Photonic crystals (PhCs) are structures periodic in thedielectric constant. They exhibit a photonic bandgap, i.e., arange of wavelengths for which light propagation is forbidden.Engineering of defects in the PhC lattice offers new ways toconfine and guide light. PhCs have been manufactured usingsemiconductors and other material technologies. This thesisfocuses on two-dimensional PhCs etched in InP-based materials.Only recently, such structures were identified as promisingcandidates for the realization of novel and advanced functionsfor optical communication applications. The primary focus was on fabrication and characterization ofPhC structures in the InP/GaInAsP/InP material system. Thedemands on fabrication are very high: holes as small as100-300nm in diameter have to be etched at least as deep as 2µm. Thus, different etch processes had to be explored andspecifically developed for InP. We have implemented an etchingprocess based on Ar/Cl2chemically assisted ion beam etching (CAIBE), thatrepresents the state of the art PhC etching in InP. Different building blocks were manufactured using thisprocess. A transmission loss of 10dB/mm for a PhC waveguide, areflection of 96.5% for a 4-row mirror and a record qualityfactor of 310 for a 1D cavity were achieved for this materialsystem. With an etch depth of 4.5 µm, optical loss wasfound to be close to the intrinsic limit. PhC-based opticalfilters were demonstrated using (a) a Fabry-Pérot cavityinserted in a PhC waveguide and (b) a contra-directionalcoupler. Lag effect in CAIBE was utilized positively to realizehigh quality PhC taper sections. Using a PhC taper, a couplingefficiency of 70% was demonstrated from a standard ridgewaveguide to a single line defect PhC waveguide. During the course of this work, InP membrane technology wasdeveloped and a Fabry-Pérot cavity with a quality factorof 3200 was demonstrated. Keywords:photonic crystals, photonic bandgap materials,indium phosphide, dry etching, chemically assisted ion beametching, reactive ion etching, electron beam lithography,photonic integrated circuits, optical waveguides, resonantcavities, optical filtering, finite difference time domain,plane wave expansion.

This thesis treats interaction between electromagnetic waves and localized plasma oscillations. Two specific physical systems are considered, namely artificially excited magnetic field-aligned irregularities (striations) and naturally excited lower hybrid solitary structures (LHSS). Striations are mainly density depletions of a few percent that are observed when a powerful electromagnetic wave, a pump wave, is launched into the ionosphere. The striations are formed by upper hybrid (UH) oscillations that are localized in the depletion where they are generated by the linear conversion of the pump field on the density gradients. However, the localization is not complete as the UH oscillation can convert to a propagating electromagnetic Z mode wave. This process, termed Z mode leakage, causes damping of the localized UH oscillation. The Z mode leakage is investigated and the theory predicts non-Lorentzian skewed shapes of the resonances for the emitted Z mode radiation. Further, the interaction between individual striations facilitated by the Z mode leakage is investigated. The LHSS are observed by spacecraft in the ionosphere and magnetosphere as localized waves in the lower hybrid (LH) frequency range that coincides with density cavities. The localized waves are immersed in non-localized wave activity. The excitation of localized waves with frequencies below LH frequency is modelled by scattering of electromagnetic magnetosonic (MS) waves off a preexisting density cavity. It is shown analytically that an incident MS wave with frequency less than the minimum LH frequency inside the cavity is focused to localized waves with left-handed rotating wave front. In addition, the theory is shown to be consistent with observations by the Freja satellite. For frequencies between the minimum LH frequency inside the cavity and the ambient LH frequency, the MS wave is instead mode converted and excites pressure driven LH oscillations. This process is studied in a simplified geometry.

Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic bandgap, i.e., a range of wavelength for which light propagation is forbidden. The special band structure related dispersion properties offer a realm of novel functionalities and interesting physical phenomena. PhCs have been manufactured using semiconductors and other material technologies. However, InP-based materials are the main choice for active devices at optical communication wavelengths. This thesis focuses on two-dimensional PhCs in the InP/GaInAsP/InP material system and addresses their fabrication technology and their physical properties covering both material issues and light propagation aspects. Ar/Cl2 chemically assisted ion beam etching was used to etch the photonic crystals. The etching characteristics including feature size dependent etching phenomena were experimentally determined and the underlying etching mechanisms are explained. For the etched PhC holes, aspect ratios around 20 were achieved, with a maximum etch depth of 5 microns for a hole diameter of 300 nm. Optical losses in photonic crystal devices were addressed both in terms of vertical confinement and hole shape and depth. The work also demonstrated that dry etching has a major impact on the properties of the photonic crystal material. The surface Fermi level at the etched hole sidewalls was found to be pinned at 0.12 eV below the conduction band minimum. This is shown to have important consequences on carrier transport. It is also found that, for an InGaAsP quantum well, the surface recombination velocity increases (non-linearly) by more than one order of magnitude as the etch duration is increased, providing evidence for accumulation of sidewall damage. A model based on sputtering theory is developed to qualitatively explain the development of damage. The physics of dispersive phenomena in PhC structures is investigated experimentally and theoretically. Negative refraction was experimentally demonstrated at optical wavelengths, and applied for light focusing. Fourier optics was used to experimentally explore the issue of coupling to Bloch modes inside the PhC slab and to experimentally determine the curvature of the band structure. Finally, dispersive phenomena were used in coupled-cavity waveguides to achieve a slow light regime with a group index of more than 180 and a group velocity dispersion up to 10^7 times that of a conventional fiber. / QC 20100712

<p>Photonic crystals (PhCs) are structures periodic in thedielectric constant. They exhibit a photonic bandgap, i.e., arange of wavelengths for which light propagation is forbidden.Engineering of defects in the PhC lattice offers new ways toconfine and guide light. PhCs have been manufactured usingsemiconductors and other material technologies. This thesisfocuses on two-dimensional PhCs etched in InP-based materials.Only recently, such structures were identified as promisingcandidates for the realization of novel and advanced functionsfor optical communication applications.</p><p>The primary focus was on fabrication and characterization ofPhC structures in the InP/GaInAsP/InP material system. Thedemands on fabrication are very high: holes as small as100-300nm in diameter have to be etched at least as deep as 2µm. Thus, different etch processes had to be explored andspecifically developed for InP. We have implemented an etchingprocess based on Ar/Cl₂chemically assisted ion beam etching (CAIBE), thatrepresents the state of the art PhC etching in InP.</p><p>Different building blocks were manufactured using thisprocess. A transmission loss of 10dB/mm for a PhC waveguide, areflection of 96.5% for a 4-row mirror and a record qualityfactor of 310 for a 1D cavity were achieved for this materialsystem. With an etch depth of 4.5 µm, optical loss wasfound to be close to the intrinsic limit. PhC-based opticalfilters were demonstrated using (a) a Fabry-Pérot cavityinserted in a PhC waveguide and (b) a contra-directionalcoupler. Lag effect in CAIBE was utilized positively to realizehigh quality PhC taper sections. Using a PhC taper, a couplingefficiency of 70% was demonstrated from a standard ridgewaveguide to a single line defect PhC waveguide.</p><p>During the course of this work, InP membrane technology wasdeveloped and a Fabry-Pérot cavity with a quality factorof 3200 was demonstrated.</p><p><b>Keywords:</b>photonic crystals, photonic bandgap materials,indium phosphide, dry etching, chemically assisted ion beametching, reactive ion etching, electron beam lithography,photonic integrated circuits, optical waveguides, resonantcavities, optical filtering, finite difference time domain,plane wave expansion.</p>

