none

<div>Because of the limited reserve of fossil fuels and issues brought up by their combustion, the demand on renewable energy is considerably increasing. Solar energy is one of the most promising renewable energy sources considering the large amount of solar irradiation received by Earth and solar cell is such a device that allows us to directly convert sunlight directly into electricity. In this thesis, kesterite (I2-II-IV-IV4) system is the main focus as the light absorber material in thin film solar cells.</div><div><br></div><div>Cu2ZnSn(S,Se)4 (CZTSSe) has been first studied intensively. However, due to the band tailing resulting from Cu-Zn anti-site defects, further improvement on power conversion efficiency of this material has been hindered. Substituting Cu with Ag is expected to solve this problem by decreasing this defect density as a result of the high formation energy of Ag-Zn antisite defects. Herein, different concentrations of Ag are used to substitute Cu in the kesterite system through a nanoparticle-ink route for the fabrication of light absorber thin films. For Ag-alloying concentration less than 50%, it suggests that the Ag can induce inhomogeneity as well as secondary phase formation during nanoparticle formation. Moreover, Ag alloying is shown to enlarge the grain size and reduce film roughness after selenization, which are beneficial for the optoelectronic properties and device performance.</div><div><br></div><div>Additionally, the synthesis process for kesterite Ag2ZnSnS4 nanoparticles is explored. AZTS nanoparticles are achieved by solvent-thermal reaction. The reaction pathway during reaction is investigated by different material characterization methods to shed light on the Ag-based nanoparticle synthesis. The final nanoparticles obtained have high crystallinity and homogeneous composition, demonstrating great potential as light absorber materials. Also, the sulfide nanoparticles are converted into selenide thin films in Se vapor at elevated temperature (selenization). The selenization conditions, including temperature, heating ramp and selenization time, are optimized for the pure phase kesterite AZTSe thin films with large and dense grains. The optoelectronic properties are explored on these films and an initial research already demonstrates a 0.35% power conversion efficiency as the first solution processed AZTSe device.</div><div><br></div><div>In summary, multiple material characterization techniques are utilized to understand the microstructure evolution, phase transformation, and composition change for solution-processed nanoparticles and their resulting thin films. The material characteristics, process methods and film optoelectronic properties are associated for the future analysis and development of kesterite thin films for photovoltaic applications.</div><div><br></div>

We attempted to fabricate the CuInSe2:Sb thin-film solar cells with a Al/ZnO:Al(AZO)/ ZnSe /CuInSe2:Sb /Mo/soda-lime glass(SLG) structure. The growth of CuInSe2 film in the presence of Sb can effectively improve the surface morphology and benefit the growth of the device. A ZnSe buffer layer has been applied as an attractive alternative to a CdS buffer layer, thus eliminating environment from pollution. By varying the Ar pressure during the deposition, the Mo bilayer has been fabricated with both low resistivity and good adhesion. Currently the tensile stress was maintained below 100MPa, and the lowest sheet resistance achieved 0.205(£[/¡¼). The fabrication condition with a 5-cm sputtering distance could provide the lowest resistivity of 1.73¡Ñ10-3 (£[-cm) in the AZO thin-film that shows a transmittance of above 80¢Min the visible range. Applying the technology of optical lithography to deposit the Al metal front grid, the Al/ AZO ohmic contact resistance was improved. The energy conversion efficiency of the CIS thin-film solar cell (Al/ AZO/ ZnSe /CuInSe2 /Mo/ SLG) was 4.4¢M(Voc =0.41 V¡AI sc = 3.9 mA ¡AFF = 69 ¢M) by applying the irradiation with a solar simulator under one-sun (AM1.5, 100mW/cm2) conditions. However, the efficiency of CIS:Sb solar cell (Al/ AZO/ ZnSe /CuInSe2 :Sb /Mo/ SLG) was improved to to 6.0¢M(Voc =0.43 V¡AI sc = 5.15 mA ¡AFF = 68 ¢M). This result indicates that the CIS film growth with Sb can increase the short-circuit current.

No description available.

The energy crisis and environmental consciousness arising in recent years induce the rapid development of renewable energy technology, especially in solar energy field. Under the policy support of Germany and Japan, the solar energy market expands to the world speedily. Moreover, due to the high values of environmental protection topics in United Nations and European Union and Kyoto Protocol establishment, the renewable energy industry is imperative to prevail among the world. As a result of the industrial rapid growth, companies adopt all kinds of tactics to develop capability in order to occupy the renewable energy market. Thanks to the remarkable achievement in LCD-TFT and semiconductor industries, Taiwan manufacturers applied the past experiences to invest in the solar cell industry, especially in thin film solar cell product. During 2005 to 2007, many companies found one after another. This research mainly probes into the trend of Taiwan thin film solar cell industry. First, understand the competitors and global market conditions, then penetrate the industrial structure with Porter¡¦s five forces model, discuss the competitive advantage of Taiwan with Porter¡¦s diamond model, and look for the competitive ability of Taiwan thin film solar cell industry by SWOT analysis. Finally, the research proposes some developing suggestions for Taiwan thin film solar cell industry.

