In this project, a new type of InP solar cell was investigated. The main idea is that light is converted to electrical current in p-i-n photodiodes formed in thin InP semiconductor nanowires epitaxially grown on an InP substrate. Two different types of samples were investigated. In the first sample type (series C03), the substrate was used as a common p-type electrode, whereas a short p-segment was included in all nanowires for the second sample type (B07). Current – voltage (I-V) characteristics with and without illumination were measured, as well as spectrally resolved photocurrents with and without bias. The main conclusion is that the p-i-n devices showed good rectifying behavior with an onset in photocurrent that agrees with the corresponding energy band gap of InP. An interesting observation was that in series B07 (with included p-segments) the photocurrent was determined by the band gap of hexagonal Wurtzite crystal structure, whereas series C03 (without p-segments) displayed a photocurrent dominated by the InP substrate which has a Zincblende crystal structure. We found that the overall short-circuit current was ten as large for the latter sample, stressing the importance of the substrate as a source of photocurrent.

Currently, a major challenge for solid-state spin qubit systems is achieving one-qubit operations on a timescale shorter than the spin coherence time, T2*, a goal currently two orders of magnitude away. By taking advantage of the quasi-one-dimensional structure of a nanowire and the strong spin-orbit interaction of InAs, it is estimated that π-rotations can be implemented using electric dipole spin resonance on the order of 10 ns. To this end, a procedure for the fabrication of homogeneous InAs nanowire quantum dot devices is presented herein for future investigations of solid state spin qubits as a test bed for quantum computing. Both single and double quantum dot systems are formed using local gating of InAs nanowires. Single quantum dot systems were characterized through electron transport measurements in a dilution refrigerator; in one case, the charging energy was measured to be 5.0 meV and the orbital energy was measured to be 1.5-3.5 meV. The total capacitance of the single quantum dot system was determined to be approximately 30 aF. An estimate of the quantum dot geometry resulting from confinement suggests that the quantum dot is approximately 115 nm long. The coupling energy of the double quantum dot system was measured to be approximately 4.5 meV. The electron temperature achieved with our circuitry in the dilution refrigerator is estimated to be approximately 125 mK.

The atomic arrangements and electronic structures of [0001] oriented GaN nanowires with different side surfaces have been studied by the first-principles molecular dynamics (MD) method and the conventional first-principles electronic structure calculation method. It is found that due to the dangling bond effects, the Ga-N bonds on the side surfaces of the nanowire tilt with Ga surface atoms moving inward. The radius of the nanowire is found to be reduced with respect to the wire truncated from a bulk GaN solid, which can be attributed to the surface tension effect. Due to the large ratio between the numbers of surface atoms and bulk atoms, the electronic structures of these nanowires are very different from those of bulk and films due to the large number of surface atoms or dangling-bond states, so that a bulk-like energy gap can not be clearly defined.

Nanostructures are nanometer scale structures (characteristic length less than 100 nm) such as nanowires, ultra-small junctions, etc. Since nanostructures are less stable, their characteristic volume is much smaller compared to defect sizes and their characteristic length is close to acoustical phonon wavelength. Moreover, because nanostructures include significantly fewer charge carriers than microscale structures, electronic noise in nanostructures is enhanced compared to microscale structures. Additionally, in microprocessors, due to the small gate capacitance and reduced noise margin (due to reduced supply voltage to keep the electrical field at a reasonable level), the electronic noise results in bit errors. On the other hand, the enhanced noise is useful for advanced sensing applications which are called fluctuation-enhanced sensing. In this dissertation, we first survey our earlier results about the limitation of noise posed on specific nano processors. Here, single electron logic is considered for voltage controlled logic with thermal excitations and generic shot noise is considered for current-controlled logic. Secondly, we discuss our recent results on the electronic noise in nanoscale sensors for SEnsing of Phage-Triggered Ion Cascade (SEPTIC, for instant bacterial detection) and for silicon nanowires for viral sensing. In the sensing of the phage-triggered ion cascade sensor, bacteriophage-infected bacteria release potassium ions and move randomly at the same time; therefore, electronic noise (i.e., stochastic signals) are generated. As an advanced model, the electrophoretic effect in the SEPTIC sensor is discussed. In the viral sensor, since the combination of the analyte and a specific receptor located at the surface of the silicon nanowire occurs randomly in space and time, a stochastic signal is obtained. A mathematical model for a pH silicon nanowire nanosensor is developed and the size quantization effect in the nanosensor is also discussed. The calculation results are in excellent agreement with the experimental results in the literature.

We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is 9300 cm2/Vs and carrier concentration is 7.9¡Ñ1012 cm-2 by conventional van der Pauw Hall measurement at 77K. The samples made of the AlGaN/GaN heterostructure were patterned to Hall bar geometry with a width of 20£gm by conventional photolithography. After the photolithography, the nanowire was fabricated by the process of focus ion beam (FIB), and the widths of nanowire were reduced to 900 nm, 500 nm, 300 nm, 200nm, 100 nm, 80 nm and 50 nm respectively. The SiO2 layer and Al electrode were deposed on the samples to form nanowired MOSFETs. We have studied the leakage current measurement on the AlGaN/GaN nanowired MOSFETs at 300K. On the 100 nm and 200 nm width of nanowires, we did not observe the leakage current for the gate voltage work range from -2.5 to 3.0 V and from -0.5 to 0.5 V respectively.

