The broad theme of the present research investigation is on the preparation and characterization of the ultra thin films. The emerging field of nano science and technology demands the realization of different materials in nanometer dimension and a comprehensive understanding of their novel properties. Especially, the properties of the semiconducting materials in the nano dimensions are quite different from their bulk phase. A phase transition from semimetalic to semiconducting nature occurs at a thickness < 5nm of Sb ultra thin films. These facts emphasize the need for preparing these materials as nano layers and studying their properties as a function their size. Among the various characterization methods available to study the structure and the interfaces, Raman spectroscopy has proved to be a useful technique. In addition to revealing the structural information, Raman spectroscopy can bring out the quantum size effects in the lattice vibrational spectra of lower dimensional solids, stress state of the film in the initial growth stages, chemical nature of materials etc. Raman spectroscopy studies on the quantum structure of Ge and Sb are limited. This is attributed to the two serious limitations of the conventional backscattering of Raman signal. 1. The back scattered Raman signal intensity from the ultra thin layer could be below the detection limit. 2. The lower penetration depth of the lasers could inhibit the information from the buried layers. These limitations could be overcome to a major extent by employing an optical interference technique called IERS. This is basically an anti-reflection structure consisting minimum of three layers. These three layers are essential for achieving the interference conditions. The thicknesses of each layer were calculated using a matrix method. IERS structure consists of 1. A reflecting layer at the bottom of the stack (Platinum or Aluminum) 2. The second layer which is grown above the reflecting layer is a transparent dielectric layer, which introduces the necessary phase shift and hence it is called phase layer.(SiO2 or CeO2) 3. The top ultra thin layer which is to be investigated (Ge or Sb), is grown over the dielectric film and it is the layer which absorbs the most of the incident exciting light and it is called the absorbing layer. In this trilayer structure the thickness of the phase layer and the absorbing layer are adjusted in such a way that the light reflected from the air-ultra thin layer interface and the dielectric-reflector interface are equal in amplitude but opposite in phase. This leads to the destructive interference and a perfect anti-reflection condition is achieved. This enhances the near surface local field and results in the enhanced Raman signal. Regarding the reflection layer, thermally evaporated Al films were used. But the surface studies revealed a large surface roughness of 2.7nm for area of 2 µm×2µm. Also Al is known to react with oxygen and formation of an oxide layer is favored. In an effort to overcome these problems, a platinum layer was chosen instead of Al as a reflecting layer. Dual ion beam sputter deposition was employed to prepare the platinum films and to study the surface property of the films prepared at different secondary ion current density. Thus the process parameters to get the Pt film with the required surface properties were optimized. To prepare the required phase layer, optical thin films of Ceria were used. The optical and structural property of ceria is found to be sensitive to the process parameters. Hence a new deposition technique for preparing the CeO2 thin films was adopted. This technique is called Dual ion beam Sputter Deposition (DIBSD). This technique involves, two ion sources (Kaufman type). One source is used to sputter the target, which is called the primary ion source and the other one is used to assist the growing film, which is called the secondary ion source. Both argon and oxygen were fed into the secondary ion source and oxygen ions in the mixture of the gases (Ar +O2) react with the growing film and the oxygen stoichiometry in the film is maintained. Also the secondary ion bombardment of the growing film helps in the densification and it leads to the increase in the refractive index of the ceria films. The films were found to grow with a preferential orientation along (111) direction. The optical properties of the films were studied by using the transmission spectra of the films from the spectrophotometer. Powder X-Ray diffraction, and Raman spectroscopy, were employed to study the structural properties. Atomic Force Microscopy was used to examine the surface topography and to estimate the surface statistics. A stress free ceria film with a high refractive index of 2.36 at 600nm was prepared for a secondary ion beam current density of 150µA/cm2 and a beam energy of 150 eV. Raman spectra and X-ray diffraction data of these films have revealed the formation of point defects in these films as a function of secondary ion current density. Germanium (Ge) ultra thin layers were prepared by using Ion Beam Sputter Deposition (IBSD) as this technique has a good control over the rate of deposition apart from various other advantages. The Ge ultra thin films were prepared on the multilayer stacks with Al or Pt as a reflecting layer. The germanium films were prepared for the various thicknesses ranging from 1-10 nm. These films were prepared on the multilayer stack of reflecting layer and phase layer. The films were prepared for the different substrate temperatures from 40 °C to 300 °C. The films thus prepared have been analyzed by Interference Enhanced Raman Spectroscopy (IERS) for the structural and quantum size effects, by RBS for the thickness and to study interface diffusion, and Atomic Force Microscopy (AFM) for the analysis of nano structure of the grown films and also for the surface statistics. The thickness of the Ge films was found to be same as that had been calculated from the rate of deposition of the films. The films showed increase in the grain sizes with increase in the thickness of the films. The nanostructure of the films from AFM images confirms this observation. IERS of the films shows the transition from the compressive to stress free nature of the film for the nominal thickness of 1 & 2 nm. The quantum size effects of the films show the asymmetric broadening and peak shift and these observations were studied using the spatial correlation model. The TEM studies on the samples with Pt as a reflecting layer show influence of the underlying layer of CeO2 by the formation Moiré fringes. Antimony (Sb) films were prepared for the different thicknesses (3-10nm) and at different substrate temperatures (40 °C - 200 °C) on the Pt/CeO2 multilayer stacks as the absorbing layer. IERS studies on the films were performed and the results are as follows. Sb films show crystallization with increase in thickness from 3nm to 4nm. The films show amorphous to crystalline transition for the substrate temperature of 200 °C. Quantum size effects on the samples due to the phonon confinement were analyzed by the spatial correlation model. The atomic force microscopic measurements for the nanostructural information on the samples showed that the grain sizes of the films increase with increase in the thickness. Also the surface morphology shows a definite change in the features for the transition of amorphous to crystallization phase. Chapter 1 introduces the importance of Ge and Sb in the present day technologies. The current state of research on these two materials has been discussed. The importance of ceria and Pt films has been highlighted in the context of IERS and for the applications elsewhere. The advantages and disadvantages of ion beam sputter deposition have been described. The importance of Raman spectroscopy as a characterization tool for the nano structures has been shown in this chapter along with an introduction on Raman spectroscopy. Also, the importance of the other complimentary characterization techniques has been discussed. Chapter 2 presents the experimental details used to deposit and characterize the thin films. Details of IBSD and DIBSD processes are given. The characterization pertaining to structural, surface, optical and compositional properties are dealt in detail. Method to compute the optical constants of a transparent film is also given. Chapter 3 presents the properties of reflecting layers. Structural, surface and the compositional (presence of Ar ion) properties of the DIBSD platinum thin films are presented. Chapter 4 presents the optical, structural and surface properties of DIBSD ceria thin films as a function of process parameters. Chapter 5 deals with the growth and Raman analysis of ultra thin Ge films with Al and Pt as reflecting layers. Chapter 6 deals with the growth and Raman analysis of ultra thin Sb films. Chapter 7 gives the summary of the thesis and the future scope of the work.

