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Processing and Properties of Ultrathin Perovskite ManganitesJohnsson, Peter January 2003 (has links)
No description available.
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Processing and Properties of Ultrathin Perovskite ManganitesJohnsson, Peter January 2003 (has links)
No description available.
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Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On SapphireSong, T.L., Chua, Soo-Jin, Fitzgerald, Eugene A., Chen, Peng, Tripathy, S. 01 1900 (has links)
Plastic relaxation was observed in InᵡGa₁âᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer thickness. Plastic relaxation in this material system reveals that there is no discontinuous relaxation at critical thickness and once a layer starts to relieve, it follows the same strain-thickness dependence, unconstrained by the original misfit until the material system work hardens. From x-ray diffraction calibration, the in-plane and normal relaxation constants KP0 and KN0 for the InᵡGa₁âᵡN/GaN grown on sapphire were found to be â0.98 ± 0.03 and +0.51 ± 0.03 nm, respectively. / Singapore-MIT Alliance (SMA)
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Anchoring Transitions of Liquid Crystals on Large Angle Deposited SiOx Thin FilmsChen, Cheng 21 November 2006 (has links)
No description available.
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