Das Konzept neuartiger, resistiv schaltender Langzeitspeicherzellen sieht eine enorme Erhöhung der Speicherdichte bei gleichzeitig geringem Energieverbrauch und hoher Skalierbarkeit vor. In diesem Zusammenhang sind unterschiedlichste Übergangsmetalloxide Gegenstand der aktuellen Forschung, die zwischen Metallelektroden in einer Metall-Isolator-Metall-Struktur eingebettet sind. Ein anerkanntes Modell zur Klärung der lokalen Struktur innerhalb des Schaltmechanismus beschreibt die Änderung des resistiven Zustandes in der wechselnden Ausbildung und Auflösung eines leitfähigen Pfades in der Oxidschicht, der beide Elektroden miteinander verbindet. Die vorliegende Arbeit befasst sich auf dieser Grundlage mit der Untersuchung solcher Speicherzellen, wobei anhand der gewählten Elektrodenmaterialien Speichereffekte rein auf Änderungen im Oxid zurückzuführen sind. Die sich daraus ergebende Möglichkeit der gezielten Änderung des efekthaushaltes und des resistiven Schaltverhaltens der Oxidschichten durch deren Ausheizung oder Modifikation mittels Ionenimplantation stand im Fokus der Arbeit. Dementsprechend muss für eine genaue Lokalisierung des Schaltmechanismus die gewählte Oxidstruktur nicht nur genauestens bekannt, sondern auch möglichst rein sein. Zur Vereinigung all diese Faktoren wird das Modellsystem SrO-TiO2 mit den beiden Vertretern TiO2 und SrTiO3 untersucht, da seine Eigenschaften in der Literatur bereits rege diskutiert wurden. Zur Gewährleistung der Reinheit der Schichten wird die Herstellung der Isolatorschichten durch Atomlagenabscheidung eingesetzt und deren Optimierung, sowie Schichtcharakterisierung im ersten Teil der Arbeit vorgestellt. Mittels einer Vielzahl optischer und struktureller Analysemethoden lassen sich definierte Rückschlüsse über die Eigenschaften der Oxide ziehen. Sämtliche Veröffentlichungen zur Herstellung von SrTiO3 mittels Atomlagenabscheidung beziehen sich entweder auf eigens hergestellte Anlagensysteme oder Präkursormaterialien, wodurch die Schichten industriell nicht reproduzierbar sind. Eines der Ergebnisse der vorliegenden Arbeit ermöglicht eben dies durch die erstmalige Kombination einer kommerziell erhältlichen Anlage mit kommerziellen Präkursormaterialien. Nach deren Optimierung werden die Oxidschichten zwischen den beiden Metallelektroden Au und TiN integriert und die daraus resultierenden Speicherzellen elektrisch charakterisiert. Es kann bipolares, nichtflüchtiges, resistives Schaltverhalten in amorphen und ex situ kristallisierten Oxiden nachgewiesen werden. Anhand von Struktur-Eigenschaft-Korrelationen gelingt es, die Leitungsmechanismen in den untersuchten Speicherzellen als Schottky-Emission und bei ausreichend hohen Spannungen als volumendominierte Poole-Frenkel-Emission zu charakterisieren. Bei den dafür notwendigen Defekten handelt es sich um flache Donatorzustände. Die Annahme des resistiven Schaltens über einen reversiblen leitfähigen Pfad basierend auf Defektzuständen wird durch die Änderung der Coulomb-Barrierenhöhe bei konstanter Schottky-Barrierenhöhe innerhalb derselben Mikrostruktur bestätigt. Besonders das untersuchte TiO2 amorpher Struktur mit Schalt- und Lesegeschwindigkeiten von wenigen Millisekunden, aber auch polykristallines SrTiO3 zeigen ein hohes Potential für deren zukünftige Anwendung auf dem Gebiet resistiv schaltender Speicherzellen. Durch Kr+-Ionenimplantation ändern sich nachweislich sowohl die elektrischen als auch die strukturellen Eigenschaften in TiO2 und SrTiO3. XRD-Messungen an polykristallinen TiO2-Schichten bestätigen die mittels SRIM durchgeführten Simulationsdaten und zeigen für Implantationen ausreichend hoher Fluenzen eine Amorphisierung der kristallinen Strukturen durch atomare Umverteilung im Oxid. Dadurch bilden sich zusätzlich intrinsische, tiefe Defektniveaus in den Oxidschichten, welche das resistive Schalten modifizieren. Die Implantation polykristalliner TiO2-Schichten führt nachweislich zur Umwandlung flüchtiger in nichtflüchtige Schaltkurven, die im Vergleich zu amorphen Ausgangsproben stabilere Widerstandswerte bei geringerem Energieaufwand zeigen. / The concept of novel, longterm resistive switching memories is based on an enormous increase of the storage density with a simultaneous low energy consumption and a high scalability. In this context, different transition metal oxides, which are embedded between metal electrodes in a metal-insulatormetal structure, are part of the ongoing research. A widely recognized model for an explanation of the local structure within the switching mechanism discribes the alteration of the resistive state as a result of an alternating forming and interruption of a conducting path inside an oxide layer. The presence of such a filament acts like a linkage between the electrodes. Based on that, the present study deals with the investigation of such memory storages. In the wake of this the chosen electrode materials enables the determination of memory effects due to pure modifications inside the oxide layers. Thus, a targeted manipulation of defects and the resistive switching mechanism