We use different methods to deposit Ti thin film on the ITO glass substrate. Under the circumstances of using fixed concentration of electrolyte, changing anodic time, and applying voltage, we are able to use anodic method to make ordered nano TiO2 thin film,of which the smallest pore size is 18nm and the thickness is 4500

¡@¡@Because of the poly-si thin film transistor have the advantage of high mobility, it can improve the analysis for the flat plan display. Using the above advantage can combine the integrated circuit as control IC and memory on the small panel to reduce the number between the switch circuits and the outside contacts. These precise circuits must be considering the photo current¡Bthermal effects and the parasitical capacitance more due to the influence of these precise circuits is more serious than the switch circuits. In my thesis, the research of the electrical characteristics of the newest excimer laser crystallize coplane poly-si thin film transistors ,and using the device length with width is 128um/6um and 128um/16um can be extracted that the environment of the facing illumination have the photo-leakage current than none illumination about four orders, and the photo-leakage current is not consider with any gate voltage. ¡@¡@With the discussion of the capacitance, the main point of my researches is to change different conditions to extract the gate to source capacitance (Cgs). In addition, the slight carriers may effect the devices with the high mobility system on panel (SOP) technology error, the temperature must be considered. ¡@¡@We find the mobility is bigger at the environment of the temperature is 300K than the environment of the temperature is 100K when the device work in the linear region and the on current is lower at the environment of the temperature is 300K than the environment of the temperature is 100K when the device work in the saturation region. Using some references and some models as the concepts can analysis some phenomenons I refer to above.

