Stress induced wavelength shift of thin film filter (TFF) were investigated. The substrate thickness of the TFF were greatly reduced by lapping to enhance the effects of stress. For CWDM TFF, no significant wavelength shift was observed by reducing their substrate thickness from 300 £gm to 70 £gm. Further, thermal stress caused by direct heating the thin TFF to 100¢J shows no effective changes of their optical characteristics. On the other hand, wavelength shifts induced by mechanical stress after reducing the substrate thickness of the DWDM TFF were observed. The maximum wavelength shift 3.8 nm was measured by lapping the substrate from 1mm to 120 £gm. Additional wavelength shifts of 3.5 nm were observed from the thin DWDM TFF if a lens fiber was brought into close contact with the thin DWDM TFF and was pushed forward for a distance of 45 £gm.

The subject of this dissertation is to use precision cutting and polishing techniques to fabricate thin-film filters(TFFs) with a thickness of less than 100 £gm, and to discuss their applications in Wavelength Division Multiplexing(WDM) systems. To demonstrate the feasibility of the proposed technology, Si benches with wet-etching V grooves for precision fiber positioning and saw-cutting U grooves for placing the TFFs were fabricated. The insertion loss of the bench at 1.55 £gm input lights is less than - 0.5 dB. In addition, the stress induced pass band variations of band-pass TFF for Coarse WDM(CWDM) applications were studied. The pass band width of the band-pass TFF is 20 nm. After reducing the thickness of the 1.5 mm ¡Ñ 1.5 mm BP TFF to a thickness of 50 £gm, the center wavelength shift and pass band reduction are 4.64 nm and 1.54 nm, respectively.

The primary target of this paper is to fabricate bidirectional transceiver modules based on single mode fiber (SMF) and ultra-thin thin-film filter (TFF). Two major components, namely, SMF and ultra-thin TFF are hybrid integrated on the silicon bench using V-groove and U-groove techniques. A 1310 nm wavelength light was launched into the input SMF of the module. After passing through the filter, the light was received by the output SMF of the module. On the other hand, a 1550 nm wavelength light input to the SMF is reflected by the filter and collected by the output multimode fiber (MMF). Transceiver modules using two different fiber structures were fabricated. The first kind of the module uses standard SMF for 1310 nm light transmission. The insertion loss of the module for the 1310 nm wavelength light was 5.66 dB. In the second kind of the module lens fibers were used to replace the standard SMF. The insertion loss for the 1310 nm wavelength light was reduced to 0.98 dB. A reduction of 4.6 dB was achieved. For both modules, the insertion loss for the 1550 nm wavelength light reflected from the filter was around 0.5 dB.

The primary target of this paper is to fabricate triplexer modules based on Si-bench technology. The triplexer modules were formed by hybrid integration of single mode lensed fibers and ultra-thin thin-film filters (TFF) on silicon bench as using V-groove and U-groove techniques. The output light at 1.31 µm was launched into the input lensed fiber of the module. After passing through two filters, the light was received by the output lensed fiber of the module. The insertion loss of the module at the 1.31 µm light was 1.25 dB. On the other hand, incoming lights at 1.49µm and 1.55µm were received from the output lensed fiber. Lights at 1.49µm will pass through the first filter, and be reflected by the second filter, and eventually be collected into the second multimode fiber. The insertion loss of the module at the 1.49 µm light was 1.14 dB. The 1.55µm wavelength lights received at the lensed fiber are reflected by the first filter and collected by the first multimode fiber. The insertion loss of the module at the 1.55 µm light was 0.68 dB.