L’étude présentée dans ce manuscrit porte sur la réplication de structures naturelles multi-échelles et multifonctionnelles, que sont les ailes des papillons Morpho rhetenor, Morpho menelaus et Papilio ulysse, ou celles de la cigale Cicada orni. De telles structures sont en effet constituées de sous-structures à différentes échelles, du centimètre au nanomètre, et à chacune de ces échelles est associée une propriété ou fonction. On parle alors de multifonctionnalité. Cet atout, très recherché actuellement pour nos futurs objets et matériaux, est accessible par deux voies de complexification : celle de la composition chimique du ou des matériaux constituant l’objet (matériaux composites, hybrides organique-inorganique) et/ou celle de leur géométrie (structuration). Or, si nos connaissances en chimie nous permettent de mettre en œuvre la première voie, l’élaboration de structures multi-échelles est encore difficile par nos techniques actuelles de structuration (lithographie par exemple). Ainsi, pour augmenter les propriétés d’un système possédant une géométrie multi-échelles existante dans la nature, nous avons réalisé des répliques des structures naturelles précédemment évoquées dans des matériaux inorganiques (TiO2 et SiO2), soit des matériaux très différents du complexe chitino-protéique qui constituent les ailes organiques. A cette fin, trois méthodes ont été utilisées : un dépôt de matière dans les structures naturelles par voie sol-gel, un dépôt par pulvérisation cathodique et une minéralisation directe de la structure des ailes, s’inspirant de processus de biominéralisation. / The present study deals with the replication of multiscale and multifunctional natural structures. These natural structures are wings of Morpho rhetenor, Morpho menelaus and Papilio ulysse butterflies, and those of Cicada orni cicada. Such structures are composed of smaller structures at different scales, from centimetre to nanometre, and to each of these scales is associated a property or a function. This we call multifunctionality. This multifunctionality is expected to become a property of our future objects or materials, and can be achieved by two different ways: to make the material(s) chemical composition of the object more complex (composite, hybrid organic-inorganic materials) and/or to make its architecture more complex (structuration). Although it is possible to achieve the first (chemical composition), we have so far been unable to successfully make multiscale structures with our current structuration techniques (lithography for example). Therefore, to increase the properties of a system characterised by a multiscale structure seen in nature, we have made replicas of the natural structures previously presented in inorganic materials (TiO2 and SiO2). That is to say, very different materials in comparison with the natural chitin-protein complex. To do this, three methods were used: a sol-gel solution deposition in the natural structures, a physical vapor deposition and a direct mineralization of the wings structure, which is inspired by natural biomineralization processes.

Necessity is the mother of all inventions. With Si hitting the speed bottleneck, newer materials to replace Si are being sought out. The ex-foliation based experiments on graphene by Geim and Novoselov at this point was perfect as many of its physical properties were fascinating from an electronics standpoint and hence it was very soon projected as a Si replacement for logic applications. In addition, graphene is also an attractive alternative to applications such as radio frequency devices, ultra-sensitive mass/chemical sensing, high-speed optoelectronics and transparent conductors for photo-voltaic applications. While the widespread success and utility of Si can be attributed to easy availability of source material and the ability to synthesize large areas of ultra high quality material, chemical vapor deposition (CVD) is the only available method to controllably produce large area monolayer graphene. CVD graphene is however polycrystalline and therefore defective. Hence, in order to promote graphene towards large-scale commercialization, it is necessary to be able to grow spatially homogeneous graphene with tailored defect densities. Transfer of atomic layers of graphene from the substrate on which it is grown, a Cu foil typically, on to an insulating substrate for electrical measurements is typically a major defect inducing step. Hence, a direct transfer-free fabrication of suspended device using graphene grown on thin films of electro-deposited Cu was attempted and successfully reported for the first time. Though it was shown that the fabrication process itself did not introduce any additional defects, the maximum obtained mobility on such fabricated structures was 5200 cm2/V·s. This value is lower than reported values in literature and thus improvements for electronic applications warranted further optimization. However, limitations on ability of electro-deposited Cu films (melting point of 1083 ◦C) to withstand high temperatures, 1000 ◦C, impeded further optimizations. Hence, growth on Cu foils was taken up. On Cu foil, we were able to identify the roles of the growth kinetics and system thermodynamics on the final quality of graphene. Specifically, by carefully altering the conditions during appropriate growth phases, we were able to obtain graphene films of tunable defect densities with motilities ranging from 200 - 20000 cm2/V·s. Using a host of characterization Techniques like electrical transport, Raman spectroscopic measurements, TEM imaging and water permeation studies, we find that the defect densities in graphene are largely concentrated at the boundaries, while the bulk of the graphene grain remains pristine. Further investigations revealed a thermodynamic correlation between the growth conditions and quality of the grain boundary in terms of defect density and structure. In addition to the influence of defects in graphene on charge mobility as seen before, their impact on the device contact resistance and charge transport hysteresis in graphene field effect transistors were also investigated. With a careful control on the film defect density, we were able to demonstrate devices with low contact resistance (1000 Ωµm ) and tunable hysteresis behavior. Finally, alternate substrates for graphene and its impact on the carrier densities were explored. Non-polar substrate SiO2 and polar substrates such AlN and AlGaN were chosen. On AlN, we obtained higher carrier mobility due to reduced phonon-electron scattering and a higher ’P’ doping behavior due to piezo-electric effects. Hence, to leverage the previous observation, novel FET device architecture with a HEMT based substrate using AlGaN was demonstrated.