The objective of this investigation was to develop micro/nano-scale temperature sensors for measuring surface temperature transients in multi-phase flows and heat transfer. Surface temperature fluctuations were measured on substrates exposed to phase change processes. Prior reports in the literature indicate that these miniature scale surface temperature fluctuations can result in 60-90 percent of the total heat flux during phase change heat transfer. In this study, DTS (Diode Temperature Sensors) were fabricated with a doping depth of ~100 nm on n-type silicon to measure the surface temperature transients on a substrate exposed to droplet impingement cooling. DTS are expected to have better sensor characteristics compared to TFTs (Thin Film Thermocouples), due to their small size and faster response (which comes at the expense of the smaller operating temperature range). Additional advantages of DTS include the availability of robust commercial micro fabrication processes (with diode and transistor node sizes currently in the size range of ~ 30 nm), and that only 2N wire leads can be used to interrogate a set of N x N array of sensors (in contrast thermocouples require 2 N x N wire leads for N x N sensor array). The DTS array was fabricated using conventional semi-conductor processes. The temperature response of the TFT and DTS was also calibrated using NIST standards. Transient temperature response of the DTS was recorded using droplet impingement cooling experiments. The droplet impingement cooling experiments were performed for two different test fluids (acetone and ethanol). An infrared camera was used to verify the surface temperature of the substrate and compare these measurements with the temperature values recorded by individual DTS. PVD (Physical Vapor Deposition) was used for obtaining the catalyst coatings for subsequent CNT synthesis using CVD (Chemical Vapor Deposition) as well as for fabricating the thin film thermocouple (TFT) arrays using the "lift-off" process. Flow boiling experiments were conducted for three different substrates. Flow boiling experiments on bare silicon wafer surface were treated as the control experiment, and the results were compared with that of CNT (Carbon Nano-Tube) coated silicon wafer surfaces. Similar experiments were also performed on a pure copper surface. In addition, experiments were performed using compact condensers. Micro-scale patterns fabricated on the refrigerant side of the compact heat exchanger were observed to cause significant enhancement of the condensation heat transfer coefficient.

A main driving force behind the recent years’ immense interest in nanoscience and nanotechnology is the possibility of achieving new material properties and functionalities within, e.g., material physics, biomedicine, sensor technology, chemical catalysis, energy storing systems, and so on. New (theoretical) possibilities represent, in turn, a challenging task for chemists and physicists. An important feature of the present nanoscience surge is its strongly interdisciplinary character, which is reflected in the present work. In this thesis, nanocrystals and thin films of magnetic and ferroelectric metal oxides, e.g. RE2O3 (RE = Y, Gd, Dy), GdFeO3, Gd3Fe5O12, Na0.5K0.5NbO3, have been prepared by colloidal and sol-gel methods. The sizes of the nanocrystals were in the range 3-15 nm and different carboxylic acids, e.g. oleic or citric acid, were chemisorbed onto the surface of the nanoparticles. From FT-IR measurements it is concluded that the bonding to the surface takes place via the carboxylate group in a bidentate or bridging fashion, with some preference for the latter coordination mode. The magnetic properties of nanocrystalline Gd2O3 and GdFeO3 were measured, both with respect to magnetic resonance relaxivity and magnetic susceptibility. Both types of materials exhibit promising relaxivity properties, and may have the potential for use as positive contrast enhancing agents in magnetic resonance imaging (MRI). The nanocrystalline samples were also characterised by transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), and quantum chemical calculations. Thin films of Na0.5K0.5NbO3, GdFeO3 and Gd3Fe5O12 were prepared by sol-gel methods and characterized by x-ray powder diffraction (XRPD) and scanning electron microscopy (SEM). Under appropriate synthesis conditions, rather pure phase materials could be obtained with grain sizes ranging from 50 to 300 nm. Magnetic measurements in the temperature range 2-350 K indicated that the magnetization of the perovskite phase GdFeO3 can be described as the sum of two contributing terms. One term (mainly) due to the spontaneous magnetic ordering of the iron containing sublattice, and the other a susceptibility term, attributable to the paramagnetic gadolinium sublattice. The two terms yield the relationship M(T)=M0(T)+χ(T)*H for the magnetization. The garnet phase Gd3Fe5O12 is ferrimagnetic and showed a compensation temperature Tcomp ≈ 295 K.

Tantalum diffusion barrier coatings were investigated as a way to improve the conversion efficiency of CIGS (copper indium gallium diselenide) solar cells.  Tantalum coatings were deposited upon silicon and stainless steel foil substrates using direct current magnetron sputtering (DcMS) and high power impulse magnetron sputtering (HiPIMS).  The coatings were characterized using scanning electron microscopy (SEM).  Cross-sectional scanning electron micrographs revealed that the HiPIMS coatings appeared denser than the DcMS coatings.

