In the past few decades, Si-based CMOS technology is approaching to its physical quantum limit by scaling down the gate length and gate oxide thickness to achieve higher drive current for low power and high speed application. High k/III-V stack provides an alternative solution because III-V based metal-oxide-semiconductor (MOS) devices have higher drive current due to the higher electron mobility than silicon. Also high k oxides lower the gate leakage current significantly due to larger thickness under the same equivalent oxide thickness (EOT) compared with SiO₂ beyond the 22 nm node. The main obstacle for high k/III-V based MOSFETs is the lack of high quality, thermodynamically stable insulators that passivate the interface, which is also the main driving force in the research area of high k/III-V stack. One of the main focuses of this dissertation is developing a fabrication process flow to lower the interface trap density to enhance the performance of MOSFETs with high k oxides on III-V substrates. Also, an emerging memory device with SiO[subscript x] is also developed. This device can be electrically switched between a high-resistance state (HRS, or OFF-state) and a low-resistance state (LRS, or ON-state). Also it shows high potential for next generation nonvolatile memories due to its small cell area, fast write/erase time, low write voltage, good endurance and scalability. The other main focuses of this dissertation is studying the electroforming, set/reset voltages and passivation issue in this resistive random access memory (RRAM or ReRAM). The first part of this dissertation is about lowering the interface trap density of high k/III-V stack by using a thin layer of Al₂O₃ or LaAlO₃. ALD Al₂O₃/HfO₂ bi-layer gate oxide with different Al₂O₃ thickness (0, 5, 10Å) was deposited. Also ALD LaAlO₃/HfO₂ bi-layer gate oxide with different LaAlO₃ thickness (0, 5, 10, 20, 30, 42Å) was deposited. The total EOT of the bi-layer was maintained at ~1.8nm. Also single La[subscript x]Al[subscript 1-X]O (X =0.25, 0.33, 0.5, 0.66, 0.75) gate dielectric with different La doping level was deposited (EOT=2.5±0.4nm). Device characteristics are compared by using different thickness of interfacial layer. The second part of this dissertation is about F incorporation into high k oxide by using SF₆ plasma. The effect of SF₆ plasma treatment of HfO₂ on III-V substrates is demonstrated. Also effect of different plasma power and different treatment time of SF₆ plasma is studied to optimize plasma conditions. High k bilayer (Al₂O₃/HfO₂) is also used to further improve the device performance by better interface passivation with Al₂O₃. HfO₂ gate oxide dielectric is also engineered using SF₆ plasma treatment to incorporate more F. The third part is a study of III-V tunneling FET using In[subscript 0.7]Ga[subscript 0.3]As p-n junction. The device performance with different n doping concentration is compared. Higher n doping concentration will increase the drive current by reducing the tunneling width while too higher n doping concentration results in tunneling in the middle of p-n junction and significantly increase the subthreshold swing. The forth part is the electroforming, set/reset and passivation study of ReRAM device with SiO[subscript x]. Different methods to reduce the electroforming voltage are developed. Set/reset process is also studied and a possible model is proposed to explain the set/ reset process. A new device structure without sidewall edge is studied for passivation and application in air. The final part is the summary of Ph.D work and also suggestions for future work are discussed. / text

Kyoto University (京都大学) / 0048 / 新制・課程博士 / 博士(工学) / 甲第17161号 / 工博第3651号 / 新制||工||1554(附属図書館) / 29900 / 京都大学大学院工学研究科電子工学専攻 / (主査）教授 藤田 静雄, 教授 髙岡 義寛, 教授 川上 養一 / 学位規則第4条第1項該当

