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Development of Bi-Directional Module using Wafer-Bonded Chips

Double-sided module exhibits electrical and thermal characteristics that are superior to wire-bonded counterpart. Such structure, however, induces more than twice the thermo-mechanical stress in a single-layer structure. Compressive posts have been developed and integrated into the double-sided module to reduce the stress to a level acceptable by silicon dice. For a 14 mm x 21 mm module carrying 6.6 mm x 6.6 mm die, finite-element simulation suggested an optimal design having four posts located 1 mm from the die; the z-direction stress at the chip was reduced from 17 MPa to 0.6 MPa. / Ph. D.

Identiferoai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/51170
Date06 January 2015
CreatorsKim, Woochan
ContributorsElectrical and Computer Engineering, Ngo, Khai D. T., Agah, Masoud, Guido, Louis J., Ekkad, Srinath, Lu, Guo Quan
PublisherVirginia Tech
Source SetsVirginia Tech Theses and Dissertation
Detected LanguageEnglish
TypeDissertation
FormatETD, application/pdf
RightsIn Copyright, http://rightsstatements.org/vocab/InC/1.0/

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