Thesis (M.S. in E.E.)--School of Electrical and Computer Engineering, Georgia Institute of Technology, 2004. Directed by David V. Anderson. / Includes bibliographical references (leaves 55-56).

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The experimental work undertook in this thesis looks to integrate technologies developed by the graphene and plasmonics communities, respectively, for the purpose of producing devices of enhanced qualities to those of similar utility that have previously been produced. Furthermore, where possible, we look to offer disruptive innovation, by utilising coupled properties that may offer unique possibilities for applications. A hybrid graphene-plasmonic waveguide modulator is fabricated and shown to operate successfully at a standard telecommunications frequency. Different plasmonic-waveguide designs — the basis for the modulator — were produced to probe the coupling between graphene and the surface plasmon-polariton modes. A mode excitable at the edge of the waveguide was found to offer the best modulation, with a modulation depth of over 0.03 dB μm^−1, induced by a moderate gating voltage of about 10 V. Topologically-protected darkness (zero reflection) was produced by particular engineering of a plasmonic metamaterial. This allowed generation of a singularity in the ellipsometric phase (a particular parameter of light), allowing for measurements of mass sensitivity of ∼10 fg mm^−2, with the possibility of improving this to ∼100 ag mm^−2. Graphene was employed in a novel metrology tool to measure the sensitivity of this device. With respect to fundamental losses in plasmonics, one could find either a new plasmonic material or look to improve an existing one. Work was undertook with respect to this latter option by attempting to preserve the otherwise excellent plasmonic properties of copper and silver through a protective barrier of graphene. This was achieved and illustrated through ellipsometric measurements taken over various timescales. Fabrication of a dielectric loaded waveguide on graphene-protected copper was then carried out, with operation of the waveguide proving successful, possibly opening the field of active graphene-protected metal plasmonics.

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Barbituric acids have been historically classified as compounds that act on the central nervous system, and as such provide therapeutic uses as anxiolytics, sedatives, hypnotics, and anticonvulsants. Recent investigations of barbituric acid derivatives have provided scientists with information that barbituric acids may have applications in antibacterial, anti-chlamydial, anti-viral, as well as anti-cancer treatments. Additionally, recent literature accounts have indicated that barbituric acid derivatives may also act as immune modulators. The recent explorations of barbiturates and their potential anti-cancer and immune modulating properties are the subject of this work. Novel synthetic approaches to the development of new barbituric acid derivatives were explored thoroughly, and the mechanisms of these novel syntheses were detailed by experiment and spectroscopic characterizations. In many cases the reaction procedures were designed for large scale, efficient syntheses, that are directly applicable to pharmaceutical production of these potentially valuable therapeutic compounds. Several new products unique to barbituric acid reactions were characterized spectroscopically. Barbituric acid derivatives were the subject of biological evaluation, and the results are reported in this work. Overall, unique synthetic approaches to the production of novel barbituric acid derivatives were accomplished to create several new classes of barbiturates with potential applications in cancer treatment.

