InAs/GaSb superlattices are an attractive material system for infrared light emitting diodes, due to the ability to tune the band gap throughout most of the infrared regime. A key consideration in the epitaxial growth of these heterostructures is crystalline material quality. In developing thick layers of epitaxially grown material, there are moderate amounts of elastic strain that can be incorporated into a heterostructure, beyond which deformations will form that will alleviate the lattice mismatch. This thesis investigates the optical and electronic properties of lattice-mismatched and strained materials through the study of thick dual-color light emitting diodes, broadband light emitting diodes, and InAs/GaSb superlattice devices developed on GaAs substrates and GaAs integrated circuits. A dual-color infrared light emitting diode is demonstrated emitting in the mid-wave infrared band at 3.81 μm and 4.72 μm. The design of the device stacks two independently operable InAs/GaSb superlattices structures on top of one another, so that 10 μm of material is grown with molecular beam epitaxy. Each layer is lattice-matched to a GaSb substrate. At quasi-continuous operation, radiances of 5.48 W/cm2-sr and 2.67 W/cm2-sr are obtained. A broadband light emitting diode spanning the mid-wave infrared is demonstrated with eight stages of InAs/GaSb superlattices individually tuned to a different color. The performance of the device is compared with an identical eight stage device emitting in the middle of the mid-wave infrared. The emission of the fabricated broadband device spans from 3.2 μm to 6 μm with peak radiance of 137.1 mW/cm2-sr. Growth of antimonide-based devices on GaAs is desirable to the relative transparency of semi-insulating substrates throughout the infrared, and as semi-insulating GaSb substrates are not available. The growth of bulk GaSb on GaAs is explored through different techniques in order to confine relaxation due to lattice mismatch strain to the GaSb/GaAs interface. A low temperature nucleation technique with a thin GaSb wetting layer is found to have the best overall surface morphology, although screw dislocations are a prominent feature on all samples. The dislocations and overall surface roughness are not found to destructively impact the overall device quality, as four stage InAs/GaSb superlattice devices grown on GaAs substrates are found to have superior electroluminescent emission and external quantum efficiency compared to an identical device grown on a GaSb substrate due to the higher substrate transparency and superior thermal properties. Epitaxy on electronics growth techniques on GaAs integrated circuits are developed to bypass the hybridization process in light emitting diode development. Chips obtained from Quorvo, Inc. are found to endure ultra-high vacuum molecular beam epitaxy environment at higher temperatures with silicon nitride encapsulation, and a low temperature oxide removal technique is developed using an atomic hydrogen source. Chemical-mechanical polishing techniques are developed to create an “epi-ready” substrate surface. Ultimately, no photoluminescent emission is observed from InAs/GaSb superlattices grown on GaAs integrated circuits, although electroluminescent emission is still possible.

Innovation in photovoltaic technology may offer cost competitive options to other energy sources and become a viable solution for the energy and environmental challenges of the 21st century. One proposed innovative technology is based on all-silicon tandem cells, which are constructed using superlattices consisting of environmental friendly Si and its compounds. The well and barrier materials in superlattices are restricted to silicon and silicon oxide during the present study. Single crystalline Si/SiO2 quantum wells (QWs) have been fabricated by thermal oxidation of silicon-on-insulator (SOI) wafers. It is found that oxide properties in QWs are important for SOI wafers prepared by the SIMOX (Separation by Implantation of Oxygen) technique. However, QWs fabricated from SOI wafers prepared by the ELTRAN (Epitaxial Layer TRANsfer) approach show the effect of quantum confinement without evidence of strong oxide interfacial transitions. In these wafers, evidence for an apparently ordered silicon oxide was found with 1.92?atomic fringe spacing along the (110) direction of the Si structure and with the thickness about 17?along the (100) direction of the Si structure. Luminescence wavelength ranges are from 700nm to 918nm depending on the Si thickness. The luminescence measurements on other positions of the sample show peak and shoulder spectra, which are explained by monolayer fluctuations in QW thicknesses, previously observed in III-V QWs and II-VI QWs. Si/SiO2 superlattices are fabricated by RF magnetron sputtering. Si density is the key issue in crystallizing the superlattice. High-density Si layers crystallize either under high temperature furnace annealing or rapid thermal process annealing. However, low density Si would not crystallize even at high temperature. Crystallized nanocrystals in the Si layers are observed by high resolution transmission electron microscopy (HRTEM) when the Si layer is thicker than 3nm. When Si layers are thinner than 3nm, the Si layers are discontinuous and finally deteriorate into small nanocrystals. The suitability of such superlattices for surface passivation and antireflection coatings is reviewed. Initial attempts to fabricate heterojunctions between Si wafers and Si/SiO2 superlattices resulted in open circuit voltage of 252mV. However, it is expected that better results would be obtained if Si/SiO2 superlattices were fully crystallized.

