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Towards high electron mobility in Gan(0001) based InGaN and AlGaN heterostructures / Hohe Elektronenbeweglichkeit in GaN(0001) basierten InGaN und AlGaN Heterostrukturen

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1. http://hdl.handle.net/11858/00-1735-0000-0006-B53A-9
2. urn:nbn:de:gbv:7-webdoc-3250-8
3. webdoc-3250
4. 686731433

Identifer	oai:union.ndltd.org:uni-goettingen.de/oai:ediss.uni-goettingen.de:11858/00-1735-0000-0006-B53A-9
Date	28 October 2011
Creators	Broxtermann, Daniel
Contributors	Rizzi, Angela Prof. Dr.
Source Sets	Georg-August-Universität Göttingen
Language	English
Detected Language	English
Type	doctoralThesis
Format	application/pdf
Rights	http://creativecommons.org/licenses/by-nc-nd/3.0/