Στην παρούσα Διδακτορική Διατριβή διερευνώνται αριθμητικά δομές οι οποίες μπορούν να λειτουργήσουν ως φωνονικά ή φωτονικά υλικά. Βασικό χαρακτηριστικό των φωτονικών και των φωνονικών υλικών είναι η ύπαρξη χασμάτων συχνοτήτων στη διάδοση των ηλεκτρομαγνητικών και των ελαστικών κυμάτων αντίστοιχα διαμέσου των δομών αυτών. Αρχικά διερευνήθηκαν αριθμητικά δύο δομές οι οποίες έχουν ήδη χρησιμοποιηθεί ως φωτονικά υλικά και για τις οι οποίες εξετάστηκε κατά πόσο είναι εφικτή λειτουργία τους ως φωνονικά υλικά. Η πρώτη δομή είναι η πολύ γνωστή δομή κατά στρώσεις και η δεύτερη ένας ηχητικός κυματοδηγός «λωρίδα» (slot waveguide) επάνω στον οποίο δομείται ένας φωνονικός κρύσταλλος. Για τους αριθμητικούς υπολογισμούς χρησιμοποιήθηκε η μέθοδος των πεπερασμένων διαφορών στο πεδίο του χρόνου και υπολογίστηκαν το Φάσμα Μετάδοσης καθώς και το διάγραμμα Διασποράς. Στην μελέτη αυτή περιελήφθησαν αρκετά διαφορετικά υλικά όπως το πυρίτιο, η εποξειδική ρητίνη και το βολφράμιο. Διερευνήθηκε επίσης η επίδραση όλων των γεωμετρικών παραμέτρων των δομών. Τα αποτελέσματα έδειξαν ότι οι δομές αυτές φαίνεται να έχουν πολύ ελπιδοφόρα χαρακτηριστικά ως φωνονικοί κρύσταλλοι. Υπό ορισμένες προϋποθέσεις μάλιστα μπορεί να προκύψει πλήρες τρισδιάστατο χάσμα. Λαμβάνοντας υπόψη ότι η συγκεκριμένες δομές είναι ήδη γνωστές για τη χρήση τους ως φωτονικοί κρύσταλλοι, η πεποίθηση για τη χρήση τους ταυτόχρονα ως φωτονικοί και φωνονικοί κρύσταλλοι καθίσταται βάσιμη. Στην συνέχεια, χρησιμοποιώντας ξανά τη μέθοδο των πεπερασμένων διαφορών στο πεδίο του χρόνου, μελετήθηκαν ενδεχόμενες εφαρμογές που θα μπορούσαν οι δομές αυτές να έχουν. Πιο συγκεκριμένα διερευνήθηκε αρχικά η ενδεχόμενη χρήση των φωνονικών κρυστάλλων ως αισθητήρες. Οι Ευαισθησίες αυτών των δομών υπολογίστηκαν από τις αλλαγές στα όρια των αντίστοιχων φωνονικών χασμάτων όταν ένα λεπτό φιλμ νερού (για την περίπτωση του αισθητήρα υγρασίας) προστεθεί στη δομή ή όταν οι δομές εμβαπτιστούν σε κάποιο υγρό (αισθητήρες υγρών). Μελετήθηκε επίσης για πρώτη φορά συγκεκριμένη ελαστοδυναμική συμπεριφορά της τρισδιάστατης δομής κατά στρώσεις. Τα αποτελέσματα που προέκυψαν παρουσιάζουν μια υψηλή τιμή στον λόγο της διαμήκους προς την εγκάρσια ταχύτητα του ήχου και μια ιδανική συμπεριφορά pentamode σε ένα εύρος συχνοτήτων. Τα αποτελέσματα δείχνουν σαφώς ότι η δομή κατά στρώσεις μπορεί να αποτελέσει και ένα πολύ σημαντικό ελαστοδυναμικό μεταϋλικό. Στην επόμενη ενότητα της Διδακτορικής διατριβής χρησιμοποιώντας την θεωρία συναρτησιακών πυκνότητας μελετήθηκε η φωνονική πυκνότητα καταστάσεων για υλικά τύπου γραφενίου όπως το silicene (σιλικένιο) και το germanene (γερμανένιο). Εξετάστηκαν οι περιπτώσεις στις οποίες άτομα πυριτίου ή γερμανίου στις δομές τύπου γραφενίου αντικαταστάθηκαν από άλλα άτομα της Ομάδας IV του Περιοδικού Πίνακα και διερευνήθηκε κατά πόσο οι προκύπτουσες δομές μπορούν να λειτουργήσουν ως φωνονικοί κρύσταλλοι με την εμφάνιση φωνονικών χασμάτων στην φωνονική πυκνότητα καταστάσεών τους. Εξετάστηκαν επίσης νανοσωλήνες άνθρακα και κυρίως οι ομοιότητές τους με τα υλικά τύπου γραφενίου. Βρέθηκε πως, για τις περιπτώσεις όπου η διάμετρος των νανοσωλήνων ξεπερνά το 1nm, παρουσιάζονται αρκετές ομοιότητες με τα υλικά τύπου γραφενίου. Στην τελευταία ενότητα της διατριβής διερευνώνται δομές στις οποίες μπορεί να παρατηρηθεί εντοπισμός του φωτός σε περιοχές κλίμακας νανομέτρων. Ένα σύστημα αποτελούμενο από δύο δίσκους πυριτίου με διάκενο να τους χωρίζει μερικά δέκατα του νανομέτρου μελετήθηκε πρώτο. Ο κανονικοποιημένος, αδιάστατος ενεργός όγκος καταστάσεων, V_eff, υπολογίστηκε για τους δύο χαμηλότερους συντονισμούς. Ο ενεργός όγκος καταστάσεων μειώνεται σημαντικά καθώς το χάσμα μεταξύ των δίσκων μεγαλώνει. Μελετάται επίσης μια δομή αποτελούμενη από έναν κυκλικό κυματοδηγό σχισμή ο οποίος σχηματίζεται μέσα σε έναν κυκλικό συντονιστή πυριτίου. Όπως προκύπτει από τα αριθμητικά αποτελέσματα η προτεινόμενη δομή μπορεί να εμφανίσει συντονισμούς με υψηλές τιμές του παράγοντα Q, αυξάνοντας έτσι την πεποίθηση πως η προτεινόμενη δομή μπορεί να αποτελέσει βάση για εφαρμογές σε οπτικές τηλεπικοινωνίες. / This thesis explores numerically structures that can act as phononic or photonic materials. A key feature of photonic and phononic materials is the existence of frequency gaps in propagation of electromagnetic waves and elastic waves respectively. Initially the functionality of two structures as phononic materials is numerically examined. Those structures have already been used as photonic materials. The first structure is the well-known layer-by-layer structure and the second is an acoustic strip waveguide onto which is considered one phononic crystal. For numerical calculations the Finite Difference Time Domain method was used. The transmission spectra and the band structure were calculated. Several different materials such as silicon, epoxy and tungsten were included in this study. It was also investigated the effect of all the geometric parameters of the structures. The results showed that these structures appear to have very promising features as phononic crystals. Under certain conditions it may even exists a full three-dimensional phononic band gap. Considering that those structures are already known for their use as photonic crystals, the belief for their use as both photonic crystals and phononic crystals becomes