La réduction de taille réalisée dans les hétérostructures mène à des états électroniques, fondamental et excité, largement différents de ceux du cristal en volume, et a ouvert la voie à une nouvelle génération de dispositifs optoélectroniques et photonique. Les super-réseaux diélectriques sont par exemple développés pour leurs propriétés non linéaires. Ces effets sont également trouvés dans des hétérostructures de semi-conducteur basées sur GaAs, qui a par lui-même les propriétés optiques non linéaires importantes. Dans la recherche de nouvelles sources optiques, l'anisotropie optique des super-réseaux de GaAs/AlAs-oxidé a été exploitée pour produire la conversion des fréquences optiques. Les super-réseaux de type GaAs/AlAs constituent donc un prototype pour la compréhension des structures artificielles, et leurs propriétés optiques ont été à fond étudiées expérimentalement et théoriquement. En particulier, la réduction de la symétrie cubique initiale de la structure diamant ou zinc-blende provoque une anisotropie optique. Le comportement des composents du tenseur diélectrique du super-réseaux GaAs/AlAs en fonction de la période de barrière/puits est une question qui suscite un très grand intérêt. Expérimentalement, on a observé une baisse remarquable de la biréfringence quand la période décroît. Pour étudier la réponse optique de ces systèmes, les détails de la structure électronique doivent être pris en considération, y compris des effets comme le repliement des bandes et le confinement. Une analyse simple en termes de particules indépendantes est insuffisante: les effets à plusieurs corps peuvent jouer un rôle crucial et tendent à être particulièrement importants quand l'échelle du système est réduite. Les calculs utilisant des pseudopotentiels semi-empiriques sur de super-réseaux de grande période ont récemment fourni une analyse détaillée des effets du repliement des bandes et du confinement. Néanmoins, il n'y avait aucun accord quantitatif avec l'expérience au sujet de la biréfringence statique, et ces calculs n'ont pas pu expliquer l'augmentation de cette quantité avec l'augmentation de la période du super-réseau même qualitativement. Aussi, nous avons calculé la biréfringence statique de super-réseaux (001) (GaAs)$_n$/(AlAs)$_n$ pour une période de barrière/puits variant de n=1 à n=8, en utilisant la théorie de la fonctionnelle de densité dépendante du temps (TDDFT). Nous confirmons les résultats des calculs semi-empiriques précédents basés sur un calcul à particules indépendantes, en exécutant des calculs ab initio dans la même approximation. Cependant, nous montrons que l'inclusion des effets de champs locaux change complètement les composants du tenseur diélectrique: la biréfringence théorique en maintenant en bon accord avec l'expérience. En fait, on obtient l'accord qualitatif, et quantitatif avec l'expérience, en incluant les effets de champs locaux. On montre en particulier que l'anisotropie des champs locaux explique les tendances expérimentales observées. Étonnamment, l'utilisation de l'approche de milieu effectif, ou le super-réseau est modelisé par un empilement de couches ayant la permittivité GaAs ou AlAs, est justifiée dans la direction d'empilement même pour les petites périodes, car les effets de champs locaux et de confinement s'annulent. Par contraste, les effets de confinement sont trouvés plus grands dans le plan perpediculaire à la direction d'empilement, et la théorie de milieu effectif est insuffisante.

