Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.

The High Radiation to Materials facility employs a high intensity pulsed beam imposing several challenges on the beam position monitors. Diamond has been shown to be a resilient material with its radiation hardness and mechanical strength, while it is also simple due to its wide bandgap removing the need for doping. A new type of diamond based beam position monitor has been constructed, which includes a hole in the center of the diamond where the majority of the beam is intended to pass through. This increases the longevity of the detectors as well as allowing them to be used for high intensity beams. The purpose of this thesis is to evaluate the performance of the detectors in the High Radiation to Materials facility for various beam parameters, involving differences in position, size, bunch intensity and bunch number. A prestudy consisting of calibration of the detectors using single incident particles is also presented. The detectors are shown to work as intended after a recalibration of the algorithm, albeit with a slightly lower precision than requested, giving a promising new beam position monitoring system. They work for the full intensity range and a single bunch resolution is achieved. Functionality is also shown with backscattering from dense targets.

Ultrathin films of Cobalt, Iron and Manganese have been thennally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural teclmiques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials with novel physical and magnetic properties, and hence new technological applications. Both Cobalt and Iron have been found to initially maintain a registry with the fee Cu (111) surface in a manner consistent with pseudomorphic growth. This growth is complicated by island rather than layer-by-layer growth in the initials stages of the film. In both cases a change in the structure of the film seems to occur at a point where the coalescence of islands in the film may be expected to occur. When the film does change structure they do not form a perfect over-layer with the structure of their bulk counterpart. The films do contain a number of features representative of the bulk phase but also contain considerable disorder and possibly remnants of fcc (111) structure. The order present in these films can be greatly improved by annealing. Manganese appears to grow with an fee Mn (111) lattice spacing and there is no sign of a change in structure in films of up to 4.61 ML thick. The gradual deposition and annealing of a film to 300°C, with a total deposition time the same as that for a 1 ML thick film, causes a surface reconstruction to occur that is apparent in a R30° (√3×√3) LEED pattern. This is attributed to the formation of a surface alloy, which is also supported by the local expansion of the Cu lattice in the (111) direction.

xiii, 84 p. ; ill. / This dissertation describes the deposition and characterization of an amorphous thin film with a composition near that of CuInSe 2 (CIS). The creation of an amorphous intermediate leads to a crystalline film at low annealing temperatures. Thin films were deposited from elemental sources in a custom built high vacuum chamber. Copper-selenium and indium-selenium binary layered samples were investigated to identify interfacial reactions that would form undesired binary intermediate compounds resulting in the need for high temperature annealing. Although the indium-selenium system did not form interfacial compounds on deposit, indium crystallized when the indium layer thickness exceeded 15 angstroms, disrupting the continuity of the elemental layers. Copper-selenium elemental layers with a repeat thickness of over 30 angstroms or compositions with less than 63% selenium formed CuSe on deposit. Several deposition schemes were investigated to identify the proper deposition pattern and thicknesses to form the CIS amorphous film. Simple co-deposition resulted in the nucleation of CIS. A simple stacking of the three elements in the older Se-In-Cu at a repeat thickness of 60 angstroms resulted in the nucleation of CuSe and sometimes CIS. The CIS most likely formed due to the disruption of the elemental layers by the growth of the CuSe. Reduction of the repeat thickness to 20 angstroms eliminated the nucleation of CuSe, as predicted by the study of the binary Cu-Se layered samples, but resulted in the nucleation of CIS, similar to the co-deposited samples. To eliminate both the thick Cu-Se region, and prevent the intermixing of all three elements, a more complex deposition pattern was initiated. The copper and selenium repeat thicknesses were reduced into a Se-Cu-Se-Cu-Se pattern followed by deposition of the indium layer at a total repeat thickness of 60 angstroms. At a Se:Cu ratio of 2:1 and the small repeat thickness, no Cu-Se phases nucleated. Additionally, the Cu-In interface was eliminated. For this deposition scheme, films with a selenium rich composition relative to CuInSez were generally amorphous. Those that were Cu-In rich always nucleated CIS on deposit. Annealing of all samples produced crystalline CIS. / Adviser: David C. Johnson

