A near infrared waveguide photodetector in Si-based ternary Si₁âxâyGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3985 |
| Date | 01 1900 |
| Creators | Li, Baojun, Chua, Soo-Jin, Fitzgerald, Eugene A., Leitz, Christopher W., Miao, Lingyun |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 484917 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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