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Investigation of recombination lifetime and defects in magnetic czochralski silicon for high efficiency solar cellsPang, Shu Koon 12 1900 (has links)
No description available.
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112 |
Fundamental understanding and integration of rapid thermal processing, PECVD, and screen printing for cost-effective, high-efficiency silicon photovoltaic devicesDoshi, Parag Mahendra 12 1900 (has links)
No description available.
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113 |
Design, fabrication and analysis of high efficiency multicrystalline silicon solar cellsSana, Peyman 05 1900 (has links)
No description available.
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114 |
Radiation damage in copper indium diselenideHinks, Jonathan January 2007 (has links)
A study of radiation damage in copper indium diselenide (CIS) is presented. The build up of extended defects and the conditions for amorphisation have been explored. In particular, dislocation loops have been characterised and the intluence of composition and temperature on amorphisation has been investigated. CIS is a candidate for high-efficiency radiation-hard solar cells for use in extraterrestrial environments.
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Analytical model of an n+-p-p+ concentrator solar cellShaheen, Momtaz January 1988 (has links)
Concentrator solar cells operate under the conditions of non-uniform illumination and varying spectral content of incident sunlight. To predict the performance of such cells, an analytical model must account for varying carrier photogeneration rates within the cell. Further, the back surface junction fabricated to reduce recombination at the back contact must be included in the analysis.Most models of n+-p-p+ cells assume uniform generation rates within individual layers. In this study, a one-dimensional n+-p-p+ concentrator solar cell is modeled for all levels of illumination of incident sunlight. The photocarrier generation rate is considered as non-uniform in each layer of the cell. An absorption model is incorporated to permit the application for various spectral mixes of incident sunlight. The model also includes the effects of finite surface recombination velocities at the surfaces. Carrier transport equations for the three layers of the cell are developed and solved for the excess carrier concentrations under the assumptions of the model. Junction current density-voltage relationships for the two junctions of the cell are derived. The use of the current density equations in the evaluation of cell performance is discussed. / Department of Physics and Astronomy
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A study of Schottky barriers to CdS, and the CdTe : CdS heterojunctionForsyth, Nicola M. January 1989 (has links)
No description available.
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117 |
Optical modelling and optimisation of Spheral Solar'T'M CellsBisconti, Raffaella January 1997 (has links)
No description available.
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118 |
Studies of CdTe electrodepositionSugimoto, Yoshiharu January 1993 (has links)
No description available.
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119 |
Understanding and improving the operation of the dye-sensitized nanocrystalline TiO2 photoelectrochemical solar cell /Stanley, Andrew Philip. Unknown Date (has links)
Thesis(PhD)--University of South Australia, 1998
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Modeling of amorphous silicon/crystalline silicon heterojunction by commercial simulatorGhosh, Kunal. January 2009 (has links)
Thesis (M.S.E.C.E.)--University of Delaware, 2008. / Principal faculty advisor: Stephen P. Bremner, Dept. of Electrical & Computer Engineering. Includes bibliographical references.
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