Made available in DSpace on 2014-12-17T14:07:01Z (GMT). No. of bitstreams: 1
NataliaFD_DISSERT.pdf: 4136751 bytes, checksum: 47b384d6442f251d58542735c23ae300 (MD5)
Previous issue date: 2012-02-27 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / Titanium nitride films were grown on glass using the Cathodic Cage Plasma Deposition
technique in order to verify the influence of process parameters in optical and structural
properties of the films. The plasma atmosphere used was a mixture of Ar, N2 and H2,
setting the Ar and N2 gas flows at 4 and 3 sccm, respectively and H2 gas flow varied
from 0, 1 to 2 sccm. The deposition process was monitored by Optical Emission
Spectroscopy (OES) to investigate the influence of the active species in plasma. It was
observed that increasing the H2 gas flow into the plasma the luminescent intensities
associated to the species changed. In this case, the luminescence of N2 (391,4nm)
species was not proportional to the increasing of the H2 gas into the reactor. Other
parameters investigated were diameter and number of holes in the cage. The analysis
by Grazing Incidence X-Ray Diffraction (GIXRD) confirmed that the obtained films are
composed by TiN and they may have variations in the nitrogen amount into the crystal
and in the crystallite size. The optical microscopy images provided information about the
homogeneity of the films. The atomic force microscopy (AFM) results revealed some
microstructural characteristics and surface roughness. The thickness was measured by
ellipsometry. The optical properties such as transmittance and reflectance (they were
measured by spectrophotometry) are very sensitive to changes in the crystal lattice of
the material, chemical composition and film thicknesses. Therefore, such properties are
appropriate tools for verification of this process control. In general, films obtained at 0
sccm of H2 gas flow present a higher transmittance. It can be attributed to the smaller
crystalline size due to a higher amount of nitrogen in the TiN lattice. The films obtained
at 1 and 2 sccm of H2 gas flow have a golden appearance and XRD pattern showed
peaks characteristics of TiN with higher intensity and smaller FWHM (Full Width at Half
Maximum) parameter. It suggests that the hydrogen presence in the plasma makes the
films more stoichiometric and becomes it more crystalline. It was observed that with
higher number of holes in the lid of the cage, close to the region between the lid and the
sample and the smaller diameter of the hole, the deposited film is thicker, which is
justified by the most probability of plasma species reach effectively the sample and it
promotes the growth of the film / Filmes finos de nitreto de tit?nio foram crescidos sobre vidro utilizando a t?cnica de
deposi??o por descarga em gaiola cat?dica a fim de averiguar a influ?ncia das vari?veis
de processo nas propriedades ?pticas e estruturais do filme. Como atmosfera do
plasma foi utilizada a mistura de gases Ar, N2 e H2, fixando o fluxo de Ar e N2 em 4 e 3
sccm, respectivamente, e usando fluxos de 0, 1 e 2 sccm de H2. O processo de
deposi??o foi monitorado por Espectroscopia de Emiss?o ?ptica (OES) para
investiga??o das esp?cies ativas no plasma. Observou-se que com o aumento fluxo de
H2 as intensidades das esp?cies luminescentes no plasma sofrem altera??es e que a
esp?cie N2 (391,4 nm) n?o teve um crescimento proporcional ao fluxo de H2. Outros
par?metros investigados foram o di?metro e o n?mero de furos da gaiola. As an?lises
de difra??o de raios X com ?ngulo de incid?ncia rasante (GIXRD) comprovaram que os
filmes obtidos s?o compostos por TiN, podendo ter varia??es quanto a quantidade de
nitrog?nio na rede e o tamanho de cristalito; a microscopia ?ptica forneceu dados sobre
a homogeneidade, a partir da microscopia de for?a at?mica (AFM) observou-se
algumas caracter?sticas microestruturais do filme e a rugosidade. A espessura foi
quantificada atrav?s das an?lises de elipsometria. As propriedades ?pticas como
reflet?ncia e transmit?ncia (medidas por espectrofotometria) s?o bastante sens?veis a
altera??es na rede cristalina do material, composi??o qu?mica e espessura, sendo,
portanto, uma boa ferramenta para verifica??o do controle do processo. De maneira
geral, os filmes obtidos com fluxo de 0 sccm de H2 possuem uma maior transmit?ncia
atribu?da ao menor cristalinidade decorrente da maior quantidade de nitrog?nio na rede
cristalina do TiN. Os filmes obtidos nos fluxos de 1 e 2 sccm de H2 obtiveram um
aspecto dourado e o difratograma apresentou picos caracter?sticos do TiN com maior
intensidade e menor largura a meia altura, sugerindo que com a presen?a de hidrog?nio
na atmosfera do plasma os filmes s?o mais estequiom?tricos e com maior
cristalinidade. Quanto ? configura??o da gaiola observou-se que com maior quantidade
de furos na tampa, maior a proximidade da tampa com a amostra e menor o di?metro
do furo, maior ? a espessura do filme, o que ? justificado pela maior probabilidade das
esp?cies do plasma atingirem efetivamente o substrato e promoverem o crescimento do
filme
| Identifer | oai:union.ndltd.org:IBICT/oai:repositorio.ufrn.br:123456789/12735 |
| Date | 27 February 2012 |
| Creators | Daudt, Natalia de Freitas |
| Contributors | CPF:09621199468, http://lattes.cnpq.br/7441669258580942, Tapia, Gabriel Ivan Medina, CPF:00771013914, http://lattes.cnpq.br/8261802645447265, Massi, Marcos, CPF:05722120898, http://lattes.cnpq.br/1992108703603111, Alves J?nior, Clodomiro |
| Publisher | Universidade Federal do Rio Grande do Norte, Programa de P?s-Gradua??o em Ci?ncia e Engenharia de Materiais, UFRN, BR, Processamento de Materiais a partir do P?; Pol?meros e Comp?sitos; Processamento de Materiais a part |
| Source Sets | IBICT Brazilian ETDs |
| Language | Portuguese |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, info:eu-repo/semantics/masterThesis |
| Format | application/pdf |
| Source | reponame:Repositório Institucional da UFRN, instname:Universidade Federal do Rio Grande do Norte, instacron:UFRN |
| Rights | info:eu-repo/semantics/openAccess |
Page generated in 0.0026 seconds