valid. Then, again using the Finite Difference Time Domain method, potential applications that these structures could have were also examined. Initially it was investigated the potential use of phononic crystals as sensors. The sensitivities of these structures were calculated from the changes in the boundaries of the respective phononic band gaps when a thin film of water (in the case of the humidity sensor) was added to the structure or when those structures immersed in a liquid (liquid sensors). Also studied for the first time the three-dimensional layer-by-layer structure for specific elastodynamic behavior. The results show a high value of the ratio of the longitudinal to the transverse speed of sound and an ideal pentamode behavior for a specific frequency range. The results clearly show that the layer-by-layer structure could be a very important elastodynamic metamaterial. In the next section of this thesis, the phonon density of states of graphene-like materials such as silicene and germanene is examined using density functional theory. Cases were silicon or germanium atoms on graphene-like structures are replaced by other group IV atoms and how these new structures could perform as nanoscale phononic crystals, creating phononic band gaps in their phonon density of states, are numerically investigated. Nanotubes were also examined and their similarities, especially for cases with diameters above 1nm, with the graphene-like materials were found. In the final section of this thesis structures which could confine light in nanometer areas were numerically examined. A system consisting of two silicon disks with in plane separation of a few tens of nanometers has been studied first. The normalized unitless effective mode volume, Veff, has been calculated for the two lowest whispering gallery modes resonances. The effective mode volume is reduced significantly as the gap between the disks decreases. It is also numerically examined a structure consisting of a circular slot waveguide which is formed into a silicon disk resonator. It is shown that the proposed structure could have high Q resonances thus raising the belief that it is a very promising candidate for optical interconnects applications.

Made available in DSpace on 2014-12-17T14:06:59Z (GMT). No. of bitstreams: 1 EdalmyOA.pdf: 3019202 bytes, checksum: 652b61310237ca737b3decb6945b78be (MD5) Previous issue date: 2008-06-27 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / The system built to characterize electrodes and, consequently, deposited fine films are constituted by a hollow cathode that works to discharges and low pressures (approximately 10-3 to 5 mbar), a source DC (0 to 1200 V), a cylindrical camera of closed borossilicato for flanges of stainless steel with an association of vacuum bombs mechanical and spread. In the upper flange it is connected the system of hollow cathode, which possesses an entrance of gas and two entrances for its refrigeration, the same is electrically isolated of the rest of the equipment and it is polarized negatively. In front of the system of hollow cathode there is a movable sample in stainless steel with possibility of moving in the horizontal and vertical. In the vertical, the sample can vary its distance between 0 and 70 mm and, in the horizontal, can leave completely from the front of the hollow cathode. The sample and also the cathode hollow are equipped with cromel-alumel termopares with simultaneous reading of the temperatures during the time of treatment. In this work copper electrodes, bronze, titanium, iron, stainless steel, powder of titanium, powder of titanium and sil?cio, glass and ceramic were used. The electrodes were investigated relating their geometry change and behavior of the plasma of the cavity of hollow cathode and channel of the gas. As the cavity of hollow cathode, the analyzed aspects were the diameter and depth. With the channel of the gas, we verified the diameter. In the two situations, we investigated parameters as flow of the gas, pressure, current and applied tension in the electrode, temperature, loss of mass of the electrode with relationship at the time of use. The flow of gas investigated in the electrodes it was fastened in a work strip from 15 to 6 sccm, the constant pressure of work was among 2.7 to 8 x 10-2 mbar. The applied current was among a strip of work from 0,8 to 0,4 A, and their respective tensions were in a strip from 400 to 220 V. Fixing the value of the current, it was possible to lift the curve of the behavior of the tension with the time of use. That curves esteem in that time of use of the electrode to its efficiency is maximum. The temperatures of the electrodes were in the dependence of that curves showing a maximum temperature when the tension was maximum, yet the measured temperatures in the samples showed to be sensitive the variation of the temperature in the electrodes. An accompaniment of the loss of mass of the electrode relating to its time of