In this paper, we propose a high-yield self-aligned process to form a silicon-on-insulator MOSFET with block oxide for 1T DRAM use. The new process can overcome the problem of the previous one [1], which cannot be used for a thin BOX devices. Based on the TCAD 10.0 simulation, we compared the conventional 1T-DRAM (PDSOI) with the partially depleted SOI with block oxide ¡]bPDSOI¡^ which used the new process presented in this thesis, We find that the device with block oxide embedded on body is not only obtain good short-channel effects immunity but also reduce leakage of the P-N junction between source/drain and the body and increase the gate controlability on the channel region. Moreover, it can decrease power consumption and raise the operation speed of the 1T-DRAM. Compare to the PDSOI DRAM to carry out 10 £gA programming window, the power consumption of the new 1T-DRAM is diminished 39% of write ¡§1¡¨ and 25% of write ¡§0¡¨. Furthermore, the energy consumption during memory operation is only 23% compared to that of the conventional PDSOI DRAM and it can short the operation time but achieve a long retention time.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0804109-175443 |
| Date | 04 August 2009 |
| Creators | Tseng, Yi-ming |
| Contributors | James B. Kuo, Jyi-Tsong Lin, Chun-Hsing shih, Yao-Tsung Tsai, Wen-Kuan Yeh |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-175443 |
| Rights | not_available, Copyright information available at source archive |
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