becomes possible by annealing of the layer or its modification by ion implantation which was the central challenge. Therefore the used oxide structures have to be well reputed and, additionally, almost free of defects to be able to localize changes in the switching mechanism exactly. To combine all this facts, the model system SrO-TiO2 is investigated with the two compounds TiO2 und SrTiO3. The properties of this system are already well discussed in literature. To ensure the purity of the layers, they are created by atomic layer deposition. The optimisation of the deposition process and layer characterization is presented in the first part of this study. Using a variety of optical and structural analysis methods allows defined conclusions about the oxide properties. All publications concerning the atomic layer deposition of SrTiO3 deal with self-made devices or precursor materials foreclosing an industrial reproduction. One of the results of this thesis enables exactly that by a combination of a commerically available device and commercial precursor materials. After its optimisation, the oxide layers are integrated between the two electrode materials Au and TiN in order to characterize the electrical properties of the resulting memory cells. Bipolar, nonvolatile resistive switching can be proved for amorphous and ex situ crystallised oxides. Based on structure-property correlations the conduction mechanism within the investigated cells can be identified as Schottky emission and for sufficiently high voltage as volume-dominated Poole Frenkel emission. The necessary defects therefore are determined to be shallow donor states. The assumption of resistive switching based on a reversible conducting filament consisting of defect states is confirmed by a changing Coulomb barrier high during the high of the Schottky barrier remains contant. Especially amorphous TiO2 with switching and reading speeds up to a few milliseconds, but also polycrystalline SrTiO3 showing high potential for future implementation in resistive switching memory cells. By use of Kr+ ion implantation the electrical and structural properties of TiO2 and SrTiO3 are changed. XRD measurements at crystalline TiO2 layers verify simulation data carried out by SRIM. For high enough fluences it shows an amorphisation of the crystalline structures by atomic redistribution inside the oxids. Thus, additionally intrinsic deep defects are created inside the oxide layers which modify the resistive switching character. A special focus is on the transformation of crystalline volatile switching TiO2 layers into amorphous non-volatile memory devices which shows more stable resistance values combined with lower energy input compared to initial amorphous layers.

This thesis reports on the chemical vapour deposition (CVD) growth of carbon nanostructures (mainly carbon nanotubes (CNTs)) on perovskite oxide surfaces with the aid of various catalysts. Two types of perovskite oxide, single crystal SrTiO3 (001) and polycrystalline BaSrTiO₃, have been used as catalyst supports (in metal-catalyst-involved CVD routes) or as catalysts (via metal-catalyst-free CVD routes) for the growth of carbon nanostructures. In metal-catalyst-involved cases, SrTiO₃ (001) single crystal has been proven, for the first time, to serve as a substrate for the growth of CNTs. Fe and Ni catalysts can be tailored in a controllable manner on SrTiO3 (001) surfaces prior to the CNT synthesis, forming truncated pyramid shaped nanocrystals with uniform size distributions. The growth of vertically aligned CNT carpets was realised with the aid of Fe on SrTiO₃ (001) surfaces, and it was further found that the CNTs grow via a base growth model. Furthermore, it is possible to grow helical carbon nanostructures on BaSrTiO3 substrates by introducing a Sn catalyst into the system. The synthesised helical carbon nanostructures follow a tip growth mode, where the structural and chemical aspects of catalyst particles gave rise to a wide range of carbon morphologies. CNTs were also grown on single crystal SrTiO₃ (001) and polycrystalline BaSrTiO3 substrates via metal-catalyst-free routes. The surface-roughness-tailored growth of CNTs was surprisingly achieved on a series of engineered SrTiO₃ (001) surfaces, where a correlation between the surface roughness/morphology of the substrates and the relevant catalytic activity was revealed. The growth of CNTs arises because the catalyst fabrication methods lead to the formation of SrTiO₃ asperities with nanoscale curvatures, over which the CNTs are generated throughout a lift-off process. Facet-selective growth of CNTs was observed on polycrystalline BaSrTiO₃ surfaces, where BaSrTiO₃ (110) facets lead to the growth of CNTs on them, whereas the (001) facets result in no growth at all. This observation was further analysed in the content of the adsorption and diffusion of carbon species on distinct BaSrTiO₃ facets, before reaching the conclusion that the formation of CNTs occurs through a metal-free, stack-up process driven by the assembly of the carbon fragments.

