In this paper SAM (self-assembled monolayers) is used to passivate cobalt microbumps for 3D-stacking of Si chips. The SAM deposition process is optimized, using input from characterization techniques such as water contact angle measurement, ATR, AFM and XPS analysis in order to form a monolayer of Thiols-SAM on cobalt microbumps. A 3D stacked Si chips test vehicle was used to demonstrate the effectiveness of the SAM coating on cobalt bumps by measuring the electrical continuity of daisy chains.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:bsz:ch1-qucosa-207172 |
| Date | 22 July 2016 |
| Creators | Hou, Lin, Derakhshandeh, Jaber, Armini, Silvia, Gerets, Carine, De Preter, Inge, June Rebibis, Kenneth, Miller, Andy, De wolf, Ingrid, Beyne, Eric |
| Contributors | TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik |
| Publisher | Universitätsbibliothek Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:conferenceObject |
| Format | application/pdf, text/plain, application/zip |
| Source | AMC 2015 – Advanced Metallization Conference |
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