<p>The role of the dimensionality and strain state of metallic lattices on the phase behavior of dissolved hydrogen was explored. Metallic superlattices with well defined hydrogen absorption potential on the nm scale, were utilized as test systems. The solubility isotherms of hydrogen in Fe/V(001), MoV/V(001), and Nb/W(110) superlattices were measured by a resistometric method, and the hydrogen-induced changes of the structures were measured by <i>in-situ</i> X-ray diffraction. In the V based superlattices, the long-ranged ordered bulk V hydride phase β-V₂H is absent, which is attributed to the finite-size of V lattice. The intrinsic strain-state of the hydrogen dissolving layers was found to have a strong effect on the interaction between metal and hydrogen as well as on the hydrogen-hydrogen (H-H) interaction. For low hydrogen content in the V layers, the compressive strain resulted in a strong enhancement of the H-H interaction, while a tensile strain appeared to diminish the H-H interaction. This is due to different site occupancy of hydrogen for different strain states, which depending on the relation between the symmetries of hydrogen induced global and local strain fields, gives rise to different elastic H-H interaction. Moderately strained V layers exhibited a strong attractive H-H interaction over a broad concentration range. In the concentration ranges where attractive H-H interaction was established, the hydrogen atoms appeared to be strongly correlated on a microscopic length scale. In the Nb based superlattices, the critical temperature for the α–α’ transition was found to be suppressed as a result of the clamping of the film plane by the film-substrate coupling. An exception from this could be noticed when the intrinsic compressive strain were reduced.</p>

The role of the dimensionality and strain state of metallic lattices on the phase behavior of dissolved hydrogen was explored. Metallic superlattices with well defined hydrogen absorption potential on the nm scale, were utilized as test systems. The solubility isotherms of hydrogen in Fe/V(001), MoV/V(001), and Nb/W(110) superlattices were measured by a resistometric method, and the hydrogen-induced changes of the structures were measured by in-situ X-ray diffraction. In the V based superlattices, the long-ranged ordered bulk V hydride phase β-V2H is absent, which is attributed to the finite-size of V lattice. The intrinsic strain-state of the hydrogen dissolving layers was found to have a strong effect on the interaction between metal and hydrogen as well as on the hydrogen-hydrogen (H-H) interaction. For low hydrogen content in the V layers, the compressive strain resulted in a strong enhancement of the H-H interaction, while a tensile strain appeared to diminish the H-H interaction. This is due to different site occupancy of hydrogen for different strain states, which depending on the relation between the symmetries of hydrogen induced global and local strain fields, gives rise to different elastic H-H interaction. Moderately strained V layers exhibited a strong attractive H-H interaction over a broad concentration range. In the concentration ranges where attractive H-H interaction was established, the hydrogen atoms appeared to be strongly correlated on a microscopic length scale. In the Nb based superlattices, the critical temperature for the α–α’ transition was found to be suppressed as a result of the clamping of the film plane by the film-substrate coupling. An exception from this could be noticed when the intrinsic compressive strain were reduced.

The preparation of layered magnets needs the knowledge of growth techniques which are focused on the growth of Fe/V(001) superlattices. Such films have been structurally investigated by X-rays reflectivity and diffraction. The magnetic investigations have been carried out by magneto-optic Kerr effect (MOKE), Superconducting Quantum Interference Device (SQUID) magnetometry and polarized neutron reflectivity (PNR). This latter technique has been used in cooperation with the Institute Laue Langvin (Grenoble, France) and Ruhr Universität (Bochum, Germany). The cross-over in universality class is shown in a series of layered magnets where a δ-doping layer of Fe has been embedded between two layers of Pd showing that the magnetization depends on the effective magnetic thickness of the polarized Pd. A model for the cross-over has been developed in terms of magnetic excitations. The interlayer exchange coupling (IEC) mediated by a non-magnetic spacer has been reviewed focusing the attention on the recent theoretical and experimental works based on Fe/V(001) superlattices. The IEC can be tailored at will by reversibly alloying of the spacer with H: this has been proved in Fe/V(001) double layers showing that in the two dimensional limit, the universality class is not affected by the coupling. The magnetic order-disorder transitions in Fe/V(001) superlattices do not seem to belong to any universality class. A phenomenological model which accounts for the effective coupling at the boundaries has been developed. The influence of the inherent ordering temperatures of single magnetic layers has been investigated in Fe/V(001) superlattices proving that the weakest ferromagnetic layer affects the overall magnetic ordering. A new kind of layered magnet has been developed to increase the effect of the boundaries. PNR measurements show that the universality class depends on which length-scale is investigated.