Das Konzept neuartiger, resistiv schaltender Langzeitspeicherzellen sieht eine enorme Erhöhung der Speicherdichte bei gleichzeitig geringem Energieverbrauch und hoher Skalierbarkeit vor. In diesem Zusammenhang sind unterschiedlichste Übergangsmetalloxide Gegenstand der aktuellen Forschung, die zwischen Metallelektroden in einer Metall-Isolator-Metall-Struktur eingebettet sind. Ein anerkanntes Modell zur Klärung der lokalen Struktur innerhalb des Schaltmechanismus beschreibt die Änderung des resistiven Zustandes in der wechselnden Ausbildung und Auflösung eines leitfähigen Pfades in der Oxidschicht, der beide Elektroden miteinander verbindet. Die vorliegende Arbeit befasst sich auf dieser Grundlage mit der Untersuchung solcher Speicherzellen, wobei anhand der gewählten Elektrodenmaterialien Speichereffekte rein auf Änderungen im Oxid zurückzuführen sind. Die sich daraus ergebende Möglichkeit der gezielten Änderung des efekthaushaltes und des resistiven Schaltverhaltens der Oxidschichten durch deren Ausheizung oder Modifikation mittels Ionenimplantation stand im Fokus der Arbeit. Dementsprechend muss für eine genaue Lokalisierung des Schaltmechanismus die gewählte Oxidstruktur nicht nur genauestens bekannt, sondern auch möglichst rein sein. Zur Vereinigung all diese Faktoren wird das Modellsystem SrO-TiO2 mit den beiden Vertretern TiO2 und SrTiO3 untersucht, da seine Eigenschaften in der Literatur bereits rege diskutiert wurden. Zur Gewährleistung der Reinheit der Schichten wird die Herstellung der Isolatorschichten durch Atomlagenabscheidung eingesetzt und deren Optimierung, sowie Schichtcharakterisierung im ersten Teil der Arbeit vorgestellt. Mittels einer Vielzahl optischer und struktureller Analysemethoden lassen sich definierte Rückschlüsse über die Eigenschaften der Oxide ziehen. Sämtliche Veröffentlichungen zur Herstellung von SrTiO3 mittels Atomlagenabscheidung beziehen sich entweder auf eigens hergestellte Anlagensysteme oder Präkursormaterialien, wodurch die Schichten industriell nicht reproduzierbar sind. Eines der Ergebnisse der vorliegenden Arbeit ermöglicht eben dies durch die erstmalige Kombination einer kommerziell erhältlichen Anlage mit kommerziellen Präkursormaterialien. Nach deren Optimierung werden die Oxidschichten zwischen den beiden Metallelektroden Au und TiN integriert und die daraus resultierenden Speicherzellen elektrisch charakterisiert. Es kann bipolares, nichtflüchtiges, resistives Schaltverhalten in amorphen und ex situ kristallisierten Oxiden nachgewiesen werden. Anhand von Struktur-Eigenschaft-Korrelationen gelingt es, die Leitungsmechanismen in den untersuchten Speicherzellen als Schottky-Emission und bei ausreichend hohen Spannungen als volumendominierte Poole-Frenkel-Emission zu charakterisieren. Bei den dafür notwendigen Defekten handelt es sich um flache Donatorzustände. Die Annahme des resistiven Schaltens über einen reversiblen leitfähigen Pfad basierend auf Defektzuständen wird durch die Änderung der Coulomb-Barrierenhöhe bei konstanter Schottky-Barrierenhöhe innerhalb derselben Mikrostruktur bestätigt. Besonders das untersuchte TiO2 amorpher Struktur mit Schalt- und Lesegeschwindigkeiten von wenigen Millisekunden, aber auch polykristallines SrTiO3 zeigen ein hohes Potential für deren zukünftige Anwendung auf dem Gebiet resistiv schaltender Speicherzellen. Durch Kr+-Ionenimplantation ändern sich nachweislich sowohl die elektrischen als auch die strukturellen Eigenschaften in TiO2 und SrTiO3. XRD-Messungen an polykristallinen TiO2-Schichten bestätigen die mittels SRIM durchgeführten Simulationsdaten und zeigen für Implantationen ausreichend hoher Fluenzen eine Amorphisierung der kristallinen Strukturen durch atomare Umverteilung im Oxid. Dadurch bilden sich zusätzlich intrinsische, tiefe Defektniveaus in den Oxidschichten, welche das resistive Schalten modifizieren. Die Implantation polykristalliner TiO2-Schichten führt nachweislich zur Umwandlung flüchtiger in nichtflüchtige Schaltkurven, die im Vergleich zu amorphen Ausgangsproben stabilere Widerstandswerte bei geringerem Energieaufwand zeigen. / The concept of novel, longterm resistive switching memories is based on an enormous increase of the storage density with a simultaneous low energy consumption and a high scalability. In this context, different transition metal oxides, which are embedded between metal electrodes in a metal-insulatormetal structure, are part of the ongoing research. A widely recognized model for an explanation of the local structure within the switching mechanism discribes the alteration of the resistive state as a result of an alternating forming and interruption of a conducting path inside an oxide layer. The presence of such a filament acts like a linkage between the electrodes. Based on that, the present study deals with the investigation of such memory storages. In the wake of this the chosen electrode materials enables the determination of memory effects due to pure modifications inside the oxide layers. Thus, a targeted manipulation of defects and the resistive switching mechanism becomes possible by annealing of the layer or its modification by ion implantation which was the central challenge. Therefore the used oxide structures have to be well reputed and, additionally, almost free of defects to