use showed that the electrodes that appeared the spherical cavities lost more mass in comparison with the electrodes in that didn't appear. That phenomenon is only seen for pressures of 10-2 mbar, in these conditions a plasma column is formed inside of the channel of the gas and in certain points it is concentrated in form of spheres. Those spherical cavities develop inside of the channel of the gas spreading during the whole extension of the channel of the gas. The used electrodes were cut after they could not be more used, however among those electrodes, films that were deposited in alternate times and the electrodes that were used to deposit films in same times, those films were deposited in the glass substrata, alumina, stainless steel 420, stainless steel 316, sil?cio and steel M2. As the eletros used to deposit films in alternate time as the ones that they were used to deposit in same times, the behavior of the thickness of the film obeyed the curve of the tension with relationship the time of use of the electrode, that is, when the tension was maximum, the thickness of the film was also maximum and when the tension was minimum, the thickness was minimum and in the case where the value of the tension was constant, the thickness of the film tends to be constant. The fine films that were produced they had applications with nano stick, bio-compatibility, cellular growth, inhibition of bacterias, cut tool, metallic leagues, brasagem, pineapple fiber and ornamental. In those films it was investigated the thickness, the adherence and the uniformity characterized by sweeping electronic microscopy. Another technique developed to assist the production and characterization of the films produced in that work was the caloteste. It uses a sphere and abrasive to mark the sample with a cap impression, with that cap form it is possible to calculate the thickness of the film. Through the time of life of the cathode, it was possible to evaluate the rate of waste of its material for the different work conditions. Values of waste rate up to 3,2 x 10-6 g/s were verified. For a distance of the substratum of 11 mm, the deposited film was limited to a circular area of 22 mm diameter mm for high pressures and a circular area of 75 mm for pressure strip. The obtained films presented thickness around 2,1 ?m, showing that the discharge of arch of hollow cathode in argon obeys a curve characteristic of the tension with the time of life of the eletrodo. The deposition rate obtained in this system it is of approximately 0,18 ?m/min / O sistema constru?do para caracterizar eletrodos e, conseq?entemente, filmes finos depositados ? constitu?do por um c?todo oco que trabalha a altas e baixas press?es (aproximadamente 10-3 a 5 mbar), uma fonte DC (0 a 1200 V), uma c?mara cil?ndrica de borossilicato fechada por flanges de a?o inox com uma associa??o de bombas de v?cuo mec?nica e difusora. No flange superior est? conectado o sistema de c?todo oco, o qual possui uma entrada de g?s e duas entradas para a sua refrigera??o, o mesmo est? eletricamente isolado do resto do equipamento e ? polarizado negativamente. Em frente ao sistema de c?todo oco encontra-se um porta amostra em a?o inox m?vel com possibilidade de se mover na horizontal e vertical. Na vertical, o porta amostra pode variar a sua dist?ncia entre 0 e 70 mm e, na horizontal, pode sair completamente da frente do c?todo oco. Tanto o porta amostra como o c?todo oco s?o equipados com termopares de cromel-alumel com leitura simult?nea das temperaturas durante o tempo de tratamento. Neste trabalho foram utilizados eletrodos de cobre, bronze, tit?nio, ferro, a?o inox, p? de tit?nio, p? de tit?nio e sil?cio, vidro e cer?mica. Os eletrodos foram investigados com rela??o a sua mudan?a de geometria e comportamento do plasma dentro da cavidade de c?todo oco e canal do g?s. Quanto a cavidade de c?todo oco, os aspectos analisados foram o di?metro e sua profundidade. Com o canal do g?s, verificamos o di?metro. Nas duas situa??es, investigamos par?metros como fluxo do g?s, press?o, corrente e tens?o aplicada no eletrodo, temperatura, perda de massa do eletrodo com rela??o ao tempo de uso. O fluxo de g?s investigado nos eletrodos foi fixado em uma faixa de trabalho de 15 a 6 sccm, a press?o constante de trabalho ficou entre 2.7 a 8 x 10-2 mbar. A corrente aplicada foi entre uma faixa de trabalho de 0,8 a 0,4 A, e as suas respectivas tens?es ficaram em uma faixa de 400 a 220 V. Fixando o valor da corrente, foi poss?vel levantar a curva do comportamento da tens?o com o tempo de uso. Essa curva estima em que tempo de uso do eletrodo a sua efici?ncia ? m?xima. As temperaturas dos eletrodos ficaram na depend?ncia dessa curva mostrando uma temperatura m?xima quando a tens?o era m?xima, j? as temperaturas medidas nas amostras mostraram ser sens?veis a varia??o da temperatura no eletrodo. Um acompanhamento da perda de massa do eletrodo com rela??o ao seu tempo de uso mostrou que os eletrodos que apareceram