Ce travail de thèse concerne la réalisation et l'analyse des propriétés optiques de nanocristaux de silicium. Ces objets de taille nanométrique possèdent des propriétés optiques remarquables, en particulier de photoluminescence. Les propriétés de confinement quantique qui les caractérisent permettent d'obtenir un signal de luminescence intense dans le domaine du visible. Des composants optoélectroniques et photoniques ont été envisagés à base de nanocristaux de silicium. Les raisons physiques du fort signal de luminescence en revanche sont encore mal comprises. Les nanocristaux de silicium sont élaborés par évaporation. L'élaboration et le recuit thermique de multicouches SiO/SiO2 permet d'obtenir des nanocristaux de silicium de diamètre moyen bien contrôlé. Ceux-ci sont issus de la démixtion de la couche de SiO selon la réaction SiOx --> Si + SiO2. Le contrôle du diamètre des nanocristaux de silicium permet de maîtriser la région spectrale de luminescence dans la région du visible.La première partie de ce travail de thèse vise à isoler un ou quelques nanocristaux de silicium. L'objectif est de remonter à la largeur homogène de ces nano-objets. Dans un premier temps, une étude centrée sur le matériau SiOx est réalisée afin de réduire la densité surfacique de nanocristaux de silicium. Dans un deuxième temps, des moyens de lithographie ultime sont mis en oeuvre afin de réaliser des masques percés de trous de diamètres de l'ordre de la centaine de nanomètre. Des expériences de spectroscopie optique sont réalisées sur ces systèmes.La deuxième partie de ce travail vise à contrôler l'émission spontanée de lumière issue des nanocristaux de silicium. Ceci se fait en couplant les modes électroniques aux modes optiques confinés d'une microcavité optique. Le manuscrit détaille les moyens développés afin d'obtenir une microcavité optique dont les modes optiques puissent se coupler efficacement aux nanocristaux de silicium. Les propriétés optiques de ces systèmes sont finalement analysées. / This work concerns the implementation and analysis of optical properties of silicon nanocrystals. These nanoscaled objects have remarkable optical properties, especially in photoluminescence. The properties of quantum confinement that characterize them allow obtaining an intense luminescence signal in the visible range. Optoelectronic and photonic devices have been proposed based on silicon nanocrystals. The physical reasons of the strong luminescence signal, however, are still poorly understood. The silicon nanocrystals are prepared by evaporation. The preparation and thermal annealing of multilayers SiO/SiO2 leads to silicon nanocrystals with a well controlled average diameter. They are created during the demixing of the SiO layer by the reaction SiO ? Si + SiO2. The control the diameter of the silicon nanocrystals influences directly the spectral region of luminescence in the visible region.The aim of first part of this work is to isolate one or a few silicon nanocrystals. The intent is to trace the homogeneous width of these nano-objects. Initially, a study focusing on the SiOx material is conducted to reduce the surface density of silicon nanocrystals. In a second step, lithography is implemented to make masks with holes with diameters of about one hundred nanometers. Optical spectroscopy experiments were performed on these systems.The second part of this work aims controlling the spontaneous emission of light from silicon nanocrystals. This is done by coupling the electronic transmission to optical modes confined in an optical microcavity. The manuscript describes the methods developed to obtain an optical microcavity whose optical modes can be coupled effectively to the silicon nanocrystals. The optical properties of these systems are finally analyzed

Silicon-based electrodes are the most promising negative electrodes for the next generation high capacity lithium ion batteries (LIB) as silicon provides a theoretical capacity of 3579 mAh g-1, more than 10 times higher than that of the state-of-the-art graphite negative electrodes. However, silicon-based electrodes suffer from poor cycle life due to large volume expansion and contraction during lithiation/delithiation. In order to improve the electrochemical performance a number of strategies have been employed, such as dispersion of silicon in active/inactive matrixes, devising of novel nanostructures, and various coatings for protection. Amongst these strategies, silicon-carbon coating based composites are one of the most promising because carbon coating is comparatively flexible, easy to obtain, and scalable with various industrial processes. Low cost and renewable lignin, which constitutes up to 30% dry mass of the organic carbon on earth, is widely available from paper and pulp mills which produce lignin in excess of 50 million tons annually worldwide. It is a natural bio-polymer with high carbon content and highly interconnected aromatic network existing as a structural adhesive found in plants. Generally burnt for energy on site, lignin is gradually finding its way into high value-added products such as precursor for carbon fibers, active material in negative electrodes, and raw material for supercapacitors. This dissertation focuses on high performance silicon-based negative electrodes utilizing lignin as the carbon precursor for conductive additive, binder, and carbon coating. To my knowledge this is one of the first works attempting to utilize and summarize the performance of lignin in silicon-based negative electrodes. The first part of the dissertation shows that silicon-lignin composites treated at 800 ºC displayed good capacity and cycling performance. The second part goes to generalize the effect of temperature on silicon-lignin composites and shows that a low temperature treatment granted an electrode with superior performance and cycling properties owing to the preservation of polymeric properties of lignin. The final part of the dissertation discusses the current research trends in SiOx based negative electrodes and extends lignin to that field. This dissertation will, hopefully, provide knowledge and insight for fellow researchers wishing to utilize lignin or other renewable resources in devising advanced battery electrodes.

