[pt] O estudo a respeito de homojunções e heterojunções se apresenta como de grande interesse científico e tecnológico, pois os mecanismos de formação e de atuação dessas estruturas ainda não são plenamente conhecidos. Essas junções estão na base de diferentes tecnologias, tais como, diodos, transistores, capacitores e supercapacitores, varistores, células fotovoltaicas, detectores de luz UV, diversos tipos de sensores, catalisadores e fotocatalisadores, entre outros. A presente tese de doutorado visa contribuir para o desenvolvimento de sistemas cerâmicos policristalinos (micro e nanoestruturados) à base de ZnO e SnO2 e para a compreensão dos mecanismos de formação das homojunções e heterojunções presentes nesse sistema material e suas relações com o comportamento varistor, em termos da estabilidade e degradação dessas junções. Microscopia eletrônica de varredura, espectroscopia de raios-X por dispersão de energia e difração de raios-X foram utilizadas para a caracterização microestrutural. Análises térmica e dilatométrica foram utilizadas para a determinação dos parâmetros e mecanismos de densificação e sinterização que dão origem às junções consideradas. Para a determinação das características elétricas foi utilizada a análise de capacitância e levantamento das curvas de polarização. Em função das composições químicas avaliadas foram obtidas microestruturas composta por homojunções e heterojunções, com diferentes níveis de densificação e características varistoras, ou seja, comportamento não-linear entre tensão e corrente elétrica, com tensões de chaveamento de diferentes magnitudes, permitindo relacionar o comportamento eletrotérmico dos varistores com as características das homojunções e heterojunções consideradas. / [en] The study about homojunctions and heterojunctions has scientific and technological value, because the mechanisms of formation and performance of these structures are not fully known. These junctions are in the base of different technologies, such as diodes, transistors, capacitors and supercapacitors, varistors, photovoltaic cells, detector of UV light, many kinds of sensors, catalysts and photocatalysts, among others. The present thesis aims to contribute to the development of polycrystalline ceramic systems (micro and nanostructured) based on ZnO and SnO2 and to the understanding ofthe mechanisms of formation of homojunctions and heterojunctions present in these systems and their relations with the varistor behavior, in terms of stability and degradation. Scanning electron microscopy, X-ray energy dispersive spectroscopy and X-ray diffraction were used to the microstructural characterization. Thermal and dilatometric analyses were used to determine the parameters and mechanisms of densification and sintering that give rise to the junctions considered. For the determination of the electrical characteristics, analysis of capacitance and polarization curves were used. Depending on the chemical compositions a variely of microstructures were obtained containing homojunctions and heterojunctions, with different densification levels and distinct varistors characteristics, that it, nonlinear behavior between voltage and electric current, with different magnitudes of switching voltages permitting to correlate the electrothermal behavior of varistors with the characteristics of homojunctions and heterojunctions considered.

Neste trabalho, eletrocerâmicas a base de BaTiO3 e Ba(1-x)Erx TiO3 com x(Er3+) = 0,001, 0,010 e 0,050 foram preparadas através do método dos precursores poliméricos, com o propósito de estudar as possíveis relações entre os comportamentos termistor (tipo PTCR) e varistor em nível elétrico e microestrutural. Após calcinação dos pós-precursores em 700°C por 2h, os pós compactados isostaticamente a 300 MPa na forma de pastilhas, foram sinterizados em 1200°C, 1250°C, 1300°C e 1350°C. Foram realizadas caracterizações estruturais e microestruturais aplicando as técnicas de difração de raios X e microscopia eletrônica de varredura por emissão de campo, além de estudos elétricos e dielétricos utilizando a técnica de espectroscopia de impedância como ferramenta principal. Destas caracterizações, verificou-se a obtenção de materiais cerâmicos densos e com valores médios de tamanhos de grãos dependentes de x(Er3+) bem como da temperatura de sinterização. A análise dos resultados de espectroscopia de impedância via circuito equivalente revelaram para as amostras de Ba(1-x)ErxTiO3 que as respostas elétricas podem ser associadas a 3 microrregiões (Modelo Core-Shell): os núcleos e as \"couraças\", ambas relacionadas as porções internas dos grãos cerâmicos, mais os contornos de grãos, respectivamente. Considerando as contribuições resistivas associadas a cada microrregião, em função das tensões e temperaturas aplicadas, os comportamentos varistor e termistor das eletrocerâmicas de Ba(1-x)ErxTiO3 são apresentados e caracterizados em relação ao comportamento das amostras de BaTiO3. No âmbito geral, este trabalho revela uma boa correlação entre estes fenômenos e suas associações a cada microrregião identificada pelos modelos de circuitos equivalentes supostos na literatura. / Electroceramics based on