Conventional image sensors achieve color imaging using absorptive organic dye filters. These face considerable challenges however in the trend toward ever higher pixel densities and advanced imaging methods such as multispectral imaging and polarization-resolved imaging. In this dissertation, we investigate the optical properties of vertical silicon nanowires with the goal of image sensor applications. First, we demonstrate a multispectral imaging system that uses a novel filter that consists of vertical silicon nanowires embedded in a transparent medium. Second, we demonstrate pixels consisting of vertical silicon nanowires with integrated photodetectors. We show that their spectral sensitivities are governed by nanowire radius, and perform color imaging. In addition, we demonstrate polarization-resolving photodetectors consisting of silicon nanowires with elliptical cross sections. Finally, we discuss a dual detector device. Each pixel consists of vertical silicon nanowires (incorporating photodetectors) formed above a silicon substrate (that also incorporates a photodetector). Our method is very practical from a manufacturing standpoint because all filter functions are defined at the same time through a single lithography step. In addition, our approach is conceptually different from current filter-based methods, as absorbed light in our device is converted to photocurrent, rather than discarded. This ultimately presents the opportunity for very high photon efficiency. / Engineering and Applied Sciences

A new experimental method to characterize the mechanical properties of metallic nanowires is introduced. An accurate and fast mechanical characterization of nanowires requires simultaneous imaging and testing of nanowires. However, there exists no practical experimental procedure in the literature that provides a quantitative mechanical analysis and imaging of the nanowire specimens during mechanical testing. In this study, a customized atomic force microscope (AFM) is placed inside a scanning electron microscope (SEM) in order to locate the position of the nanowires. The tip of the atomic force microscope cantilever is utilized to bend and break the nanowires. The nanowires are prepared by electroplating of nickel ions into the nanoscale pores of the alumina membranes. Force versus bending displacement responses of these nanowires are measured experimentally and then compared against those of the finite element analysis and peridynamic simulations to extract their mechanical properties through an inverse approach.The average elastic modulus of nickel nanowires, which are extracted using finite element analysis and peridynamic simulations, varies between 220 GPa and 225 GPa. The elastic modulus of bulk nickel published in the literature is comparable to that of nickel nanowires. This observation agrees well with the previous findings on nanowires stating that the elastic modulus of nanowires with diameters over 100nm is similar to that of bulk counterparts. The average yield stress of nickel nanowires, which are extracted using finite element analysis and peridynamic simulations, is found to be between 3.6 GPa to 4.1 GPa. The average value of yield stress of nickel nanowires with 250nm diameter is significantly higher than that of bulk nickel. Higher yield stress of nickel nanowires observed in this study can be explained by the lower defect density of nickel nanowires when compared to their bulk counterparts.Deviation in the extracted mechanical properties is investigated by analyzing the major sources of uncertainty in the experimental procedure. The effects of the nanowire orientation, the loading position and the nanowire diameter on the mechanical test results are quantified using ANSYS simulations. Among all of these three sources of uncertainty investigated, the nanowire diameter has been found to have the most significant effect on the extracted mechanical properties.

Currently, a major challenge for solid-state spin qubit systems is achieving one-qubit operations on a timescale shorter than the spin coherence time, T2*, a goal currently two orders of magnitude away. By taking advantage of the quasi-one-dimensional structure of a nanowire and the strong spin-orbit interaction of InAs, it is estimated that π-rotations can be implemented using electric dipole spin resonance on the order of 10 ns. To this end, a procedure for the fabrication of homogeneous InAs nanowire quantum dot devices is presented herein for future investigations of solid state spin qubits as a test bed for quantum computing. Both single and double quantum dot systems are formed using local gating of InAs nanowires. Single quantum dot systems were characterized through electron transport measurements in a dilution refrigerator; in one case, the charging energy was measured to be 5.0 meV and the orbital energy was measured to be 1.5-3.5 meV. The total capacitance of the single quantum dot system was determined to be approximately 30 aF. An estimate of the quantum dot geometry resulting from confinement suggests that the quantum dot is approximately 115 nm long. The coupling energy of the double quantum dot system was measured to be approximately 4.5 meV. The electron temperature achieved with our circuitry in the dilution refrigerator is estimated to be approximately 125 mK.

ZnO nanowire arrays (NWAs) and Al-doped ZnO (AZO) cathodes were applied in hybrid organic / inorganic solar cells for lower-cost solar energy. Parameters for the electrodeposition of ZnO NWAs and the fabrication of NWA-free baseline devices were systematically optimized using ITO as the cathodes. High efficiencies of up to 5.4% were achieved. Incorporation of the ZnO NWAs into the baseline devices significantly reduced their efficiencies due to possible shorting in the active layer. Devices fabricated using AZO cathodes were characterized. The AZO-based devices achieved efficiencies of up to ~4.8%, showing promising results for the application of AZO as an ITO alternative. Formation of numerous large nanoplatelets was observed during the electrodeposition of ZnO NWAs on AZO cathodes. The NWAs grown on AZO cathodes were also non-uniform. Future studies were proposed to address the issues with incorporation of ZnO NWAs in hybrid solar cells and their combination with AZO cathodes.

ZnO nanowire arrays (NWAs) and Al-doped ZnO (AZO) cathodes were applied in hybrid organic / inorganic solar cells for lower-cost solar energy. Parameters for the electrodeposition of ZnO NWAs and the fabrication of NWA-free baseline devices were systematically optimized using ITO as the cathodes. High efficiencies of up to 5.4% were achieved. Incorporation of the ZnO NWAs into the baseline devices significantly reduced their efficiencies due to possible shorting in the active layer. Devices fabricated using AZO cathodes were characterized. The AZO-based devices achieved efficiencies of up to ~4.8%, showing promising results for the application of AZO as an ITO alternative. Formation of numerous large nanoplatelets was observed during the electrodeposition of ZnO NWAs on AZO cathodes. The NWAs grown on AZO cathodes were also non-uniform. Future studies were proposed to address the issues with incorporation of ZnO NWAs in hybrid solar cells and their combination with AZO cathodes.