Made available in DSpace on 2014-10-09T12:49:02Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:09:52Z (GMT). No. of bitstreams: 1 09668.pdf: 6341914 bytes, checksum: 8514c212809df88b758a80f7ad2d2fd8 (MD5) / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN/CNEN-SP

Submitted by Claudinei Pracidelli (cpracide@ipen.br) on 2014-11-10T10:35:23Z No. of bitstreams: 0 / Made available in DSpace on 2014-11-10T10:35:23Z (GMT). No. of bitstreams: 0 / O Programa de Controle de Qualidade de sistemas geradores de raios X inclui a verificação periódica da constância dos feixes de raios X, para tanto é preciso que o físico especialista conheça as respostas dos instrumentos medidores de radiação. Neste trabalho foi analisado o comportamento das câmaras de ionização submetidas a feixes de radiação em Radiodiagnóstico nas energias de 50, 81, 90 e 102 kV. Inicialmente foram realizadas medidas experimentais com oito câmaras de ionização de quatro modelos- e, em seguida, foi simulado através do Método de Monte Carlo, com o código MCNP5, um sistema gerador de raios X e os quatro modelos de câmaras de ionização empregados na parte experimental. Com as simulações de arranjo padronizado foi calculado o valor de kerma no ar e foram comparadas, então, as respostas obtidas experimentalmente com os cálculos por simulação. As correlações obtidas entre os resultados permitiram o desenvolvimento de uma ferramenta que apresenta maiores informações para a compreensão dos equipamentos detectores utilizados, e que auxilia o especialista em física médica na análise da resposta dos detectores. / Dissertação (Mestrado em Tecnologia Nuclear) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Submitted by Claudinei Pracidelli (cpracide@ipen.br) on 2016-02-03T12:00:17Z No. of bitstreams: 0 / Made available in DSpace on 2016-02-03T12:00:17Z (GMT). No. of bitstreams: 0 / Os compostos semicondutores com alto número atômico e energia de banda proibida larga vêm sendo pesquisados como detectores de radiação X e gama, com alta resolução energética, operando à temperatura ambiente. O denominador comum dos materiais semicondutores, que operam à temperatura ambiente, é a dificuldade em crescer cristais com pureza química elevada e boa estequiometria. O desenvolvimento deste tipo de detectores semicondutores de radiação é ainda um desafio tecnológico e tem deparado com muitos fatores limitantes, tais como: material de partida com qualidade compatível para o uso no crescimento de cristal, baixa estabilidade do detector ao longo do tempo, oxidação superficial e outras dificuldades relatadas na literatura, que limitam o seu uso. Neste trabalho, estabeleceu-se a metodologia de transporte físico de vapor (PVT) para a purificação e crescimento do cristal semicondutor de Iodeto de Mercúrio (HgI2). Cristais de HgI2 com orientação cristalina, estequiometria e morfologia da superfície adequadas foram obtidos por essa técnica. Uma redução nítida de impurezas após a purificação pode ser observada e o nível de impureza presente nos cristais não interferiu nas suas estruturas cristalinas. Uma boa morfologia com uniformidade nas camadas da superfície foi encontrada nos cristais, indicando uma boa orientação na estrutura cristalina. Um estudo inédito foi realizado no Laboratório da University of Freiburg, sob a coordenação do Prof. Michael Fiederle, com o intuito de aumentar a estabilidade do detector de HgI2 ao longo do tempo. A aplicação de diferentes tipos de resina polimérica para encapsulamento dos detectores HgI2 foi realizada e estudada, no intuito de proteger o cristal de HgI2 das reações com os gases atmosféricos e isolar eletricamente a superfície dos cristais. Quatro resinas poliméricas foram analisadas, cujas composições são: Resina n 1: 50% - 100% de heptano, 10% - 25% metilcicloexano, <1% de ciclo-hexano; Resina n2: 25% - 50% de etanol, 25% - 50% de acetona, <2,5% de acetato de etilo; Resina n3: 50% - 100% de acetato de metilo, 5% - 10% de n-butilo e Resina 4: 50% - 100% de etil-2- cianoacrilato. A influência dos tipos de resina polimérica utilizada na espectroscopia de desempenho do detector semicondutor HgI2 é, claramente, demonstrada. O melhor resultado foi encontrado para o detector encapsulado com resina n3. Um aumento de até 26 vezes no tempo de estabilidade, como detector de radiação, foi observado para os detectores encapsulados com resina em comparação com o detector não encapsulado, exposto à atmosfera. / Tese (Doutorado em Tecnologia Nuclear) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

The main focus of this thesis is the characterization of the charge transport in CdZnTe radiation detectors and the study of the effect of the detector illumination on charge transport. The transport properties are evaluated using Laser-induced Transient Current Technique and the Monte Carlo simulation is used for fitting the measured current waveforms. The properties of the detector prepared from semi-insulating CdZnTe single crystal with a platinum Schottky contacts were measured in the dark in the unpolarized and polarized state and under the anode and cathode continuous LED above-bandgap illumination.