be able to localize changes in the switching mechanism exactly. To combine all this facts, the model system SrO-TiO2 is investigated with the two compounds TiO2 und SrTiO3. The properties of this system are already well discussed in literature. To ensure the purity of the layers, they are created by atomic layer deposition. The optimisation of the deposition process and layer characterization is presented in the first part of this study. Using a variety of optical and structural analysis methods allows defined conclusions about the oxide properties. All publications concerning the atomic layer deposition of SrTiO3 deal with self-made devices or precursor materials foreclosing an industrial reproduction. One of the results of this thesis enables exactly that by a combination of a commerically available device and commercial precursor materials. After its optimisation, the oxide layers are integrated between the two electrode materials Au and TiN in order to characterize the electrical properties of the resulting memory cells. Bipolar, nonvolatile resistive switching can be proved for amorphous and ex situ crystallised oxides. Based on structure-property correlations the conduction mechanism within the investigated cells can be identified as Schottky emission and for sufficiently high voltage as volume-dominated Poole Frenkel emission. The necessary defects therefore are determined to be shallow donor states. The assumption of resistive switching based on a reversible conducting filament consisting of defect states is confirmed by a changing Coulomb barrier high during the high of the Schottky barrier remains contant. Especially amorphous TiO2 with switching and reading speeds up to a few milliseconds, but also polycrystalline SrTiO3 showing high potential for future implementation in resistive switching memory cells. By use of Kr+ ion implantation the electrical and structural properties of TiO2 and SrTiO3 are changed. XRD measurements at crystalline TiO2 layers verify simulation data carried out by SRIM. For high enough fluences it shows an amorphisation of the crystalline structures by atomic redistribution inside the oxids. Thus, additionally intrinsic deep defects are created inside the oxide layers which modify the resistive switching character. A special focus is on the transformation of crystalline volatile switching TiO2 layers into amorphous non-volatile memory devices which shows more stable resistance values combined with lower energy input compared to initial amorphous layers.

Solid oxide fuel cells (SOFCs) have attracted much interest as the most efficient electrochemical device to directly convert chemical energy to usable electrical energy. The porous Ni-YSZ anode known as the state-of-the-art cermet anode material is found to show serious degradation when using hydrocarbon as fuel due to carbon deposition, sulphur poisoning, and nickel sintering. In order to overcome these problems, doped strontium titanate has been investigated as a potential anode material due to its high electronic conductivity and stability in reducing atmosphere. In this work, A-site deficient strontium titanate co-doped with lanthanum and calcium, La₀.₂Sr₀.₂₅Ca₀.₄₅TiO₃ (LSCT[sub](A-)), was examined. Flat multilayer ceramics have been produced using the aqueous tape casting technique by controlling the sintering behaviour of LSCT[sub](A-), resulting in a 450µm thick porous LSCT[sub](A-) scaffold with a well adhered 40µm dense YSZ electrolyte. Impregnation of CeO₂ and Ni results in a maximum power density of 0.96Wcm⁻² at 800°C, higher than those of without impregnation (0.124Wcm⁻²) and with impregnation of Ni alone (0.37Wcm⁻²). The addition of catalysts into LSCT[sub](A-) anode significantly reduces the polarization resistance of the cells, suggesting an insufficient electrocatalytic activity of the LSCT[sub](A-) backbone for hydrogen oxidation, but LSCT[sub](A-) can provide the electronic conductivity required for anode. Later, the cells with the configuration of LSCT[sub](A-)/YSZ/LSCF-YSZ were prepared by the organic tape casting and impregnation techniques with only 300-m thick anode as support. The effects of metallic catalysts in the anode supports on the initial performance and stability in humidified hydrogen were discussed. The nickel and iron impregnated LSCT[sub](A-) cell exhibits a maximum powder density of 272mW/cm² at 700°C, much larger than 43mW/cm² for the cell without impregnation and 112mW/cm² for the cell with nickel impregnation. Simultaneously, the bimetal Ni-Fe impregnates have significantly reduced the degradation rates in humidified hydrogen (3% H₂O) at 700°C. The enhancement from impregnation of the bi-metal can possibly be the result of the presence of ionic conducting Wustite Fe₁₋ₓO that resides underneath the Ni-Fe metallic particles and better microstructure. Third, in order to improve the ionic conductivity of the anode support and increase the effective TPBs, ionic conducting ceria was impregnated into the LSCT[sub](A-) anode, along with the metallic catalysts. The CeO₂-LSCT[sub](A-) cell shows a poor performance upon operation in hydrogen atmosphere containing 3% H₂O; and with addition of metallic catalysts, the cell performance increases drastically by almost three-fold. However, the infiltrated Ni particles on the top of ceria layer cause the deposition of carbon filament leading to cell cracking when exposure to humidified methane (3% H₂O). No such behaviour was observed on the CeO₂-NiFe impregnated anode. The microstructure images of the impregnated anodes at different times during stability testing demonstrate that the grain growth of catalysts, the interaction between the anode backbone and infiltrates, and the spalling of the agglomerated catalysts are the main reasons for the performance degradation. Fourth, the YSZ-LSCT[sub](A-) composites including the YSZ contents of 5-80wt.