For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental problems and limitations arise with the down-scaling of transistors and thus new innovations needed to be discovered in order to further improve device performance without compromising power consumption and size. Thus, a lot of studies have focused on the development of new CMOS compatible architectures as well as the discovery of new high mobility channel materials that will allow further miniaturization of CMOS transistors and improvement of device performance. Pushing the limits even further, flexible and foldable electronics seem to be the new attractive topic. By being able to make our devices flexible through a CMOS compatible process, one will be able to integrate hundreds of billions of more transistors in a small volumetric space, allowing to increase the performance and speed of our electronics all together with making things thinner, lighter, smaller and even interactive with the human skin. Thus, in this thesis, we introduce for the first time a cost-effective CMOS compatible approach to make high-k/metal gate devices on flexible Germanium (Ge) and Silicon-Germanium (SiGe) platforms. In the first part, we will look at the various approaches in the literature that has been developed to get flexible platforms, as well as we will give a brief overview about epitaxial growth of Si1-xGex films. We will also examine the electrical properties of the Si1-xGex alloys up to Ge (x=1) and discuss how strain affects the band structure diagram, and thus the mobility of the material. We will also review the material growth properties as well as the state-of-the-art results on high mobility metal-oxide semiconductor capacitors (MOSCAPs) using strained SiGe films. Then, we will introduce the flexible process that we have developed, based on a cost-effective “trench-protect-release-reuse” approach, utilizing the industry’s most used bulk Si (100) wafers, and discuss how it has been used for getting flexible and semi-transparent SiGe and Ge platforms. Finally, we examine the electrical characteristics of our materials through the fabrication of high-k/metal gate MOSCAPs with SiGe and Ge as channel material. We present their electrical performance on both non- flexible and flexible platform and discuss further improvement that has to be made in order to get better behaving devices for future MOSFET fabrication.

Thesis (Ph. D.)--Lehigh University, 1997. / Includes vita. Bibliography: leaves 266-279.

L'utilisation de dispositifs thermoélectriques à base de films minces en SiGe est envisagée dans de nombreuses applications comme la micro-génération de puissance ou le refroidissement localisé de composants microélectroniques. Le SiGe possède en effet un net avantage en terme d'integrabilite mais souffre cependant d'un déficit en terme de performances. Dans le cadre de cette thèse, nous nous sommes intéressés à la nanostructuration de ce matériau en super-réseau de boîtes quantiques (SRBQ), celle-ci devant permettre une forte augmentation de son facteur de mérite, rendue possible par une forte altération du transport thermique à l'échelle nanométrique. La réalisation, par un outil CVD de type industriel, à 750 °C, de SRBQ monocristallins lourdement dopés est présentée à partir d'analyses morphologiques (AFM), structurales (MEB, MET) et chimiques (SIMS). Des phénomènes de forts échanges Si-Ge pendant la croissance sont notamment mis en évidence et corrélés avec des mesures de conductivité thermique qui ne démontrent pas un effet significatif des boîtes sur le transport thermique. L'élaboration de structures polycristallines originales est également présentée. Enfin, la question cruciale de la détermination du facteur de mérite est abordée, notamment concernant les problèmes d'incertitudes de mesure. Une / Use of SiGe thin film thermoelectric devices is planed in many applications such as power microgeneration or local cooling of microelectronic components. One main advantage of SiGe relies on its ability to be monolithically integrated in ICs. However, SiGe is affected by a low coefficient of performance. Within the framework of this thesis, we focused on the nanostructuration of this material in the form of quantum dot superlattices (QDSL), which is expected to allow a strong increase of its figure-of-merit, by altering thermal transport at the nanometer scale. The growth of heavily doped monocrystalline QDSL in an industrial CVD tool at 750°C is presented from morphological (AFM), structural (SEM, TEM) and chemical (SIMS) analysis. Strong Si-Ge intermixing phenomenons are notably brought out and correlated with thermal conductivity measurements that do not demonstrate a significant effect of dots on thermal transport. The growth of original polycrystalline structures is also presented. Eventually, the crucial question of the figure-of-merit determination is addressed in particular with regard to the measurement uncertainty problem. One solution consisting in measuring simultaneously several electrical, thermal and thermoelectric parameters on a same sample is put forward and concretely implemented by the simultaneous fabrication of adapted test devices.

Recent advances in computational technology and algorithms have made it feasible to accurately model the electronic structures of solids by means of density functional theory. The development of hybrid functionals have improved the accuracy of band gap calculations and made it possible to make qualitative predictions regarding the charge transition energy levels of defects in semiconductors. The Sb-V defect (also known as the E-center) in germanium is a well-known defect, which have been the subject of many experimental and some theoretical studies. It has been found to have interesting annealing properties and the aim of this study is to investigate the electronic properties of the Sb-V defect theoretically. The vacancy defect in germanium (VGe), the antimony substitutional (SbGe) defect in germanium and the defect complex (Sb-V) arising from the combination of these two defects is explored in great detail and how they interact in proximity to one another is presented here. In addition, this work can be seen as a test for the effectiveness of the technique to model defects in semiconductors correctly. The E-center defect was investigated using the HSE06 hybrid functional as implemented in the VASP code. A positive binding energy of 1.5 eV, 1.02 eV and 0.88 eV was found for the first, second and third nearest neighbor configurations respectively, between the Sb and the vacancy was predicted. No metastability was detected and the nearest-neighbor configuration had the lowest energy for all charge states. Four transition levels in the band gap were predicted, with energy level relative to the valence band maximum, lying at 0.52 eV (-2/-1), 0.40 eV (-1/0), 0.44 eV (0/+1) and 0.02 eV (+1/+2). The two mid-gap levels (-1/0) and (0/+1) had negative-U ordering with U= -0.04 eV. iv These findings were consistent with the current experimental model of the Sb-V complex in germanium whereby no metastability has been observed experimentally. The energy level of the (-2/-1) corresponded well with the experimental DLTS level in n-type material at 0.37 eV, though the correspondence for the other levels was not as good. Experimentally, no negative-U behavior was observed, but the predicted negative-U behavior was rather small and no deliberate experiments have been performed to investigate the presence of negative-U behavior in the Sb-V complex. / Dissertation (MSc)--University of Pretoria, 2016. / National Research Foundation (NRF) / Physics / MSc / Unrestricted

