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Reliable and scalable manufacturing of nanofabrics entails significant challenges. Scalable nano-manufacturing approaches that employ the use of lithographic masks in conjunction with nanofabrication based on self-assembly have been proposed. A bottom-up fabrication of nanoelectronic circuits is expected to be subject to various defects and identifying the types of defects that may occur during each step of a manufacturing pathway is essential in any attempt to achieve reliable manufacturing. This thesis aims at analyzing the sources of defects in a nano-manufacturing flow and estimating the resulting yield loss. It integrates physical fabric considerations, manufacturing sequences and the resulting defect scenarios. This is in contrast to most current approaches that use conventional defect models and assume constant defect rates without analyzing the manufacturing pathway to determine the sources of defects and their probabilities. The manufacturing pathway will be analyzed for identifying the defects introduced during each manufacturing step in the sequence, followed by yield loss estimation.

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Research groups around the world are looking to develop a qubit protected from decoherence for achieving quantum advantage in computations. This would have huge impact on the modern world. The applications are many from drug development to cryptography and many more  elds. Indium-Arsenide Nanowires with an epitaxially matched thin  lm of lead grown with Select-Area-Growth could prove to be a platform for building scalable qubits. The work in this thesis is to create a device capable of measuring the superconductivity of the samples InAs-Pb grown at the Center for Quantum Devices, Niels Bohr Institute. The InAs semiconducting nanowires serves as one dimensional system that could host Majorana Zero Modes if coupled to a superconductor such as Pb. The MZMs emerges at the edges of the nanowires. The device created is a 4-probe device that should be used to measure the induced topological superconductivity inside the device. The project was able to such a device using electron beam lithography techniques and development of the fabrication process of InAs-Pb SAG NW Devices was furthered.

<p>Carbon nanotubes (CNTs) are arguably the most widely studied material within the field of nanotechnology. The impressive physical and electronic properties of these materials have led to their investigation in a diverse range of applications. In recent years, the deposition of inorganic nanoparticles upon the surface of CNTs has received much attention. Research within this field has been driven by the desire to develop new composite materials exhibiting novel electronic, optical, and catalytic properties. In addition to the decoration of individual nanotubes, several groups have also investigated the use of CNT thin films as scaffolds for the assembly of inorganic nanostructures as well as other secondary components, including polymers and biomaterials. Nanotube films exhibit a number of physical properties that make them suitable for such applications, displaying impressive electrical conductivity, flexibility, and thermal stability while also possessing a high surface area upon which chemical modification can be conducted.</p><p>This thesis presents work that demonstrates the potential of CNT thin films as flexible conductive scaffolds for the support of a variety of inorganic nanostructures. Procedures are described for the preparation of SWNT -Au nanoparticle composite films that, as subsequently demonstrated, are suitable substrates for the growth of III-V semiconductor nanowires using gas-source molecular beam epitaxy. At the time of writing, the majority of published research within this field focused upon the preparation of SWNT composite films containing spherical metallic or semiconductor nanoparticles. In contrast, the growth of semiconductor nanowires upon nanotube thin films had not been explored. The work described in this thesis therefore represents the development of a novel composite material that combines the flexibility of CNT films with the unique optoeletronic properties exhibited by semiconductor nanowires. The development of functional electronic devices incorporating these materials is also discussed, as is the extension of the methods developed to investigate novel composite materials that combine other inorganic nanostructures with carbon based substrates.</p> / Thesis / Doctor of Philosophy (PhD)

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