I propose compact models of single-gate (SG) and double-gate (DG) JFETs predicting the current-voltage characteristics for both long and short channel devices. In order to make the current equation continuous through all operating conditions from subthreshold to well-above threshold, without non-physical fitting parameters, mobile carriers in depletion region are considered. For describing the short channel behavior, relevant parameters extracted from the two-dimensional analytical solution of Poisson's equation are used for modifying long channel equations. Comparisons of models with the numerical simulation showing close agreement are presented. Based on models, merits of DG JFET over SG JFET and SG MOSFET are discussed by examining the schematic circuit diagram describing the relation between gate and channel potentials for each device. / text
| Identifer | oai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/ETD-UT-2009-05-65 |
| Date | 03 September 2009 |
| Creators | Chang, Jiwon, active 2013 |
| Source Sets | University of Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis |
| Format | application/pdf |
Page generated in 0.0015 seconds