O presente trabalho estuda a produção e modificações físico-químicas do grafeno frente a tratamentos térmicos. Em uma primeira etapa, foi investigada a síntese de grafeno pela técnica de Deposição Química a partir da fase Vapor (CVD) sobre fitas de cobre. Nós variamos quatro parâmetros que influenciam no crescimento de grafeno: fluxo de metano (CH4), fluxo de hidrogênio (H2), tempo de crescimento e grau de pureza do cobre. Usando as técnicas de caracterização de espectroscopia Raman e microscopia óptica, observamos que fluxo menor de H2 e fluxo intermediários de CH4 favorecem o crescimento de grafeno de alta qualidade. Além disso, vimos que 15 minutos de crescimento de grafeno é suficiente para cobertura do substrato de cobre com grafeno. Por fim, foi visto que o maior grau de pureza do cobre permite a produção de monocamadas de grafeno mais homogêneas. Numa segunda etapa, foi realizado um estudo com objetivo de entender a interação de hidrogênio com monocamadas de grafeno. Nós usamos amostras de grafeno depositadas em filmes de SiO2 (285 nm)/Si e tratadas termicamente em atmosfera controlada de deutério (99,8%) em temperaturas entre 200 e 800 °C. Nós também investigamos a dessorção de hidrogênio do grafeno usando amostras previamente tratadas em deutério a 600 °C e depois tratadas em atmosfera controlada de nitrogênio em temperaturas entre 200 e 800 °C. Após os tratamentos, análise por reação nuclear (NRA) foi realizada para quantificar o deutério, onde nós observamos uma grande incorporação de deutério no grafeno acima de 400 °C, tendo um aumento moderado até 800 °C. Nós também observamos que a dessorção do deutério do grafeno ocorre apenas em 800 °C, embora a dessorção de deutério do óxido de silício ocorra a partir de 600°C. Espectroscopia Raman também foi realizada após cada tratamento térmico. Os resultados mostram que os defeitos na estrutura do grafeno têm um grande aumento para as etapas de maior temperatura na incorporação de deutério. Análises realizadas com Espectroscopia de Fotoelétrons Induzidos por Raios X (XPS) mostraram que a incorporação de deutério para maiores temperaturas causa o "etching" do grafeno. Por fim, caracterizações usando Espectroscopia de Absorção de Raios X (NEXAFS) mostraram que o deutério liga-se ao grafeno sem orientação preferencial. / The present work studies the production and physical-chemical modifications of the graphene under thermal annealings. In a first study, the graphene synthesis by Chemical Vapor Deposition (CVD) on copper foils was investigated. We varied four parameters that influence the growth of graphene: methane flow (CH4), hydrogen flow (H2), growth time and copper purity. Using Raman spectroscopy and optical microscopy, we observed that lower flux of H2 and intermediate flux of CH4 leads to the growth of high quality graphene. In addition, we observed that 15 minutes growth of graphene is sufficient to cover the copper substrate. A higher copper purity allows the production of homogeneous graphene monolayers. In a second step, a study was carried out to understand the interaction of hydrogen with graphene monolayers. We used graphene samples deposited on SiO2 (285 nm)/Si films and annealed in a controlled atmosphere of deuterium (99.8%) at temperatures between 200 and 800 °C. We also investigated the hydrogen desorption of graphene using samples previously treated in deuterium at 600 °C and then annealed in a controlled atmosphere of nitrogen at temperatures between 200 and 800 °C. After the annealings, nuclear reaction analysis (NRA) was performed to quantify the deuterium, where we observed a large incorporation of deuterium in graphene above 400 °C, with a moderate increase up to 800 °C. We also observed that desorption of deuterium occurs only at 800 °C, although deuterium desorption from silicon oxide occurs at 600 °C. Raman spectroscopy was also performed after each annealing. The results show that defects in the structure of graphene have a large increase for deuterium incorporation. Analyzes carried out with X-ray Photoelectron Spectroscopy (XPS) showed that the deuterium incorporation at higher temperatures leads to graphene etching. Finally, characterizations using X-ray Absorption Spectroscopy (NEXAFS) showed that deuterium binds to graphene without preferential orientation.