Les cellules solaires photovoltaïques organiques et les micro-accumulateurs au lithium sont constitués d'éléments sensibles à l'atmosphère. Afin de leur assurer une durée de vie raisonnable à l'air, il faut les protéger avec des matériaux barrières, ayant des perméabilités à la vapeur d'eau et à l'oxygène très faibles. La solution envisagée pour obtenir de tels matériaux a été le développement de couches minces, tels que l'oxyde et le nitrure de silicium, déposées par PECVD. Dans une première partie, deux méthodes de caractérisation des propriétés barrières ont été mises en place spécialement pour la caractérisation de faibles taux de perméation : le « test lithium » et la mesure de perméation à partir d'un perméamètre à haute sensibilité. Dans une seconde partie, une étude des matériaux en monocouche et en multicouche a été effectuée. Un système performant a été obtenu par l'empilement multicouche d'un même matériau SiOx, où un traitement plasma après chacune des couches permet de créer des interfaces. L'étude de ce post-traitement a permis la compréhension des phénomènes d'interfaces et l'influence de ceux-ci sur la perméation. Cette étude a également permis de proposer un modèle de diffusion des molécules de gaz à travers un empilement multicouche.

Les systèmes sur puce comportant des fonctions optiques ont un vif intérêt pour les futures générations de systèmes embarqués, les telecommunications, l'instrumentation. La faisabilité d'une source silicium compatible avec la technologie CMOS reste à ce jour un verrou majeur pour ouvrir la voie à des systèmes optoélectroniques intégrés. L'utilisation des nanocristaux de silicium dans une matrice de SiO2 est actuellement une voie prometteuse visant à lever ce verrou. L'objectif de cette thèse est d'étudier la faisabilité de sources émettant dans le visible/proche infrarouge à base de nanocristaux de silicium, en explorant les potentialités de dépôts LPCVD (Low Pressure Chemical Vapor Deposition). En partant de l'étude des propriétés des nanocristaux, une approche bottom-up a été choisie pour la réalisation des composants de test. Un procédé d'élaboration du matériau actif, compatible avec la technologie CMOS, a été mis au point et nous a permis d'obtenir de façon reproductible des nanocristaux avec les propriétés souhaitées. Les mécanismes d'émission lumineuse ont été étudiés et corrélés avec les propriétés structurales et électriques. Une émission lumineuse intense a été obtenue sous excitation optique. L'obtention d'électroluminescence nécessite quant à elle une optimisation spécifique tant au niveau matériau qu'au niveau procédé technologique. A cette fin, plusieurs voies ont été explorées nous conduisant à établir le compromis entre propriétés optiques et électriques. Au terme de cette étude, nous avons évalué les avantages et inconvénients de cette technique d'élaboration et proposons des solutions pour parvenir à fabriquer un dispositif électroluminescent fonctionnel.

<p>Kraftelektronik AB i Växjö tillverkar en spänningslikriktare som kan konfigureras enligt kundens önskemål. Antalet parametrar som kan ändras uppgår till över 300 stycken och måste i nuläget konfigureras manuellt av en operatör.</p><p>För att förenkla önskade de att vi utvecklade ett program så konfigurationen kunde utföras i Windows-miljö.</p> / <p>Kraftelektronik AB in Växjö manufactures a power rectifier which can be configured according to a customer’s wish. The number of parameters which can be changed reach above 300 and must today be configured manually by an operator.</p><p>To simplify they wished that we developed a program so the configuration could be carried out in a Windows environment.</p>

SiOx nanowires grown through the VLS mechanism were electrophoretically deposited on top of Au electrodes. GOx was immobilized using APTES and the EDC-NHS chemistry. Cyclic Voltammetry was used as the method to characterize the electrodes through their processing steps, and CV was also used to detect glucose in a PBS based solution. Ferro-Ferri Cyanide couple was used as the mediator.

