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Charge accumulation effects on time transition of partial discharge activity at GIS spacer defects

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1. http://dx.doi.org/10.1109/TDEI.2010.5412024
2. http://hdl.handle.net/2237/14529
3. 1070-9878
4. Dielectrics and Electrical Insulation, IEEE Transactions on. v.17, n.1, 2010, p.247-255

Identifer	oai:union.ndltd.org:NAGOYA/oai:ir.nul.nagoya-u.ac.jp:2237/14529
Date	02 1900
Creators	Okubo, Hitoshi, Endo, Fumihiro, Hayakawa, Naoki, Kojima, Hiroki, Nishizawa, Kanako, Mansour, Diaa-Eldin A
Publisher	IEEE
Source Sets	Nagoya University
Language	English
Detected Language	English
Type	Article(author)
Rights	© 2010 IEEE. Reprinted, with permission, from Mansour Diaa-Eldin A; Nishizawa Kanako; Kojima Hiroki; Hayakawa Naoki; Endo Fumihiro; Okubo Hitoshi, Charge accumulation effects on time transition of partial discharge activity at GIS spacer defects, Dielectrics and Electrical Insulation, IEEE Transactions on, Feb/2010