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Applications of Magnetic Transition Metal Dichalcogenide Monolayers to the Field of Spin-­orbitronics

Magnetic random­access memory (MRAM) devices have been widely studied since the
1960s. During this time, the size of spintronic devices has continued to decrease. Conse quently, there is now an urgent need for new low­dimensional magnetic materials to mimic
the traditional structures of spintronics at the nanoscale. We also require new effective
mechanisms to conduct the main functions of memory devices, which are: reading, writ ing, and storing data.
To date, most research efforts have focused on MRAM devices based on magnetic tun nel junction (MTJ), such as a conventional field­driven MRAM and spin­transfer torque
(STT)­MRAM devices. Consequently, many efforts are currently focusing on new alterna tives using different techniques, such as spin­orbit torque (SOT) and magnetic skyrmions (a
skyrmion is the smallest potential disruption to a uniform magnet required to obtain more
effective memory devices). The most promising memory devices are SOT­MRAMs and
skyrmion­based memories.
This study investigates the magnetic properties of 1T­phase vanadium dichalcogenide (VXY)
Janus monolayers, where X, Y= S, Se, or Te (i.e., monolayers that exhibit inversion symme try breaking due to the presence of different chalcogen elements). This study is developed
along four directions: (I) the nature of the magnetism and the SOT effect of Janus mono layers; (II) the Dzyaloshinskii Moriya interaction (DMI); (III) investigation of stability en hancement by adopting practical procedures for industry; and (IV) study of the effect of a
hexagonal boron nitride (h­BN) monolayer as an insulator on the magnetism of the VXY

monolayer. This study provides a clear perspective for the next generation of memory de vices, such as SOT­MRAMs based on transition metal dichalcogenide monolayers.

Identiferoai:union.ndltd.org:kaust.edu.sa/oai:repository.kaust.edu.sa:10754/670961
Date09 1900
CreatorsSmaili, Idris
ContributorsSchwingenschlögl, Udo, Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division, Manchon, Aurelien, El-Atab, Nazek, Laquai, Frédéric, Larsson, Andreas
Source SetsKing Abdullah University of Science and Technology
LanguageEnglish
Detected LanguageEnglish
TypeDissertation
Rights2022-09-05, At the time of archiving, the student author of this dissertation opted to temporarily restrict access to it. The full text of this dissertation will become available to the public after the expiration of the embargo on 2022-09-05.

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