% were investigated to determine the percolation threshold concentration of YSZ to achieve electronic and ionic conducting pathways when using the composite as SOFC anode backbone. The microstructure and dilatometric curves show that when the YSZ content is below 30%, the milled sample has a lower shrinkage than the unmilled one due to the blocking effect from the well distributed YSZ grains within LSCT[sub](A-) bulk. However, at the YSZ above 30% where two phases start to form the individual and interconnected bulk, the composites without ball milling process show a lower densification. The impact of YSZ concentration and ball milling process on the electrical properties of the composites reveals that the percolation threshold concentration is not only dependant on the actual concentration, but also related to the local arrangement of two phases. In Napier University, the electroless nickel-ceramic co-depositon process was investigated as a manufacturing technique for the anodes of planar SOFCs, which entails reduced costs and reduced high-temperature induced defects, compared with conventional fabrication techniques. The Ni-YSZ anodes prepared by the electroless co-deposition technique without the addition of surfactant adhere well to the YSZ electrolyte before and after testing at 800°C in humidified hydrogen. Ni-YSZ anodes co-deposited with pore-forming starch showed twice the maximum power density compared with those without the starch. It has therefore been demonstrated that a porous Ni-YSZ cermet structure was successfully manufactured by means of an electroless plating technique incorporating pore formers followed by firing at 450°C in air. Although the use of surfactant (CTAB) increases the plating thickness, it induces the formation of a Ni-rich layer on the electrolyte/anode interface, leading to the delamination of anode most likely due to the mismatched TECs with the adjacent YSZ electrolyte.

Este trabalho, realizado junto ao Grupo de Novos Materiais e Dispositivos (GNMD) pertencente ao Laboratório de Microeletrônica (LME) da Universidade de São Paulo, teve como objetivo correlacionar algumas propriedades físico-químicas de filmes finos de Ba1-XSrxTiO3 (BST), obtidos pela técnica de pulverização catódica reativa (sputtering), com os parâmetros de deposição, visando a fabricação de defasadores inteligentes operando em 60 GHz. Propriedades como cristalinidade e composição química foram estudadas e relacionadas com o tipo de substrato sobre o qual os filmes finos de BST foram depositados, e com os diversos parâmetros de deposição variados. Foi observada uma forte influência dos parâmetros de deposição, principalmente da temperatura e do tipo de substrato, na cristalinidade dos filmes. Os filmes depositados sobre cobre são mais cristalinos do que aqueles depositados sobre Si. Já a composição química dos filmes não variou significativamente, mantendo-se próxima à do alvo de sputtering utilizado, independentemente do substrato ou das condições de deposição. As propriedades elétricas dos filmes fabricados foram extraídas de capacitores de placas paralelas construídos utilizando o BST como dielétrico linear. As curvas de capacitância vs tensão a 1 MHz destes capacitores permitiram determinar uma variação de tunabilidade de até 44 %, para uma permissividade elétrica relativa de 310, valores estes compatíveis com aqueles encontrados na literatura. As propriedades elétricas dos filmes produzidos permitiram projetar um defasador de 1,3 mm2, com uma figura de mérito de 30º/dB para uma defasagem de 360º. / This work, performed at the New Materials and Devices Group (GNMD) of the Microelectronics Laboratory of the Polytechnic School of the University of São Paulo, has the objective to correlate reactive sputtered-BST thin films to its deposition parameters, aiming to produce a 60 GHz tunable phase shifter. Thin film crystallinity and stoichiometry were correlated with sputtering deposition parameters and the type of substrate. A strong influence of the sputtering parameters was observed on BST crystallinity, mainly the temperature and the type of substrate. Thin films on copper are more crystalline than on Si (100). The stoichiometry, on the other hand, did not change as function of the deposition parameters or the substrate in both cases. The thin films electrical properties were obtained by capacitance vs voltage measurements, with the BST as linear dielectric of a parallel plate capacitor. The capacitors 1 MHz C-V characterization showed tunabilities as high as 44%, for an electrical permittivity of 310. These properties allowed a phase shifter project, resulting a 1,3 mm2 device with a figure of merit of 30 º/dB for 360 º phase shift.

