Spectroscopic ellipsometry is emerging as a
routine tool
for in-situ and ex-situ thin-film
characterization in
semiconductor manufacturing. For interconnects
in ULSI
circuits, diffusion barriers of below 10 nm
thickness are
required and precise thickness control of the
deposited
layers is indispensable. In this work, we
studied single
films of tantalum and two stoichiometries of
tantalum
nitride as well as TaN/Ta film stacks both on
bare and
oxidized silicon. Spectroscopic ellipsometry
from the
UV to the NIR was applied to determine the
optical
properties of the films for subsequent modeling
by a
Lorentz-Drude approach. These models were
successfully applied to TaN/Ta thin-film stacks
where
the values of the film thickness could be
determined
exactly. Moreover, it is shown that considerable
differences in the optical properties arise from
both film
thickness and substrate.
<br>
<br>
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<br>
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa.de:swb:ch1-200701043 |
| Date | 18 June 2007 |
| Creators | Waechtler, Thomas, Gruska, Bernd, Zimmermann, Sven, Schulz, Stefan E., Gessner, Thomas |
| Contributors | TU Chemnitz, Fakultät für Elektrotechnik und Informationstechnik, IEEE, |
| Publisher | Universitätsbibliothek Chemnitz |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | doc-type:conferenceObject |
| Format | application/pdf, text/plain, application/zip |
| Source | 8th International Conference on Solid-State and Integrated Circuit Technology 2006 (ICSICT '06), Oct. 23-26, 2006, Shanghai, China. Proceedings, p. 2184-2186 |
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