Silicon photonics offers great benefits in terms of cost, performance and power consumption. This is increasingly important as the demand for internet bandwidth continues to grow. Optical detection in silicon photonics is performed via the integration of germanium, one of the more challenging integration steps during fabrication. This thesis describes research into a novel technique to grow silicon-germanium on silicon and its application in waveguide detectors and research performed into the application of germanium at extended wavelengths of light. Chapter 1 provides a brief introduction to silicon photonics and chapter 2 covers background material on p-n and p-i-n detectors as well as germanium growth on silicon and it’s applications in silicon photonics. Chapter 3 presents work done on a germanium condensation technique using high fluence ion implantation, suitable for straightforward silicon-germanium fabrication. Using this technique a crystalline layer of silicon-germanium with a high concentration of 92% germanium was demonstrated. In addition a semi-empirical model was developed using a segregation coefficient, an enhanced linear oxidation rate and transient enhanced diffusion. This technique was then used to fabricate a photodetector for operation at a wavelength of 1310 nm. While the responsivity of the detector of 0.01 A/W was modest, this work presents the first demonstration of a detector fabricated in this way, and as such provides a foundation for future improved devices. Chapter 4 presents work done on p-i-n germanium detectors to increase their detection limit in the thulium doped fibre amplifier band. This work originally focused on using mid-bandgap lattice defects introduce via ion implantation to improve the detection limit. However, during this experimental work it was determined that the unimplanted samples had a responsivity of 0.07 A/W at 1850 nm and 0.02 A/W at 2000 nm which was higher than that of the defect implanted samples and so the unimplanted samples were investigated further. From this work it was found that the absorption of the germanium detectors was 0.003 μm-1 at 1900 nm, which is approximately a factor of 10 greater than that of bulk germanium. The increased responsivity and absorption coefficient were attributed to tensile strain in the germanium. In Chapter 5 Raman spectroscopy was employed in order to investigate the detectors described in chapter 4 and confirm the presence of tensile strain. When compared with Raman spectra from a bulk germanium sample it was found that the detectors were experiencing 0.27 to 0.48 % tensile strain, consistent with the enhanced absorption at extended wavelengths. Nanowire bridges were then fabricated in germanium and silicon-germanium and characterized using Raman spectroscopy. Germanium was found to have enhanced strain in the nanowire with an enhancement of up to 13.5 demonstrated, whereas for the silicon-germanium samples the structures were shown to reduce the compressive strain in the samples. It is concluded that strain engineering is a very promising route for the development of extended wavelength detectors integrated with silicon photonic systems. / Thesis / Doctor of Philosophy (PhD)

No description available.

Im Rahmen der vorliegenden Arbeit wurde in Fortführung der Forschung unserer Arbeits-gruppe im Bereich der C/Si-Bioisosterie auf der Suche nach neuen Patchouli-Riechstoffen eine Reihe von neuartigen siliciumhaltigen Riechstoffen dargestellt. Als Vorbild für diese Strukturen diente eine ebenfalls dargestellte Überlagerungsstruktur von einem kürzlich ge-fundenen spirocyclischen Patchouli-Riechstoff und dem natürlichen Riechstoff (–)-Patchoulol. Darüber hinaus wurden von den beiden aus dieser Reihe besten Verbindungen auch die bis dato unbekannten Carba-Analoga synthetisiert. Die vorliegende Arbeit beschreibt außerdem die Synthese eines Germa-Analogons des Maiglöckchen-Riechstoffs Bourgeonal sowie die Versuche zur Synthese des Disila-Analogons eines bekannten holzigen Riechstoffs. Die ent-sprechenden Zielverbindungen sowie alle isolierten Zwischenstufen wurden durch NMR-Spektroskopie (1H, 13C, 29Si) und Elementaranalysen charakterisiert. In einigen Fällen erfolgte zusätzlich eine strukturelle Charakterisierung durch Einkristall-Röntgenstrukturanalyse. / This work describes the synthesis of novel silicon containing patchouli odorants that derive from a cis-decalol intersection structure of a recently found spirocyclic patchouli odorant, also reported within, and the natural compound responsible for the smell of patchouli,(–)-patchoulol. In addition, the hitherto unknown carbon analogues of the two best silicon containing patchouli odorants were prepared. Furthermore, a germa-analogue of the lily-of-the-valley odorant bourgeonal was synthesized. This thesis also deals with the synthesis of a disila-analogue of non-cyclic woody odorants. All the aforementioned target compounds and their intermediates were characterized by NMR studies (1H, 13C, 29Si), elemental analyses, and in some cases also by single-crystal X-ray diffraction.

by So Koon Chong. / Bibliography: leaves 86-88 / Thesis (M.Ph.)--Chinese University of Hong Kong, 1984

The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal at substrate temperatures of 250°C or 300°C, it may be possible to obtain isolated Ge nanowires. The Ge nanowires are crystalline as shown by Raman Spectroscopy. / Singapore-MIT Alliance (SMA)

Thesis (Ph. D.)--University of Washington, 2006. / Vita. Includes bibliographical references (p. 170-176).