O titanato de estrôncio (SrTiO3) possui estrutura cristalina do tipo perovsquita. Materiais com este tipo de estrutura são utilizados para diversas aplicações, tais como, sensores, atuadores, em células a combustível de óxido sólido, entre outros. Devido as suas interessantes propriedades físicas, o SrTiO3 vem sendo intensamente estudado, em especial com a introdução de dopantes. Portanto, neste trabalho foi investigada a influência de diferentes teores de Ca (1; 2,5 e 5% mol) e Pr (0,025; 0,050; 0,075 e 1% mol) na microestrutura e propriedades elétricas e dielétricas do SrTiO3, assim como o material sem aditivos (puro). Os resultados mostram que após a sinterização do SrTiO3 puro, a microestrutura consiste de grãos poligonais com tamanho médio micrométrico, além de texturas lisas e rugosas. A condutividade elétrica das amostras sintetizadas sinterizadas a 1450 e 1500ºC é máxima para 2 horas de patamar. Apenas as amostras de SrTiO3 contendo 1% em mol de Ca apresentam fase única. O tamanho médio de grãos das amostras contendo 1% em mol de Ca é 10,65 ± 0,28 µm e para teores acima deste valor ocorre crescimento significativo dos grãos. As medidas de condutividade elétrica mostraram que as amostras contendo a adição de 1% em mol de Ca possuem maior condutividade dos grãos em relação ao material puro. Para as amostras contendo teores de até 0,075% mol de Pr, pode-se observar alguns grãos lisos e outros rugosos e não há variação considerável do tamanho médio de grãos. As amostras contendo menor teor de Pr (0,025% mol) apresentam maior condutividade dos grãos e contornos de grãos. As amostras de SrTiO3 sintetizado sinterizadas a 1450ºC/10 h apresentaram permissividade elétrica colossal em temperatura ambiente em altas frequências. / Strontium titanate (SrTiO3) exhibits cubic perovskite type crystalline structure at room temperature. Polycrystalline ceramics with this structure are potential candidates for a number of applications including sensors, actuators and in solid oxide fuel cells. Several properties of SrTiO3 are strongly dependent on addition of both donors and acceptors additives. Then, there is a growing interest for studying its properties as a function of type and concentration of additives. In this study, the effects of Ca (1, 2.5 and 5 mol%) and Pr (0.025 to 1 mol%) additions on microstructure and electric and dielectric properties of SrTiO3 were investigated. The microstructure of pure SrTiO3 consists of polygonal grains with average grain size in the micrometer range, and the electric conductivity is maximized after sintering for 2 h at 1450 and 1500ºC. Specimens containing 1 mol% Ca are single phase and the average grain size is 10.65 ± 0.28 µm, but for higher additive contents grain growth is observed. The electric conductivity of SrTiO3 with 1 mol% Ca is higher than that of the pure ceramic. Specimens containing Pr do not show significant grain growth, and the higher conductivity of grains and grain boundaries was achieved with 0.025 mol% Pr. Pure SrTiO3 sintered at 1450ºC for 10 h shows colossal dielectric permittivity (> 1.000) at room temperature, in contrast to specimens prepared with commercial powder (dielectric permittivity = 300), at high frequencies.

The aim of this work has been to use atomistic computer simulation methods to calculate the thermal conductivity and investigate factors that will modify the behaviour when applied to three different oxide materials: MgO, SiO2 and SrTiO3. These were chosen as they represent distinct classes of materials and are substrates for thermoelectric devices, where one of the primary goals is to tailor the system to reduce the thermal conductivity. Chapter 1 introduces thermoelectric concepts, gives a background of the theory and a review of various important thermoelectric materials. In Chapter 2 an overview of the interatomic interactions is presented along with details on the implementation of these interactions in a simulation of a 3D periodic crystal. Chapter 3 outlines the importance of phonon processes in crystals and several approaches to the calculation of thermal conductivity are presented. MgO results are given in Chapter 4. Both the Green-Kubo and Boltzmann transport equation (BTE) methods of calculating thermal conductivity were used. The effect on thermal conductivity of two different grain boundary systems are then compared and finally extended to MgO nanostructures, thus identifying the role of surfaces and complex nanostructure architectures on thermal conductivity. In Chapter 5 two different materials with the formula unit SiO2 are considered. The two materials are quartz and silicalite which show interesting negative thermal expansion behaviour which may impact upon the thermal transport within the material. Chapter 6 presents results on the promising thermoelectric material STO. Once again the results from both Green-Kubo and BTE calculations are compared. Grain boundaries are also studied and the effect of inter-boundary distance and boundary type on the thermal conductivity is explored. Finally, a nanostructured STO system (assembled nanocubes) with promising thermoelectric applications is studied. Chapter 7 outlines the conclusions made from this work and suggests areas for future study.

