Double-sided module exhibits electrical and thermal characteristics that are superior to wire-bonded counterpart. Such structure, however, induces more than twice the thermo-mechanical stress in a single-layer structure. Compressive posts have been developed and integrated into the double-sided module to reduce the stress to a level acceptable by silicon dice. For a 14 mm x 21 mm module carrying 6.6 mm x 6.6 mm die, finite-element simulation suggested an optimal design having four posts located 1 mm from the die; the z-direction stress at the chip was reduced from 17 MPa to 0.6 MPa. / Ph. D.
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/51170 |
| Date | 06 January 2015 |
| Creators | Kim, Woochan |
| Contributors | Electrical and Computer Engineering, Ngo, Khai D. T., Agah, Masoud, Guido, Louis J., Ekkad, Srinath, Lu, Guo Quan |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Detected Language | English |
| Type | Dissertation |
| Format | ETD, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
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