as cavidades esf?ricas perderam mais massa em compara??o aos eletrodos em que essas n?o apareceram. Esse fen?meno s? ? visto para press?es de 10-2 mbar, nestas condi??es uma coluna de plasma se forma dentro do canal do g?s e em determinados pontos fica concentrado em forma de esferas. Essas cavidades esf?ricas evoluem dentro do canal do g?s se propagando durante toda a extens?o do canal do g?s. Os eletros utilizados foram cortados depois que n?o puderam ser mais usados, no entanto entre esses eletrodos filmes que foram depositados em tempos alternados e os eletrodos que foram utilizados para depositar filmes em tempos iguais, esses filmes foram depositados nos substratos de vidro, alumina, a?o inox 420, a?o inox 316, sil?cio e a?o M2. Tanto os eletros usados para depositar filmes em tempo alternado como os que foram usados para depositar em tempos iguais, o comportamento da espessura do filme obedeceu a curva da tens?o com rela??o ao tempo de uso do eletrodo, isto ?, quando a tens?o era m?xima, a espessura do filme tamb?m foi m?xima e quando a tens?o era m?nima, a espessura foi m?nima e no caso onde o valor da tens?o foi constante, a espessura do filme tende a ficar constante. Os filmes finos que foram produzidos tiveram aplica??es com nano bast?o, bio-compatibilidade, crescimento celular, inibi??o de bact?rias, ferramenta de corte, ligas met?licas, brasagem, fibra de abacaxi e decorativos. Nesses filmes foi investigada a espessura, a ader?ncia e a uniformidade caracterizadas por microscopia eletr?nica de varredura. Outra t?cnica desenvolvida para atender a produ??o e caracteriza??o dos filmes produzidos nesse trabalho foi o caloteste. Ele se utiliza de uma esfera e abrasivo para marcar a amostra com uma impress?o de calota, com essa forma de calota ? poss?vel calcular a espessura do filme. Atrav?s do tempo de vida do c?todo, foi poss?vel avaliar a taxa de desgaste do seu material para as diferentes condi??es de trabalho. Valores de taxa de desgaste at? 3,2 x 10-6 g/s foram verificados. Para uma dist?ncia do substrato de 11 mm, o filme depositado ficou limitado a uma ?rea circular de 22 mm de di?metro para press?es altas e uma ?rea circular de 75 mm para faixa de press?o. Os filmes obtidos apresentaram espessura em torno de 2,1 ?m, mostrando que a descarga de arco de c?todo oco em arg?nio obedece a uma curva caracter?stica da tens?o com o tempo de vida do eletrodo. A taxa de deposi??o obtida neste sistema ? de aproximadamente 0,18 ?m/min

Submitted by Murilo Oliveira (murilo.oliveira@df.ufscar.br) on 2018-05-28T14:03:10Z No. of bitstreams: 1 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) / Rejected by Ronildo Prado (ri.bco@ufscar.br), reason: Oi Murilo, Faltou enviar a Carta comprovante assinada pelo orientador. Solicite o modelo em sua Secretaria de Pós-graduação, preencha e colete a assinatura com o orientador e acesse novamente o sistema para fazer o Upload. Fico no aguardo para finalizarmos o processo. Abraços Ronildo on 2018-06-04T17:58:14Z (GMT) / Submitted by Murilo Oliveira (murilo.oliveira@df.ufscar.br) on 2018-06-04T18:39:43Z No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) / Approved for entry into archive by Ronildo Prado (ri.bco@ufscar.br) on 2018-06-06T17:29:19Z (GMT) No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) / Approved for entry into archive by Ronildo Prado (ri.bco@ufscar.br) on 2018-06-06T17:32:09Z (GMT) No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) / Made available in DSpace on 2018-06-06T17:32:18Z (GMT). No. of bitstreams: 2 MuriloOliveira_dissertacao.pdf: 3213764 bytes, checksum: eaf61f839f12dceed4b235ef7970e674 (MD5) IMG_20180604_0001.pdf: 522878 bytes, checksum: b7fa478fbcdf1b45955f8a02f8403af0 (MD5) Previous issue date: 2018-02-28 / Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) / The aim of this work is to study the electromagnetically induced transparency (EIT) and the coherent population trapping (CPT) phenomena in three-level systems, such as atoms and quantum dot molecules (QDM). The present work can be basically divided into two parts. The first one focus on comparing and explaining the differences between the optical reponses of systems composed by atoms and QDM and on proposing a possible application in cavity linewidth narrowing. In the second part, we turn our attention to the study of controlable optical bistability in three-level systems in the regime of CPT, bringing new perspectives to the study of these bistable systems and some practical applications as well. / O presente trabalho de mestrado tem como objetivo estudar o fenômeno da transparência eletromagneticamente induzida (EIT) e do aprisionamento coerente de populações (CPT) em sistemas de três níveis, como átomos e moléculas de ponto quântico (QDM). Essa dissertação pode ser dividida basicamente em duas partes. A primeira se encarrega de comparar e explicar a origem das diferenças observadas na resposta óptica de sistemas compostos por átomos e sistemas compostos por QDM, bem como propor uma possível aplicação para o sistema de QDM no estreitamento da largura de linha de cavidades. Já a segunda parte consiste de um estudo da biestabilidade óptica controlável em sistemas de 3 de níveis no regime de CPT, trazendo novas perspectivas de estudo desses sistemas biestáveis e aplicações como sensores de pequenas flutuações de frequência ou de amplitudes de campos eletromagnéticos. / CNPq: 131392/2016-6