O titanato de estrôncio (SrTiO3) possui estrutura cristalina do tipo perovsquita. Materiais com este tipo de estrutura são utilizados para diversas aplicações, tais como, sensores, atuadores, em células a combustível de óxido sólido, entre outros. Devido as suas interessantes propriedades físicas, o SrTiO3 vem sendo intensamente estudado, em especial com a introdução de dopantes. Portanto, neste trabalho foi investigada a influência de diferentes teores de Ca (1; 2,5 e 5% mol) e Pr (0,025; 0,050; 0,075 e 1% mol) na microestrutura e propriedades elétricas e dielétricas do SrTiO3, assim como o material sem aditivos (puro). Os resultados mostram que após a sinterização do SrTiO3 puro, a microestrutura consiste de grãos poligonais com tamanho médio micrométrico, além de texturas lisas e rugosas. A condutividade elétrica das amostras sintetizadas sinterizadas a 1450 e 1500ºC é máxima para 2 horas de patamar. Apenas as amostras de SrTiO3 contendo 1% em mol de Ca apresentam fase única. O tamanho médio de grãos das amostras contendo 1% em mol de Ca é 10,65 ± 0,28 µm e para teores acima deste valor ocorre crescimento significativo dos grãos. As medidas de condutividade elétrica mostraram que as amostras contendo a adição de 1% em mol de Ca possuem maior condutividade dos grãos em relação ao material puro. Para as amostras contendo teores de até 0,075% mol de Pr, pode-se observar alguns grãos lisos e outros rugosos e não há variação considerável do tamanho médio de grãos. As amostras contendo menor teor de Pr (0,025% mol) apresentam maior condutividade dos grãos e contornos de grãos. As amostras de SrTiO3 sintetizado sinterizadas a 1450ºC/10 h apresentaram permissividade elétrica colossal em temperatura ambiente em altas frequências. / Strontium titanate (SrTiO3) exhibits cubic perovskite type crystalline structure at room temperature. Polycrystalline ceramics with this structure are potential candidates for a number of applications including sensors, actuators and in solid oxide fuel cells. Several properties of SrTiO3 are strongly dependent on addition of both donors and acceptors additives. Then, there is a growing interest for studying its properties as a function of type and concentration of additives. In this study, the effects of Ca (1, 2.5 and 5 mol%) and Pr (0.025 to 1 mol%) additions on microstructure and electric and dielectric properties of SrTiO3 were investigated. The microstructure of pure SrTiO3 consists of polygonal grains with average grain size in the micrometer range, and the electric conductivity is maximized after sintering for 2 h at 1450 and 1500ºC. Specimens containing 1 mol% Ca are single phase and the average grain size is 10.65 ± 0.28 µm, but for higher additive contents grain growth is observed. The electric conductivity of SrTiO3 with 1 mol% Ca is higher than that of the pure ceramic. Specimens containing Pr do not show significant grain growth, and the higher conductivity of grains and grain boundaries was achieved with 0.025 mol% Pr. Pure SrTiO3 sintered at 1450ºC for 10 h shows colossal dielectric permittivity (> 1.000) at room temperature, in contrast to specimens prepared with commercial powder (dielectric permittivity = 300), at high frequencies.

Este trabalho, realizado junto ao Grupo de Novos Materiais e Dispositivos (GNMD) pertencente ao Laboratório de Microeletrônica (LME) da Universidade de São Paulo, teve como objetivo correlacionar algumas propriedades físico-químicas de filmes finos de Ba1-XSrxTiO3 (BST), obtidos pela técnica de pulverização catódica reativa (sputtering), com os parâmetros de deposição, visando a fabricação de defasadores inteligentes operando em 60 GHz. Propriedades como cristalinidade e composição química foram estudadas e relacionadas com o tipo de substrato sobre o qual os filmes finos de BST foram depositados, e com os diversos parâmetros de deposição variados. Foi observada uma forte influência dos parâmetros de deposição, principalmente da temperatura e do tipo de substrato, na cristalinidade dos filmes. Os filmes depositados sobre cobre são mais cristalinos do que aqueles depositados sobre Si. Já a composição química dos filmes não variou significativamente, mantendo-se próxima à do alvo de sputtering utilizado, independentemente do substrato ou das condições de deposição. As propriedades elétricas dos filmes fabricados foram extraídas de capacitores de placas paralelas construídos utilizando o BST como dielétrico linear. As curvas de capacitância vs tensão a 1 MHz destes capacitores permitiram determinar uma variação de tunabilidade de até 44 %, para uma permissividade elétrica relativa de 310, valores estes compatíveis com aqueles encontrados na literatura. As propriedades elétricas dos filmes produzidos permitiram projetar um defasador de 1,3 mm2, com uma figura de mérito de 30º/dB para uma defasagem de 360º. / This work, performed at the New Materials and Devices Group (GNMD) of the Microelectronics Laboratory of the Polytechnic School of the University of São Paulo, has the objective to correlate reactive sputtered-BST thin films to its deposition parameters, aiming to produce a 60 GHz tunable phase shifter. Thin film crystallinity and stoichiometry were correlated with sputtering deposition parameters and the type of substrate. A strong influence of the sputtering parameters was observed on BST crystallinity, mainly the temperature and the type of substrate. Thin films on copper are more crystalline than on Si (100). The stoichiometry, on the other hand, did not change as function of the deposition parameters or the substrate in both cases. The thin films electrical properties were obtained by capacitance vs voltage measurements, with the BST as linear dielectric of a parallel plate capacitor. The capacitors 1 MHz C-V characterization showed tunabilities as high as 44%, for an electrical permittivity of 310. These properties allowed a phase shifter project, resulting a 1,3 mm2 device with a figure of merit of 30 º/dB for 360 º phase shift.