Tese (doutorado)—Universidade de Brasília, Faculdade de Tecnologia, Departamento de Engenharia Mecânica, 2015. / Submitted by Fernanda Percia França (fernandafranca@bce.unb.br) on 2015-11-20T19:59:26Z No. of bitstreams: 1 2015_EdgarSobralAshiuchi.pdf: 4822357 bytes, checksum: 0a5b84f109f0c56b9d9bd06d784e6ea3 (MD5) / Approved for entry into archive by Raquel Viana(raquelviana@bce.unb.br) on 2016-05-12T19:28:40Z (GMT) No. of bitstreams: 1 2015_EdgarSobralAshiuchi.pdf: 4822357 bytes, checksum: 0a5b84f109f0c56b9d9bd06d784e6ea3 (MD5) / Made available in DSpace on 2016-05-12T19:28:40Z (GMT). No. of bitstreams: 1 2015_EdgarSobralAshiuchi.pdf: 4822357 bytes, checksum: 0a5b84f109f0c56b9d9bd06d784e6ea3 (MD5) / Este trabalho tem como principal objetivo investigar os efeitos do tratamento criogênico profundo quanto à microabrasão na liga de alumínio laminado AA 6101-T4 com e sem o revestimento de CrN depositado por PVD. O material tal como recebido foi utilizado como referência de desempenho em ensaios de resistência ao desgaste microabrasivo para amostras que receberam o tratamento criogênico, o revestimento de CrN ou as combinações de ambos. O material tratado criogenicamente apresentou aumento relativo na resistência ao desgaste da ordem de 35%. Com uma combinação específica do tratamento criogênico profundo e do revestimento de filme fino de CrN, a resistência ao desgaste obteve incremento da ordem de 81%. Esse resultado da combinação do tratamento criogênico e do revestimento de CrN foi substancialmente superior aos obtidos para os materiais que receberam apenas um deles. Levando em consideração os mecanismos de desgaste manifestados no sistema tribológico, a dureza não demonstrou acompanhar o acréscimo da resistência ao desgaste. Estruturas nanométricas tais como aglomerados ou zonas de Guinier-Preston (GP) exibiram maior concentração nas amostras tratadas criogenicamente. De acordo com este trabalho, apenas a presença de tais nanoestruturas pôde ser associada ao aumento da resistência ao desgaste com a aplicação do tratamento criogênico profundo. Esta tese explora esse tipo de beneficiamento além dos limites da sua habitual aplicação para o aço. _______________________________________________________________________________________________ ABSTRACT / This work aimed to investigate the effects of deep cryogenic treatment with respect to the abrasion in rolled aluminum alloy AA 6101-T4 with and without the CrN coating deposited by PVD. The material as received was used as a performance benchmark in microabrasive wear resistance test for samples receiving the cryogenic treatment, the CrN coatings or combinations of both. The cryogenically treated material presented relative increase in wear resistance of the order of 35%. With a specific combination of deep cryogenic treatment and the thin CrN film coating, the wear resistance was an increase of approximately 81%. This results from the combination of the cryogenic treatment and CrN coating was substantially higher than those obtained for the materials that received only one of them. Taking into account the wear mechanisms manifested in the tribological system, the hardness did not show follow the wear resistance increase. Nanoscale structures such as clusters or Guinier-Preston(GP) zones exhibited highest concentration in the samples treated cryogenically. According to this work, only the presence of such nanostructures could be associated with increased wear resistance for the material cryogenic treated. This thesis explores the deep cryogenic treatment beyond the limits of their usual application for steel.

abstract: Pyrite is a 0.95 eV bandgap semiconductor which is purported to have great potential in widespread, low–cost photovoltaic cells. A thorough material selection process was used in the design of a pyrite sequential vapor deposition chamber aimed at reducing and possibly eliminating contamination during thin film growth. The design process focused on identifying materials that do not produce volatile components when exposed to high temperatures and high sulfur pressures. Once the materials were identified and design was completed, the ultra–high vacuum growth system was constructed and tested. Pyrite thin films were deposited using the upgraded sequential vapor deposition chamber by varying the substrate temperature from 250°C to 420°C during deposition, keeping sulfur pressure constant at 1 Torr. Secondary Ion Mass Spectrometry (SIMS) results showed that all contaminants in the films were reduced in concentration by orders of magnitude from those grown with the previous system. Characterization techniques of Rutherford Back–scattering Spectrometry (RBS), X–Ray Diffraction (XRD), Raman Spectroscopy, Optical Profilometry and UV/Vis/Near–IR Spectroscopy were performed on the deposited thin films. The results indicate that stoichiometric ratio of S:Fe, structural–quality (epitaxy), optical roughness and percentage of pyrite in the deposited thin films improve with increase in deposition temperature. A Tauc plot of the optical measurements indicates that the pyrite thin films have a bandgap of 0.94 eV. / Dissertation/Thesis / Masters Thesis Materials Science and Engineering 2016

