in competing with existing energy technologies. Many research groups have explored using III-V materials and thin-film technologies to create high efficiency cells; however, the materials and manufacturing processes are very costly as compared to monocrystalline silicon (Si) solar cells. Since commercial Si solar cells typically have efficiencies in the range of 17-19%, techniques such as surface texturing, depositing a surface-passivating film, and creating multi-junction Si cells are used to improve the efficiency without significantly increasing the manufacturing costs. This research focused on two of these techniques: (1) a tandem junction solar cell comprised of a thin-film perovskite top cell and a wafer-based Si bottom cell, and (2) Si solar cells with single- and double-layer silicon nitride (SiNx) anti-reflection coatings (ARC). The perovskite/Si tandem junction cell was modeled using a Matlab analytical program. The model took in material properties such as doping concentrations, diffusion coefficients, and band gap energy and calculated the photocurrents, voltages, and efficiencies of the cells individually and in the tandem configuration. A planar Si bottom cell, a cell with a SiNx coating, or a nanostructured black silicon (bSi) cell can be modeled in either an n-terminal or series-connected configuration with the perovskite top cell. By optimizing the bottom and top cell parameters, a tandem cell with an efficiency of 31.78% was reached. Next, planar Si solar cells were fabricated, and the effects of single- and double-layer SiNx films deposited on the cells were explored. Silicon nitride was sputtered onto planar Si samples, and the refractive index and thicknesses of the films were measured using ellipsometry. A range of refractive indices can be reached by adjusting the gas flow rate ratios of nitrogen (N2) and argon (Ar) in the system. The refractive index and thickness of the film affect where the minimum of the reflection curve is located. For Si, the optimum refractive index of a single-layer passivation film is 1.85 with a thickness of 80nm so that the minimum reflection is at 600nm, which is where the photon flux is maximized. However, using a double-layer film of SiNx, the Si solar cell performance is further improved due to surface passivation and lowered surface reflectivity. A bottom layer film with a higher refractive index passivates the Si cell and reduces surface reflectivity, while the top layer film with a smaller refractive index further reduces the surface reflectivity. The refractive indices and thicknesses of the double-layer films were varied, and current-voltage (IV) and external quantum efficiency (EQE) measurements were taken. The double-layer films resulted in an absolute value increase in efficiency of up to 1.8%.

Photovoltaic solar cells can generate electricity directly from sunlight without emitting harmful greenhouse gases. This makes them ideal candidates as large scale future energy producers for the global energy economy. Ideally, solar cells should be efficient and inexpensive to compete in the global energy market. Unfortunately, a number of fundamental limitations exist for the efficiency due to fundamental loss mechanisms of the semiconductor materials used to make solar cells. One of the dominant loss mechanisms from a conventional silicon solar cell is the transparency of sub-bandgap near-infrared photons. Up-conversion is an optical process involving the sequential absorption of lower energy photons followed by luminescence of a higher energy photon. This mechanism could be exploited to minimise photovoltaic sub-bandgap losses. Rare-earth doped materials have ideal up-conversion luminescent properties and have been utilised for many near-infrared to visible applications. This thesis investigates the near-infrared to near-infrared up-conversion processes required for the sub-bandgap photon utilisation within a silicon photovoltaic device. Various sodium yttrium fluoride phosphors doped with rare-earths were characterised theoretically and experimentally. Erbium doped phosphors were found to be ideal for single wavelength power dependent investigations for the non-linear up-conversion processes. The radiative and non-radiative rates of various erbium doped sodium yttrium fluoride phosphors have been approximated and compared with experimental photoluminescence results. These phosphors have been applied to the rear of a bi-facial silicon solar cell and an enhancement in the near-infrared region has been demonstrated. An external quantum efficiency close to 3.4% was measured at 1523nm under 6mW laser excitation. The non-linear dependence on incident pump power has been investigated along with the dominant up-conversion mechanisms involved. It can be concluded that up-conversion phosphors can enhance the near-infrared spectral response of a silicon device. These phosphors have high luminescent efficiencies once up-conversion occurs, but suffer from poor infrared absorption and low up-conversion efficiencies. The results from this study show that relatively high doping levels of selected rare-earths into low phonon energy crystals can improve the absorption and luminescent properties of the phosphor.