Submitted by Rosivalda Pereira (mrs.pereira@ufma.br) on 2017-08-10T15:19:49Z No. of bitstreams: 1 SergioAzevedo.pdf: 3063334 bytes, checksum: ac4355642257682013f550aad3b1a89a (MD5) / Made available in DSpace on 2017-08-10T15:19:49Z (GMT). No. of bitstreams: 1 SergioAzevedo.pdf: 3063334 bytes, checksum: ac4355642257682013f550aad3b1a89a (MD5) Previous issue date: 2015-07-09 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Strontium titanate, SrTiO3 (ST) is a mixed oxide from the group of perovskites, has a cubic structure and a band gap of 3.2 eV. In this study systems SrTiO3(ST), SrTi0,90Fe0,10O3(STF), Sr0,90Ag0,10TiO3(SAT) and Sr0,95Ag0,05Ti0,90Fe0,10O3(SATF) were synthesized by the Pechini method in which the same, favor the production of nanostructured materials with a high stoichiometric accordingly. The precursors used were titanium isopropoxide, citric acid, strontium nitrate, ferric nitrate, silver nitrate and ethylene glycol. For the formation of the precursor powder, the resin is calcined at 300 °C for 1 hour with a ramp of 10 °C min-1. The precursor powder was characterized by TG/DTA. For the formation of calcined systems we used different temperatures of 400 °C / 500 °C/ 600 °C/ 700 °C/ 2h with a ramp of 10 °C min-1. The sample composition was calcined in ST 550 °C/ 2h to examine the formation of the phase. The samples were characterized by X-Ray Diffraction (XRD) spectroscopy, FTIR, UV-Vis spectroscopy, Raman spectroscopy and B.E.T. the sample STF showed a peak shift DTA higher intensity to lower temperature, resulting in a more rapid decomposition. The x-ray diffractograms show the formation of perovskite phase at low temperature of 600 °C with secondary phase SrCO3 and TiO2, the SAT and SATF samples occurred and formation of metal pranta as a secondary phase. Infrared spectra show that the material exhibits short-range organization and having SrCO3 as a secondary phase. Raman spectra show first order band which is characteristic of tetragonal structure ST. The samples are mesoporous, the substitution Ti / Fe and Sr / Ag promoted the reduction of the surface area of the samples. The addition of iron as a substituent ST caused a reduction of the optical band gap 3.21(2) to 2.31(2) in PBS and 2.16(1) composition in SATF composition. It can be concluded that the method is efficient in the synthesis of structural organization samples with short and long range, using calcination temperatures above 600 °C, and that the substitution by Ti/Fe promotes the reduction of the band gap and the surface area of the ST. / O Titanato de estrôncio, SrTiO3 (ST) é um óxido misto do grupo das perovskitas, apresenta estrutura cúbica e um “band gap” de 3,2 eV. Neste estudo, os sistemas SrTiO3(ST), SrTi0,90Fe0,10O3(STF), Sr0,90Ag0,10TiO3(SAT) e Sr0,95Ag0,05Ti0,90Fe0,10O3(SATF) foram sintetizados pelo método Pechini, o mesmo favorece a obtenção de materiais com alta conformidade estequiométrica. Os precursores utilizados foram: isopropóxido de titânio, ácido cítrico, nitrato de estrôncio, nitrato férrico, nitrato de prata e etileno glicol. Para a formação do pó precursor, calcinou-se a resina a 300ºC por 1 hora com rampa de 10 ºC.min-1. O pó precursor foi caracterizado por TG/DTA. Para a formação dos sistemas calcinados utilizou-se diferentes temperaturas de 400 ºC/500 ºC/600 ºC/700 ºC/2h com rampa de 10 ºC.min-1. A amostra com composição ST foi calcinada em 550 ºC/2h para analisar a formação da fase. As amostras foram caracterizadas por Difração de Raios-X (DRX), Espectroscopia FTIR, Espectroscopia UV-VIS, Espectroscopia Raman e B.E.T. A amostra STF apresentou um deslocamento do pico DTA de maior intensidade, para temperatura menor, resultando em uma decomposição mais rápida. Os difratogramas de Raios-x comprovam a formação da fase perovskita a partir da temperatura de 600ºC, com fase secundaria de SrCO3 e TiO2, nas amostras SAT e SATF ocorreu e formação de pranta metálica como fase secundaria. Os espectros infravermelhos mostram que o material apresenta organização a curto alcance e que apresenta SrCO3 como fase secundária. Os espectros Raman apresentam banda de primeira ordem que é característico da fase tetragonal da estrutura ST. As amostras são mesoporosas, as substituições Ti/Fe e Sr/Ag promoveram a redução da área superficial das amostras. A adição de ferro como substituinte promoveu a redução do band gap óptico do ST de 3,21(2) para 2,31(2) na composição STF e 2,16(1) na composição SATF. Pode se concluir que o método é eficiente na síntese das amostras com organização estrutural a curto e longo alcance, utilizando temperaturas de calcinação acima de 600 ºC, e que a substituição Ti por Fe promove a redução do “band gap” e da área superficial do ST.