Submitted by RAFAEL PARRA RIBEIRO null (rafa_parra1988@yahoo.com.br) on 2018-01-11T11:50:55Z No. of bitstreams: 1 Dissertação Versão FINAL 3.0.pdf: 3444946 bytes, checksum: 0a56c18e1734b605a90aea40283cc295 (MD5) / Approved for entry into archive by Maria Marlene Zaniboni null (zaniboni@bauru.unesp.br) on 2018-01-11T13:13:15Z (GMT) No. of bitstreams: 1 ribeiro_rp_me_bauru.pdf: 3444946 bytes, checksum: 0a56c18e1734b605a90aea40283cc295 (MD5) / Made available in DSpace on 2018-01-11T13:13:15Z (GMT). No. of bitstreams: 1 ribeiro_rp_me_bauru.pdf: 3444946 bytes, checksum: 0a56c18e1734b605a90aea40283cc295 (MD5) Previous issue date: 2017-08-16 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) / Devido às suas propriedades mecânicas, soldabilidade e baixo custo, o aço carbono é um material amplamente utilizado nos mais diversos setores. Entretanto, o aço carbono é facilmente oxidado quando exposto ao ambiente. Para evitar esse problema, alguns trabalhos sugerem o desenvolvimento de revestimentos protetivos utilizando técnicas de deposição a plasma baseadas no composto hexametildisiloxano, HMDSO. A partir deste composto podese obter desde estruturas organosilicones até as inorgânicas pela alteração dos parâmetros de deposição. Revestimentos tipo óxido de silício são mais resistentes à corrosão que os organosilicones, porém sua estabilidade física é menor. Com o objetivo de associar as propriedades favoráveis de ambos os tipos de revestimentos, investigou-se, no presente trabalho, a possibilidade de revestir o aço carbono com sistemas bicamadas SiOx/SiOxCyHz através da combinação de metodologia de deposição e oxidação em plasmas de baixa pressão. Para tanto, filmes do tipo SiOxCyHz foram depositados a plasma de mistura de HMDSO (70%), O2 (20%) e Ar (10%) excitado por radiofrequência (150 W). A pressão total da atmosfera de deposição foi de 20 Pa. Os filmes foram depositados por 30 min e, posteriormente, expostos a plasmas de O2 (3,3 Pa, 10-300 W, 60 min) com o objetivo de criar uma camada superficial inorgânica. Foram investigados os efeitos da potência de excitação do plasma de O2 na espessura de camada, estrutura química e composição elementar das amostras. Avaliou-se também o efeito da potência do plasma de oxidação nas propriedades de barreira do revestimento depositado sobre aço carbono. Filmes como-depositados foram caracterizados como organosilicones. A exposição ao plasma de oxigênio foi observada remover hidrogênio, carbono e grupos metil da estrutura transformando-a em óxido de silício, sendo, todavia, o grau de conversão e a espessura da camada convertida fortemente dependentes da potência do plasma de oxidação. A resistência do sistema preparado sobre o aço carbono à corrosão foi observada depender da espessura final da camada e também da conectividade da estrutura convertida em sílica mais que do grau de conversão. A condição de tratamento eleita como ótima neste trabalho foi a conduzida com 50 W de potência por criar uma camada superficial inorgânica fina, compacta, com uma estrutura superficial similar a da sílica além de preservar a espessura do filme e aumentar as propriedades de barreira do sistema. / Due to its mechanical properties, welding and low cost, carbon steel is a material widely used in several sectors. However, carbon steel is easily oxidized when exposed to the environment. To avoid this problem, some work suggests the development of protective coating using plasma deposition techniques based on the compound hexamethyldisiloxane, HMDSO. From this compound it is possible to obtain from organosilicones structures to inorganic by changing the parameters of deposition. Silicon oxide type coatings are more resistant to corrosion than organosilicones, but their physical stability is lower. With the objective of associating the favorable properties of both types of coatings, the present work investigated the possibility of coating the carbon steel with SiOx/SiOxCyHz bilayer systems through the combination of deposition and oxidation methodology in low pressure plasmas. For that, SiOxCyHz films were deposited in a mixture plasma of HMDSO (70%), O2 (20%) and Ar (10%) excited by radiofrequency (150 W). The total pressure of the atmosphere of deposition was 20 Pa. The films were deposited for 30 min and subsequently exposed to O2 plasmas (3.3 Pa, 10-300 W, 60 min) to create an inorganic surface layer. The effects of the excitation power of the O2 plasma on the layer thickness, chemical structure and elemental composition of the samples were investigated. The effect of the oxidation plasma power was also evaluated in the barrier properties of the coating deposited on carbon steel. As-deposited films were characterized as organosilicones. Exposure to oxygen plasma was observed to remove hydrogen, carbon and methyl groups from the structure transforming it into a silicon oxide, however, the degree of conversion and the thickness of the converted layer is strongly dependent on the power of the oxidation plasma. The corrosion resistance of the system prepared on carbon steel was observed to depend on the final thickness of the layer and also on the connectivity of the structure converted to silica rather than the degree of conversion. The treatment condition chosen as optimal in this work was the one conducted with 50 W of power by creating a thin, compact, inorganic surface layer with a silica-like surface structure in addition to preserving the film thickness and increasing the barrier properties of the system. / 1560670 / 1545023

Kraftelektronik AB i Växjö tillverkar en spänningslikriktare som kan konfigureras enligt kundens önskemål. Antalet parametrar som kan ändras uppgår till över 300 stycken och måste i nuläget konfigureras manuellt av en operatör. För att förenkla önskade de att vi utvecklade ett program så konfigurationen kunde utföras i Windows-miljö. / Kraftelektronik AB in Växjö manufactures a power rectifier which can be configured according to a customer’s wish. The number of parameters which can be changed reach above 300 and must today be configured manually by an operator. To simplify they wished that we developed a program so the configuration could be carried out in a Windows environment.