A novel polymer semiconductor with side chains thermally cleavable at a low temperature of 200 °C was synthesized. The complete cleavage and removal of the insulating 2-octyldodecanoyl side chains were verified with TGA, FT-IR, and NMR data. The N-H groups on the native polymer backbone are expected to form intermolecular hydrogen bonds with the C=O groups on the neighboring polymer chains to establish 3-D charge transport networks. The resulting side chain-free conjugated polymer is proven to be an active p-type semiconductor material for organic thin film transistors (OTFTs), exhibiting hole mobility of up to 0.078 cm2V-1s-1. This thermo-cleavable polymer was blended with PDQT to form films that showed a higher performance than the pure individual polymers in OTFTs. MoO3 or NPB was used as a hole injection buffer layer between the metal electrodes and the polymer semiconductor film layer in OTFT devices. This buffer layer improved hole injection, while its use in the OTFT, improved the field-effect mobility significantly due to better matched energy levels between the electrodes and the polymer semiconductor.

Anaerobic digestion (AD) of corn thin stillage (CTS) offers the potential to reduce corn grain ethanol production energy consumption. This thesis focuses on results collected from AD of CTS at mesophilic temperatures in batch and by down-flow fixed film reactor. Experiments conducted include a series of biochemical methane potential (BMP) assays that investigated the digestion of CTS as the sole carbon source at a variety of food-to- microorganism ratios with and without acclimated biomass, under co-digestion conditions and also with the addition of supplemental nutrients. Additional BMP assays were conducted which investigated the potential to reduce fresh water consumption by using of digested effluent for substrate dilution. Continuous studies employed two 28L down-flow stationary fixed film reactors to examine. Chemical oxygen demand and volatile solids removal efficiencies greater than 85% were achieved up to an organic loading rate of 7.4 g TCOD/L/d and hydraulic retention time of 5 days.

Grounded in Self-Determination Theory (Deci & Ryan, 1985, 2000), the purpose of this thesis was to investigate the protective role of self-determined (i.e., autonomous motivation) relative to non self-determined motivation (i.e., controlled motivation) in response to various media portrayals of the female body. Findings from three laboratory experiments support these hypotheses. Women who felt less self-determined in their daily activities (Study 1 and Study 3) and in the regulation of their eating behaviors (Study 2), perceived more pressure from the media to be thin (Study 1), experienced more body dissatisfaction (Study 1 and Study 2), expressed greater concerns over the quantity of food in their diets (Study 1), and reported more negative affect (Study 2) following exposure to a video which exemplified the societal ―thin ideal‖ compared to a video which did not. They also generated more negative self-appraisals of their body‘s appearance and competence (Study 3), experienced more body shame (Study 3), and reported more introjected reasons for restricting their actual intake of chocolate (Study 3) following exposure to video which depicted the female body as an instrument of women‘s actions compared to one which depicted the female body as object (Study 3). Conversely, women who felt more self-determined in their daily activities (Study 1 and Study 3) expressed greater concerns over the quality of food in their diet (Study 1) and reported less vitality (Study 3) in response to media portrayals of women engaged in self-care (Study 1) and physical activities (Study 3). However, body dissatisfied women who felt more self-determined in the regulation of their eating behaviors (Study 2) formulated more intentions to monitor their food intake and eat fewer unhealthy foods (Study 2) after viewing a video of thin female models compared to no models. Together, these findings support a protective function for self-determined motivation and a potentiating function for non self-determined motivation.

This thesis is predicated upon a vision of the future of computing with a separation of functionality between core and edges, very similar to that governing the Internet itself. In this vision, the core of our computing infrastructure is made up of vast server farms with an abundance of storage and processing cycles. Centralization of computation in these farms, coupled with high-speed wired or wireless connectivity, allows for pervasive access to a highly-available and well-maintained repository for data, configurations, and applications. Computation in the edges is concerned with provisioning application state and user data to rich clients, notably mobile devices equipped with powerful displays and graphics processors. We define flexible computing as systems support for applications that dynamically leverage the resources available in the core infrastructure, or cloud. The work in this thesis focuses on two instances of flexible computing that are crucial to the realization of the aforementioned vision. Location flexibility aims to, transparently and seamlessly, migrate applications between the edges and the core based on user demand. This enables performing the interactive tasks on rich edge clients and the computational tasks on powerful core servers. Scale flexibility is the ability of applications executing in cloud environments, such as parallel jobs or clustered servers, to swiftly grow and shrink their footprint according to execution demands. This thesis shows how we can use system virtualization to implement systems that provide scale and location flexibility. To that effect we build and evaluate two system prototypes: Snowbird and SnowFlock. We present techniques for manipulating virtual machine state that turn running software into a malleable entity which is easily manageable, is decoupled from the underlying hardware, and is capable of dynamic relocation and scaling. This thesis demonstrates that virtualization technology is a powerful and suitable tool to enable solutions for location and scale flexibility.