Ba(1-x)ErxTiO3, with x(Er3+) = 0,001, 0,010, 0,050 stoichiometry were synthesized by the polymeric precursors method in an attempt to correlate the possible relations between the PTCR effect and the varistor behavior detected in terms of microstructures by electrical properties. After calcinated at 700°C for 2h, the samples were processed like pellets under isostatically compaction at 300 MPa, and sintered at 1200°C, 1250°C, 1300°C 1350°C, by 3h. Characterizations were made by x-ray diffraction, scanning electron microscopy with field emission gun and impedance spectroscopy, this last one, as the key tool from this work. The results, in general, showed good densification parameters, which are dependent of x(Er3+) and sintering temperature as well. Furthermore, impedance spectroscopy via equivalents circuits, in terms of the series layer model, revealed the appearance of three microregions, which are stated to be in well agreement with the Core-Shell microstructural model. Considering the relation between the resistive response of each microregion, i.e., the nuclei, the intermediary shells and the grain boundaries, it was possible to establish a path to the relation between PTCR effect with the varistor one under the structural, microstructural and electrical peculiarities from the Ba(1-x)ErxTiO3 electroceramic system, in comparison with the pure polycrystalline BaTiO3 behavior.

Made available in DSpace on 2017-07-21T20:42:31Z (GMT). No. of bitstreams: 1 Herve Stangler Irion.pdf: 4493069 bytes, checksum: 2fe9398c9c2006313a4b148ad265c9dd (MD5) Previous issue date: 2006-03-30 / In this work it was investigated the influence the in influence of the doping Pr6O11 in the electrical conductivity and in the microstructural properties in the basic ternary system (98,95 – x)%Sn02 1,0% Co0 0,05%Ta205. The used concentration of the doping Pr6011 had varied in 0,05%, 0.5% in mol, remaining constant the concentrations for the Co0 and Ta205. The processing applied was the conventional method of mixture of oxides in ambient atmosphere. The samples had been conformed in 50 MPa and sintered in 1350°C for 2 hours. After the sintering the densification of ceramics was verified with a value of 93,63% for the system with 0,1% in mol of Pr6011. The study of the electrical properties for the varistor system Sn02.Co0.Ta205 Pr6011 was carried out in continuous current in the ambient temperature and in function of the temperature. It was observed that the variation in the concentration of Pr6011 modifies the electrical behavior of the ceramics. The electrical parameters found are of [alfa]= 8,0, Er= 319 volts/cm and Vb= 0,66 volts/barrier for basic ternary system and [alfa]= 17,0 Er= 853 volts/cm and Vb= 1,15 volts/barrier with the addition of 0,10% in mol of Pr6011. The system with 0,05% mol 0.1% in mol Pr6011 presents the same value of the non linearity coefficient of the system with 0,1% in mol, however, with lower values of rupture tension and barrier tension (Er= 708 volts/cm and Vb= 0,98 volts/barrier). To concentration above of 0,1% in mol of Pr6011, the increase of the concentration of this doping, starts to be deleterious to the varistor characteristics. This effects is due to the increase in the concentration of the stannate of praseodymium phase (Pr2Sn207). This crystalline phase with the cassiterita phase (Sn02)was characterized by DRX and EDS and quantified by the refinement of Rietveld. / Neste trabalho investigou-se a influência do dopante Pr6O11 na condutividade elétrica e nas propriedades microestruturais no sistema ternário básico (98,95-x)%SnO2.1,0%CoO.0,05%Ta2O5. As concentrações utilizadas do dopante Pr6O11 variaram em 0,05%, 0,1%, 0,3% e 0,5% em mol, mantendo-se constante as concentrações para o CoO e Ta2O5 . O processamento empregado foi o método convencional de mistura dos óxidos. As amostras foram conformadas a 50 MPa e, sinterizadas a 1350ºC por 2 horas em atmosfera ambiente. Após a sinterização verificou-se densificação das cerâmicas, com valor de 93,63% para o sistema com 0,1% em mol de Pr6O11. O estudo das propriedades elétricas para o sistema varistor SnO2.CoO.Ta2O5 Pr6O11 foi realizado em corrente contínua a temperatura ambiente e, em função da temperatura. Observou-se que a variação na concentração de Pr6O11 altera o comportamento elétrico das cerâmicas. Os parâmetros elétricos encontrados são de [alfa] = 8,0, Er= 319 volts/cm e Vb= 0,66 volts/barreira para o sistema ternário básico e, [alfa] = 17,0, Er= 853 volts/cm e Vb = 1,15 volts/barreira com a adição de 0,10% em mol de Pr6O11. O sistema com 0,05% em mol de Pr6O11 apresenta o mesmo valor do coeficiente de não linearidade do sistema com 0,1 % em mol, entretanto, com valores menores de tensão de ruptura e tensão de barreira (Er= 708 volts/cm e Vb= 0,98 volts/barreira). Para concentrações acima de 0,1% em mol de Pr6O11, o aumento da concentração desse dopante, passa a ser deletério para as características varistoras. Esse efeito é devido ao aumento na concentração da fase cristalina estanato de praseodímio (Pr2Sn2O7). Essa fase cristalina, juntamente com a fase cassiterita (SnO2), foi caracterizada por DRX e por EDS e, quantificadas pelo refinamento de Rietveld.