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Submitted by Pedro Silva Filho (pfsilva@ipen.br) on 2017-11-22T17:35:38Z No. of bitstreams: 0 / Made available in DSpace on 2017-11-22T17:35:38Z (GMT). No. of bitstreams: 0 / O projeto de doutorado tem como objetivo estudo e montagem de um sistema laser que gere feixe laser de comprimento de onda sintonizável continuamente, com intervalo espectral na região infravermelho (IV) próximo e médio. O trabalho foi dividido em três partes: (i) laser de Nd:YAG @1064nm, (ii) aplicação deste sobre uma cavidade ressonante OPO e (iii) simulação de cavidades laser em anel. O laser de Nd:YAG foi montado e aprimorado a partir de outro laser desenvolvido anteriormente, o qual foi transformado em fonte polarizada pela inserção de um elemento óptico no seu interior. Em comparação com o laser não polarizado, ele apresentou potência de saída com valores relativamente altos, com um máximo de 30W, e melhora do fator de qualidade do feixe de M2<1,3 mais próximo do valor ideal igual a 1 e assim próximo do modo TEM00, adequado para aplicações de transferência de energia. A aplicação do laser Nd:YAG polarizado sobre uma cavidade OPO linear (meio ativo: cristal de Niobato de Lítio dopado 5%MgO:LiNbO3 com alternância de polarização, conhecido pela sigla PPLN) foi bem sucedida, por ter sido observado seu funcionamento pela geração em seu meio ativo dos feixes (&lambda;S, &lambda;C) sinal e complementar sintonizados continuamente, mostrando que valores de potência e fator de qualidade foram adequados e suficientes para ser testado em um OPO. Foi mensurada na saída potencia de 1W para o feixe complementar, onde a eficiência de inclinação da curva mostrou valores de 20,8% e 23,4% para bombeio pulsado (temperaturas do cristal TC=100°C/150°C), e o valor de 11,1% (TC=150°C) para bombeio contínuo. A aplicação da técnica knife-edge no feixe complementar (TC=150°C/rede periódica do cristal &Lambda;0=31,59m/ &lambda;C=2470nm) resultou em fator de qualidade do feixe de M2=5,75(165). Foi realizada simulação numérica, visando estudo e planejamento de duas cavidades em anel simétricas, com sintonização contínua dos feixes de interesse na saída. A primeira contém um cristal PPLN como meio ativo, onde ocorre Oscilação Paramétrica, gerando feixe na região espectral do IV médio. A segunda cavidade possui dois cristais, que são PPLN e Triborato de Lítio (LiB3O5 conhecido pela sigla LBO), onde ocorrem na ordem Oscilação Paramétrica e Geração de Segundo Harmônico, gerando feixe na região espectral entre visível e IV próximo. Foram obtidos dois conjuntos de valores de dimensões para as cavidades, usando base teórica e condições de contorno apropriadas ao realizar os cálculos necessários, fixadas as informações sobre os respectivos componentes ópticos, onde o feixe de bombeio @1064nm focalizado no centro do cristal PPLN possui valor de cintura de feixe pouco maior que 50 &mu;m. O laser de Nd:YAG @1064nm polarizado desenvolvido possui montagem simples e custo baixo de seus componentes, reduzindo o custo do sistema laser final onde foi aplicado, comparado com outros sistemas laser sintonizáveis. Deseja-se estudar o desenvolvimento destes para um modelo de frequência única, usando-o como fonte de bombeio para geração de feixes com largura de linha estreita, visando aplicação em espectroscopia. / Tese (Doutorado em Tecnologia Nuclear) / IPEN/T / Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP

La réduction du cout de construction et d’exploitation des futurs accélérateurs d particules, a grande et petite échelles, dépend du développement de nouveaux matériaux pour les surfaces actives des structures supraconductrices en radiofréquence (SRF). Les propriétés SRF sont essentiellement un phénomène de surface vu que la profondeur de pénétration (profondeur de pénétration de London, λ) des micro-ondes (RF) est typiquement de l’ordre de 20 à 400 nm en fonction du matériau. Lorsque les procédés de préparation de surface sont optimises, la limite fondamentale du champ RF que les surfaces SRF peuvent supporter est le champ RF maximum, Hc₁, au-delà duquel le flux magnétique commence à pénétrer la surface du supraconducteur. Le matériau le plus utilise pour des applications SRF est le niobium (Nb) massif, avec un champ Hc₁ de l’ordre de 170 mT, qui permet d’atteindre un champ accélérateur de moins de 50 MV/m. Les meilleures perspectives d’amélioration des performances des cavités SRF sont liées à des matériaux et méthodes de production produisant la surface SRF critique de