Thesis (Ph. D.)--School of Materials Science and Engineering, Georgia Institute of Technology, 2004. Directed by Meilin Liu. / Includes bibliographical references (leaves 180-190).

Thesis (Ph. D.)--University of Washington, 2003. / Vita. Includes bibliographical references (leaves 135-138).

Thesis (Ph. D.)--University of Missouri-Columbia, 1998. / Typescript. Vita. Includes bibliographical references (leaves 154-161). Also available on the Internet.

Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 147-151). Available also in a digital version from Dissertation Abstracts.

Thesis (Ph. D.)--Institute of Paper Chemistry, 1969. / Includes bibliographical references (p. 77-79).

Thesis (Ph. D.)--University of Missouri-Columbia, 2003. / Typescript. Vita. Includes bibliographical references (leaves 198-204). Also available on the Internet.

Thesis (Ph.D)--Chemical Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Deng,Yulin; Committee Member: Hsieh, Jeffery S.; Committee Member: Nair, Sankar; Committee Member: Singh, Preet; Committee Member: Yao, Donggang. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2010. / Committee Chair: Orlando, Thomas; Committee Member: El-Sayed, Mostafa; Committee Member: First, Phillip; Committee Member: Lackey, Jack; Committee Member: Tolbert, Laren. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Chemical vapor deposition is a process that enables the deposition of thin films material with a high degree of thickness control, composition and film quality. In an ultra-high vacuum environment (UHV), films of high purity and controlled crystal structure can be achieved. The control of the crystal structure is achieved thanks to reduced contamination, e.g. oxygen, which allows the grown film to align itself with the underlying substrate. The film purity is also ensured by the reduced amount of contaminants present in the UHV environment. This master’s thesis discusses the design and construction of a cold wall reactor using a pyrolytic graphite heater encased in a thin layer of pyrolytic boron nitride, and an Oerlikon-Leybold Turbovac 361 turbomolecular pump. This heater is shown to achieve temperatures greater than 1200°C, as well as reach pressures in the 10-10 Torr range. Graphene growth on copper is discussed as well as the ultra-high vacuum annealing of graphene devices on boron nitride substrates. The graphene growth experiments coupled with this system’s annealing capabilities demonstrate the functionality and versatility of this type of chemical vapor deposition system. / text

With the growing demand for miniaturization of devices and for new materials with useful properties, the use of Chemical Vapor Deposition (CVD) for the manufacture of thin films is receiving growing attention. The synthesis of potentially volatile metal complexes and investigation of their use as CVD precursors is an important part of this process. The research presented addresses several major areas of this process, (i) the identification and synthesis of ligands which can impart volatility to a metal complex, (ii) the synthesis, characterization, and assessment of volatility of metal complexes containing these ligands, and (iii) the full materials characterization of thin films grown with these complexes. The use of trimethylphosphine, bis(trifluoromethyl)pyrazolate, and bis(trifluoromethyl)pyrrolyl ligands have been successfully used to synthesize volatile new complexes of cobalt, rhodium, and nickel, some of which show promise for use as potential CVD precursors. / text