Neste trabalho, eletrocerâmicas a base de BaTiO3 e Ba(1-x)Erx TiO3 com x(Er3+) = 0,001, 0,010 e 0,050 foram preparadas através do método dos precursores poliméricos, com o propósito de estudar as possíveis relações entre os comportamentos termistor (tipo PTCR) e varistor em nível elétrico e microestrutural. Após calcinação dos pós-precursores em 700°C por 2h, os pós compactados isostaticamente a 300 MPa na forma de pastilhas, foram sinterizados em 1200°C, 1250°C, 1300°C e 1350°C. Foram realizadas caracterizações estruturais e microestruturais aplicando as técnicas de difração de raios X e microscopia eletrônica de varredura por emissão de campo, além de estudos elétricos e dielétricos utilizando a técnica de espectroscopia de impedância como ferramenta principal. Destas caracterizações, verificou-se a obtenção de materiais cerâmicos densos e com valores médios de tamanhos de grãos dependentes de x(Er3+) bem como da temperatura de sinterização. A análise dos resultados de espectroscopia de impedância via circuito equivalente revelaram para as amostras de Ba(1-x)ErxTiO3 que as respostas elétricas podem ser associadas a 3 microrregiões (Modelo Core-Shell): os núcleos e as \"couraças\", ambas relacionadas as porções internas dos grãos cerâmicos, mais os contornos de grãos, respectivamente. Considerando as contribuições resistivas associadas a cada microrregião, em função das tensões e temperaturas aplicadas, os comportamentos varistor e termistor das eletrocerâmicas de Ba(1-x)ErxTiO3 são apresentados e caracterizados em relação ao comportamento das amostras de BaTiO3. No âmbito geral, este trabalho revela uma boa correlação entre estes fenômenos e suas associações a cada microrregião identificada pelos modelos de circuitos equivalentes supostos na literatura. / Electroceramics based on Ba(1-x)ErxTiO3, with x(Er3+) = 0,001, 0,010, 0,050 stoichiometry were synthesized by the polymeric precursors method in an attempt to correlate the possible relations between the PTCR effect and the varistor behavior detected in terms of microstructures by electrical properties. After calcinated at 700°C for 2h, the samples were processed like pellets under isostatically compaction at 300 MPa, and sintered at 1200°C, 1250°C, 1300°C 1350°C, by 3h. Characterizations were made by x-ray diffraction, scanning electron microscopy with field emission gun and impedance spectroscopy, this last one, as the key tool from this work. The results, in general, showed good densification parameters, which are dependent of x(Er3+) and sintering temperature as well. Furthermore, impedance spectroscopy via equivalents circuits, in terms of the series layer model, revealed the appearance of three microregions, which are stated to be in well agreement with the Core-Shell microstructural model. Considering the relation between the resistive response of each microregion, i.e., the nuclei, the intermediary shells and the grain boundaries, it was possible to establish a path to the relation between PTCR effect with the varistor one under the structural, microstructural and electrical peculiarities from the Ba(1-x)ErxTiO3 electroceramic system, in comparison with the pure polycrystalline BaTiO3 behavior.