The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to grow InAs/GaSb strained layer superlattices (SLS’s) at 510 °C in this study. This is a starting point towards the development of MOVPE InAs/InxGa1-xSb SLS’s using the same system. Before the SLS’s could be attempted, the growth parameters for GaSb were optimised. Growth parameters for InAs were taken from reports on previous studies conducted using the same reactor. Initially, trimethylgallium, a source that has been used extensively in the same growth system for the growth of GaSb and InxGa1-xSb was intended to be used for gallium species. The high growth rates yielded by this source were too large for the growth of SLS structures, however. Thus, triethylgallium (rarely used for atmospheric pressure MOVPE) was utilized. GaSb layers (between 1 and 2 μm thick) were grown at two different temperatures (550 °C and 510 °C) with a varying V/III ratio. A V/III ratio of 1.5 was found to be optimal at 550 °C. However, the low incorporation efficiency of indium into GaSb at this temperature was inadequate to obtain InxGa1-xSb with an indium mole fraction (x) of around 0.3, which had previously been reported to be optimal for the performance of InAs/InxGa1-xSb SLS’s, due to the maximum splitting of the valence mini bands for this composition. The growth temperature was thus lowered to 510 °C. This resulted in an increase in the optimum V/III ratio to 1.75 for GaSb and yielded much higher incorporation efficiencies of indium in InxGa1-xSb. However, this lower growth temperature also produced poorer surface morphologies for both the binary and ternary layers, due to the reduced surface diffusion of the adsorbed species. An interface control study during the growth of InAs/GaSb SLS’s was subsequently conducted, by investigating the influence of different gas switching sequences on the interface type and quality. It was noted that the growth of SLS’s without any growth interruptions at the interfaces leads to tensile strained SLS’s (GaAs-like interfaces) with a rather large lattice mismatch. A 5 second flow of TMSb over the InAs surface and a flow of H2 over GaSb surface yielded compressively strained SLS’s. Flowing TMIn for 1 second and following by a flow of TMSb for 4 seconds over the GaSb surface, while flowing H2 for 5 seconds over the InAs surface, resulted in SLS’s with GaAs-like interfacial layers and a reduced lattice mismatch. Temperature gradients across the surface of the susceptor led to SLS’s with different structural quality. High resolution x-ray diffraction (HRXRD) was used to determine the thicknesses as well as the type of interfacial layers. The physical parameters of the SLS’s obtained from simulating the HRXRD spectra were comparable to the parameters obtained from cross sectional transmission electron microscopy (XTEM) images. The thicknesses of the layers and the interface type played a major role in determining the cut-off wavelength of the SLS’s.

No description available.