façon contrôlée. Dans cette optique, deux avenues sont explorées pour utiliser des couches minces pour augmenter les performances des structures SRF au-delà du Nb massif, en monocouche ou en structures multicouches Supraconducteur-Isolant-Supraconducteur (SIS) : La première approche est d’utiliser une couche de Nb déposée sur du cuivre (Nb/Cu) à la place du Nb massif. La technologie Nb/Cu a démontré, au cours des années, être une alternative viable pour les cavités SRF. Toutefois, les techniques de dépôt communément utilisées, principalement la pulvérisation magnétron, n’ont jusqu’à présent pas permis de produire des surfaces SRF adaptées aux performances requises. Le récent développement de techniques de dépôt par condensation énergétiques, produisant des flux d’ions énergétiques de façon contrôlée (telles que des sources d’ions ECR sous ultravide) ouvrent la voie au développement de films SRF de grand qualité. La corrélation entre les conditions de croissance, l’énergie des ions incidents, la structure et les performances RF des films produits est étudiée. Des films Nb avec des propriétés proches du Nb massif sont ainsi produits. La deuxième approche est basée sur un concept qui propose qu’une structure multicouche SIS déposée sur une surface de Nb peut atteindre des performances supérieures à celles du Nb massif. Bien que les matériaux supraconducteurs à haute Tc aient un champ Hc₁ inférieur à celui du Nb, des couches minces de tels matériaux d’une épaisseur (d) inférieure à la profondeur de pénétration voient une augmentation de leur champ parallèle Hc₁ résultant au retardement de la pénétration du flux magnétique. Cette surcouche peut ainsi permettre l’écrantage magnétique de la surface de Nb qui est donc maintenue dans l’état de Meissner à des champs RF bien plus importants que pour le Nb massif. La croissance et performance de structures multicouches SIS basées sur des films de NbTiN, pour le supraconducteur, et de l’AlN, pour le diélectrique, sont étudiées. Les résultats de cette étude montrent la faisabilité de cette approche et le potentiel qui en découle pour l’amélioration des performances SRF au-delà du Nb massif. / The minimization of cost and energy consumption of future particle accelerators, both large and small, depends upon the development of new materials for the active surfaces of superconducting RF (SRF) accelerating structures. SRF properties are inherently a surface phenomenon as the RF only penetrates the London penetration depth λ, typically between 20 and 400 nm depending on the material. When other technological processes are optimized, the fundamental limit to the maximum supportable RF field amplitude is understood to be the field at which the magnetic flux first penetrates into the surface, Hc₁. Niobium, the material most exploited for SRF accelerator applications, has Hc₁~170 mT, which yields a maximum accelerating gradient of less than 50 MV/m. The greatest potential for dramatic new performance capabilities lies with methods and materials which deliberately produce the sub-micron-thick critical surface layer in a controlled way. In this context, two avenues are pursued for the use of SRF thin films as single layer superconductor or multilayer Superconductor-Insulator-Superconductor structures: Niobium on copper (Nb/Cu) technology for superconducting cavities has proven over the years to be a viable alternative to bulk niobium. However the deposition techniques used for cavities, mainly magnetron sputtering, have not yielded, so far, SRF surfaces suitable for high field performance. High quality films can be grown using methods of energetic condensation, such as Electron Cyclotron Resonance (ECR) Nb ion source in UHV which produce higher flux of ions with controllable incident angle and kinetic energy. The relationship between growth conditions, film microstructure and RF performance is studied. Nb films with unprecedented “bulk-like” properties are produced. The second approach is based on the proposition that a Superconductor/Insulator/Superconductor (S-I-S) multilayer film structure deposited on an Nb surface can achieve performance in excess of that of bulk Nb. Although, many higher-Tc superconducting compounds have Hc₁ lower than niobium, thin films of such compounds with a thickness (d) less than the penetration depth can exhibit an increase of the parallel Hc₁ thus delaying vortex entry. This overlayer provides magnetic screening of the underlying Nb which can then remain in the Meissner state at fields much higher than in bulk Nb. A proof of concept is developed based on NbTiN and AlN thin films. The growth of NbTiN and AlN films is studied and NbTiN-based multilayer structures deposited on Nb surfaces are characterized. The results from this work provide insight for the pursuit of major reductions in both capital and operating costs associated with future particle accelerators across the spectrum from low footprint compact machines to energy frontier facilities.