Nowadays power transmission networks are capable of delivering contracted power from any supplier to any consumer over a large geographic area under market control, and thus transmission lines are incorporated with FACTs series compensated devices to increase the power transfer capability with improvement to system integrity. Conventional fault location methods developed in the past many years are not suitable for FACTs transmission networks. The obvious reason is that FACTs devices in transmission networks introduce non-linearity in the system and hence linear fault detection methods are no longer valid. Therefore, it is still a matter of research to investigate developing new fault detection techniques to cater for modern transmission network configurations and solve implementation issues maintaining required accuracy. This PhD research work is based on developing an accurate and robust new fault location algorithm for series compensated high voltage transmission lines, considering many issues such as transmission line models, configurations with series compensation features. Building on the existing knowledge, a new algorithm has been developed for the estimation of fault location using the time domain approach. In this algorithm, instantaneous fault signals from the transmission line ends are measured and applied to the algorithm to calculate the distance to fault. The new algorithm was tested on two port transmission line model developed using EMTP/ATP software and measured fault data from the simulations are exported to the MATLAB space to run the algorithm. Broad range of faults has been simulated considering various fault cases to test the algorithm and statistical results obtained. It was observed that the accuracy of location of fault on series compensated transmission line using this algorithm is in the range from 99.7 % to 99.9% in 90% of fault cases. In addition, this algorithm was further improved considering many practical issues related to modern series compensated transmission lines (with TCSC var compensators) achieving similar accuracies in the estimation of fault location.

<p>The work presented in this thesis is concerned with the microstructure of zinc oxide varistor materials used in surge protecting devices. This class of material has been characterised with special emphasis on the functional microstructure and the development of the microstructure during sintering. Several different techniques have been used for the analysis, especially scanning electron microscopy (SEM) in combination with electron beam-induced current (EBIC) analysis and <i>in-situ</i> studies of heat-treatment experiments and transmission electron microscopy (TEM) in combination with energy dispersive X-ray spectrometry (EDS) and electron holography. </p><p>Detailed TEM analyses using primarily centred dark-field imaging of grain boundaries, especially triple and multiple grain junctions, were used to reveal the morphological differences between the various Bi₂O₃ phases. The triple and multiple grain junctions were found to exhibit distinct differences in morphology, which could be attributed the difference in structure of the crystalline Bi₂O₃ polymorphs present in the junctions. </p><p>Electrical measurements were performed on individual ZnO/ZnO grain boundaries using EBIC in the SEM. The EBIC signal was found to depend strongly on the geometric properties of the interface and also on the symmetry of the depletion region at the interface. A symmetric double Schottky barrier was never observed in the experiments, but instead barriers with clear asymmetry in the depletion region. Experimental results together with computer simulations show that reasonably small differences in the deep donor concentrations between grains could be responsible for this effect.</p><p>Electron holography in the TEM was used to image the electrostatic potential variation across individual ZnO/ZnO interfaces. The sign of the interface charge, the barrier height (about 0.8 eV) and the depletion region width (100 to 150 nm) were determined from holography data. Asymmetries of the depletion region were also found with this technique. </p><p>The full sintering process of doped ZnO powder granules was studied <i>in-situ</i> in the environmental SEM. The densification and grain growth processes were studied through the sintering cycle. The formation of a functional microstructure in ZnO varistor materials was found to depend strongly on the total pressure.</p>

The work presented in this thesis is concerned with the microstructure of zinc oxide varistor materials used in surge protecting devices. This class of material has been characterised with special emphasis on the functional microstructure and the development of the microstructure during sintering. Several different techniques have been used for the analysis, especially scanning electron microscopy (SEM) in combination with electron beam-induced current (EBIC) analysis and in-situ studies of heat-treatment experiments and transmission electron microscopy (TEM) in combination with energy dispersive X-ray spectrometry (EDS) and electron holography. Detailed TEM analyses using primarily centred dark-field imaging of grain boundaries, especially triple and multiple grain junctions, were used to reveal the morphological differences between the various Bi2O3 phases. The triple and multiple grain junctions were found to exhibit distinct differences in morphology, which could be attributed the difference in structure of the crystalline Bi2O3 polymorphs present in the junctions. Electrical measurements were performed on individual ZnO/ZnO grain boundaries using EBIC in the SEM. The EBIC signal was found to depend strongly on the geometric properties of the interface and also on the symmetry of the depletion region at the interface. A symmetric double Schottky barrier was never observed in the experiments, but instead barriers with clear asymmetry in the depletion region. Experimental results together with computer simulations show that reasonably small differences in the deep donor concentrations between grains could be responsible for this effect. Electron holography in the TEM was used to image the electrostatic potential variation across individual ZnO/ZnO interfaces. The sign of the interface charge, the barrier height (about 0.8 eV) and the depletion region width (100 to 150 nm) were determined from holography data. Asymmetries of the depletion region were also found with this technique. The full sintering process of doped ZnO powder granules was studied in-situ in the environmental SEM. The densification and grain growth processes were studied through the sintering cycle. The formation of a functional microstructure in ZnO varistor materials was found to depend strongly on the total pressure.

