• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 2
  • 1
  • 1
  • Tagged with
  • 4
  • 4
  • 2
  • 2
  • 1
  • 1
  • 1
  • 1
  • 1
  • 1
  • 1
  • 1
  • 1
  • 1
  • 1
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

The effect of CuInSe2 thin film property of ZnSeTe window layer

Ho, Hsieh-Chia 27 July 2002 (has links)
Abract This paper concems studies of CIS solar cell based on ZnSe an ZnSeTe window layer. ZnSe an ZnSeTe films are grown by Molecular Beam Deposition (MBD).This research is important for several reasons : (1)Development of non-cadmium buffer layer may be essential for CIS solar cells to be accepted in the marketplace ; (2)Development of direct ZnO/CIS cells could lead to a simplified cell (3)knowledge gained in investigations of ZnO and ZnSeTe buffer layer may help us understand the unique role CdS plays in CdS/CIS solar cell .
2

Characterization of GaN grown on tilt-cut £^-LiAlO 2 by molecular beam epitaxy for different growth temperatures

Lin, Yu-Chiao 19 July 2011 (has links)
We study the properties of m-plane GaN structure on LiAlO 2 substrate grown by plasma-assisted molecular-beam epitaxy (PAMBE). Lattice parameters of LiAlO 2 are close to GaN, the interface between LiAlO 2 and GaN showed a good lattice matching. Low lattice mismatch can reduce the defect generation, improve crystal quality. However, lattice mismatch still exist, more or less density of defect still can be observed. The density of defect was reduced in the sample at high temperature. In this study, we investigate GaN on LiAlO 2 by scanning electron microscope (SEM), atomic force microscope (AFM), photoluminescence (PL) and X-ray diffraction (XRD) for different growth temperatures.
3

SiGeC Near Infrared Photodetectors

Li, Baojun, Chua, Soo-Jin, Fitzgerald, Eugene A., Leitz, Christopher W., Miao, Lingyun 01 1900 (has links)
A near infrared waveguide photodetector in Si-based ternary Si₁−x−yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm. / Singapore-MIT Alliance (SMA)
4

Development and Application of Machine Learning Methods to Selected Problems of Theoretical Solid State Physics

Hoock, Benedikt Andreas 16 August 2022 (has links)
In den letzten Jahren hat sich maschinelles Lernen als hilfreiches Werkzeug zur Vorhersage von simulierten Materialeigenschaften erwiesen. Somit können aufwendige Berechnungen mittels Dichtefunktionaltheorie umgangen werden und bereits bekannte Materialien besser verstanden oder sogar neuartige entdeckt werden. Eine zentrale Rolle spielt dabei der Deskriptor, ein möglichst interpretierbarer Satz von Materialkenngrößen. Diese Arbeit präsentiert einen Ansatz zur Auffindung von Deskriptoren für periodische Multikomponentensysteme, deren Eigenschaften durch die genaue atomare Anordnung mitbeinflusst wird. Primäre Features von Einzel-, Paar- und Tetraederclustern werden über die Superzelle gemittelt und weiter algebraisch kombiniert. Aus den so erzeugten Kandidaten wird mittels Dimensionalitätsreduktion ein geeigneter Deskriptor identifiziert. Zudem stellt diese Arbeit Strategien vor bei der Modellfindung Kreuzvalidierung einzusetzen, sodass stabilere und idealerweise besser generalisierbare Deskriptoren gefunden werden. Es werden außerdem mehrere Fehlermaße untersucht, die die Qualität der Deskriptoren bezüglich Genauigkeit, Komplexität der Formeln und Berücksichtung der atomaren Anordnung charakterisieren. Die allgemeine Methodik wurde in einer teilweise parallelisierten Python-Software implementiert. Als konkrete Problemstellungen werden Modelle für die Gitterkonstante und die Mischenergie von ternären Gruppe-IV Zinkblende-Legierungen "gelernt", mit einer Genauigkeit von 0.02 Å bzw. 0.02 eV. Datenbeschaffung, -analyse, und -bereinigung werden im Hinblick auf die Zielgrößen als auch auf die primären Features erläutert, sodass umfassende Analysen und die Parametrisierung der Methodik an diesem Testdatensatz durchgeführt werden können. Als weitere Anwendung werden Gitterkonstante und Bandlücken von binären Oktett-Verbindungen vorhergesagt. Die präsentierten Deskriptoren werden mit den Fehlermaßen evaluiert und ihre physikalische Relevanz wird abschließend disktutiert. / In the last years, machine learning methods have proven as a useful tool for the prediction of simulated material properties. They may replace effortful calculations based on density functional theory, provide a better understanding of known materials or even help to discover new materials. Here, an essential role is played by the descriptor, a desirably interpretable set of material parameters. This PhD thesis presents an approach to find descriptors for periodic multi-component systems where also the exact atomic configuration influences the physical characteristics. We process primary features of one-atom, two-atom and tetrahedron clusters by an averaging scheme and combine them further by simple algebraic operations. Compressed sensing is used to identify an appropriate descriptor out from all candidate features. Furthermore, we develop elaborate cross-validation based model selection strategies that may lead to more robust and ideally better generalizing descriptors. Additionally, we study several error measures which estimate the quality of the descriptors with respect to accuracy, complexity of their formulas and the capturing of configuration effects. These generally formulated methods were implemented in a partially parallelized Python program. Actual learning tasks were studied on the problem of finding models for the lattice constant and the energy of mixing of group-IV ternary compounds in zincblende structure where an accuracy of 0.02 Å and 0.02 eV is reached, respectively. We explain the practical preparation steps of data acquisition, analysis and cleaning for the target properties and the primary features, and continue with extensive analyses and the parametrization of the developed methodology on this test case. As an additional application we predict lattice constants and band gaps of octet binary compounds. The presented descriptors are assessed quantitatively by the error measures and, finally, their physical meaning is discussed.

Page generated in 0.0839 seconds