Tin(II) sulfide (SnS) is an earth-abundant, inexpensive, and non-toxic absorber material for thin film solar cells. SnS films are deposited by atomic layer deposition (ALD) through the reaction of a tin precursor, bis(N,N'-diisopropylacetamidinato)tin(II), and hydrogen sulfide. The SnS films demonstrate excellent surface morphology, crystal structure, phase purity, stoichiometry, elemental purity, and optical and electrical properties. / Engineering and Applied Sciences

Nanometer-scale silicon shows extraordinary electronic and optical properties that are not available for bulk silicon, and many investigations toward applications in optoelectronic devices are being pursued. Silicon nanoparticle films made from solution are a promising candidate for low-cost solar cells. However, controlling the properties of silicon nanoparticles is quite a challenge, in particular shape and size distribution, which effect device performance. At present, none of the solar cells made from silicon nanoparticle films have an efficiency exceeding the efficiency of those based on crystalline silicon. To address the challenge of controlling silicon nanoparticle properties, both theoretical and experimental investigations are needed. In this thesis, we investigate silicon nanoparticle properties via quantum mechanical modeling of silicon nanoparticles and synthesis of silicon nanoparticle films via colloidal grinding. Silicon nanoparticles with shapes including cubic, rectangular, ellipsoidal and flat disk are modeled using semi-empirical methods and configuration interaction. Their electronic properties with different surface passivation were also studied. The results showed that silicon nanoparticles with hydrogen passivation have higher HOMOLUMO gaps, and also the HOMO-LUMO gap depends on the size and the shape of the particle. In contrast, silicon nanoparticles with oxygen passivation have a lower HOMO-LUMO gap. Raman spectroscopy calculation of silicon nanoparticles show peak shift and asymmetric broadening similar to what has been observed in experiment. Silicon nanoparticle synthesis via colloidal grinding was demonstrated as a straightforward and inexpensive approach for thin film solar cells. Data analysis of silicon particles via SEM images demonstrated that colloidal grinding is effective in reducing the Si particle size to sub-micron in a short grinding time. Further increases in grinding time, followed by filtration demonstrated a narrowing of the Si particle size and size-distribution to an average size of 70 nm. Raman spectroscopy and EDS data demonstrated that the Si nanoparticles contain oxygen due to exposure to air during grinding. I-V characterization of the milled Si nanoparticles showed an ohmic behaviour with low current at low biases then Schottky diode behaviour or a symmetric curve at large biases. / Graduate / 0794 / 0544 / zahraalbu@hotmail.com

Nanometer-scale silicon shows extraordinary electronic and optical properties that are not available for bulk silicon, and many investigations toward applications in optoelectronic devices are being pursued. Silicon nanoparticle films made from solution are a promising candidate for low-cost solar cells. However, controlling the properties of silicon nanoparticles is quite a challenge, in particular shape and size distribution, which effect device performance. At present, none of the solar cells made from silicon nanoparticle films have an efficiency exceeding the efficiency of those based on crystalline silicon. To address the challenge of controlling silicon nanoparticle properties, both theoretical and experimental investigations are needed. In this thesis, we investigate silicon nanoparticle properties via quantum mechanical modeling of silicon nanoparticles and synthesis of silicon nanoparticle films via colloidal grinding. Silicon nanoparticles with shapes including cubic, rectangular, ellipsoidal and flat disk are modeled using semi-empirical methods and configuration interaction. Their electronic properties with different surface passivation were also studied. The results showed that silicon nanoparticles with hydrogen passivation have higher HOMOLUMO gaps, and also the HOMO-LUMO gap depends on the size and the shape of the particle. In contrast, silicon nanoparticles with oxygen passivation have a lower HOMO-LUMO gap. Raman spectroscopy calculation of silicon nanoparticles show peak shift and asymmetric broadening similar to what has been observed in experiment. Silicon nanoparticle synthesis via colloidal grinding was demonstrated as a straightforward and inexpensive approach for thin film solar cells. Data analysis of silicon particles via SEM images demonstrated that colloidal grinding is effective in reducing the Si particle size to sub-micron in a short grinding time. Further increases in grinding time, followed by filtration demonstrated a narrowing of the Si particle size and size-distribution to an average size of 70 nm. Raman spectroscopy and EDS data demonstrated that the Si nanoparticles contain oxygen due to exposure to air during grinding. I-V characterization of the milled Si nanoparticles showed an ohmic behaviour with low current at low biases then Schottky diode behaviour or a symmetric curve at large biases. / Graduate / 0794 / 0544 / zahraalbu@hotmail.com

京都大学 / 0048 / 新制・課程博士 / 博士(エネルギー科学) / 甲第21884号 / エネ博第385号 / 新制||エネ||75(附属図書館) / 京都大学大学院エネルギー科学研究科エネルギー基礎科学専攻 / (主査)教授 佐川 尚, 教授 萩原 理加, 教授 野平 俊之 / 学位規則第4条第1項該当 / Doctor of Energy Science / Kyoto University / DGAM

Direct conversion of solar energy, which is the most powerful and unlimited one among the renewable energy sources / into the electrical energy by the photovoltaic devices, is a promising way of meeting the energy needs of future. Thin film semiconductor materials show great promise for the production of efficient, low-cost solar cell devices. Recently advanced research on thin film photovoltaics in all aspects, has attracted intense attention. Thin film semiconductors for the photovoltaic applications are deposited in large areas by different methods. In this study, deposition and characterization of CuIn1-x GaxSe2 ( CIGS ) semiconductor thin films by thermal evaporation and e-beam evaporation methods were investigated. Material properties and deposition parameters of the thin films are aimed to be optimized for solar cell applications. Structural properties of the deposited CIGS thin films were examined through X-ray diffraction and Energy Dispersive X-ray Analysis. The temperature dependent electrical conductivity, Hall effect and photoconductivity of these samples have been measured between 100 and 400 K. For the optical characterization of CIGS thin films, the transmission measurements have been carried out in the wavelength region of 325-900 nm. The changes in the structural, electrical and optical properties of samples through post-depositional annealing effect were also analyzed.