Isotopenangereicherte hochreine Germanium (HPGe) Strahlungsdetektorkristalle mit herausragender chemischen Reinheit und kristalliner Perfektion spielen eine Schlüsselrolle zur Beantwortung fundamentaler Fragen bezüglich Neutrinos und Dunkler Materie. Diese Dissertation untersucht die einhergehende Materialaufbereitung von Germanium angereichert an 76Ge, Kristallzüchtung, sowie die notwendige Charakterisierung und Beschreibung von Defekten. In dieser Arbeit wird ein Wasserstoff-Reduktionsprozess eingesetzt um 50 kg an angereicherten GeO2 zu halbleitenden Ge zu reduzieren, was anschließend mittels Zonenreinigung auf intrinsische Reinheit gebracht wurde. Die Prozesse wurden hinsichtlich einer minimalen Exposition durch kosmische Strahlung und einer maximaler Ausbeute optimiert. Zudem wurde eine Zonenreinigungstechnologie für HPGe in Quarzglasbooten zur Erreichung der angestrebten Netto-Ladungsträgerdichte von 10^10 cm^-3 entwickelt. [0 0 1] HPGe Einkristalle mit niedriger Defektdichte wurden mittels des Czochralski-Verfahrens gezüchtet. Ein dynamischer Beugungseffekt zeigte die Existenz von Leerstellencluster in versetzungsfreien Ge mit einem Durchmesser von 100 nm und einer Dichte von 10^5 cm^-3 auf, was mit einem Abfall der Ladungsträgerlebensdauer von über 400 auf 83 µs verbunden war. Des Weiteren wurde Versetzungslinien und –typ Selektion in [2 1 1] und [1 1 0] Ge Kristallen durch Weißstrahltopografie und einer damit einhergehenden umfangreichen Burgersvektor-Analyse nachgewiesen. Die hohen Lebensdauern weisen auf eine verbesserte zukünftige Detektorkristalltechnologie hin. Letztendlich wurde die aus der Kristallzüchtung resultierende Versetzungsmultiplikation durch Diskrete Versetzungsdynamik unter Verwendung und Modifizierung des Open-Source Codes ParaDiS beschrieben. Exponentielle Versetzungsmultiplikation wurde beobachtet, mit einer linearen Proportionalität der mittleren Versetzungsgeschwindigkeit und des Multiplikationsparameters zur effektiven Schubspannung. / Isotopically enriched high-purity germanium (HPGe) radiation detector crystals with outstanding crystalline perfection play a key role in answering fundamental questions concerning neutrinos and dark matter. This thesis investigates the related material processing of germanium isotopically enriched in 76Ge, crystal growth, and the necessary defect characterization and description. In this work, a hydrogen reduction process was employed to reduce around 50 kg of enriched GeO2 to semiconducting Ge, which was subsequently purified by zone-refining to intrinsic purity. The processes were optimized towards a minimal exposure to cosmic radiation and a maximal yield. Furthermore, HPGe zone-refining technology in fused silica boats has been developed to reach the target net charge carrier density of 10^10 cm^-3. [0 0 1] HPGe single crystals with low defect density were grown by the Czochralski method. A dynamical X-ray diffraction effect revealed the presence of voids in dislocation-free Ge with a diameter of 100 nm and a density of 10^5 cm^-3, which was accompanied by a decrease in charge carrier lifetime from above 400 to 83 µs. Additionally, dislocation line and type selection were demonstrated in [2 1 1] and [1 1 0] Ge crystals by white beam X-ray topography accompanied by an extensive Burgers vector analysis. The high lifetimes suggest an improved future detector crystal technology. Finally, the dislocation multiplication during crystal growth could be described by discrete dislocation dynamics, utilizing and modifying the open-source code ParaDiS. Exponential dislocation multiplication was observed with an average dislocation velocity and multiplication parameter linearly proportional to the effective shear stress.

The development of Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represents nowadays a hot-topic in the radiation detector community. The advantages in terms of production costs and easiness of manufacturing in comparison to the state-of-the-art hybrid detectors boost the research effort in the direction of developing new CMOS compatible detector technologies. To this end, the INFN ARCADIA project targeted the design of a sensor platform for the production of FD-MAPS to be employed in different scientific, medical and space applications. The sensor technology has been developed in collaboration with LFoundry on the basis of a standard 110nm CMOS production process with some modifications needed to meet the project requirements. High resistivity n-type silicon substrates have been chosen for the sensor active volume and a n-type epitaxial layer has been included at the sensor frontside to delay the onset of the punch-through current flowing between the frontside and backside p-type implants. The sensor n-type collection electrodes are surrounded by pwells, which can host the embedded analog and digital frontend electronics, and deep pwells have been included below the pwells to shield them from the sensor substrate. Three engineering runs have been submitted and the produced wafers have been delivered in 2021, 2022 and 2023, respectively. An additional p-type implant has been added in the third production run to create an embedded gain layer below the n-type collection electrodes, to enhance the signal through avalanche multiplication. A selection of the main results obtained from the TCAD simulations and of the most relevant measurements performed on the designed MAPS passive test structures will be presented and discussed in chapter 4. In an analogous way, the experimental results obtained from the characterization of an active sensor designed for brachytherapy, called COBRA, are reported in chapter 5. The calibration of the capacitance included in the internal charge injection circuit of two TJ-Monopix2 MAPS having different substrate types is reported in chapter 6. These sensors represent examples of fully functional and full scale monolithic prototypes realized in a 180nm Tower-Jazz CMOS process, that have been characterized using X-rays fluorescence techniques at the SiLab of the University of Bonn. Finally, in the Conclusions section the main results of the research activity are summarized and the possible future spin-offs of the project are presented.

