We attempted to fabricate the CuInSe2:Sb thin-film solar cells with a Al/ZnO:Al(AZO)/ ZnSe /CuInSe2:Sb /Mo/soda-lime glass(SLG) structure. The growth of CuInSe2 film in the presence of Sb can effectively improve the surface morphology and benefit the growth of the device. A ZnSe buffer layer has been applied as an attractive alternative to a CdS buffer layer, thus eliminating environment from pollution.
By varying the Ar pressure during the deposition, the Mo bilayer has been fabricated with both low resistivity and good adhesion. Currently the tensile stress was maintained below 100MPa, and the lowest sheet resistance achieved 0.205(£[/¡¼). The fabrication condition with a 5-cm sputtering distance could provide the lowest resistivity of 1.73¡Ñ10-3 (£[-cm) in the AZO thin-film that shows a transmittance of above 80¢Min the visible range. Applying the technology of optical lithography to deposit the Al metal front grid, the Al/ AZO ohmic contact resistance was improved.
The energy conversion efficiency of the CIS thin-film solar cell (Al/ AZO/ ZnSe /CuInSe2 /Mo/ SLG) was 4.4¢M(Voc =0.41 V¡AI sc = 3.9 mA ¡AFF = 69 ¢M) by applying the irradiation with a solar simulator under one-sun (AM1.5, 100mW/cm2) conditions. However, the efficiency of CIS:Sb solar cell (Al/ AZO/ ZnSe /CuInSe2 :Sb /Mo/ SLG) was improved to to 6.0¢M(Voc =0.43 V¡AI sc = 5.15 mA ¡AFF = 68 ¢M). This result indicates that the CIS film growth with Sb can increase the short-circuit current.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0717107-180738 |
| Date | 17 July 2007 |
| Creators | Ho, Chia-tai |
| Contributors | Mau-Phon Houng, Bae-Heng Tseng, Ming-Chi Chou, Bing-Hwai Hwang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717107-180738 |
| Rights | not_available, Copyright information available at source archive |
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