This thesis analyzes the chemical vapour deposition (CVD) growth of vertically aligned carbon nanotube (CNT) forests in order to understand how CNT forests grow, why they stop growing, and how to control the properties of the synthesized CNTs. In situ kinetics data of the growth of CNT forests are gathered by in situ optical microscopy. The overall morphology of the forests and the characteristics of the individual CNTs in the forests are investigated using scanning electron microscopy and Raman spectroscopy. The in situ data show that forest growth and termination are activated processes (with activation energies on the order of 1 eV), suggesting a possible chemical origin. The activation energy changes at a critical temperature for ethanol CVD (approximately 870°C). These activation energies and critical temperature are also seen in the temperature dependence of several important characteristics of the CNTs, including the defect density as determined by Raman spectroscopy. This observation is seen across several CVD processes and suggests a mechanism of defect healing. The CNT diameter also depends on the growth temperature. In this thesis, a thermodynamic model is proposed. This model predicts a temperature and pressure dependence of the CNT diameter from the thermodynamics of the synthesis reaction and the effect of strain on the enthalpy of formation of CNTs. The forest morphology suggests significant interaction between the constituent CNTs. These interactions may play a role in termination. The morphology, in particular a microscale rippling feature that is capable of diffracting light, suggest a non-uniform growth rate across the forest. A gas phase diffusion model predicts a non-uniform distribution of the source gas. This gas phase diffusion is suggested as a possible explanation for the non-uniform growth rate. The gas phase diffusion is important because growth by acetylene CVD is found to be very efficient (approximately 30% of the acetylene is converted to CNTs). It is seen that multiple mechanisms are active during CNT growth. The results of this thesis provide insight into both the basic understanding of the microscopic processes involved in CVD growth and how to control the properties of the synthesized CNTs.

In situ Raman spectroscopy was used to explore etching of carbon nanotubes as well as their growth from C60. The thesis is in three parts: (1) C60 seed particles were partially oxidized in air and were used to grow carbon nanotubes and other nanocarbon structures. Seed oxidization was characterized by monitoring the evolution of the Raman Ag(2) peak and the D band, and oxidation temperature was found to be critical to nanotube growth. (2) To further explore oxidation, carbon nanotubes were thermally oxidized in air at different temperatures, while the evolution of different Raman bands was tracked. Etching dynamics and band intensity evolution were tracked in situ. Notably, metallic species were found to etch much more rapidly than semiconducting species of similar diameter. (3) To confirm and expand on this, a novel, simultaneous two-laser Raman spectroscopy setup was used to track the thermal oxidation of carbon nanotubes in O2 and CO2 gases at different temperatures. Metallic species were resonant with one laser line, while semiconducting species were resonant with the other, so changes to sample metallicity could be tracked unambiguously in two separate spectra. Again, metals were found to etch more rapidly. In situ Raman spectroscopy can track the evolution of nanotubes in real time and provide insight into processing. In general, detailed process monitoring like this can help in the development of selective synthesis and processing.

Despite the tremendous application potentials of carbon nanotubes (CNTs) proposed by researchers in the last two decades, efficient experimental techniques and methods are still in need for controllable production of CNTs in large scale, and for conclusive characterizations of their properties in order to apply CNTs in high accuracy engineering. In this dissertation, horizontally well-aligned high quality single-walled carbon nanotubes (SWCNTs) have been successfully synthesized on St-cut quartz substrate by chemical vapor deposition (CVD). Effective radial moduli (Eradial) of these straight SWCNTs have been measured by using well-calibrated tapping mode and contact mode atomic force microscopy (AFM). It was found that the measured Eradial decreased from 57 to 9 GPa as the diameter of the SWCNTs increased from 0.92 to 1.91 nm. The experimental results were consistent with the recently reported theoretical simulation data. The method used in this mechanical property test can be easily applied to measure the mechanical properties of other low-dimension nanostructures, such as nanowires and nanodots. The characterized sample is also an ideal platform for electrochemical tests. The electrochemical activities of redox probes Fe(CN)63-/4-, Ru(NH3)63+, Ru(bpy)32+ and protein cytochrome c have been studied on these pristine thin films by using aligned SWCNTs as working electrodes. A simple and high performance electrochemical sensor was fabricated. Flow sensing capability of the device has been tested for detecting neurotransmitter dopamine at physiological conditions with the presence of Bovine serum albumin. Good sensitivity, fast response, high stability and anti-fouling capability were observed. Therefore, the fabricated sensor showed great potential for sensing applications in complicated solution.