Made available in DSpace on 2014-06-11T19:35:05Z (GMT). No. of bitstreams: 0 Previous issue date: 2005-04-14Bitstream added on 2014-06-13T20:06:19Z : No. of bitstreams: 1 marques_vpb_dr_araiq.pdf: 6875606 bytes, checksum: 6e3a2c49ede6d05f9db32af09bf934fc (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Estudos preliminares foram realizados em cerâmicas com propriedades varistoras, à base, SnO2-TiO2-Co2O3, com adições de Nb2O5, Ta2O5, Cr2O3 e Al2O3, preparados por meio de misturas de óxidos em moinho de alta energia, sinterizados em forno tubular na temperatura de 1250ºC durante 90 min em atmosfera de oxigênio, argônio e ambiente. Foram caracterizados quanto à densidade e propriedades elétricas.Terminada essa etapa, o sistema escolhido foi aquele que melhor se adaptou ao propósito do estudo desse trabalho. O sistema escolhido, SnO2-0,75TiO2-0,1Co2O3-0,05Nb2O5 mol %, foi preparado nas mesmas condições que na fase preliminar, sinterizados em atmosfera ambiente, tratados termicamente a 900ºC durante 60 min em atmosfera de oxigênio, e a pressão reduzida (10- 2torr). Em seqüência, essas amostras foram caracterizadas quanto as suas propriedades elétricas (medida tensão-corrente, espectroscopia de impedância e microscopia de força eletrostática) e microestruturais (difração de raios x, microscopia eletrônica de varredura, analise de EDX, analise de EDS, microscopia eletrônica de transmissão e espectroscopia de fotoelétrons induzida por raios x). A medida da altura da barreira foi obtida por meio da técnica de microscopia de força eletrostática através de uma modelagem matemática. / In the present thesis it was studied nonohmic electronic ceramics based on SnO2.TiO2.Co2O3 ternary systems doped with Nb2O5, Ta2O5, Cr2O3 and Al2O3. These systems were prepared using traditional ball milling oxide mixture process. The sintering was conducted using tubular furnace at 1250 ºC for 90 min in different atmospheres: oxygen, argon and ambient atmosphere. Structural, density and electrical properties were investigated in all of the systems. The system presenting superior electrical properties was chosen to be studied concerning relationship between microstructural features and electrical properties. Therefore, SnO2-0.75TiO2-0.1Co2O3-0.05Nb2O5 % mol composition was thermal treated at 900 ºC for 60 min at oxygen-rich and oxygen-poor (10-2torr) atmospheres. After this step, the system was characterized by using different electrical, structural and microstructural techniques (current-voltage, impedance spectroscopy and electronic force image, X-ray diffraction, scanning electronic microscopy (SEM) and energy dispersive x-ray (EDX), energy dispersive spectroscopy (EDS) and transmission electron microscopy (TEM). The potential barrier was mathematical modeled according to electrostatic force images. The mathematical treatment is based on a matrix systems applied to each potential difference existing in the sample. From the solution of the matrix system it is possible to obtain the barrier height as a function of the applied potential.