We describe a stochastic network interdiction problem in which an interdictor, subject to limited resources, installs radiation detectors at border checkpoints in a transportation network in order to minimize the probability that a smuggler of nuclear material can traverse the residual network undetected. The problems are stochastic because the smuggler's origin-destination pair, the mass and type of material being smuggled, and the level of shielding are known only through a probability distribution when the detectors are installed. We consider three variants of the problem. The first is a Stackelberg game which assumes that the smuggler chooses a maximum-reliability path through the network with full knowledge of detector locations. The second is a Cournot game in which the interdictor and the smuggler act simultaneously. The third is a "hybrid" game in which only a subset of detector locations is revealed to the smuggler. In the Stackelberg setting, the problem is NP-complete even if the interdictor can only install detectors at border checkpoints of a single country. However, we can compute wait-and-see bounds in polynomial time if the interdictor can only install detectors at border checkpoints of the origin and destination countries. We describe mixed-integer programming formulations and customized branch-and-bound algorithms which exploit this fact, and provide computational results which show that these specialized approaches are substantially faster than more straightforward integer-programming implementations. We also present some special properties of the single-country case and a complexity landscape for this family of problems. The Cournot variant of the problem is potentially challenging as the interdictor must place a probability distribution over an exponentially-sized set of feasible detector deployments. We use the equivalence of optimization and separation to show that the problem is polynomially solvable in the single-country case if the detectors have unit installation costs. We present a row-generation algorithm and a version of the weighted majority algorithm to solve such instances. We use an exact-penalty result to formulate a model in which some detectors are visible to the smuggler and others are not. This may be appropriate to model "decoy" detectors and detector upgrades. / text

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Com o objetivo de monitorar o crescente número de trabalhadores potencialmente expostos à radiação de nêutrons, foi projetado e desenvolvido um dosímetro individual para campos mistos nêutron-gama. O dosímetro proposto foi caracterizado para o espectro de energia de uma fonte de Amerício-Berílio e para o intervalo de dose de interesse da proteção radiológica (até 20 mSv). Para tanto utilizou-se a dosimetria termoluminescente de albedo e a dosimetria de traços nucleares, técnicas consagradas na literatura internacional, empregando materiais de fabricação nacional e de baixo custo. Um policarbonato comercial, denominado SS-1, foi caracterizado para aplicação como detector sólido de traços nucleares. Os parâmetros para revelação química e ampliação dos traços, assim como a metodologia de avaliação dos detectores foram determinados. Estudou-se a resposta dos detectores TLD-600, TLD-700 e SS-1 em campos mistos nêutrongama de uma fonte de Amerício-Berílio e definiu-se um algoritmo para cálculo da dose de nêutrons e de radiação gama. A razão entre as respostas para nêutrons térmicos, de albedo e rápidos permite analisar o espectro ao qual o dosímetro foi submetido e corrigir a resposta do detector de traços para variações no ângulo de incidência da radiação. O novo dosímetro está pronto e apresenta desempenho para ser usado como dosímetro de nêutrons no Brasil. / An individual dosimeter for neutron-gamma mixed field dosimetry was design and developed aiming monitoring the increasing number of workers potentially exposed to neutrons. The proposed dosimeter was characterized to an Americium-Beryllium source spectrum and dose range of radiation protection interest (up to 20 mSv). Thermoluminescent albedo dosimetry and nuclear tracks dosimetry, traditional techniques found in the international literature, with materials of low cost and national production, were used. A commercial polycarbonate, named SS-1, was characterized for solid state tack detector application. The chemical etching parameters and the methodology of detectors evaluation were determined. The response of TLD-600, TLD-700 and SS-1 were studied and algorithms for dose calculation of neutron and gamma radiation of Americium- Beryllium sources were proposed. The ratio between thermal, albedo and fast neutrons responses, allows analyzing the spectrum to which the dosimeter was submitted and correcting the track detector response to variations in the radiation incidence angle. The new dosimeter is fully characterized, having sufficient performance to be applied as neutron dosimeter in Brazil.