In the context of the future hydrogen economy, effective production of hydrogen (H2) from readily available and sustainable resources is of crucial importance. Hydrogen generation via water splitting by solar energy or electricity has attracted great attention in recent years. In comparison with photocatalytic water-splitting directly using solar light, which is ideal but the relevant technologies are not yet mature, electrolysis of water with catalyst is more practical at the current stage. The Pt-group noble metals are the most effective electrocatalysts for hydrogen evolution reaction (HER) from water, but their high costs limit their applications. Due to the earth-abundance and low price, MoS2 is expected to be a good alternative of the Pt-group metals for HER. Plenty of researches have been conducted for improving the HER activities of MoS2 by optimizing its synthesis method. However, it remains challenging to prepare MoS2 catalysts with high and controllable activity, and more investigations are still needed to better understand the structure-performance correlation in this system. In this thesis, we report a new strategy for fabricating MoS2 eletrocatalysts which gives rise to much improved HER performance and allows us to tune the electrocatalytic activity by varying the preparation conditions. Specifically, we sulfurized molybdenum oxide on the surface of a Ti foil electrode via a facile chemical vapor deposition (CVD) method, and directly used the electrode for HER testing. Depending on the CVD temperature, the MoO2-MoS2 nanocomposites show different HER activities. Under the optimal synthesis condition (400ºC), the resulting catalyst exhibited excellent HER activity: an onset potential (overpotential) of 0.095 V versus RHE and the Tafel slope of 40 mv/dec. Such a performance exceeds those of most reported MoS2 based HER electrocatalysts. We demonstrated that the CVD temperature has significant influence on the catalysts in crystallinity degree, particle size and dispersion, morphology, and density of the edge sites etc., and these factors in turn determine the HER activity.

京都大学 / 0048 / 新制・課程博士 / 博士(エネルギー科学) / 甲第22709号 / エネ博第406号 / 新制||エネ||78(附属図書館) / 京都大学大学院エネルギー科学研究科エネルギー基礎科学専攻 / (主査)教授 坂口 浩司, 教授 松田 一成, 教授 野平 俊之 / 学位規則第4条第1項該当 / Doctor of Energy Science / Kyoto University / DFAM

In this thesis, the local field enhancement from multiple plasmonic structures were studied in different experiments. A new approach was applied to enhance the emission from upconverting nanoparticles to harvest energy from photons below the bandgap. A novel nanofabrication method was introduced to make double nanoholes for use in optical trapping, which was implemented to observe the nonlinear response from 2D materials and the enhanced emission from upconverting single nanoparticles. This method makes a large amount of apertures and is inexpensive. Selective plasmon-enhanced emission from erbium-doped nanoparticles using gold nanorods was demonstrated. Upconversion nanoparticles were excited with a dual-wavelength source of 1520~nm and 1210~nm simultaneously. The power dependence of the observed upconversion emission confirmed the contribution of both excitation bands in the upconversion process. Gold nanorods with resonances at 980~nm and 808~nm were implemented to selectively enhance the upconversion emission in order to harvest light with Si and GaAs solar cells, respectively. I also used colloidal lithography to fabricate double nanoholes which were plasmonic structures used for protein and nanoparticle trapping. This bottom-up technique enabled the fabrication of a large number of structures at low cost. Plasma etching of polystyrene nanoparticles using this technique tuned the cusp separation of double nanoholes down to 10~nm. The smaller cups separation enables to have more confined field in the gap which can be used in plasmonic sensing and plasmon enhanced upconversion processes. This technique can be used to fabricate plasmonic structures for nanoparticle trapping, spectroscopy, and sensing. In the next project, hexagonal boron nitride nanoflakes were trapped in a double nanohole fabricated with the colloidal lithography method. A second harmonic signal was detected at 486.5~nm where the particle was trapped and pumped with an ultra-low power laser at 973~nm. The power dependence measurements supported the second order process for second harmonic generation. Finite-difference time-domain (FDTD) simulations showed a 500-fold field intensity enhancement at the fundamental wavelength and a 450-fold enhancement in the Purcell factor at the second harmonic generation wavelength. This scheme is promising for ultra-fast imaging nonlinear optics technologies. In the last project, colloidal lithography double nanoholes were used to trap upconverting nanocrystals. Colloidal lithography double nanoholes with 32~nm cusp separation achieved 50 times larger emission compared to rectangular apertures. FDTD simulations showed the largest field enhancement in the aperture with the largest upconversion enhancement. 1550~nm emission from the trapped nanoparticle can be used as single-photon source. / Graduate