Des investigations ont été menées concernant la caractérisation des céramiques semi-conductrices à matrice SnO2, en particulier dans des domaines de densités de courant et de champs électriques élevés. L’ensemble du procédé d’élaboration a été analysé et optimisé, de manière à obtenir des composés aux propriétés électriques aptes à l’application varistance. L’addition de plusieurs dopants a été étudiée, et deux éléments ont donné lieu à un comportement électrique remarquable. Le dopage des grains de SnO2 par l’aluminium (III) permet d’accroître leur conductivité apparente et de ce fait, d’obtenir des composants dont la plage de fonctionnement est équivalente à celle observée pour des varistances ZnO. Le silicium apparaît aux joints de grains dans la microstructure des céramiques. Il réduit fortement la surface effective des joints de grains, entrainant une diminution importante de la zone de fonctionnement des varistances. Simultanément, la caractéristique courant-tension est quasi-idéale avec des coefficients de non-linéarité supérieurs à 100 et des profils de variation similaires à ceux observés pour les diodes Zener. La modélisation du mécanisme de conduction au niveau d’un joint de grain SnO2-SnO2 suggère que ces céramiques présentent un potentiel théorique supérieur aux céramiques à base de ZnO du fait d’une largeur de bande interdite plus importante. Enfin, un comparatif technico-économique succinct a ensuite été proposé, afin d’illustrer la compétitivité des deux matériaux pour l’application varistance / Many investigations have been conducted on semiconductive ceramics with a tin dioxide matrix, particularly in the high electric field and high current density ranges. The sintering process has been optimized, in order to obtain compounds with electrical properties compatible with the varistor application. Among the many dopants studied, two elements produced a remarkable electrical behavior. By doping SnO2 grains with Aluminium (III) allows an increase of their apparent conductivity and hence, widens the working range of tin oxide based compounds, up to the ZnO varistors ones. It appears that the silicium is located on the grain boundaries in the ceramic microstructure. This element reduces strongly the effective surface of the grain boundaries and causes an important diminution of the varistors working range. Simultaneously, the current-voltage behavior appears to be like those observed for a Zener diode, with non-linearity coefficients higher than 100 and nearly ideal variation profiles. The conduction modelling in the SnO2-SnO2 grain boundary area reflects that these ceramics present theoretically a higher potential than ZnO based ceramics, due to a wider SnO2 bandgap. A brief technico-economical comparison has been proposed in order to highlight the competitiveness between the two materials for the varistor applications

Made available in DSpace on 2014-06-11T19:29:06Z (GMT). No. of bitstreams: 0 Previous issue date: 2005-02Bitstream added on 2014-06-13T18:38:44Z : No. of bitstreams: 1 coletojunior_u_me_araiq.pdf: 13070684 bytes, checksum: 7666218d601c080eb33edef277a052c3 (MD5) / Neste trabalho foi estudado cerâmicas densas a base de SnO2, utilizando técnicas de Difração de Raios X (DRX), Microscopia Eletrônica de Varredura (MEV) e Transmissão (MET), área de superfície pelo método B.E.T., Análise Térmica, Dilatometria e Caracterização Elétrica, com o objetivo de entender seu comportamento elétrico, para possível utilização como varistor. O primeiro passo foi estudar algumas características do SnO2 dopado com diferentes concentrações de ZnO, tais como densidade, tamanho de grão, limite de solução sólida, formação de precipitados e a concentração ideal de ZnO a ser adicionado ao SnO2 para produção de cerâmicas densas. Em seguida passou-se a estudar o sistema SnO2- ZnO-WO3, obtendo para o novo sistema os mesmos parâmetros estudados no sistema SnO2- ZnO, e também as posições dos dopantes na rede cristalina do SnO2 e as características elétricas do sistema SnO2-ZnO-WO3 para utilização como varistor. E por último pesquisou-se, dando-se ênfase aos estudos de caracterização elétrica, o sistema SnO2-ZnO-WO3 acrescido de novos dopantes, a fim de se obter um varistor de baixa tensão. Obteve-se varistores de média e alta tensão de boa qualidade, com α>50, Er≅1.300 a 19.000V/cm e If=0,08mA/cm2 e varistores de baixa tensão com pequeno comportamento varistor, apresentando α=4,6, Er≅400V/cm e If≅0,4mA/cm2. / In this work it was studied dense ceramic of the SnO2 based, using techniques of XRay Diffraction (XRD), Scanning Electronic Microscopy (SEM) and Transmission (TEM), surface area for the B.E.T. method, Thermal Analysis, Dilatometry and Electric Characterization, with the objective of understanding your electric behavior, for possible use as varistor. The first step was to study some characteristics of SnO2 doped with different concentrations of ZnO, such as density, grain size, limit of solid solution, precipitate formation and the ideal concentration of ZnO to be added at the SnO2 to product dense ceramics. Soon after that we started the study the system SnO2-ZnO-WO3 obtaining for the new system the same parameters studied in the system SnO2-ZnO, and also the positions of the dopings in the crystalline net of SnO2 and the electric characteristics of the system SnO2- ZnO-WO3 for use as varistor. And the last thing it has researched, giving emphasis to the studies of electric characterization, the system SnO2-ZnO-WO3 added of new dopings, trying to obtain a low tension varistor. We obtained medium and high tension varistors of good quality, with α>50, Er≅1,300 to 19,000V/cm and If=0.08mA/cm2 and low tension varistors of bad quality, presenting α=4.6, Er≅400V/cm and If ≅0.4mA/cm2.