NDLTD Global ETD Search
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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.

Search results

Showing 1 to 4 of 4 (0.01 seconds)
1

Processing and Properties of Ultrathin Perovskite Manganites

Johnsson, Peter January 2003 (has links)
No description available.
colossal magnetoresistance
thin films
thickness dependence
2

Processing and Properties of Ultrathin Perovskite Manganites

Johnsson, Peter January 2003 (has links)
No description available.
colossal magnetoresistance
thin films
thickness dependence
3

Plastic Relaxation In Single InᵡGa₁₋ᵡN/GaN Epilayers Grown On Sapphire

Song, T.L., Chua, Soo-Jin, Fitzgerald, Eugene A., Chen, Peng, Tripathy, S. 01 1900 (has links)
Plastic relaxation was observed in InᵡGa₁₋ᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer thickness. Plastic relaxation in this material system reveals that there is no discontinuous relaxation at critical thickness and once a layer starts to relieve, it follows the same strain-thickness dependence, unconstrained by the original misfit until the material system work hardens. From x-ray diffraction calibration, the in-plane and normal relaxation constants KP0 and KN0 for the InᵡGa₁₋ᵡN/GaN grown on sapphire were found to be −0.98 ± 0.03 and +0.51 ± 0.03 nm, respectively. / Singapore-MIT Alliance (SMA)
plastic relaxation
InᵡGa₁₋ᵡN/GaN Epilayers
sapphire
strain-thickness dependence
semiconductor material systems
relaxation constants
4

Anchoring Transitions of Liquid Crystals on Large Angle Deposited SiOx Thin Films

Chen, Cheng 21 November 2006 (has links)
No description available.
Physics, General
Liquid crystal alignment
SiOx
inorganic alignment layer
anchoring transition
temperature dependence
thickness dependence

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