Graduation date: 1993

Photonic band gap materials, commonly referred to as photonic crystals (PCs), have been a topic of great interest for almost two decades due to their promise of unprecedented control over the propagation and generation of light. We report investigations of the optical properties of a new PC structure based upon a triangular lattice in which adjacent [i, j] rows of holes possess different properties, creating a superlattice (SL) periodicity. Symmetry arguments predicted and quot;band folding and quot; and band splitting behaviors, both of which are direct consequences of the new basis that converts the Brillouin zone from hexagonal (six-fold) to rectangular (two-fold). Plane wave expansion and finite-difference time-domain (FDTD) numerical calculations were used to explore the effects of the new structure on the photonic dispersion relationship of the SL PC. Electron beam lithography and inductively coupled plasma dry etching were used to fabricate 1 mm2 PC areas (lattice constant, a =358 nm and 480 nm) with hole radius ratios ranging from 1.0 (triangular) to 0.585 (r2/r1 = 73.26 nm/125.26 nm) on Silicon-on-insulator wafers. The effects of modifying structural parameters (such as hole size, lattice constant, and SL strength) were measured using the coupled resonant band technique, confirming the SL symmetry arguments and corroborating the band structure calculations. Analysis of the dispersion contours of the static SL (SSL) PC predicted both giant refraction (change in beam propagation angle of 110 for an 8 change in incident angle) and superprism behavior (change in beam propagation angle of 108 for a 12% change in normalized frequency) in these structures. Dynamic control of these refraction effects was also investigated by incorporating electro-optic and nonlinear materials into the SSL PC structure. Wave vector analyses on these structures predicted a change in beam propagation angle and gt;96 when the refractive index inside of the holes of the structure changed from n=1.5 to 1.7. Through this investigation, the first successful measurement of the band folding effect in multidimensional PCs as well as the first explicit measurement of the dielectric band of a 2D PC were reported. In addition, the SL PCs impact on new opto-electronic devices was explored.

The refraction properties of photonic crystal lattices offers methods to control the beam steering of light through use of non-linear dispersion contours. In this thesis new photonic crystal structures, such as the square and triangular superlattices, that provide novel refractive properties are analyzed. The property difference between rows in these structures is the hole radius Δr. The difference in hole sizes leads to observation of the superlattice effect, that is, a change in the refractive index Δn between opposite rows of holes. The index difference becomes a function of the size of the smaller r2 hole area or volume due to the addition of the higher index background material compared to the larger r1 holes. The difference in hole radii Δr = r1 - r2 is referred to as the static superlattice strength and is designated by the ratio of r2/r1. The superlattice strength increases as the ratio of r2/r1 decreases. The hole size modulation creates modified dispersion contours that can be used to fabricate advanced beam steering devices through the introduction of electro-optical materials and a controlled bias. A discussion of these superlattice structures and their optical properties will be covered, followed by both static and dynamic tunable device constructions utilizing these designs. Also, static tuning of the devices through the use of atomic layer deposition, as well as active tuning methods utilizing liquid crystal (LC) infiltration, sealed LC cells, and the addition of electro-optic material will be discussed. Also in this thesis we present designs to implement a simpler demonstration of cloaking, the carpet cloak, in which a curved reflective surface is compressed into a flat reflective surface, effectively shielding objects behind the curve from view with respect to the incoming radiation source. This approach eliminates the need for metallic resonant elements. These structures can now be fabricated using only high index dielectric materials by the use of electron beam lithography and standard cleanroom technologies. The design method, simulation analysis, device fabrication, and near field optical microscopy (NSOM) characterization results are presented for devices designed to operate in the 1400-1600nm wavelength range. Improvements to device performance by the deposition/infiltration of linear, and potentially non-linear optical materials, were investigated.

Thesis (Ph. D.)--University of Missouri-Columbia, 2000. / Typescript. Vita. Includes bibliographical references (leaves 139-143). Also available on the Internet.