Made available in DSpace on 2014-06-11T19:27:48Z (GMT). No. of bitstreams: 0 Previous issue date: 2003-12-19Bitstream added on 2014-06-13T20:56:56Z : No. of bitstreams: 1 lima_lm_me_arafo.pdf: 817104 bytes, checksum: 137c4b299daadfdf7ba4a2a6bd1a030b (MD5) / A tecnologia CVD (Chemical Vapor Deposition) aplicada à confecção de pontas odontológicas diamantadas possibilitou aderência do diamante à haste metálica suficiente para suportar o efeito do ultra-som, surgindo então uma técnica alternativa para corte de tecido dentário. O objetivo deste estudo in vitro foi avaliar a efetividade dos corte realizados com as pontas CVD cilíndrica e esférica para ultra-som (pontas CVDentUSÒ), em esmalte e dentina de dentes permanentes, variando-se o sentido de movimento (frontal e lateral). Foram utilizados 40 terceiros molares, num total de 80 preparos cavitários confeccionados por meio de um dispositivo padronizador. Os cortes foram realizados com 30 movimentos consecutivos da ponta sobre a superfície dentária, correspondendo a 27 segundos de utilização das pontas CVDentUSÒ. A profundidade e largura dos preparos cavitários foram analisadas em microscopia eletrônica de varredura e medidas por meio de uma análise cefalométrica modificada no programa Radiocef 4.0 (Radiocef Memory Ltda). A análise estatística pelo teste não paramétrico de Kruskal-Wallis ao nível de significância de 5% mostrou que as maiores médias de largura e profundidade foram observadas nos preparos de dentina, sendo a ponta esférica responsável por cavidades mais profundas e a cilíndrica por cavidades mais largas, não havendo influência dos sentidos de movimento da ponta. / The CVD (Chemical Vapor Deposition) technology applied in dental diamond burs manufacture allowed to the diamond to have enough adherence to the metallic stem supporting the ultrasound effect. This technique is bringing back an alternative method to cut dental tissue. The aim of this in vitro study was to evaluate the cutting effectiveness of cylindrical and round CVD-coated diamond burs for ultrasound (CVDentUSÒ system), in enamel and dentine of permanent teeth, changing the movement sense (frontal and lateral). Forty third molars were used, in a total of 80 cavity preparations made using a standard device. The cuts were made with 30 consecutive movements of the bur on the dental surface, corresponding to 27 seconds of CVDentUSÒ tips use. The depth and width of the cavity preparations were analyzed by scanning electronic microscopy and the measures were made using a modified cefalometric analysis in a Radiocef 4.0 program (Radiocef Memory Ltda). The statistical analysis applying Kruskal-Wallis non-parametric test, at 5% significance level, showed that the largest width and depth averages were observed in dentine cavities, being the round bur responsible for deeper cavities and the cylindrical for wider cavities. The movement senses had no influence on cavity size.

Made available in DSpace on 2014-10-09T12:35:06Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:00:28Z (GMT). No. of bitstreams: 0 / Dissertação (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Thesis (MTech (Mechanical Engineering))--Cape Peninsula University of Technology. / For the last few decades, methods to improve the engine efficiency and reduce the fuel consumption of jet engines have received increased attention. One of the solutions is to increase the operating temperature in order to increase the exhaust gas temperature, resulting in an increased engine power. However, this approach can be degrading for some engine parts such as turbine blades, which are required to operate in a very hostile environment (at ≈ 90% of their melting point temperature). Thus, an additional treatment must be carried out to protect these parts from corrosion, oxidation and erosion, as well as to maintain the substrate’s mechanical properties which can be modified by the high temperatures to which these parts are exposed. Coating, as the most known protection method, has been used for the last few decades to protect aircraft engine parts. According to Wolfe and Co-workers [1], 75% of all engine components are now coated. The most promising studies show that the thermal barrier coating (TBC) is the best adapted coating system for these high temperature applications. TBC is defined as a fine layer of material (generally ceramic or metallic material or both) directly deposited on the surface of the part In order to create a separation between the substrate and the environment to reduce the effect of the temperature aggression. However, the application of TBCs on surfaces of components presents a challenge in terms of the consistency of the thickness of the layer. This is due to the nature of the processes used to apply these coatings. It has been found that variations in the coating thickness can affect the thermodynamic performance of turbine blades as well as lead to premature damage due to higher thermal gradients in certain sections of the blade. Thus, it is necessary to optimise the thickness distribution of the coating.