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Zhao, Yinsheng. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2011. / Includes bibliographical references (leaves 90-93). / Abstracts in English and Chinese. / ABSTRACT --- p.I / 摘要 --- p.II / CONTENTS --- p.III / LIST OF FIGURES --- p.V / LIST OF TABLES --- p.VII / ACKNOWLEDGEMENT --- p.VIII / Chapter CHAPTER 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- MOTIVATION --- p.1 / Chapter 1.2 --- ORGANIZATION OF THE THESIS --- p.5 / Chapter CHAPTER 2 --- BASIC THEOREMS OF DELTA SIGMA ADC --- p.6 / Chapter 2.1 --- INTRODUCTION TO SAMPLING TECHNIQUE --- p.6 / Chapter 2.2 --- DELTA-SIGMA ORDER & NOISE-SHAPING ORDER --- p.8 / Chapter 2.2.1 --- FIRST ORDER CLELTA-SIGMA MODULATOR --- p.8 / Chapter 2.2.2 --- HIGH ORDER DELTA-SIGMA MODULATOR --- p.11 / Chapter 2.3 --- CHOPPER-STABILIZATION TECHNIQUE --- p.13 / Chapter 2.4 --- MIRRORED INTEGRATOR --- p.16 / Chapter 2.5 --- PERFORMANCE METRICS --- p.18 / Chapter 2.5.1 --- SIGNAL TO NOISE RATIO (SNR) --- p.18 / Chapter 2.5.2 --- SIGNAL TO NOISE AND DISTORTION RATIO (SNDR) --- p.19 / Chapter 2.5.3 --- DYNAM IC RANGE --- p.19 / Chapter 2.5.4 --- EFFECTIVE NUMBER OF BITS --- p.19 / Chapter 2.5.5 --- "OVERLOAD LEVER, XOL" --- p.19 / Chapter 2.6 --- CONCLUSION --- p.20 / Chapter CHAPTER 3 --- NON-IDEALITIES IN SYSTEM MODELING --- p.21 / Chapter 3.1 --- CLOCK JITTER --- p.21 / Chapter 3.2 --- NON-IDEAL EFFECT OF OPERATIONAL AMPLIFIER --- p.23 / Chapter 3.2.1 --- FINITE OPEN-LOOP GAIN --- p.23 / Chapter 3.2.2 --- FINITE BANDWIDTH AND SLEW-RATE --- p.24 / Chapter 3.3 --- CAPACITOR RATIO ERROR --- p.26 / Chapter 3.4 --- THERMAL NOISE --- p.27 / Chapter 3.5 --- SWITCH CHARGE INJECTION ERROR --- p.30 / Chapter 3.6 --- CONCLUSION --- p.34 / Chapter CHAPTER 4 --- A CHOPPER-STABILIZED HIGH-PASS DELTA-SIGMA MODULATOR IN 1.8V 0.18MM CMOS --- p.35 / Chapter 4.1 --- STRUCTURE SELECTION --- p.35 / Chapter 4.2 --- SYSTEM MODELING AND PARAMETER SELECTION --- p.38 / Chapter 4.3 --- CIRCUIT IMPLEMENTATION --- p.42 / Chapter 4.3.1 --- OPERATIONAL AMPLIFIER --- p.42 / Chapter 4.3.2 --- QUANTIZER --- p.44 / Chapter 4.3.3 --- FREQUENCY DIVIDER --- p.47 / Chapter 4.3.4 --- OVERALL CIRCUIT --- p.48 / Chapter 4.4 --- LAYOUT IMPLEMENTATION --- p.50 / Chapter 4.4.1 --- LAYOUT SYMMETRIC TECHNIQUE --- p.50 / Chapter 4.4.2 --- CIRCUIT LAYOUT --- p.53 / Chapter 4.4.3 --- FLOOR PLANNING AND TOP LEVEL INTER-CONNECT!ON --- p.56 / Chapter 4.5 --- MEASUREMENT RESULTS --- p.58 / Chapter CHAPTER 5 --- A LOW-POWER CHOPPER-STABILIZED DELTA-SIGMA MODULATOR IN 1.2V0.18MM CMOS --- p.63 / Chapter 5.1 --- STRUCTURE SELECTION --- p.63 / Chapter 5.2 --- SYSTEM MODELING AND PARAMETER SELECTION --- p.67 / Chapter 5.3 --- CIRCUIT IMPLEMENTATION --- p.70 / Chapter 5.3.1 --- OPERATIONAL AMPLIFIER --- p.70 / Chapter 5.3.2 --- QUANTIZER --- p.73 / Chapter 5.3.3 --- LARGE DELAY GENERATION --- p.73 / Chapter 5.3.4 --- OVERALL CIRCUIT --- p.75 / Chapter 5.4 --- SIMULATION RESULTS --- p.77 / Chapter CHAPTER 6 --- DECIMATION FILTER DESIGN --- p.79 / Chapter 6.1. --- THE WHOLE VIEW OF DECIMATION FILTER --- p.79 / Chapter 6.2. --- THE DECIMATION FILTER IN SIMULINK --- p.80 / Chapter 6.2.1 --- SINE FILTER DESIGN --- p.80 / Chapter 6.2.2 --- HALF-BAND FILTER DESIGN --- p.82 / Chapter CHAPTER 7 --- CONCLUSIONS AND FUTURE WORKS --- p.88 / Chapter 7.1. --- CONCLUSIONS --- p.88 / Chapter 7.2. --- FUTURE WORKS --- p.89 / REFERENCES --- p.90 / PUBLICATION --- p.93